BFR93AW,135 [NXP]
BFR93AW - NPN 5 GHz wideband transistor SC-70 3-Pin;型号: | BFR93AW,135 |
厂家: | NXP |
描述: | BFR93AW - NPN 5 GHz wideband transistor SC-70 3-Pin |
文件: | 总14页 (文件大小:110K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFR93AW
NPN 5 GHz wideband transistor
Product specification
1995 Sep 18
Supersedes data of November 1992
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
FEATURES
DESCRIPTION
3
High power gain
Silicon NPN transistor encapsulated
in a plastic SOT323 (S-mini) package.
The BFR93AW uses the same crystal
as the SOT23 version, BFR93A.
Gold metallization ensures
excellent reliability
SOT323 (S-mini) package.
PINNING
1
2
APPLICATIONS
PIN
DESCRIPTION
MBC870
It is designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
Top view
Marking code: R2.
1
2
3
base
emitter
Fig.1 SOT323
collector
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
15
UNIT
VCBO
VCEO
IC
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
open emitter
open base
V
12
35
300
V
mA
mW
Ptot
hFE
Cre
up to Ts = 93 C; note 1
IC = 30 mA; VCE = 5 V
40
90
feedback capacitance
IC = 0; VCE = 5 V; f = 1 MHz;
0.6
pF
Tamb = 25 C
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 500 MHz
4
5
GHz
dB
GUM
maximum unilateral power IC = 30 mA; VCE = 8 V; f = 1 GHz;
13
gain
Tamb = 25 C
IC = 30 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 C
8
dB
dB
C
F
noise figure
IC = 5 mA; VCE = 8 V; f = 1 GHz;
s = opt
1.5
Tj
junction temperature
150
Note
1. Ts is the temperature at the soldering point of the collector pin.
1995 Sep 18
2
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITION
MIN. MAX. UNIT
VCBO
VCEO
VEBO
IC
open emitter
open base
15
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
12
V
open collector
2
V
35
mA
mW
C
C
Ptot
up to Ts = 93 C; see Fig.2; note 1
300
+150
150
Tstg
Tj
65
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITION
VALUE
190
UNIT
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 93 C; note 1
K/W
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
MLB540
400
P
tot
(mW)
300
200
100
0
0
50
100
150
200
o
( C)
T
s
Fig.2 Power derating curve.
1995 Sep 18
3
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
CHARACTERISTICS
Tj = 25 C (unless otherwise specified).
SYMBOL
ICBO
hFE
PARAMETER
collector leakage current
DC current gain
CONDITIONS
IE = 0; VCB = 5 V
MIN.
TYP.
MAX.
50
UNIT
nA
IC = 30 mA; VCE = 5 V
40
90
Cc
collector capacitance
emitter capacitance
IE = ie = 0; VCB = 5 V; f = 1 MHz
0.7
2.3
pF
pF
Ce
IC = ic = 0; VEB = 0.5 V;
f = 1 MHz
Cre
fT
feedback capacitance
transition frequency
IC = 0; VCE = 5 V; f = 1 MHz
0.6
5
pF
IC = 30 mA; VCE = 5 V;
f = 500 MHz
4
GHz
GUM
maximum unilateral power
gain; note 1
IC = 30 mA; VCE = 8 V;
f = 1 GHz; Tamb = 25 C
13
8
dB
dB
dB
dB
IC = 30 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 C
F
noise figure
IC = 5 mA; VCE = 8 V;
f = 1 GHz; s = opt
1.5
2.1
IC = 5 mA; VCE = 8 V;
f = 2 GHz; s = opt
Note
2
s21
--------------------------------------------------------
dB.
1.
G
UM is the maximum unilateral power gain, assuming s12 is zero and GUM = 10 log
1 – s11 21 – s22 2
1995 Sep 18
4
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
MBG203
MCD087
1
120
handbook, halfpage
C
re
(pF)
h
FE
0.8
0.6
80
40
0
0.4
0.2
0
0
4
8
12
16
0
10
20
30
V
(V)
I
(mA)
CB
C
IC = 0; f = 1 MHz.
VCE = 5 V.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
MBG204
6
f
T
(GHz)
4
2
0
2
1
10
10
I
(mA)
C
VCE = 5 V; f = 500 MHz; Tamb = 25 C.
Fig.5 Transition frequency as a function
of collector current; typical values.
1995 Sep 18
5
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
MBG202
MBG201
30
30
gain
(dB)
gain
(dB)
MSG
20
20
G
UM
MSG
G
UM
10
10
0
0
0
10
20
30
0
10
20
30
I
(mA)
I
(mA)
C
C
VCE = 8 V; f = 500 MHz.
VCE = 8 V; f = 1 GHz.
Fig.6 Gain as a function of collector current;
typical values.
Fig.7 Gain as a function of collector current;
typical values.
MBG200
MBG207
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
G
G
UM
UM
40
30
20
10
0
40
30
20
10
0
MSG
MSG
G
G
max
max
2
3
4
2
3
4
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
VCE = 8 V; IC = 10 mA.
VCE = 8 V; IC = 30 mA.
Fig.8 Gain as a function of frequency;
typical values.
Fig.9 Gain as a function of frequency;
typical values.
1995 Sep 18
6
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
MGC901
MGC900
6
6
handbook, halfpage
handbook, halfpage
F
F
(dB)
(dB)
4
4
2
0
f = 2 GHz
I
= 30 mA
C
1 GHz
10 mA
5 mA
500 MHz
2
0
2
2
3
4
1
10
10
10
10
10
I
(mA)
f (MHz)
C
VCE = 8 V.
VCE = 8 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Minimum noise figure as a function of
collector current; typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
F
1
= 1.4 dB
min
Γ
opt
2
0.2
0.5
5
o
o
180
0
0
F = 2 dB
5
0.2
F = 3 dB
F = 4 dB
0.5
2
o
o
45
135
1
MGC879
1.0
o
90
f = 500 MHz; VCE = 8 V; IC = 10 mA; Zo = 50
Fig.12 Common emitter noise figure circles; typical values.
7
1995 Sep 18
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
o
90
1.0
0.8
0.6
0.4
0.2
0
1
o
o
135
45
2
0.5
0.2
5
G
= 13.8 dB
F
= 2 dB
max
min
Γ
Γ
ms
opt
0.2
0.5
1
2
5
o
o
180
0
0
G = 13 dB
F = 2.5 dB
F = 3 dB
G = 12 dB
5
0.2
G = 11 dB
F = 4 dB
0.5
2
o
o
45
135
1
MGC880
1.0
o
90
f = 1 GHz; VCE = 8 V; IC = 10 mA; Zo = 50
Fig.13 Common emitter noise figure circles; typical values.
o
90
1.0
0.8
0.6
0.4
0.2
0
1
o
o
135
0.2
45
2
0.5
(4)
5
(3)
(2)
0.2
0.5
1
2
5
o
o
180
0
0
(5) (1)
5
0.2
(6)
(7)
(1)
opt; Fmin = 3 dB.
(2) F = 3.5 dB.
(3) F = 4 dB.
(4) F = 5 dB.
(8)
0.5
2
o
o
45
135
(5)
ms; Gmax = 8.1 dB.
1
(6) G = 7 dB.
(7) G = 6 dB.
(8) G = 5 dB.
MGC881
1.0
o
90
f = 2 GHz; VCE = 8 V; IC = 10 mA; Zo = 50
Fig.14 Common emitter noise figure circles; typical values.
8
1995 Sep 18
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
o
90
1.0
0.8
0.6
0.4
0.2
0
1
o
o
135
45
2
0.5
0.2
5
3 GHz
0.2
0.5
1
2
5
o
o
180
0
0
40 MHz
5
0.2
0.5
2
o
o
45
135
1
MGC878
1.0
o
90
VCE = 8 V; IC = 30 mA; Zo = 50 .
Fig.15 Common emitter input reflection coefficient (s11); typical values.
o
90
o
o
135
45
3 GHz
40 MHz
20 10
o
o
180
0
50
40
30
o
o
135
45
o
MGC898
90
VCE = 8 V; IC = 30 mA.
Fig.16 Common emitter forward transmission coefficient (s21); typical values.
9
1995 Sep 18
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
o
90
o
o
135
45
3 GHz
40 MHz
o
o
180
0
0.5
0.4
0.3
0.2
0.1
o
o
135
45
o
MGC899
90
VCE = 8 V; IC = 30 mA.
Fig.17 Common emitter reverse transmission coefficient (s12); typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
0.2
0.5
1
2
5
o
o
180
0
0
40 MHz
5
3 GHz
0.2
0.5
2
o
o
45
135
1
MGC877
1.0
o
90
VCE = 8 V; IC = 30 mA; Zo = 50 .
Fig.18 Common emitter output reflection coefficient (s22); typical values.
10
1995 Sep 18
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v M
A
E
3
Q
A
A
1
c
1
2
L
p
e
b
w
M B
1
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-04
06-03-16
SOT323
SC-70
1995 Sep 18
11
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
Suitability for use NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
1995 Sep 18
12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
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Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Semiconductors’ product specifications.
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
1995 Sep 18
13
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/02/pp14
Date of release: 1995 Sep 18
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