BGD712C [NXP]
750 MHz, 18.5 dB gain power doubler amplifier; 750 MHz的18.5 dB增益功率倍增放大器器型号: | BGD712C |
厂家: | NXP |
描述: | 750 MHz, 18.5 dB gain power doubler amplifier |
文件: | 总7页 (文件大小:48K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BGD712C
750 MHz, 18.5 dB gain power doubler amplifier
Rev. 02 — 16 August 2007
Product data sheet
1. Product profile
1.1 General description
Hybrid high dynamic range amplifier module in SOT115J package operating at a supply
voltage of 24 V (DC).
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Excellent linearity
I Extremely low noise
I Excellent return loss properties
I Silicon nitride passivation
I Rugged construction
I Gold metallization ensures excellent reliability
1.3 Applications
I CATV systems operating in the 40 MHz to 750 MHz frequency range.
1.4 Quick reference data
Table 1:
Quick reference data
Symbol Parameter
Conditions
f = 45 MHz
f = 750 MHz
VB = 24 V
Min Typ Max Unit
Gp
Itot
power gain
total current
18.2
19
-
-
-
18.8 dB
20 dB
410 mA
[1]
380
[1] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
BGD712C
NXP Semiconductors
750 MHz, 18.5 dB gain power doubler amplifier
2. Pinning information
Table 2:
Pinning
Pin
1
Description
input
Simplified outline
Symbol
5
2
common
common
+VB
1 3 5 7 9
1
9
3
5
2
3 7 8
7
common
common
output
sym095
8
9
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name
-
Description
Version
BGD712C
rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2 × 6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
-
Max
30
Unit
V
VB
supply voltage
Vi
input voltage
-
70
dBmV
°C
Tstg
Tmb
storage temperature
mounting base temperature
−40
−20
+100
+100
°C
BGD712C_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 August 2007
2 of 7
BGD712C
NXP Semiconductors
750 MHz, 18.5 dB gain power doubler amplifier
5. Characteristics
Table 5:
Characteristics
Bandwidth 40 MHz to 750 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω.
Symbol
Parameter
Conditions
Min
18.2
19.0
0.5
-
Typ
Max
18.8
20.0
1.5
Unit
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
Gp
power gain
f = 45 MHz
-
-
-
-
-
-
-
-
-
-
f = 750 MHz
SL
FL
slope cable equivalent
f = 45 MHz to 750 MHz
f = 45 MHz to 100 MHz
f = 100 MHz to 700 MHz
f = 700 MHz to 750 MHz
f = 45 MHz to 790 MHz
f = 45 MHz to 790 MHz
f = 50 MHz
flatness of frequency response
±0.35
±0.5
±0.15
-
-
-
S11
input return losses
output return losses
phase response
17
17
135
-
S22
-
ϕs21
CTB
225
−62
composite triple beat
112 channels flat;
Vo = 44 dBmV;
measured at 745.25 MHz
60 channels flat;
Vo = 44 dBmV
measured at 745.25 MHz
-
-
-
-
-
−67
-
dB
dB
dB
dB
dB
79 channels flat;
Vo = 44 dBmV
measured at 547.25 MHz
-
−68
−63
-
CSO
composite second-order
distortion
112 channels flat;
Vo = 44 dBmV;
measured at 746.5 MHz
-
60 channels flat;
Vo = 44 dBmV
measured at 746.5 MHz
−70
79 channels flat;
-
−68
Vo = 44 dBmV
measured at 548.5 MHz
NF
Itot
noise figure
total current
f = 50 MHz
-
-
-
-
7
dB
dB
mA
f = 750 MHz
-
7
[1]
380
410
[1] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
BGD712C_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 August 2007
3 of 7
BGD712C
NXP Semiconductors
750 MHz, 18.5 dB gain power doubler amplifier
6. Package outline
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A
2
1
2
3
5
7
8
9
A
L
F
S
W
e
b
M
w
x
c
e
1
d
q
y
M
B
2
U
Q
2
B
q
M
B
1
y
M
B
p
U
q
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
d
max.
A
max.
D
max.
E
max.
L
min.
Q
max.
Z
y
2
UNIT
e
e
p
q
W
w
x
b
c
F
q
q
S
U
U
2
1
1
2
1
max.
max.
4.15
3.85
0.51
0.38
44.75 8.2 6-32
44.25 7.8 UNC
mm 20.8 9.1
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8
2.4 38.1 25.4 10.2 4.2
0.25 0.7 0.1 3.8
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-02-06
04-02-04
SOT115J
Fig 1. Package outline SOT115J
BGD712C_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 August 2007
4 of 7
BGD712C
NXP Semiconductors
750 MHz, 18.5 dB gain power doubler amplifier
7. Revision history
Table 6:
Revision history
Document ID
BGD712C_2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20070816
Product data sheet
-
BGD712C_1
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Changed descriptive title
BGD712C_1
20060502
Product data sheet
-
-
BGD712C_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 August 2007
5 of 7
BGD712C
NXP Semiconductors
750 MHz, 18.5 dB gain power doubler amplifier
8. Legal information
8.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
8.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
8.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
8.4
Trademarks
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
9. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BGD712C_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 August 2007
6 of 7
BGD712C
NXP Semiconductors
750 MHz, 18.5 dB gain power doubler amplifier
10. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
7
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 5
8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 6
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 6
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
8.1
8.2
8.3
8.4
9
Contact information. . . . . . . . . . . . . . . . . . . . . . 6
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 16 August 2007
Document identifier: BGD712C_2
相关型号:
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