BGY135 [NXP]
VHF power amplifier modules; 甚高频功率放大器模块
| 型号： | BGY135 |
| 厂家： | 
NXP |
| 描述： | VHF power amplifier modules |
| 文件： | 总10页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BGY135; BGY136
VHF power amplifier modules
1996 May 08
Product specification
Supersedes data of June 1993
File under Discrete Semiconductors, SC09
Philips Semiconductors
Product specification
VHF power amplifier modules
BGY135; BGY136
FEATURES
PINNING - SOT132B
PIN
• 12.5 V nominal supply voltage
• 18 W output power.
DESCRIPTION
1
RF input
2
ground
VS1
APPLICATIONS
3
4
ground
VS2
• Mobile communication equipment operating directly
from 12 V vehicle electrical systems.
5
6
7
ground
DESCRIPTION
RF output
ground
Flange
The BGY135 and BGY136 are two-stage broadband RF
amplifier modules in a SOT132B package. Each module
consists of two NPN transistor dies together with
lumped-element matching components.
handbook, halfpage
5 6 7
1 2 3 4
Top view
MSB029
Fig.1 Simplified outline.
QUICK REFERENCE DATA
TYPE
MODE OF
f
VS1; VS2
PD
PL
ZS; ZL
NUMBER
OPERATION
(MHz)
(V)
(mW)
(W)
(Ω)
BGY135
BGY136
CW
CW
132 to 156
146 to 174
12.5
150
≥18
50
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO inserts are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 May 08
2
Philips Semiconductors
Product specification
VHF power amplifier modules
BGY135; BGY136
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VS1
PARAMETER
MIN.
MAX.
15.6
UNIT
DC supply voltage
DC supply voltage
RF input voltage
RF output voltage
input drive power
load power
−
−
−
−
−
−
V
V
V
V
VS2
Vi
15.6
25
Vo
25
PD
PL
300
25
mW
W
Tstg
Th
storage temperature
−40
−20
+100
+90
°C
heatsink operating temperature
°C
MRC267
30
handbook, halfpage
P
L
(W)
20
10
0
–50
0
50
100
T
(°C)
h
VS1 = VS2 ≤ 12.5 V; VSWR = 1 : 1.
Fig.2 Power derating curve.
1996 May 08
3
Philips Semiconductors
Product specification
VHF power amplifier modules
BGY135; BGY136
CHARACTERISTICS
ZS = ZL = 50 Ω; PD = 150 mW; VS1 = VS2 = 12.5 V; Th = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
frequency
CONDITIONS
MIN.
TYP.
MAX.
UNIT
f
BGY135
BGY136
132
−
−
−
−
156
MHz
146
−
174
1
MHz
mA
W
IQ2
PL
η
leakage current
load power
efficiency
VS1 = 0; PD = 0
18
38
−
−
adjust PD for PL = 18 W
adjust PD for PL = 18 W
adjust PD for PL = 18 W
adjust PD for PL = 18 W
45
−
−
%
H2
H3
second harmonic
third harmonic
input VSWR
stability
−25
−25
3
dBc
dBc
−
−
VSWRin
−
1.5
−
VS1 = VS2 = 10.8 to 15.6 V;
−
−60
dBc
PL = 2 to 20 W; VSWR = 3 : 1
ruggedness
PD ≤ 300 mW;
V
S1 = VS2 = 15.6 V duration 5 s;
no degradation
PL < 25 W; VSWR = 50 : 1
MRC261
MRC266
35
30
handbook, halfpage
handbook, halfpage
P
L
(W)
30
f = 146 MHz
P
L
(W)
161 MHz
174 MHz
f =
25
20
15
10
5
132 MHz
144 MHz
156 MHz
20
10
0
0
0
0
100
200
300
100
200
300
P
(mW)
P
(mW)
D
D
VS1 = VS2 = 12.5 V.
VS1 = VS2 = 12.5 V.
Fig.3 Load power as a function of drive power;
BGY135; typical values.
Fig.4 Load power as a function of drive power;
BGY136; typical values.
1996 May 08
4
Philips Semiconductors
Product specification
VHF power amplifier modules
BGY135; BGY136
MRC259
MRC264
60
60
handbook, halfpage
handbook, halfpage
η
η
(%)
(%)
40
20
40
20
0
140
0
120
150
160
170
180
130
140
150
160
f (MHz)
f (MHz)
VS1 = VS2 = 12.5 V; PL = 18 W.
VS1 = VS2 = 12.5 V; PL = 18 W.
Fig.5 Efficiency as a function of frequency;
BGY135; typical values.
Fig.6 Efficiency as a function of frequency;
BGY136; typical values.
MRC262
MRC274
30
30
handbook, halfpage
handbook, halfpage
V
= 12.5 V
10.8 V
S
P
P
L
(W)
L
(W)
V
= 12.5 V
10.8 V
S
20
20
10
10
0
140
0
120
150
160
170
180
130
140
150
160
f (MHz)
f (MHz)
PD = 150 mW.
PD = 150 mW.
Fig.7 Load power as a function of frequency;
BGY135; typical values.
Fig.8 Load power as a function of frequency;
BGY136; typical values.
1996 May 08
5
Philips Semiconductors
Product specification
VHF power amplifier modules
BGY135; BGY136
MRC265
MRC260
–20
–20
handbook, halfpage
handbook, halfpage
H
H
3
H
H
3
2,
(dBc)
2,
(dBc)
–40
–40
H
H
H
H
2
2
3
–60
–80
–60
–80
3
120
130
140
150
160
140
150
160
170
180
f (MHz)
f (MHz)
VS1 = VS2 = 12.5 V; PL = 18 W.
VS1 = VS2 = 12.5 V; PL = 18 W.
Fig.9 Harmonics as a function of frequency;
BGY135; typical values.
Fig.10 Harmonics as a function of frequency;
BGY136; typical values.
MRC268
MRC263
30
25
handbook, halfpage
handbook, halfpage
P
L
146 MHz
174 MHz
P
132 MHz
156 MHz
L
(W)
(W)
20
20
15
10
5
10
0
−25
0
–25
0
50
100
0
25
50
75
T
100
(°C)
T
(°C)
mb
mb
PD = 150 mW; VS1 = VS2 = 12.5 V.
PD = 150 mW; VS1 = VS2 = 12.5 V.
Fig.11 Load power as a function of mounting base
temperature; BGY135; typical values.
Fig.12 Load power as a function of mounting base
temperature; BGY136; typical values.
1996 May 08
6
Philips Semiconductors
Product specification
VHF power amplifier modules
BGY135; BGY136
Test circuit information
pin
numbers
1
2
3
4
5
6
7
C1
C2
C5
C6
L1
L2
Z
1
Z
2
C3
C4
C7
C8
I
=
I
=
S2
typ. 2.5 A
S1
typ. 0.5 A
output
input
V
V
S2
S1
MRC273
Fig.13 Test circuit.
90
50
MLB068
Dimensions in mm.
Fig.14 Printed-circuit board layout.
1996 May 08
7
Philips Semiconductors
Product specification
VHF power amplifier modules
BGY135; BGY136
List of components (see Fig.13)
COMPONENT
C1, C5
DESCRIPTION
VALUE
CATALOGUE NO
multilayer chip capacitor
tantalum capacitor
1 nF
4822 590 06614
2022 001 00067
2222 852 47103
2222 852 47104
3122 108 20153
C2, C6
C3, C7
C4, C8
L1, L2
Z1, Z2
6.8 µF, 35 V
10 nF
multilayer chip capacitor
multilayer chip capacitor
1 turn 0.5 mm copper wire on ferrite coil
stripline; note 1
100 nF
1 µH
50 Ω
Note
1. The striplines are on a double copper-clad printed-circuit board, with epoxy dielectric (εr = 4.7), thickness 1⁄16 inch.
1996 May 08
8
Philips Semiconductors
Product specification
VHF power amplifier modules
BGY135; BGY136
PACKAGE OUTLINE
52.5
50.0
44.9
17.0
14.4
8.1
9.3
6.8
3.7
0.25
4.2
7.65
max
7
6
1 2 3 4
5
19.7
3.3
61.0
A
8.5
17.0 3.5
0.5
0.2 M A
52.5
67.5
MBC876
Dimensions in mm.
Fig.15 SOT132B.
1996 May 08
9
Philips Semiconductors
Product specification
VHF power amplifier modules
BGY135; BGY136
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 08
10
相关型号：
BGY148BTRAY
RF/Microwave Amplifier, 430 MHz - 488 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
NXP
©2020 ICPDF网 联系我们和版权申明