BFT92,215 [NXP]

BFT92 - PNP 5 GHz wideband transistor TO-236 3-Pin;
BFT92,215
型号: BFT92,215
厂家: NXP    NXP
描述:

BFT92 - PNP 5 GHz wideband transistor TO-236 3-Pin

放大器 光电二极管 晶体管
文件: 总10页 (文件大小:72K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
BFT92  
PNP 5 GHz wideband transistor  
Product specification  
November 1992  
NXP Semiconductors  
Product specification  
PNP 5 GHz wideband transistor  
BFT92  
DESCRIPTION  
PINNING  
PIN  
PNP transistor in a plastic SOT23  
envelope.  
DESCRIPTION  
Code: W1p  
base  
page  
3
It is primarily intended for use in RF  
wideband amplifiers, such as in aerial  
amplifiers, radar systems,  
oscilloscopes, spectrum analyzers,  
etc. The transistor features low  
intermodulation distortion and high  
power gain; due to its very high  
transition frequency, it also has  
excellent wideband properties and  
low noise up to high frequencies.  
1
2
3
emitter  
collector  
1
2
Top view  
MSB003  
Fig.1 SOT23.  
NPN complements are BFR92 and  
BFR92A.  
QUICK REFERENCE DATA  
SYMBOL  
PARAMETER  
collector-base voltage  
CONDITIONS  
TYP. MAX. UNIT  
VCBO  
VCEO  
IC  
open emitter  
open base  
20  
15  
25  
300  
V
collector-emitter voltage  
DC collector current  
total power dissipation  
transition frequency  
feedback capacitance  
V
mA  
mW  
GHz  
pF  
Ptot  
fT  
up to Ts = 95 C; note 1  
IC = 14 mA; VCE = 10 V; f = 500 MHz  
IC = 2 mA; VCE = 10 V; f = 1 MHz  
5
Cre  
0.7  
18  
GUM  
maximum unilateral power gain  
IC = 14 mA; VCE = 10 V;  
f = 500 MHz; Tamb = 25 C  
dB  
F
noise figure  
IC = 5 mA; VCE = 10 V; f = 500 MHz;  
2.5  
dB  
dB  
T
amb = 25 C  
dim  
intermodulation distortion  
IC = 14 mA; VCE = 10 V; RL = 75 ;  
Vo = 150 mV; Tamb = 25 C;  
f(pq-r) = 493.25 MHz  
60  
Note  
1. Ts is the temperature at the soldering point of the collector tab.  
November 1992  
2
 
NXP Semiconductors  
Product specification  
PNP 5 GHz wideband transistor  
BFT92  
LIMITING VALUES  
In accordance with the Absolute Maximum System (IEC 134).  
SYMBOL  
VCBO  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
20  
UNIT  
V
V
V
VCEO  
VEBO  
IC  
collector-emitter voltage  
emitter-base voltage  
DC collector current  
peak collector current  
total power dissipation  
storage temperature  
junction temperature  
open base  
15  
2  
open collector  
25  
35  
300  
150  
175  
mA  
mA  
mW  
C  
ICM  
Ptot  
Tstg  
Tj  
f 1 MHz  
up to Ts = 95 C; note 1  
65  
C  
THERMAL RESISTANCE  
SYMBOL  
PARAMETER  
CONDITIONS  
THERMAL RESISTANCE  
Rth j-s  
thermal resistance from junction to  
soldering point  
up to Ts = 95 C; note 1  
260 K/W  
Note  
1. Ts is the temperature at the soldering point of the collector tab.  
November 1992  
3
 
NXP Semiconductors  
Product specification  
PNP 5 GHz wideband transistor  
BFT92  
CHARACTERISTICS  
Tj = 25 C unless otherwise specified.  
SYMBOL  
ICBO  
PARAMETER  
collector cut-off current  
DC current gain  
CONDITIONS  
IE = 0; VCB = 10 V;  
MIN. TYP. MAX. UNIT  
50  
nA  
hFE  
IC = 14 mA; VCE = 10 V  
20  
50  
5
fT  
transition frequency  
IC = 14 mA; VCE = 10 V;  
GHz  
f = 500 MHz  
Cc  
collector capacitance  
emitter capacitance  
feedback capacitance  
IE = ie = 0; VCB = 10 V; f = 1 MHz  
IC = ic = 0; VEB = 0.5 V; f = 1 MHz  
IC = 2 mA; VCE = 10 V; f = 1 MHz  
0.75  
0.8  
0.7  
18  
pF  
pF  
pF  
dB  
Ce  
Cre  
GUM  
maximum unilateral power gain  
(note 1)  
IC = 14 mA; VCE = 10 V;  
f = 500 MHz; Tamb = 25 C  
F
noise figure  
IC = 5 mA; VCE = 10 V;  
f = 500 MHz; Tamb = 25 C  
2.5  
dB  
Vo  
output voltage  
note 2  
150  
mV  
Notes  
1. GUM is the maximum unilateral power gain, assuming S12 is zero and  
2
S21  
----------------------------------------------------------  
GUM = 10 log  
dB.  
1 S11 21 S22 2  
2.  
dim = 60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 ;  
Vp = Vo at dim = 60 dB; fp = 495.25 MHz;  
Vq = Vo 6 dB; fq = 503.25 MHz;  
Vr = Vo 6 dB; fr = 505.25 MHz;  
measured at f(pq-r) = 493.25 MHz.  
November 1992  
4
 
 
NXP Semiconductors  
Product specification  
PNP 5 GHz wideband transistor  
BFT92  
MEA347  
100  
24 V  
handbook, halfpage  
handbook, halfpage  
h
FE  
820  
Ω
L3  
390 Ω  
3.9 kΩ  
75  
50  
25  
300 Ω  
680 pF  
680 pF  
L2  
75 Ω  
L1  
680 pF  
75 Ω  
DUT  
16 Ω  
MEA919  
0
0
10  
20  
30  
–I (mA)  
C
L2 = L3 = 5 H Ferroxcube choke, catalogue  
number 3122 108 20150.  
L1 = 4 turns 0.35 mm copper wire;  
winding pitch 1 mm; internal diameter 4 mm.  
VCE = 10 V; Tj = 25 C.  
Fig.2 Intermodulation distortion test circuit.  
Fig.3 DC current gain as a function of collector  
current.  
MEA920  
MEA344  
1
6
handbook, halfpage  
handbook, halfpage  
C
c
(pF)  
f
T
0.8  
(GHz)  
4
0.6  
0.4  
2
0
0.2  
0
20  
0
10  
0
10  
20  
30  
–I (mA)  
–V  
(V)  
CB  
C
IE = ie = 0; f = 1 MHz; Tj = 25 C.  
VCE = 10 V; f = 500 MHz; Tj = 25 C.  
Fig.4 Collector capacitance as a function of  
collector-base voltage.  
Fig.5 Transition frequency as a function of  
collector current.  
November 1992  
5
NXP Semiconductors  
Product specification  
PNP 5 GHz wideband transistor  
BFT92  
MEA921  
MEA465  
6
5
handbook, halfpage  
handbook, halfpage  
F
(dB)  
5
F
(dB)  
4
4
3
2
3
2
1
0
1
0
–1  
f (GHz)  
0
5
10  
15  
20  
25  
(mA)  
10  
1
10  
I
C
VCE = 10 V; Zs = opt.; f = 500 MHz; Tamb = 25 C.  
Ic = 2 mA; VCE = 10 V; Zs = opt.; Tamb = 25 C.  
Fig.7 Minimum noise figure as a function of  
frequency.  
Fig.6 Minimum noise figure as a function of  
collector current.  
November 1992  
6
NXP Semiconductors  
Product specification  
PNP 5 GHz wideband transistor  
BFT92  
PACKAGE OUTLINE  
Plastic surface-mounted package; 3 leads  
SOT23  
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M  
B
1
L
p
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.  
1.1  
0.9  
0.48  
0.38  
0.15  
0.09  
3.0  
2.8  
1.4  
1.2  
2.5  
2.1  
0.45  
0.15  
0.55  
0.45  
mm  
0.1  
1.9  
0.95  
0.2  
0.1  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
04-11-04  
06-03-16  
SOT23  
TO-236AB  
November 1992  
7
NXP Semiconductors  
Product specification  
PNP 5 GHz wideband transistor  
BFT92  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DEFINITIONS  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
Product specification The information and data  
provided in a Product data sheet shall define the  
specification of the product as agreed between NXP  
Semiconductors and its customer, unless NXP  
Semiconductors and customer have explicitly agreed  
otherwise in writing. In no event however, shall an  
agreement be valid in which the NXP Semiconductors  
product is deemed to offer functions and qualities beyond  
those described in the Product data sheet.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in life support, life-critical or safety-critical systems or  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
DISCLAIMERS  
Limited warranty and liability Information in this  
document is believed to be accurate and reliable.  
However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to  
the accuracy or completeness of such information and  
shall have no liability for the consequences of use of such  
information.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
In no event shall NXP Semiconductors be liable for any  
indirect, incidental, punitive, special or consequential  
damages (including - without limitation - lost profits, lost  
savings, business interruption, costs related to the  
removal or replacement of any products or rework  
charges) whether or not such damages are based on tort  
(including negligence), warranty, breach of contract or any  
other legal theory.  
Customers are responsible for the design and operation of  
their applications and products using NXP  
Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or  
customer product design. It is customer’s sole  
responsibility to determine whether the NXP  
Notwithstanding any damages that customer might incur  
for any reason whatsoever, NXP Semiconductors’  
aggregate and cumulative liability towards customer for  
the products described herein shall be limited in  
accordance with the Terms and conditions of commercial  
sale of NXP Semiconductors.  
Semiconductors product is suitable and fit for the  
customer’s applications and products planned, as well as  
for the planned application and use of customer’s third  
party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks  
associated with their applications and products.  
November 1992  
8
 
 
NXP Semiconductors  
Product specification  
PNP 5 GHz wideband transistor  
BFT92  
NXP Semiconductors does not accept any liability related  
to any default, damage, costs or problem which is based  
on any weakness or default in the customer’s applications  
or products, or the application or use by customer’s third  
party customer(s). Customer is responsible for doing all  
necessary testing for the customer’s applications and  
products using NXP Semiconductors products in order to  
avoid a default of the applications and the products or of  
the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this  
respect.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Non-automotive qualified products Unless this data  
sheet expressly states that this specific NXP  
Semiconductors product is automotive qualified, the  
product is not suitable for automotive use. It is neither  
qualified nor tested in accordance with automotive testing  
or application requirements. NXP Semiconductors accepts  
no liability for inclusion and/or use of non-automotive  
qualified products in automotive equipment or  
applications.  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) will cause permanent damage to  
the device. Limiting values are stress ratings only and  
(proper) operation of the device at these or any other  
conditions above those given in the Recommended  
operating conditions section (if present) or the  
Characteristics sections of this document is not warranted.  
Constant or repeated exposure to limiting values will  
permanently and irreversibly affect the quality and  
reliability of the device.  
In the event that customer uses the product for design-in  
and use in automotive applications to automotive  
specifications and standards, customer (a) shall use the  
product without NXP Semiconductors’ warranty of the  
product for such automotive applications, use and  
specifications, and (b) whenever customer uses the  
product for automotive applications beyond NXP  
Semiconductors’ specifications such use shall be solely at  
customer’s own risk, and (c) customer fully indemnifies  
NXP Semiconductors for any liability, damages or failed  
product claims resulting from customer design and use of  
the product for automotive applications beyond NXP  
Semiconductors’ standard warranty and NXP  
Terms and conditions of commercial sale NXP  
Semiconductors products are sold subject to the general  
terms and conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an  
individual agreement is concluded only the terms and  
conditions of the respective agreement shall apply. NXP  
Semiconductors hereby expressly objects to applying the  
customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Semiconductors’ product specifications.  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
November 1992  
9
NXP Semiconductors  
provides High Performance Mixed Signal and Standard Product  
solutions that leverage its leading RF, Analog, Power Management,  
Interface, Security and Digital Processing expertise  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal  
definitions and disclaimers. No changes were made to the technical content, except for package outline  
drawings which were updated to the latest version.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2010  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R77/02/pp10  
Date of release: November 1992  

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