BGD814,112 [NXP]
BGD814 - 870 MHz, 20 dB gain power doubler amplifier SFM 7-Pin;型号: | BGD814,112 |
厂家: | NXP |
描述: | BGD814 - 870 MHz, 20 dB gain power doubler amplifier SFM 7-Pin 高功率电源 射频 微波 |
文件: | 总10页 (文件大小:85K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
BGD814
860 MHz, 20 dB gain power
doubler amplifier
Product specification
2001 Nov 01
Supersedes data of 2001 Sep 07
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
BGD814
FEATURES
PINNING - SOT115J
PIN
Excellent linearity
DESCRIPTION
Extremely low noise
1
2, 3
5
input
Excellent return loss properties
Silicon nitride passivation
Rugged construction
common
+VB
7, 8
9
common
output
Gold metallization ensures excellent reliability.
APPLICATIONS
handbook, halfpage
CATV systems operating in the 40 to 870 MHz
2
8
1
3
5
7
9
frequency range.
DESCRIPTION
Side view
MSA319
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
Gp
PARAMETER
CONDITIONS
f = 45 MHz
MIN.
19.7
MAX.
UNIT
dB
power gain
20.3
21.5
410
f = 870 MHz
VB = 24 V
20.5
380
dB
Itot
total current consumption (DC)
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER
VB
MIN.
MAX.
UNIT
supply voltage
30
V
Vi
RF input voltage
storage temperature
70
dBmV
C
Tstg
Tmb
40
20
+100
+100
operating mounting base temperature
C
2001 Nov 01
2
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
BGD814
CHARACTERISTICS
Bandwidth 40 to 870 MHz; VB = 24 V; Tmb = 35 C; ZS = ZL = 75 .
SYMBOL
PARAMETER
power gain
CONDITIONS
MIN.
TYP. MAX. UNIT
Gp
f = 45 MHz
19.7
20.5
0.5
20.3
21.5
1.5
dB
dB
dB
f = 870 MHz
SL
FL
slope straight line
f = 45 to 870 MHz; note 1
f = 45 to 100 MHz
flatness straight line
0.25 dB
f = 100 to 800 MHz
0.5
0.1
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
f = 800 to 870 MHz
0.4
25
22
19
17
17
16
15
12
24
22
17
18
16
15
15
13
45
s11
input return losses
f = 45 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 650 MHz
f = 650 to 750 MHz
f = 750 to 870 MHz
f = 870 to 914 MHz
s22
output return losses
f = 45 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 650 MHz
f = 650 to 750 MHz
f = 750 to 870 MHz
f = 870 to 914 MHz
s21
phase response
f = 50 MHz
+45
66
CTB
composite triple beat
79 chs flat; Vo = 44 dBmV; fm = 547.25 MHz
112 chs flat; Vo = 44 dBmV; fm = 745.25 MHz
132 chs flat; Vo = 44 dBmV; fm = 859.25 MHz
60.5 dB
56 dB
55.5 dB
112 chs; fm = 547.25 MHz; Vo = 50.2 dBmV at
745 MHz; note 2
79 chs; fm = 331.25 MHz; Vo = 47.3 dBmV at
547 MHz; note 3
65
dB
Xmod
cross modulation
79 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
112 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
132 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
66
dB
62.5 dB
61
57
dB
dB
112 chs; fm = 745.25 MHz; Vo = 50.2 dBmV at
745 MHz; note 2
79 chs; fm = 445.25 MHz; Vo = 47.3 dBmV at
547 MHz; note 3
66
dB
2001 Nov 01
3
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
BGD814
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
CSO
composite second
order distortion
79 chs flat; Vo = 44 dBmV; fm = 548.5 MHz
112 chs flat; Vo = 44 dBmV; fm = 746.5 MHz
132 chs flat; Vo = 44 dBmV; fm = 860.5 MHz
68
61
57
56
dB
dB
dB
dB
112 chs; fm = 210 MHz; Vo = 50.2 dBmV at
745 MHz; note 2
79 chs; fm = 210 MHz; Vo = 47.3 dBmV at
547 MHz; note 3
64
dB
d2
second order distortion note 4
69
dB
Vo
output voltage
dim = 60 dB; note 5
64
48
dBmV
dBmV
CTB compression = 1 dB; 132 chs flat;
f = 859.25 MHz
CSO compression = 1 dB; 132 chs flat;
f = 860.5 MHz
50
dBmV
NF
noise figure
f = 50 MHz
f = 550 MHz
f = 750 MHz
f = 870 MHz
note 6
5.5
5.5
6.5
7.5
410
dB
dB
dB
dB
mA
Itot
total current
380
395
consumption (DC)
Notes
1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz.
2. Tilt = 10.2 dB (55 to 745 MHz).
3. Tilt = 7.3 dB (55 to 547 MHz).
4. fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz.
5. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo 6 dB; fr = 860.25 MHz;
Vr = Vo 6 dB; measured at fp + fq fr = 849.25 MHz.
6. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V.
2001 Nov 01
4
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
BGD814
MLD345
MLD346
−50
52
−40
52
handbook, halfpage
handbook, halfpage
(1)
(1)
X
V
o
(dBmV)
V
CTB
(dB)
mod
(dB)
o
(dBmV)
−60
−70
−80
48
−50
48
44
40
36
−60
−70
44
(2)
(3)
(2)
(4)
40
(3)
(4)
36
1000
−90
−80
0
200
400
600
800
1000
0
200
400
600
800
f (MHz)
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(3) Typ.
(1) Vo.
(3) Typ.
(2) Typ. +3 .
(4) Typ. 3 .
(2) Typ. +3 .
(4) Typ. 3 .
Fig.2 Composite triple beat as a function of
frequency under tilted conditions.
Fig.3 Cross modulation as a function of frequency
under tilted conditions.
MLD347
−60
52
handbook, halfpage
(1)
V
CSO
(dB)
o
(2)
(dBmV)
−70
48
(3)
−80
44
40
36
−90
(4)
−100
0
200
400
600
800
1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(3) Typ.
(2) Typ. +3 .
(4) Typ. 3 .
Fig.4 Composite second order distortion as a
function of frequency under tilted conditions.
2001 Nov 01
5
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
BGD814
MLD348
MLD349
−40
52
−40
52
handbook, halfpage
handbook, halfpage
(1)
(1)
X
V
V
o
(dBmV)
mod
(dB)
CTB
(dB)
o
(dBmV)
−50
−60
−70
48
−50
48
(2)
(3)
44
(2)
(3)
(4)
44
40
36
−60
−70
(4)
40
36
1000
−80
−80
0
200
400
600
800
1000
0
200
400
600
800
f (MHz)
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(3) Typ.
(1) Vo.
(3) Typ.
(2) Typ. +3 .
(4) Typ. 3 .
(2) Typ. +3 .
(4) Typ. 3 .
Fig.5 Composite triple beat as a function of
frequency under tilted conditions.
Fig.6 Cross modulation as a function of frequency
under tilted conditions.
MLD350
−50
52
handbook, halfpage
(1)
V
CSO
(dB)
o
(dBmV)
−60
48
(2)
(3)
−70
44
40
36
(4)
−80
−90
0
200
400
600
800
1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(3) Typ.
(2) Typ. +3 .
(4) Typ. 3 .
Fig.7 Composite second order distortion as a
function of frequency under tilted conditions.
2001 Nov 01
6
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
BGD814
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A
2
1
2
3
5
7
8
9
A
L
F
S
W
e
b
M
w
x
c
e
1
d
q
y
M
B
2
U
Q
2
B
q
M
B
1
y
M
B
p
U
q
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
A
max.
D
max.
E
max.
L
min.
Q
max.
Z
max.
2
UNIT
e
e
p
q
W
w
x
y
b
c
d
F
q
q
S
U
U
2
1
1
2
1
max.
4.15
3.85
0.51
0.38
2.04
2.54
44.75 8.2 6-32
44.25 7.8 UNC
mm 20.8 9.5
0.25 27.2
13.75 2.54 5.08 12.7 8.8
2.4 38.1 25.4 10.2 4.2
0.25 0.7 0.1 3.8
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEITA
04-02-04
10-06-18
SOT115J
2001 Nov 01
7
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
BGD814
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
2001 Nov 01
8
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
BGD814
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Terms and conditions of commercial sale NXP
Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Semiconductors’ product specifications.
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
2001 Nov 01
9
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613518/04/pp10
Date of release: 2001 Nov 01
Document order number: 9397 750 08857
相关型号:
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