BGD904L,112 [NXP]
RF/Microwave Amplifier, 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT115J, 7 PIN;
| 型号： | BGD904L,112 |
| 厂家： | 
NXP |
| 描述： | RF/Microwave Amplifier, 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT115J, 7 PIN 高功率电源 放大器 射频 微波 功率放大器 |
| 文件： | 总12页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BGD904L
860 MHz, 20 dB gain power
doubler amplifier
Product specification
2001 Nov 01
Supersedes data of 1999 Aug 17
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
BGD904L
FEATURES
PINNING - SOT115J
• Excellent linearity
PIN
DESCRIPTION
• Extremely low noise
1
2
3
5
7
8
9
input
• Excellent return loss properties
• Silicon nitride passivation
• Rugged construction
common
common
+VB
• Gold metallization ensures excellent reliability
• Low DC current consumption.
common
common
output
APPLICATIONS
• CATV systems operating in the 40 to 900 MHz
frequency range.
handbook, halfpage
2
8
1
3
5
7
9
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a supply voltage of 24 V.
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
Gp
PARAMETER
CONDITIONS
MIN.
19.7
MAX.
UNIT
dB
power gain
f = 50 MHz
20.3
21.5
380
f = 900 MHz
VB = 24 V
20.5
350
dB
Itot
total current consumption (DC)
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER
VB
MIN.
MAX.
UNIT
supply voltage
−
30
V
Vi
RF input voltage
storage temperature
−
70
dBmV
°C
Tstg
Tmb
−40
−20
+100
+100
operating mounting base temperature
°C
2001 Nov 01
2
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
BGD904L
CHARACTERISTICS
Bandwidth 40 to 900 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω.
SYMBOL
PARAMETER
power gain
CONDITIONS
f = 50 MHz
MIN.
19.7
TYP.
20
MAX.
UNIT
dB
Gp
20.3
21.5
1.4
±0.3
−
f = 900 MHz
20.5
0.4
−
21
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
SL
FL
slope straight line
flatness straight line
input return losses
f = 40 to 900 MHz
f = 40 to 900 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 650 MHz
f = 650 to 900 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 750 MHz
f = 750 to 900 MHz
f = 50 MHz
0.9
±0.15
25
S11
21
22
21
18
17
16
25
23
19
18
17
−45
−
30
−
29
−
24
−
22
−
21
−
S22
output return losses
29
−
28
−
25
−
24
−
23
−
S21
phase response
−
+45
−64
CTB
composite triple beat
49 channels flat; Vo = 47 dBmV;
fm = 859.25 MHz
−65.5
77 channels flat; Vo = 44 dBmV;
fm = 547.25 MHz
−
−
−
−
−
−
−
−
−
−
−
−67.5
−61
−65.5
−59.5
−55
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
110 channels flat; Vo = 44 dBmV;
fm = 745.25 MHz
129 channels flat; Vo = 44 dBmV;
fm = 859.25 MHz
−57
110 channels; fm = 397.25 MHz;
Vo = 49 dBmV at 550 MHz; note 1
−61.5
−56
−59.5
−54
129 channels; fm = 649.25 MHz;
Vo = 49.5 dBmV at 860 MHz; note 2
Xmod
cross modulation
49 channels flat; Vo = 47 dBmV;
fm = 55.25 MHz
−64
−61
77 channels flat; Vo = 44 dBmV;
fm = 55.25 MHz
−66.5
−63
−64
110 channels flat; Vo = 44 dBmV;
fm = 55.25 MHz
−60.5
−59
129 channels flat; Vo = 44 dBmV;
fm = 55.25 MHz
−61.5
−60
110 channels; fm = 397.25 MHz;
Vo = 49 dBmV at 550 MHz; note 1
−57.5
−53.5
129 channels; fm = 859.25 MHz;
−56
Vo = 49.5 dBmV at 860 MHz; note 2
2001 Nov 01
3
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
BGD904L
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
−69
MAX.
UNIT
dB
CSO
composite second order
distortion
49 channels flat; Vo = 47 dBmV;
fm = 860.5 MHz
−
−
−
−
−
−
−63
77 channels flat; Vo = 44 dBmV;
fm = 548.5 MHz
−73
−69
−65
−68
−63
−68
−63
−59
−63
−58
dB
dB
dB
dB
dB
110 channels flat; Vo = 44 dBmV;
fm = 746.5 MHz
129 channels flat; Vo = 44 dBmV;
fm = 860.5 MHz
110 channels; fm = 150 MHz;
Vo = 49 dBmV at 550 MHz; note 1
129 channels; fm = 150 MHz;
Vo = 49.5 dBmV at 860 MHz; note 2
d2
second order distortion
output voltage
note 3
−
−
−
−82
−83
−83
64
−75
−76
−77
−
dB
note 4
dB
note 5
dB
Vo
dim = −60 dB; note 6
62.5
63.5
65.5
47.5
dBmV
dBmV
dBmV
dBmV
d
im = −60 dB; note 7
im = −60 dB; note 8
65.5
67.5
48.5
−
d
−
CTB compression = 1 dB;
−
129 channels flat; f = 859.25 MHz
CSO compression = 1 dB;
50
52
−
dBmV
129 channels flat; f = 860.5 MHz
NF
noise figure
f = 50 MHz
f = 550 MHz
f = 750 MHz
f = 900 MHz
−
3.8
4.1
4.8
5.9
365
5
dB
dB
dB
dB
mA
−
5.5
6.5
7.5
380
−
−
Itot
total current consumption (DC) note 9
350
Notes
1. Tilt = 9 dB (50 to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
2. Tilt = 12.5 dB (50 to 860 MHz).
3. fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz.
4. fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz.
5. fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz.
6. Measured according to DIN45004B:
fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo −6 dB;
fr = 860.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 849.25 MHz.
7. Measured according to DIN45004B:
fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo −6 dB; fr = 749.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 738.25 MHz.
8. Measured according to DIN45004B:
fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo −6 dB; fr = 549.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 538.25 MHz.
9. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V.
2001 Nov 01
4
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
BGD904L
MGS452
MGS453
−50
52
−50
52
handbook, halfpage
handbook, halfpage
X
V
V
o
(dBmV)
CTB
(dB)
mod
o
(2)
(3)
(4)
(2)
(3)
(4)
(1)
(1)
(dB)
(dBmV)
−60
−70
−80
48
−60
48
(2)
(3)
(4)
44
40
36
−70
−80
44
40
36
(1)
(1)
−90
−90
0
200
400
600
800
0
200
400
600
800
f (MHz)
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
(1) Vo.
(3) Typ.
(1) Vo.
(3) Typ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
Fig.2 Composite triple beat as a function of
frequency under tilted conditions.
Fig.3 Cross modulation as a function of frequency
under tilted conditions.
MGS454
−50
52
handbook, halfpage
V
CSO
(dB)
(1)
o
(dBmV)
−60
48
(2)
(1)
(2)
(3)
−70
44
40
36
(3)
(4)
(4)
−80
−90
0
200
400
600
800
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
(1) Vo.
(3) Typ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
Fig.4 Composite second order distortion as a
function of frequency under tilted
conditions.
2001 Nov 01
5
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
BGD904L
MGS455
MGS456
−50
52
−50
52
handbook, halfpage
handbook, halfpage
(2)
X
V
V
CTB
(dB)
mod
(2)
(1)
o
o
(3)
(dB)
(dBmV)
(dBmV)
(1)
(4)
(3)
−60
−70
−80
48
−60
48
(4)
44
40
36
−70
−80
44
40
36
−90
−90
0
200
400
600
800
1000
0
200
400
600
800
1000
f (MHz)
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 129 chs;
ZS = ZL = 75 Ω; VB = 24 V; 129 chs;
tilt = 12.5 dB; (50 to 860 MHz).
tilt = 12.5 dB; (50 to 860 MHz).
(1) Vo.
(3) Typ.
(1) Vo.
(3) Typ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
Fig.5 Composite triple beat as a function of
frequency under tilted conditions.
Fig.6 Cross modulation as a function of frequency
under tilted conditions.
MGS457
−50
52
handbook, halfpage
V
o
(dBmV)
CSO
(dB)
(1)
−60
48
(2)
−70
44
40
36
(3)
(4)
−80
−90
0
200
400
600
800
1000
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 129 chs;
tilt = 12.5 dB; (50 to 860 MHz).
(1) Vo.
(3) Typ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
Fig.7 Composite second order distortion as a
function of frequency under tilted
conditions.
2001 Nov 01
6
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
BGD904L
MGS458
MGS459
−20
−30
handbook, halfpage
handbook, halfpage
CTB
(dB)
CSO
(dB)
−30
−40
−50
−60
−40
−50
−60
−70
(1)
(2)
(3)
(1)
(2)
(3)
−70
−80
40
45
50
55
40
45
50
55
V
(dBmV)
V (dBmV)
o
o
ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 859.25 MHz.
ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 860.5 MHz.
(1) Typ. +3 σ.
(2) Typ.
(1) Typ. +3 σ.
(2) Typ.
(3) Typ. −3 σ.
(3) Typ. −3 σ.
Fig.8 Composite triple beat as a function of output
voltage.
Fig.9 Composite second order distortion as a
function of output voltage.
2001 Nov 01
7
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
BGD904L
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A
2
1
2
3
5
7
8
9
A
L
F
S
W
e
b
M
w
y
c
e
1
d
q
y
M
B
2
U
Q
2
B
q
M
B
1
y
M
B
p
U
q
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
U
A
d
max.
A
max.
D
max.
E
max.
L
min.
Q
max.
Z
max.
1
2
UNIT
e
e
p
q
W
w
y
b
c
F
q
q
S
U
1
1
2
2
max.
max.
4.15
3.85
0.51
0.38
6-32
UNC
mm 20.8 9.1
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8
2.4 38.1 25.4 10.2 4.2 44.75
8
0.25 0.1 3.8
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
99-02-06
SOT115J
2001 Nov 01
8
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
BGD904L
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Nov 01
9
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
BGD904L
NOTES
2001 Nov 01
10
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
BGD904L
NOTES
2001 Nov 01
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613518/03/pp12
Date of release: 2001 Nov 01
Document order number: 9397 750 08859
相关型号：
BGD906,112
RF/Microwave Amplifier, 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT-115J, 7 PIN
NXP
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