BFY52 [NXP]
NPN medium power transistors; NPN型中功率晶体管
| 型号： | BFY52 |
| 厂家： | 
NXP |
| 描述： | NPN medium power transistors |
| 文件： | 总8页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFY50; BFY51; BFY52
NPN medium power transistors
1997 Apr 22
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors
Product specification
NPN medium power transistors
BFY50; BFY51; BFY52
FEATURES
PINNING
PIN
• High current (max. 1 A)
• Low voltage (max. 35 V).
DESCRIPTION
1
2
3
emitter
base
APPLICATIONS
collector, connected to case
• General purpose industrial applications.
1
DESCRIPTION
handbook, halfpage
3
2
NPN medium power transistor in a TO-39 metal package.
2
1
3
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
VCBO
collector-base voltage
BFY50
open emitter
open base
−
−
−
−
80
60
40
V
V
V
BFY51
−
−
BFY52
VCEO
collector-emitter voltage
BFY50
−
−
−
−
−
−
−
−
−
−
−
−
35
V
BFY51
30
V
BFY52
20
V
ICM
Ptot
peak collector current
total power dissipation
1
A
T
amb ≤ 25 °C
case ≤ 100 °C
800
2.86
mW
W
T
hFE
DC current gain
BFY50
IC = 150 mA; VCE = 10 V
30
40
60
112
123
142
−
−
−
BFY51
BFY52
fT
transition frequency
BFY50
IC = 50 mA; VCE = 10 V; f = 100 MHz
60
50
−
−
−
−
MHz
MHz
BFY51; BFY52
1997 Apr 22
2
Philips Semiconductors
Product specification
NPN medium power transistors
BFY50; BFY51; BFY52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
BFY50
−
−
−
80
V
V
V
BFY51
60
40
BFY52
VCEO
collector-emitter voltage
BFY50
open base
−
−
−
−
−
−
−
−
−
−
35
V
V
V
V
A
A
BFY51
30
BFY52
20
VEBO
IC
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
open collector
6
1
ICM
IBM
Ptot
1
100
800
5
mA
mW
W
T
amb ≤ 25 °C
case ≤ 25 °C
T
25 °C < Tcase < 100 °C
2.86
+150
200
+150
W
Tstg
Tj
storage temperature
−65
−
°C
°C
°C
junction temperature
Tamb
operating ambient temperature
−65
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
VALUE
220
UNIT
K/W
K/W
thermal resistance from junction to ambient in free air
thermal resistance from junction to case
Rth j-c
35
1997 Apr 22
3
Philips Semiconductors
Product specification
NPN medium power transistors
BFY50; BFY51; BFY52
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
BFY50
CONDITIONS
MIN.
TYP. MAX. UNIT
ICBO
IE = 0; VCB = 60 V
−
−
−
−
−
50
nA
µA
nA
µA
IE = 0; VCB = 60 V; Tj = 100 °C
IE = 0; VCB = 80 V
−
−
−
2.5
500
30
IE = 0; VCB = 80 V; Tj = 100 °C
ICBO
collector cut-off current
BFY51
IE = 0; VCB = 40 V
−
−
−
−
−
−
−
−
50
nA
µA
nA
µA
IE = 0; VCB = 40 V; Tj = 100 °C
IE = 0; VCB = 60 V
2.5
500
30
IE = 0; VCB = 60 V; Tj = 100 °C
ICBO
collector cut-off current
BFY52
IE = 0; VCB = 30 V
−
−
−
−
−
−
−
−
−
−
−
−
−
−
50
nA
µA
nA
µA
nA
µA
nA
IE = 0; VCB = 30 V; Tj = 100 °C
IE = 0; VCB = 40 V
2.5
500
30
IE = 0; VCB = 40 V; Tj = 100 °C
IC = 0; VEB = 5 V
IEBO
emitter cut-off current
50
IC = 0; VEB = 5 V; Tj = 100 °C
IC = 0; VEB = 6 V
2.5
500
hFE
DC current gain
BFY50
IC = 10 mA; VCE = 10 V
IC = 150 mA; VCE = 10 V
IC = 500 mA; VCE = 10 V
IC = 1 A; VCE = 10 V
20
30
20
15
−
−
−
−
−
−
−
−
hFE
DC current gain
BFY51
IC = 10 mA; VCE = 10 V
IC = 150 mA; VCE = 10 V
IC = 500 mA; VCE = 10 V
IC = 1 A; VCE = 10 V
30
40
25
15
−
−
−
−
−
−
−
−
hFE
DC current gain
BFY52
IC = 10 mA; VCE = 10 V
IC = 150 mA; VCE = 10 V
IC = 500 mA; VCE = 10 V
IC = 1 A; VCE = 10 V
30
60
30
15
−
−
−
−
−
−
−
−
1997 Apr 22
4
Philips Semiconductors
Product specification
NPN medium power transistors
BFY50; BFY51; BFY52
SYMBOL
PARAMETER
collector-emitter saturation voltage
BFY50
CONDITIONS
MIN.
TYP. MAX. UNIT
VCEsat
IC = 10 mA; IB = 1 mA
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
−
−
−
−
−
200
200
700
1
mV
mV
mV
V
−
−
−
VCEsat
collector-emitter saturation voltage
BFY51; BFY52
IC = 10 mA; IB = 1 mA
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
7
200
350
1
mV
mV
V
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
1.6
1.2
1.3
1.5
2
V
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 1 mA
V
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
V
V
V
Cc
fT
collector capacitance
transition frequency
BFY50
IE = ie = 0; VCB = 10 V; f = 1 MHz
12
pF
IC = 50 mA; VCE = 10 V;
f = 100 MHz; Tamb = 25 °C
60
50
140
−
−
MHz
MHz
BFY51; BFY52
−
Switching times (between 10% and 90% levels)
ton
td
tr
turn-on time
delay time
rise time
ICon = 150 mA; IBon = 15 mA;
IBoff = −15 mA
−
−
−
−
−
−
55
−
−
−
−
−
−
ns
ns
ns
ns
ns
ns
15
40
toff
ts
turn-off time
storage time
fall time
360
300
60
tf
1997 Apr 22
5
Philips Semiconductors
Product specification
NPN medium power transistors
BFY50; BFY51; BFY52
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT5/11
seating plane
α
j
w
M
M
M
B
A
B
1
b
k
D
1
2
3
a
A
D
A
L
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
a
b
D
D
1
j
k
L
w
α
6.60
6.35
0.48 9.39 8.33
0.41 9.08 8.18
0.85 0.95 14.2
0.75 0.75 12.7
mm
5.08
°
45
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-04-11
SOT5/11
TO-39
1997 Apr 22
6
Philips Semiconductors
Product specification
NPN medium power transistors
BFY50; BFY51; BFY52
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Apr 22
7
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© Philips Electronics N.V. 1997
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 Apr 22
Document order number: 9397 750 02081
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