BFU725F/N1 [NXP]
NPN wideband silicon germanium RF transistor; NPN宽带硅锗RF晶体管
| 型号： | BFU725F/N1 |
| 厂家： | 
NXP |
| 描述： | NPN wideband silicon germanium RF transistor |
| 文件： | 总11页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFU725F/N1
NPN wideband silicon germanium RF transistor
Rev. 01 — 13 July 2009
Product data sheet
1. Product profile
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features
I Low noise high gain microwave transistor
I Noise figure (NF) = 0.7 dB at 5.8 GHz
I High maximum stable gain 27 dB at 1.8 GHz
I 110 GHz fT silicon germanium technology
1.3 Applications
I 2nd LNA stage and mixer stage in DBS LNB’s
I Satellite radio
I Low noise amplifiers for microwave communications systems
I WLAN and CDMA applications
I Analog/digital cordless applications
I Ka band oscillators (DRO’s)
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
open emitter
Min Typ
Max
10
Unit
V
VCBO
VCEO
VEBO
IC
collector-base voltage
-
-
-
-
-
-
collector-emitter voltage open base
-
2.8
V
emitter-base voltage
collector current
open collector
-
0.55
40
V
25
-
mA
mW
[1]
Ptot
total power dissipation
DC current gain
T
sp ≤ 90 °C
136
400
hFE
IC = 10 mA; VCE = 2 V;
160 280
Tj = 25 °C
BFU725F/N1
NXP Semiconductors
NPN wideband silicon germanium RF transistor
Table 1.
Quick reference data …continued
Symbol Parameter
Conditions
Min Typ
Max
Unit
CCBS
fT
collector-base
capacitance
VCB = 2 V; f = 1 MHz
-
-
-
-
70
55
18
0.7
-
fF
transition frequency
IC = 25 mA; VCE = 2 V;
f = 2 GHz; Tamb = 25 °C
-
-
-
GHz
dB
[2]
Gp(max) maximum power gain
NF noise figure
IC = 25 mA; VCE = 2 V;
f = 5.8 GHz; Tamb = 25 °C
IC = 5 mA; VCE = 2 V;
dB
f = 5.8 GHz; ΓS = Γopt
amb = 25 °C
;
T
[1] Tsp is the temperature at the solder point of the emitter lead.
[2] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG).
2. Pinning information
Table 2.
Discrete pinning
Pin
1
Description
emitter
Simplified outline
Graphic symbol
3
4
4
2
base
3
emitter
2
4
collector
1, 3
2
1
mbb159
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
BFU725F/N1
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
SOT343F
4. Marking
Table 4.
Marking
Type number
BFU725F/N1
Marking
Description
B7*
* = p : made in Hong Kong
* = t : made in Malaysia
* = W : made in China
BFU725F_N1_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 13 July 2009
2 of 11
BFU725F/N1
NXP Semiconductors
NPN wideband silicon germanium RF transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
10
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
-
-
2.8
V
open collector
-
0.55
40
V
-
mA
mW
°C
°C
[1]
Ptot
total power dissipation
storage temperature
junction temperature
T
sp ≤ 90 °C
-
136
+150
150
Tstg
−65
Tj
-
[1] Tsp is the temperature at the solder point of the emitter lead.
6. Thermal characteristics
Table 6.
Symbol Parameter
Rth(j-sp) thermal resistance from junction to solder point
Thermal characteristics
Conditions
Typ Unit
440 K/W
001aah424
200
tot
P
(mW)
150
100
50
0
0
40
80
120
160
T
(°C)
sp
Fig 1. Power derating curve
BFU725F_N1_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 13 July 2009
3 of 11
BFU725F/N1
NXP Semiconductors
NPN wideband silicon germanium RF transistor
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)CBO collector-base breakdown
voltage
IC = 2.5 µA; IE = 0 mA
10
-
-
V
V(BR)CEO collector-emitter breakdown
voltage
IC = 1 mA; IB = 0 mA
2.8
-
-
V
IC
collector current
collector-base cut-off current IE = 0 mA; VCB = 4.5 V
DC current gain IC = 10 mA; VCE = 2 V
collector-emitter capacitance VCB = 2 V; f = 1 MHz
-
-
25
-
40
mA
ICBO
hFE
100 nA
160 280 400
CCES
CEBS
CCBS
fT
-
-
-
-
268
400
70
-
-
-
-
fF
emitter-base capacitance
collector-base capacitance
transition frequency
VEB = 0.5 V; f = 1 MHz
fF
VCB = 2 V; f = 1 MHz
fF
IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C
55
GHz
[1]
Gp(max) maximum power gain
IC = 25 mA; VCE = 2 V; Tamb = 25 °C
f = 1.5 GHz
-
-
-
-
-
28
27
-
-
dB
dB
dB
dB
dB
f = 1.8 GHz
f = 2.4 GHz
25.5 -
f = 5.8 GHz
18
13
-
-
f = 12 GHz
2
|s21
|
insertion power gain
IC = 25 mA; VCE = 2 V; Tamb = 25 °C
f = 1.5 GHz
-
-
-
-
-
26.7 -
25.4 -
dB
dB
dB
dB
dB
f = 1.8 GHz
f = 2.4 GHz
23
16
9.3
-
-
-
f = 5.8 GHz
f = 12 GHz
NF
noise figure
IC = 5 mA; VCE = 2 V; ΓS = Γopt; Tamb = 25 °C
f = 1.5 GHz
-
-
-
-
-
0.42 -
0.43 -
0.47 -
dB
dB
dB
dB
dB
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
0.7
1.1
-
-
f = 12 GHz
Gass
associated gain
IC = 5 mA; VCE = 2 V; ΓS = Γopt; Tamb = 25 °C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
-
-
-
-
-
24
22
20
-
-
-
dB
dB
dB
dB
dB
13.5 -
10
-
BFU725F_N1_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 13 July 2009
4 of 11
BFU725F/N1
NXP Semiconductors
NPN wideband silicon germanium RF transistor
Table 7.
Characteristics …continued
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
PL(1dB)
output power at 1 dB gain
compression
IC = 25 mA; VCE = 2 V; ZS = ZL = 50 Ω; Tamb = 25 °C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
-
-
-
-
8.5
9
-
-
-
-
dBm
dBm
dBm
dBm
8.5
8
IP3
third-order intercept point
IC = 25 mA; VCE = 2 V; ZS = ZL = 50 Ω; Tamb = 25 °C;
f2 = f1 + 1 MHz
f1 = 1.5 GHz
f1 = 1.8 GHz
f1 = 2.4 GHz
f1 = 5.8 GHz
-
-
-
-
17
17
17
19
-
-
-
-
dBm
dBm
dBm
dBm
[1] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG.
001aak271
001aak272
30
400
h
FE
(1)
(2)
I
C
(mA)
(3)
(4)
(5)
(6)
350
300
250
200
20
(7)
(8)
(9)
10
(10)
(11)
(1)
(2)
(3)
0
0
0.5
1.0
1.5
2.0
2.5
3.0
(V)
3.5
0
10
20
30
V
I (mA)
C
CE
Tamb = 25 °C.
Tamb = 25 °C.
(1) IB = 110 µA
(2) IB = 100 µA
(3) IB = 90 µA
(4) IB = 80 µA
(5) IB = 70 µA
(6) IB = 60 µA
(7) IB = 50 µA
(8) IB = 40 µA
(9) IB = 30 µA
(10) IB = 20 µA
(11) IB = 10 µA
(1) VCE = 1 V
(2) VCE = 1.5 V
(3) VCE = 2 V
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
Fig 3. DC current gain a function of collector current;
typical values
BFU725F_N1_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 13 July 2009
5 of 11
BFU725F/N1
NXP Semiconductors
NPN wideband silicon germanium RF transistor
001aah427
001aak273
160
60
C
(fF)
CBS
f
T
(GHz)
120
40
80
40
0
20
0
0
4
8
12
0
10
20
30
40
V
(V)
I (mA)
C
CB
f = 1 MHz, Tamb = 25 °C.
VCE = 2 V; f = 2 GHz; Tamb = 25 °C.
Fig 4. Collector-base capacitance as a function of
collector-base voltage; typical values
Fig 5. Transition frequency as a function of collector
current; typical values
001aah429
2
10
(1)
(2)
(3)
G
(dB)
MSG
(4)
G
max
MSG
(5)
10
G
max
1
10
−1
2
1
10
10
I
(mA)
C
VCE = 2 V; Tamb = 25 °C.
(1) f = 1.5 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
(4) f = 5.8 GHz
(5) f = 12 GHz
Fig 6. Gain as a function of collector current; typical value
BFU725F_N1_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 13 July 2009
6 of 11
BFU725F/N1
NXP Semiconductors
NPN wideband silicon germanium RF transistor
001aah430
001aah431
50
50
G
(dB)
G
(dB)
MSG
40
30
20
10
0
40
MSG
2
IS21I
30
20
2
IS21I
G
p(max)
G
p(max)
MSG
MSG
10
0
10
−2
−1
2
−2
−1
2
10
10
1
10
10
10
1
10
10
f (GHz)
f (GHz)
VCE = 2 V; IC = 5 mA; Tamb = 25 °C.
VCE = 2 V; IC = 25 mA; Tamb = 25 °C.
Fig 7. Gain as a function of frequency; typical values Fig 8. Gain as a function of frequency; typical values
001aah432
001aah433
2.0
2.0
NF
NF
min
min
(dB)
(dB)
1.6
1.2
0.8
0.4
0
1.6
1.2
0.8
0.4
0
(1)
(2)
(1)
(2)
(3)
(4)
(5)
0
10
20
30
0
4
8
12
16
I
(mA)
f (GHz)
C
VCE = 2 V; Tamb = 25 °C.
VCE = 2 V; Tamb = 25 °C.
(1) f = 12 GHz
(2) f = 5.8 GHz
(3) f = 2.4 GHz
(4) f = 1.8 GHz
(5) f = 1.5 GHz
(1) IC = 25 mA
(2) IC = 5 mA
Fig 9. Minimum noise figure as a function of
collector current; typical values
Fig 10. Minimum noise figure as a function of
frequency; typical values
BFU725F_N1_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 13 July 2009
7 of 11
BFU725F/N1
NXP Semiconductors
NPN wideband silicon germanium RF transistor
8. Package outline
Plastic surface-mounted flat pack package; reverse pinning; 4 leads
SOT343F
D
E
A
X
y
H
E
e
3
4
A
c
L
p
2
1
b
p
b
1
M
M
A
w
A
w
detail X
e
1
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
b
p
b
c
D
E
e
e
H
E
L
p
w
y
1
1
max
0.75
0.65
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.48
0.38
mm
1.3
1.15
0.2
0.1
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
05-07-12
06-03-16
SOT343F
Fig 11. Package outline SOT343F
BFU725F_N1_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 13 July 2009
8 of 11
BFU725F/N1
NXP Semiconductors
NPN wideband silicon germanium RF transistor
9. Abbreviations
Table 8.
Abbreviations
Description
Acronym
CDMA
DBS
DC
Code Division Multiple Access
Direct Broadcast Satellite
Direct Current
DRO
LNA
Dielectric Resonator Oscillator
Low Noise Amplifier
LNB
Low Noise Block
Ka
Kurtz above
NPN
RF
Negative-Positive-Negative
Radio Frequency
WLAN
Wireless Local Area Network
10. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFU725F_N1_1
20090713
Product data sheet
-
-
BFU725F_N1_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 13 July 2009
9 of 11
BFU725F/N1
NXP Semiconductors
NPN wideband silicon germanium RF transistor
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BFU725F_N1_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 13 July 2009
10 of 11
BFU725F/N1
NXP Semiconductors
NPN wideband silicon germanium RF transistor
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 13 July 2009
Document identifier: BFU725F_N1_1
相关型号：
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