BGA2031 [NXP]
MMIC variable gain amplifier; MMIC可变增益放大器器
| 型号： | BGA2031 |
| 厂家： | 
NXP |
| 描述： | MMIC variable gain amplifier |
| 文件： | 总12页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BGA2031
MMIC variable gain amplifier
Preliminary specification
1999 Jul 23
Supersedes data of 1999 Feb 26
Philips Semiconductors
Preliminary specification
MMIC variable gain amplifier
BGA2031
FEATURES
PINNING
PIN
• High gain
DESCRIPTION
• Excellent adjacent channel power rejection
• Small SMD package
• Low dissipation.
1
2
3
4
5
RF in
CTRL
VS1
VS2 + RF out
GND
APPLICATIONS
• General purpose variable gain amplifier for low voltage
and medium power
handbook, halfpage
V
S1
• Driver for power amplifiers in systems that require good
linearity, such as CDMA, both cellular band (850 MHz)
and PCS (1.9 GHz). This is because of the high output
power and good linearity.
5
4
RFin
V
+RFout
S2
GND
CTRL
BIAS
CIRCUIT
1
2
3
DESCRIPTION
Top view
MAM429
Silicon Monolitic Microwave Integrated Circuit (MMIC)
2 stage variable gain amplifier in double polysilicon
technology in a 5-pin SOT551A plastic SMD package for
low voltage medium power applications.
Marking code: G1.
Fig.1 Simplified outline (SOT551A) and symbol.
QUICK REFERENCE DATA
SYMBOL
VS1, VS2
IS
PARAMETER
supply voltages
CONDITIONS
TYP.
3.6
MAX.
4.1
UNIT
V
supply current into pin 3 + pin 4
VCTRL = 0
0
−
µA
V
CTRL = 2.7 V; VS = 3.6 V
CTRL = 2.4 V; VS = 3 V
51
30
13.5
63
37
−
mA
mA
dBm
V
PL
load power
at 1 dB gain compression point;
f = 1.9 GHz
ACPR
adjacent channel power rejection
f = 1.9 GHz; PL = 12 dBm
f = 836 MHz; PL = 8 dBm
f = 1.9 GHz; PL = 12 dBm
f = 836 MHz; PL = 8 dBm
f = 836 MHz; PL = 8 dBm
48
55
26
27
70
−
−
−
−
−
dBc
dBc
dB
Gp
power gain
dB
∆G
gain control range
dB
1999 Jul 23
2
Philips Semiconductors
Preliminary specification
MMIC variable gain amplifier
BGA2031
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
VS
PARAMETER
DC supply voltage
CONDITIONS
MIN.
MAX.
4.2
UNIT
−
−
V
ICTRL
control current
VCTRL = 2.7 V;
1.2
mA
VS1 = 4.2 V; VS2 = 4.2 V
IS1
IS2
PD
Ptot
Tstg
Tj
current into pin 3
VS1 = 4.2 V
−
−
−
−
27
mA
mA
dBm
mW
°C
current into pin 4
VS2 = 4.2 V
50
drive power
tbf
total power dissipation
storage temperature
operating junction temperature
Ts ≤ 90 °C
280
+150
150
−65
−
°C
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction
to solder point
Ptot = 280 mW; Ts ≤ 90 °C
215
K/W
1999 Jul 23
3
Philips Semiconductors
Preliminary specification
MMIC variable gain amplifier
BGA2031
CHARACTERISTICS
Tj = 25 °C; ZS = ZL = 50 Ω; VS = 3.6 V; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
800
TYP.
MAX.
UNIT
MHz
f
frequency range
supply voltages
−
2500
4.1
10
VS1, VS2
IS
2.7
−
3.6
0
V
supply current
(in pin 3 + pin 4)
VCTRL = 0
VCTRL = 2.7 V; VS = 3.6 V
CTRL = 2.4 V; VS = 3 V
µA
mA
mA
mA
39
23
0.7
51
63
V
30
37
ICTRL
control current
VCTRL = 2.7 V
0.92
1.1
f = 1900 MHz
f
frequency range
power gain
1850
−
1950
MHz
dB
GP
VCTRL = 2.7 V; PL = 12 dBm
0 < VCTRL < 2.7 V
−
−
−
−
26
61
38
48
−
−
−
−
∆G
GCS
ACPR
gain control range
gain control slope
dB
middle of ∆G
dB/V
dBc
adjacent channel power ±1.23 MHz offset; BWACP = 30 kHz;
rejection
BWcarrier = 1.23 MHz; PL = 10 dBm
±1.98 MHz offset; BWACP = 30 kHz;
−
67
−
dBc
BWcarrier = 1.23 MHz; PL = 10 dBm
PL
load power
at 1 dB gain compression point
−
−
13.5
tbf
−
−
dBm
PN
noise power
in CDMA receive band
dBm/Hz
(1895 − 1955 MHz)
VSWRIN
input VSWR
VCTRL = 2.7 V
VCTRL = 2.7 V
−
−
1:3.5
1:1.6
−
−
VSWROUT
output VSWR
f = 836 MHz
f
frequency range
power gain
824
−
−
849
−
MHz
dB
GP
VCTRL = 2.7 V; PL = 8 dBm
0 < VCTRL < 2.7 V
middle of ∆G
27
70
40
55
∆G
GCS
ACPR
gain control range
gain control slope
−
−
dB
−
−
dB/V
dBc
adjacent channel power ±885 kHz offset; BWACP = 30 kHz;
−
−
rejection
BWcarrier = 1.23 MHz; PL = 8 dBm
±1.98 MHz offset; BWACP = 30 kHz;
−
69
−
dBc
BWcarrier = 1.23 MHz; PL = 8 dBm
PL
load power
at 1 dB gain compression point
−
−
12
tbf
−
−
dBm
PN
noise power
in CDMA receive band
(869 to 894 MHz)
dBm/Hz
VSWRIN
input VSWR
VCTRL = 2.7 V
VCTRL = 2.7 V
−
−
1:2
−
−
VSWROUT
output VSWR
1:1.7
1999 Jul 23
4
Philips Semiconductors
Preliminary specification
MMIC variable gain amplifier
BGA2031
MGS530
MGS529
16
P
L
(dBm)
60
handbook, halfpage
handbook, halfpage
I
S(tot)
(3)
12
(mA)
(2)
(1)
40
8
4
836 MHz
1900 MHz
20
0
−4
−30
0
−20
−10
0
1
2
3
P
(dBm)
V
(V)
D
CTRL
VS = 3.6 V.
(1) Tamb = −30 °C.
(2) Tamb = 25 °C.
(3) Tamb = 85 °C.
VS = 3.6 V; VC = 2.7 V.
Fig.2 Total supply current as a function of control
voltage; typical values.
Fig.3 Load power as a function of the drive power;
typical values.
MGS532
MGS531
40
40
handbook, halfpage
handbook, halfpage
G
P
G
P
(dB)
(dB)
20
20
(1)
(1)
(2)
0
−20
−40
−60
(2)
(3)
(3)
0
−20
−40
0
1
2
3
0
1
2
3
(V)
V
(V)
V
CRTL
CTRL
VS = 3.6 V; f = 836 MHz.
(1) Tamb = −30 °C.
(2) Tamb = 25 °C.
VS = 3.6 V; f = 1.9 GHz.
(1) Tamb = −30 °C.
(2)
Tamb = 25 °C.
(3) Tamb = 85 °C.
(3) Tamb = 85 °C.
Fig.4 Power gain as a function of control voltage;
typical values.
Fig.5 Power gain as a function of control voltage;
typical values.
1999 Jul 23
5
Philips Semiconductors
Preliminary specification
MMIC variable gain amplifier
BGA2031
MGS533
MGS534
0
0
handbook, halfpage
handbook, halfpage
ACPR
(dBc)
ACPR
(dBc)
−20
−20
offset = 1.23 MHz
offset = 0.885 MHz
−40
−60
−80
−40
−60
−80
offset = 1.98 MHz
offset = 1.98 MHz
−16
−12
−8
−4
0
4
8
12
−20
−16
−12
−8
−4
0
4
8
P
(dBm)
P
(dBm)
L
L
VS = 3.6 V; f = 1.9 GHz; PD = −13.5 dBm.
VS = 3.6 V; f = 836 MHz; PD = −19 dBm.
Fig.6 Adjacent channel power rejection as a
function of the load power; typical values.
Fig.7 Adjacent channel power rejection as a
function of the load power; typical values.
1999 Jul 23
6
Philips Semiconductors
Preliminary specification
MMIC variable gain amplifier
BGA2031
ELECTRICAL BLOCK DIAGRAM
R2
C3
V
S2
V
S1
C2
V
S1
V
-RFout
S2
IN
RF input
RF output
L1
L2
DC-block
Bias-T
GND
GND
R1
CTRL
BIAS
CIRCUIT
V
ctrl
C1
MGS535
Fig.8 Test diagram.
List of components (see Fig.8)
COMPONENT
C1
DESCRIPTION
VALUE
DIMENSIONS
0603
CATALOGUE NO.
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
stripline; note 1
10 nF
tbf
tbf
tbf
tbf
tbf
tbf
C2
22 nF
0603
0603
C3
1.5 nF
L1, L2
R1
50 Ω
SMD resistor
22 Ω; 0.16 W
2.4 Ω; 0.16 W
0603
0603
R2
SMD resistor
Note
1. The striplines are on a gold plated double copper-clad printed-circuit board (εr = 6.15), board thickness = 0.64 mm,
copper thickness = 35 µm, gold thickness = 5 µm.
1999 Jul 23
7
Philips Semiconductors
Preliminary specification
MMIC variable gain amplifier
BGA2031
PACKAGE OUTLINE
Plastic surface mounted package; 5 leads
SOT551A
Package under
development
Philips Semiconductors reserves the
right to make changes without notice.
E
A
X
D
B
y
H
v
M
A
E
e
2
b
1
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
b
p
w
M B
L
p
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
b
c
D
E
e
e
e
2
H
E
L
Q
v
w
y
p
p
1
1
max
0.3
0.2
0.8
1.0
1.1
0.9
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
0.65
1.3
0.975
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
1999-05-07
SOT551A
1999 Jul 23
8
Philips Semiconductors
Preliminary specification
MMIC variable gain amplifier
BGA2031
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jul 23
9
Philips Semiconductors
Preliminary specification
MMIC variable gain amplifier
BGA2031
NOTES
1999 Jul 23
10
Philips Semiconductors
Preliminary specification
MMIC variable gain amplifier
BGA2031
NOTES
1999 Jul 23
11
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© Philips Electronics N.V. 1999
SCA67
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125006/03/pp12
Date of release: 1999 Jul 23
Document order number: 9397 750 06072
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