BFS540_00 [NXP]
NPN 9 GHz wideband transistor; NPN 9 GHz宽带晶体管
| 型号： | BFS540_00 |
| 厂家： | 
NXP |
| 描述： | NPN 9 GHz wideband transistor |
| 文件： | 总12页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BFS540
NPN 9 GHz wideband transistor
Product specification
2000 May 30
Supersedes data of 1997 Dec 05
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
FEATURES
DESCRIPTION
• High power gain
NPN transistor in a SOT323 plastic
package.
• Low noise figure
3
• High transition frequency
PINNING
• Gold metallization ensures
excellent reliability
PIN
DESCRIPTION
• SOT323 package.
1
2
1
2
3
base
MBC870
Top view
emitter
APPLICATIONS
collector
RF wideband amplifier applications
such as satellite TV systems and RF
portable communication equipment
with signal frequencies up to 2 GHz.
Marking code: N4.
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
VCEO
IC
open emitter
open base
−
−
−
−
−
−
−
−
20
V
15
V
120
500
250
−
mA
mW
Ptot
hFE
fT
Ts ≤ 80 °C; note 1
IC = 40 mA; VCE = 8 V; Tj = 25 °C
100 120
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
−
−
−
9
GHz
dB
GUM
F
maximum unilateral power gain
noise figure
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
14
1.3
−
IC = 10 mA; VCE = 8 V; f = 900 MHz;
1.7
dB
Tamb = 25 °C
Note
1. Ts is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
VCBO
VCES
VEBO
IC
open emitter
RBE = 0
−
20
V
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
−
15
V
open collector
−
2.5
V
−
120
500
150
175
mA
mW
°C
°C
Ptot
Tstg
Tj
Ts ≤ 80 °C; note 1
−
−65
−
Note
1. Ts is the temperature at the soldering point of the collector tab.
2000 May 30
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point Ts ≤ 80 °C; note 1
190
K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCE = 8 V
MIN. TYP. MAX. UNIT
ICBO
hFE
Ce
collector cut-off current
DC current gain
−
−
50
250
−
nA
IC = 40 mA; VCE = 8 V
100
−
120
2
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = 0; VCB = 8 V; f = 1 MHz
pF
Cc
−
0.9
0.6
9
−
pF
Cre
fT
−
−
pF
IC = 40 mA; VCE = 8 V; f = 1 GHz;
−
−
GHz
Tamb = 25 °C
GUM
maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz;
−
14
8
−
dB
(note 1)
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 2 GHz;
−
−
dB
Tamb = 25 °C
2
insertion power gain
noise figure
IC = 40 mA; VCE = 8 V; f = 900 MHz;
12
−
13
1.3
1.9
2.1
21
34
−
dB
|s21
|
Tamb = 25 °C
F
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
1.8
2.4
−
dB
Γs = Γopt; IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
−
dB
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
−
dB
PL1
output power at 1 dB gain
compression
Ic = 40 mA; VCE = 8 V; RL = 50 Ω;
f = 900 MHz; Tamb = 25 °C
−
−
dBm
dBm
ITO
third order intercept point
note 2
−
−
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero and
2
s21
--------------------------------------------------------
GUM = 10 log
dB.
(1 – s11 2)(1 – s22
)
2
2. IC = 40 mA; VCE = 8 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 898 MHz and at f(2q−p) = 904 MHz.
2000 May 30
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
MRC008 - 1
MRC010
400
200
handbook, halfpage
handbook, halfpage
P
tot
h
FE
(mW)
300
150
200
100
0
100
50
0
0
50
100
150
200
−2
−1
2
10
10
1
10
10
o
T ( C)
s
I
(mA)
C
VCE = 8 V; Tj = 25 °C.
VCE ≤ 10 V.
Fig.3 DC current gain as a function of collector
current.
Fig.2 Power derating curve.
MRC001
MRC002
1
12
handbook, halfpage
handbook, halfpage
C
re
(pF)
f
T
(GHz)
0.8
0.6
0.4
0.2
0
V
= 8 V
4 V
CE
8
4
0
2
0
2
4
6
8
10
V
12
(V)
1
10
10
I
(mA)
C
CB
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 °C.
Fig.4 Feedback capacitance as a function of
collector-base voltage.
Fig.5 Transition frequency as a function of
collector current.
2000 May 30
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
MRC007
MRC006
20
15
handbook, halfpage
handbook, halfpage
G
UM
gain
(dB)
(dB)
16
12
8
V
= 8 V
4 V
CE
10
G
max
G
UM
5
4
0
0
0
0
10
20
30
40
I
50
(mA)
20
40
60
I
(mA)
C
C
f = 900 MHz; Tamb = 25 °C.
VCE = 8 V; f = 2 GHz; Tamb = 25 °C.
Fig.6 Maximum unilateral power gain as a
function of collector current.
Fig.7 Gain as a function of collector current.
MRC004
MRC005
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
40
40
G
UM
G
UM
30
20
10
0
30
20
10
0
MSG
MSG
G
max
G
max
−2
−1
−2
−1
10
10
1
10
10
10
1
10
f (GHz)
f (GHz)
IC = 10 mA; VCE = 8 V; Tamb = 25 °C.
IC = 40 mA; VCE = 8 V; Tamb = 25 °C.
Fig.8 Gain as a function of frequency.
Fig.9 Gain as a function of frequency.
2000 May 30
5
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
MRC009
MRC003
4
4
handbook, halfpage
handbook, halfpage
F
F
I
=
(dB)
C
(dB)
40 mA
3
3
2
1
0
10 mA
f =
2 GHz
2
900 MHz
1
0
500 MHz
2
−1
1
10
10
10
1
10
f (GHz)
I
(mA)
C
VCE = 8 V; Tamb = 25 °C.
VCE = 8 V; Tamb = 25 °C.
Fig.10 Minimum noise figure as a function of
collector current.
Fig.11 Minimum noise figure as a function of
frequency.
2000 May 30
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
0.5
45°
2
pot. unst.
region
0.2
5
F
= 1. 3 dB
min
Γ
OPT
1
0.2
0.5
2
5
180°
0°
0
F = 1.5 dB
F = 2 dB
stability
circle
5
0.2
F = 3 dB
0.5
2
−45°
−135°
1
MRC079
1.0
IC = 10 mA; VCE = 8 V;
f = 900 MHz; Zo = 50 Ω.
−90°
Fig.12 Noise circle.
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
0.2
F = 4 dB
5
F = 3 dB
F = 2.5 dB
0.5
0.2
1
2
5
180°
0°
0
Γ
MS
F
= 2. 1 dB
min
Γ
G = 8 dB
0.2
OPT
5
G
= 8.7 dB
max
G = 7 dB
G = 6 dB
0.5
2
−45°
−135°
1
MRC080
1.0
−90°
IC = 10 mA; VCE = 8 V;
f = 2 GHz; Zo = 50 Ω.
Fig.13 Noise circle.
7
2000 May 30
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
0.2
3 GHz
5
0.2
0.5
1
2
5
180°
0°
0
5
0.2
40 MHz
0.5
2
−45°
−135°
1
MRC062
1.0
−90°
IC = 40 mA; VCE = 8 V;
Zo = 50 Ω.
Fig.14 Common emitter input reflection coefficient (s11).
90°
135°
45°
40 MHz
40
3 GHz
180°
0°
50
30
20
10
−135°
−45°
MRC063
−90°
IC = 40 mA; VCE = 8 V.
Fig.15 Common emitter forward transmission coefficient (s21).
8
2000 May 30
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
90°
135°
45°
3 GHz
40 MHz
180°
0°
0.5
0.4
0.3
0.2
0.1
−135°
−45°
MRC064
−90°
IC = 40 mA; VCE = 8 V.
Fig.16 Common emitter reverse transmission coefficient (s12).
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
0.2
5
0.2
0.5
1
2
5
180°
0°
0
3 GHz
40 MHz
5
0.2
0.5
2
−45°
−135°
1
MRC065
1.0
−90°
IC = 40 mA; VCE = 8 V;
Zo = 50 Ω.
Fig.17 Common emitter output reflection coefficient (s22).
9
2000 May 30
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v M
A
E
3
Q
A
A
1
c
1
2
L
p
e
1
b
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT323
SC-70
97-02-28
2000 May 30
10
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 May 30
11
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SCA
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Printed in The Netherlands
613516/04/pp12
Date of release: 2000 May 30
Document order number: 9397 750 07065
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