BGY288_技术文档

BGY288

Power ampliﬁer with integrated control loop for GSM850,

EGSM900, DCS1800 and PCS1900

Rev. 01 — 2 February 2005

Preliminary data sheet

1. Product proﬁle

1.1 General description

The BGY288 is a power ampliﬁer module in a SOT775 surface mounted package with a

plastic cap. In the module, a mix of state of the art technologies as InGaP, Si-Bicmos and

Si passive integration are used to combine high performance with a small size. The

module comprises two functional sections, one for low-band (GSM850/EGSM900) and

one for high-band (DCS1800/PCS1900) with internal power detection, power control loop,

input and output matching; see Figure 2. The power control circuit ensures a stable RF

power output which is set by the voltage level on pin PC. The power control circuit is

stabilized to compensate for variations in supply voltage, input power and temperature,

and has a control range fully compliant with European Telecommunication Standards

Institute (ETSI) time mask and power spectrum requirements.

1.2 Features

1.2.1 General features

■ Quad band GSM ampliﬁer

■ 34 dBm controlled output power for

GSM850/EGSM900

■ Very small size (8 mm × 8 mm)

■ 32.5 dBm controlled output power for

DCS1800/PCS1900

■ Suited for GPRS class 12

(duty cycle δ = 4 : 8)

■ Easy on/off and band select by digital

control voltage

■ Integrated power control loop

■ 3.6 V nominal supply voltage

■ Internal input and output matching

■ Speciﬁcation based on 3GPP TS 45.005

1.2.2 RF performance

RF performance with a typical pulsed, controlled output power at T_mb= 25 °C;

V_BAT= 3.6 V; V_STAB= 2.8 V; Z_S= Z_L= 50 Ω; P_D(LB)= 2 dBm / P_D(HB)= 0 dBm; δ = 2 : 8.

■ f = 824 MHz to 849 MHz; η @ P_SAT= 50 %; P_L= 34 dBm

■ f = 880 MHz to 915 MHz; η @ P_SAT= 55 %; P_L= 34 dBm

■ f = 1710 MHz to 1785 MHz; η @ P_SAT= 50 %; P_L= 32.5 dBm

■ f = 1850 MHz to 1910 MHz; η @ P_SAT= 50 %; P_L= 32.5 dBm

1.3 Applications

■ Digital cellular radio systems with Time Division Multiple Access (TDMA) operation

(GSM systems) in four frequency bands: 824 MHz to 849 MHz, 880 MHz to 915 MHz,

1710 MHz to 1785 MHz and 1850 MHz to 1910 MHz.

BGY288

Philips Semiconductors

Power ampliﬁer with integrated control loop

2. Pinning information

2.1 Pinning

1

16

15

14

13

GND

V

2

3

12

11

V

BAT

RFI_HB

TXON

4

5

10

9

RFI_LB

n.c.

6

7

8

001aac028

Transparent top view

Fig 1. Pin conﬁguration

2.2 Pin description

Table 1:

Symbol

GND

Pin description

Type

Description

1, 13, 15

ground

supply

ground

[1]

V_BAT

2, 3

battery supply voltage for DCS1800/PCS1900 section

battery supply voltage for GSM850/EGSM900 section

DCS1800/PCS1900 transmit RF input

RF power control enable input

11, 12

RFI_HB

TXON

PC

4

5

6

7

8

analog input

logic input

analog input

supply

RF power control input

V_STAB

BAND

stabilized supply voltage

logic input

Low-Band (LB) (GSM850/EGSM900) or High-Band

(HB) (DCS1800/PCS1900) select input

n.c.

9

not connected

RFI_LB

RFO_LB

RFO_HB

10

14

16

analog input

GSM850/EGSM900 transmit RF input

analog output GSM850/EGSM900 transmit RF output

analog output DCS1800/PCS1900 transmit RF output

inner pads ground

ground

[1] Pins 2, 3, 11 and 12 (V_BAT) are not internally connected and must all be connected to the battery supply

voltage.

9397 750 14011

Preliminary data sheet

Rev. 01 — 2 February 2005

2 of 22

BGY288

Philips Semiconductors

Power ampliﬁer with integrated control loop

3. Ordering information

Table 2:

Ordering information

Type number

Package

Name

-

Description

Version

BGY288

leadless surface mounted package; plastic cap;

16 terminations

SOT775A

4. Block diagram

850 MHz and 900 MHz POWER AMPLIFIER

10

14

OUTPUT

MATCHING

RFI_LB

RFO_LB

POWER

BIASING

SENSE

POWER CONTROLLER

6

PC

7

5

V

STAB

TXON

BGY288

LOGIC

CONTROL

(1)

8

4

BAND

POWER

SENSE

BIASING

16

OUTPUT

MATCHING

RFI_HB

RFO_HB

1800 MHz and 1900 MHz POWER AMPLIFIER

001aab846

(1) Pull-down resistor.

Fig 2. Block diagram

9397 750 14011

Preliminary data sheet

Rev. 01 — 2 February 2005

3 of 22

BGY288

Philips Semiconductors

Power ampliﬁer with integrated control loop

5. Functional description

5.1 Operating conditions

The BGY288 is designed to meet the 3GPP TS 45.005 technical speciﬁcation for the

ETSI.

5.2 Power ampliﬁer

The low band (GSM850 and EGSM900) and the high band (DCS1800 and PCS1900)

channel power ampliﬁers each comprises three cascaded gain stages, input and output

matching and harmonic ﬁlters. The output power of each ampliﬁer is determined by the

bias on each of its 3 gain stages and is controlled by an internal signal generated in the

power controller block. Each power ampliﬁer block generates a power sense signal which

is routed internally to the power control block.

5.3 Control logic

The control logic block generates the various signals to control the complete BGY288

depending on the signal levels on pins TXON and BAND, as indicated in Table 3. The

control logic block supply voltage is via pin V_STAB. When pin V_STAB= 0 V, the BGY288 is in

Idle mode and the battery current consumption is almost zero. The power control block is

enabled when pin TXON goes HIGH. The low band (GSM850/EGSM900) channel is

enabled when pin BAND goes LOW and the high band (DCS1800/PCS1900) channel is

enabled when pin BAND goes HIGH. Both TXON and BAND inputs have pull-down

resistors of approximately 1 MΩ.

5.4 Power controller

The main inputs to the power controller block are the RF power control signal via pin PC

and the output power sense signal internally generated by each power ampliﬁer block.

The PC signal is the reference voltage for the requested level of output power, and is

usually generated by an external digital-to-analog converter. The PC signal is buffered

and compared with the output power sense signal. The resultant error signal is then

ampliﬁed by one of two integrators, the selection of which being dependant on the level of

the BAND signal. The output of the selected integrator is the internal signal which controls

the biasing circuits of the selected channel.

5.5 Mode control

Table 3:

Mode

Mode control

Mode description

V_STAB

(V)

TXON BAND

LOW LOW

PC (V)

Idle

power ampliﬁer fully off; minimal leakage current

0

< 0.15

Standby control logic functioning; power ampliﬁer off

2.6 to 3 LOW

HIGH or < 0.15

LOW

LB TX

HB TX

low-band transmit mode (GSM850/EGSM900)

2.6 to 3 HIGH LOW

< 2.5

high-band transmit mode (DCS1800/PCS1900) 2.6 to 3 HIGH HIGH

9397 750 14011

Preliminary data sheet

Rev. 01 — 2 February 2005

4 of 22

BGY288

Philips Semiconductors

Power ampliﬁer with integrated control loop

6. Timing

dB

+4

+1

−1

−6

P

, P

L(LB) L(HB)

(**)

−30

(***)

(147 bits)

(*)

10 µs 8 µs 10 µs

t

7056/13 (542.8) µs

V

STAB

t

d6

d1

TXON

BAND

t

d5

d4

t

d2

d7

P

, P

D(LB) D(HB)

t

d8

d3

PC

001aab847

t

d9

Fig 3. Timing diagram

Table 4:

Z_S= Z_L= 50 Ω; P_D(LB)= 0 dBm to 4 dBm / P_D(HB)= −2 dBm to +2 dBm; V_BAT= 3.1 V to 4.6 V;

_STAB= 2.6 V to 3.0 V; T_mb= −20 °C to 85 °C; δ = 1 : 8 to 4 : 8; unless otherwise speciﬁed.

Timing characteristics

V

Symbol Parameter Min Typ Max Unit

t_d1

t_d2

t_d3

delay time; V_STABto high voltage before TXON goes HIGH

0

-

µs

delay time; BAND to LOW or HIGH before TXON goes HIGH 0

delay time; RF signal on RFI_HB or RFI_LB before PC

ramp-up

0

t_d4

t_d5

delay time; PC start of ramp-up after TXON goes HIGH

10

0

-

µs

delay time; TXON to LOW after transition of PC to off

condition

t_d6

t_d7

t_d8

delay time; V_STABto 0 V, after TXON goes LOW

delay time; change of BAND after TXON goes LOW

10

0

-

µs

delay time; removal of RF signal on RFI_HB or RFI_LB after

transition of PC to off condition

0

t_d9

time between PC ramp-up and actual P_Lincrease

-

3

µs

9397 750 14011

Preliminary data sheet

Rev. 01 — 2 February 2005

5 of 22

BGY288

Philips Semiconductors

6.1 Ramp-up

Power ampliﬁer with integrated control loop

V_STABvoltage must be available at minimum t_d1before TXON goes HIGH (power control

loop activates).

BAND selects the correct transmit channel (GSM850/EGSM900, or DCS1800/PCS1900).

BAND must be at the correct value before the rising edge of TXON.

The transition of TXON to HIGH enables the power control loop; the TXON minimum t_d4

period is a set-up time which allows the correct internal biasing conditions and the charge

on the integration capacitors to be at the correct starting value before PC starts to

increase. RF power must be present at the input of the selected channel (P_D(LB)or P_D(HB)

before PC starts to ramp-up.

)

The required RF output power level is reached by increasing PC in steps to the

corresponding voltage level. The sequence of PC steps can be chosen to have

approximately a quarter cosine wave ramp-up of P_L(LB)or P_L(HB)in order to prevent

violation of the GSM power mask, and at the same time prevent violation of the spectrum

due to transients.

To avoid violation of the lowest power level in the GSM power mask (indicated by *;

see Figure 3), the BGY288 provides sufﬁcient isolation when TXON goes HIGH with PC

at minimum value and RF power at input of power ampliﬁer.

In LB TX mode, the system speciﬁcation for maximum output power of the handset is

−36 dBm. In HB TX mode, the system speciﬁcation for maximum output power of the

handset is −48 dBm. In BGY288 transmit mode, the handset antenna switch can be used

to provide isolation between the power ampliﬁer and the antenna by setting the antenna

switch to Rx mode. This condition is used for the transmit mode isolation parameters

given in Section 9.

6.2 Ramp-down

PC steps down from the voltage level for the current power level to off state. The

sequence of PC steps can be chosen to have approximately a quarter cosine wave

ramp-down of P_L(LB)or P_L(HB)in order to prevent violation of the GSM power mask, and at

the same time prevent violation of the spectrum due to transients.

The power control loop can be switched off (TXON goes LOW) as soon as PC has

reached the off state level. At the same time, BAND is allowed to change polarity and the

RF input power at the selected channel (P_D(LB)or P_D(HB)) can be removed. When input

power is removed, there is no additional isolation speciﬁcation required to meet the GSM

system speciﬁcation. In LB TX mode, the system speciﬁcation for maximum output power

of the handset is −54 dBm. In HB TX mode the system speciﬁcation for maximum output

power is −48 dBm.

At minimum t_d6after TXON goes LOW (power control loop deactivates) and when all

charge in the power control loop capacitors is removed, the BGY288 can go into Idle

mode (V_STAB= 0 V).

9397 750 14011

Preliminary data sheet

Rev. 01 — 2 February 2005

6 of 22

BGY288

Philips Semiconductors

Power ampliﬁer with integrated control loop

7. Limiting values

Table 5:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

7

Unit

V

V_BAT

DC supply voltage

Idle mode

-

HB TX or LB TX mode

-

5.3

+3.3

2

V

V_STAB

I_STAB

V_PC

stabilized DC supply voltage

stabilized supply current

−0.5

V

-

mA

V

DC output power control voltage

current into output power control input

-

3

I_PC

−2

+2

mA

dBm

V

P_D(HB), P_D(LB)input drive power on RFI_HB or RFI_LB

-

10

P_L(LB)

P_L(HB)

V_BAND

I_BAND

V_TXON

I_TXON

P_BAT

load power on RFO_LB

load power on RFO_HB

band switch voltage

-

37

-

35

−0.5

+3.3

+2

band switch current

−2

mA

V

transmit control signal

−0.5

+3.3

+2

current into transmit control input

power from supply during pulse

−2

mA

W

HB TX mode

LB TX mode

HB TX mode

LB TX mode

-

4

-

7

W

I_BAT

current from supply during pulse

-

1.6

2.2

+100

+90

±500

±50

A

-

A

T_stg

T_mb

storage temperature

−40

−30

-

°C

V

mounting base temperature

δ = 2 : 8

δ = 4 : 8

[1]

[2]

V_esd

electrostatic discharge voltage

human body model

machine model

-

V

[1] Class 1B according to EIA/JESD22-A114B

[2] Class A according to EIA/JESD22-A115A

8. Static characteristics

Table 6:

Static characteristics

Z_S= Z_L= 50 Ω; P_D(HB), P_D(LB)= 0 mW; V_BAT= 3.6 V; V_STAB= 2.8 V; T_mb= 25 °C; unless otherwise speciﬁed.

Symbol Parameter

Voltage supply

Conditions

Min

Typ

Max

Unit

[1]

[2]

V_BAT

battery supply voltage

2.9

3.1

4.6

-

3.1

4.6

5.2

1.5

10

V

typical operating range

3.6

V

-

V

I_BAT

leakage current

supply voltage

Standby mode

-

mA

µA

V

Idle mode

-

V_STAB

Standby, HB TX or LB TX mode

Idle mode

2.6

0

2.8

-

3.0

0.2

V

9397 750 14011

Preliminary data sheet

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BGY288

Philips Semiconductors

Power ampliﬁer with integrated control loop

Table 6:

Static characteristics …continued

Z_S= Z_L= 50 Ω; P_D(HB), P_D(LB)= 0 mW; V_BAT= 3.6 V; V_STAB= 2.8 V; T_mb= 25 °C; unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

1

Unit

mA

I_STAB

current consumption

HB TX or LB TX mode

Standby mode

-

1

Digital inputs: TXON, BAND^[3]

V_IL

V_IH

I_IL

LOW-level input voltage

HIGH-level input voltage

LOW-level input current

HIGH-level input current

input capacitance

0

-

0.5

3

V

1.4

-

V

-

3

µA

pF

I_IH

-

15

-

C_i

4

Analog inputs: PC^[3]

V_PC

I_PC

power control voltage

0

-

2.5

V

power control current

PC input capacitance

PC input resistance

−100

-

µA

pF

MΩ

C_PC

R_PC

-

4

1.2

[1] Power ampliﬁer is functional from 2.9 V to 3.1 V, but will not meet all electrical speciﬁcation points.

[2] Power ampliﬁer is functional from 4.6 V to 5.2 V under 50 Ω conditions, but will not meet all electrical speciﬁcation points.

[3] P_D(LB)= 0 dBm to 4 dBm / P_D(HB)= −2 dBm to +2 dBm; V_BAT= 3.1 V to 4.6 V; V_STAB= 2.6 V to 3.0 V; T_mb= −20 °C to +85 °C;

δ = 1 : 8 to 4 : 8; unless otherwise speciﬁed.

9. Dynamic characteristics

Table 7:

Dynamic characteristics GSM850 and EGSM900 transmit mode

Z_S= Z_L= 50 Ω; V_BAT= 3.6 V; V_STAB= 2.8 V; T_mb= 25 °C; δ = 1 : 8 to 4 : 8; t_p= 575 µs to 2300 µs; P_D(LB)= 2 dBm; spurious

signals on P_D(LB)< −50 dBm; LB TX mode selected;

f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; unless otherwise speciﬁed.

Symbol

P_D(LB)

V_PC

Parameter

Conditions

Min

Typ

Max Unit

RF input power

0

-

2

-

4

2

dBm

V

reference voltage to set

output power

f = 897.5 MHz for EGSM900;

f = 836.5 MHz for GSM850;

P_L(LB)= 35 dBm

f = 897.5 MHz for EGSM900;

f = 836.5 MHz for GSM850;

0.2

-

V

P_L(LB)= 3 dBm

9397 750 14011

Preliminary data sheet

Rev. 01 — 2 February 2005

8 of 22

BGY288

Philips Semiconductors

Power ampliﬁer with integrated control loop

Table 7:

Dynamic characteristics GSM850 and EGSM900 transmit mode …continued

Z_S= Z_L= 50 Ω; V_BAT= 3.6 V; V_STAB= 2.8 V; T_mb= 25 °C; δ = 1 : 8 to 4 : 8; t_p= 575 µs to 2300 µs; P_D(LB)= 2 dBm; spurious

signals on P_D(LB)< −50 dBm; LB TX mode selected;

f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

P_L(LB)

available output power

GSM850

V_PC= 2.2 V

34.2 35

-

dBm

V_PC= 2.0 V; V_BAT= 3.2 V;

32.8

-

P

_D(LB)= 0 dBm; δ = 2 : 8

V_PC= 2.0 V; V_BAT= 3.2 V;

_D(LB)= 0 dBm; δ = 2 : 8; T_mb= 85 °C

32.3

-

dBm

P

EGSM900

V_PC= 2.2 V

35.2 36

-

dBm

V_PC= 2.0 V; V_BAT= 3.2 V;

33.8

-

P

_D(LB)= 0 dBm; δ = 2 : 8

V_PC= 2.0 V; V_BAT= 3.2 V;

_D(LB)= 0 dBm; δ = 2 : 8; T_mb= 85 °C

33.3

-

dBm

P

η

efﬁciency GSM850

saturated power

-

50

45

55

50

-

%

P_L(LB)= 34 dBm

-

efﬁciency EGSM900

output power variation at

saturated power

-

P_L(LB)= 34 dBm

-

[1] [2]

∆P_L(LB)

P_L(LB)= 31 dBm to 34 dBm for EGSM900

−0.7

+0.7 dB

nominal temperature range and P_L(LB)= 31 dBm to 33 dBm for

GSM850; set by PC

[1] [2]

[1] [3]

P

_L(LB)= 13 dBm to 31 dBm; set by PC

−1.5

−2

-

+1.5 dB

P_L(LB)= 6 dBm to 13 dBm; set by PC

+2

dB

output power variation at

P_L(LB)= 31 dBm to 34 dBm for EGSM900

−1.2

+1.2 dB

extreme temperature range and P_L(LB)= 31 dBm to 33 dBm for

GSM850; set by PC

[1] [3]

[1] [4]

P

_L(LB)= 13 dBm to 31 dBm; set by PC

−2

-

+2

+3

dB

P_L(LB)= 6 dBm to 13 dBm; set by PC

P_L(LB)= 31 dBm to 34 dBm; set by PC

−3

output power variation of

frequency

−0.3

+0.3 dB

H₂to H₁₃harmonics

P

_L(LB)≤ 34 dBm

-

−5

dBm

isolation H₂into

DCS1800/PCS1900

measured at RFO_HB; P_L(LB)= 34 dBm

−15

dBm

isolation H₃into

DCS1800/PCS1900

measured at RFO_HB; P_L(LB)= 34 dBm

-

−25

−36

6 : 1

isolation

P_D(LB)= 4 dBm; V_PC= 0.15 V; Standby

mode

P_D(LB)= 4 dBm; V_PC= 0.15 V; LB TX

mode

VSWR_in

input VSWR

P_L(LB)< 6 dBm

-

P_L(LB)= 6 dBm to 34 dBm;

2 : 1 3 : 1

9397 750 14011

Preliminary data sheet

Rev. 01 — 2 February 2005

9 of 22

BGY288

Philips Semiconductors

Power ampliﬁer with integrated control loop

Table 7:

Dynamic characteristics GSM850 and EGSM900 transmit mode …continued

Z_S= Z_L= 50 Ω; V_BAT= 3.6 V; V_STAB= 2.8 V; T_mb= 25 °C; δ = 1 : 8 to 4 : 8; t_p= 575 µs to 2300 µs; P_D(LB)= 2 dBm; spurious

signals on P_D(LB)< −50 dBm; LB TX mode selected;

f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

P_n

noise power

RBW = 100 kHz;

f₀= 897.5 MHz for EGSM900;

f₀= 836.5 MHz for GSM850

f₀+ 27.5 MHz; P_L(LB)< 34 dBm

f₀+ 37.5 MHz; P_L(LB)< 34 dBm

f ≥ 1805 MHz; P_L(LB)< 34 dBm

-

−73

−82

−77

28

dBm

dB

CG

conversion gain

small signal gain

AM/AM conversion

f₀= 915 MHz for EGSM900;

f₀= 849 MHz for GSM850;

P_L(LB)= 6 dBm to 34 dBm;

f_SS1= f₀− 20 MHz; P_SS1= −40 dBm;

CG = P_L(CON)− P_SS1; see Figure 4

SSG

AM/AM

f₀= 915 MHz for EGSM900;

f₀= 849 MHz for GSM850;

-

31

dB

P_L(LB)= 6 dBm to 34 dBm;

f_SS2= f₀+ 20 MHz; P_SS2= −40 dBm;

SSG = P_L(SS2)− P_SS2; see Figure 4

P_L(LB)= 6 dBm to 34 dBm;

6.5 % AM modulation with

f_mod= 67 kHz at RFI_LB

f_mod= 140 kHz at RFI_LB

f_mod= 271 kHz at RFI_LB

P_D(LB)= 1.5 dBm to 2.5 dBm;

-

5

8

%

8

13

20

4

%

14

2

%

AM/PM

AM/PM conversion

deg/dB

P_L(LB)= 6 dBm to 34 dBm

maximum control slope

carrier rise and fall time

P_L(LB)= 6 dBm to 34 dBm

-

200

2

dB/V

t_r, t_f

f_CL

P_L(LB)= 5 dBm to 34 dBm or

34 dBm to 5 dBm

µs

control loop bandwidth

stability

-

200

-

kHz

P

_L(LB)≤ 34 dBm; VSWR ≤ 7 : 1 through all

−36

dBm

phases; V_BAT= 3.2 V to 4.6 V

ruggedness

V_BAT= 3.2 V to 4.6 V; P_L(LB)≤ 34 dBm;

δ = 4 : 8; VSWR ≤ 8 : 1 through all phases

no degradation

[1] Condition to set V_PC: V_BAT= 3.6 V; δ = 2 : 8; P_D(LB)= 2 dBm; T_mb= 25 °C; f = 897.5 MHz for EGSM900; f = 836.5 MHz for GSM850.

[2] Conditions for power variation: P_D(LB)= 0 dBm to 4 dBm; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900;

T_mb= 15 °C to 70 °C; V_BAT= 3.2 V to 4.2 V; V_STAB= 2.8 V ± 20 mV.

[3] Conditions for power variation: P_D(LB)= 0 dBm to 4 dBm; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900;

T_mb= −20 °C to +90 °C; V_BAT= 3.2 V to 4.2 V; V_STAB= 2.8 V ± 20 mV.

[4] Conditions for power variation: P_D(LB)= 2 dBm; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900;

T_mb= 25 °C; V_BAT= 3.6 V; V_STAB= 2.8 V ± 20 mV.

9397 750 14011

Preliminary data sheet

Rev. 01 — 2 February 2005

10 of 22

BGY288

Philips Semiconductors

Power ampliﬁer with integrated control loop

Table 8:

Dynamic characteristics DCS1800/PCS1900 transmit mode

Z_S= Z_L= 50 Ω; V_BAT= 3.6 V; V_STAB= 2.8 V; T_mb= 25 °C; δ = 1 : 8 to 4 : 8; t_p= 575 µs to 2300 µs; P_D(HB)= 0 dBm; spurious

signals on P_D(HB)< −50 dBm; HB TX mode selected;

f = 1710 MHz to 1785 MHz for DCS1800; f = 1850 MHz to 1910 MHz for PCS1900; unless otherwise speciﬁed.

Symbol

P_D(HB)

V_PC

Parameter

Conditions

Min

−2

-

Typ

Max Unit

RF input power

0

-

+2

2

dBm

V

reference voltage to set

output power

f = 1747.6 MHz for DCS1800;

f = 1880 MHz for PCS1900;

P_L(HB)= 32.5 dBm

f = 1747.6 MHz for DCS1800;

f = 1880 MHz for PCS1900;

0.2

-

V

P_L(HB)= −3 dBm

P_L(HB)

available output power

V_PC= 2.2 V

32.7 33.5

-

dBm

V_PC= 2.0 V; V_BAT= 3.2 V;

31.8

-

P

_D(HB)= −2 dBm; δ = 2 : 8

V_PC= 2.0 V; V_BAT= 3.2 V;

_D(HB)= −2 dBm; δ = 2 : 8; T_mb= 85 °C

31.3

-

dBm

P

η

efﬁciency DCS1800

efﬁciency PCS1900

saturated power

-

50

45

50

45

-

%

P_L(HB)= 31.3 dBm

-

saturated power

-

P_L(HB)= 31.3 dBm

-

[1] [2]

[1] [3]

[1] [4]

∆P_L(HB)

output power variation at

nominal temperature range

P_L(HB)= 28 dBm to 32 dBm; set by PC

P_L(HB)= 15 dBm to 28 dBm; set by PC

P_L(HB)= 5 dBm to 15 dBm; set by PC

P_L(HB)= 0 dBm to 5 dBm; set by PC

P_L(HB)= 28 dBm to 32 dBm; set by PC

P_L(HB)= 15 dBm to 28 dBm; set by PC

P_L(HB)= 5 dBm to 15 dBm; set by PC

P_L(HB)= 0 dBm to 5 dBm; set by PC

P_L(HB)= 30 dBm to 32 dBm; set by PC

−0.7

−1

+0.7 dB

-

+1

+2

+3

dB

−2

-

−3

-

output power variation at

extreme temperature range

−1.2

−1.5

−2.5

−3.5

−0.3

-

+1.2 dB

+1.5 dB

+2.5 dB

+3.5 dB

+0.3 dB

-

output power variation of

frequency

-

H₂to H₇

harmonics

isolation

P

_L(HB)≤ 32 dBm

-

−5

dBm

P_D(HB)= 2 dBm; V_PC= 0.15 V; Standby

mode

−36

dBm

P_D(HB)= 2 dBm; V_PC= 0.15 V; HB TX

mode

-

−36

dBm

VSWR_in

P_n

input VSWR

noise power

P_L(HB)< 0 dBm

-

6 : 1

P_L(LB)= 2 dBm to 32 dBm

2 : 1 3 : 1

f₀= 1785 MHz for DCS1800;

f₀= 1910 MHz for PCS1900; f₀+ 20 MHz;

RBW = 100 kHz; P_L(HB)< 32 dBm

-

−77

dBm

dB

CG

conversion gain

f₀= 1785 MHz for DCS1800;

f₀= 1910 MHz for PCS1900;

-

25

P_L(HB)= 0 dBm to 32 dBm;

f_SS1= f₀− 20 MHz; P_SS1= −40 dBm;

CG = P_L(CON)− P_SS1; see Figure 4

9397 750 14011

Preliminary data sheet

Rev. 01 — 2 February 2005

11 of 22

BGY288

Philips Semiconductors

Power ampliﬁer with integrated control loop

Table 8:

Dynamic characteristics DCS1800/PCS1900 transmit mode …continued

Z_S= Z_L= 50 Ω; V_BAT= 3.6 V; V_STAB= 2.8 V; T_mb= 25 °C; δ = 1 : 8 to 4 : 8; t_p= 575 µs to 2300 µs; P_D(HB)= 0 dBm; spurious

signals on P_D(HB)< −50 dBm; HB TX mode selected;

f = 1710 MHz to 1785 MHz for DCS1800; f = 1850 MHz to 1910 MHz for PCS1900; unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

SSG

small signal gain

f₀= 1785 MHz for DCS1800;

f₀= 1910 MHz for PCS1900;

-

33

dB

P_L(HB)= 0 dBm to 32 dBm;

f_SS2= f₀+ 20 MHz; P_SS2= −40 dBm;

SSG = P_L(SS2)− P_SS2; see Figure 4

AM/AM

AM/PM

AM/AM conversion

AM/PM conversion

P_L(HB)= 0 dBm to 32 dBm;

6.5 % AM modulation with

f_mod= 67 kHz at RFI_HB

f_mod= 140 kHz at RFI_HB

f_mod= 271 kHz at RFI_HB

P_D(HB)= −0.5 dBm to +0.5 dBm;

-

5

8

%

8

13

20

4

%

14

2

%

deg/dB

P_L(HB)= 0 dBm to 32 dBm

maximum control slope

carrier rise and fall time

P_L(HB)= 0 dBm to 32 dBm

-

200

2

dB/V

t_r, t_f

f_CL

P_L(HB)from 0 dBm to 32 dBm and

from 32 dBm to 0 dBm

µs

control loop bandwidth

stability

-

200

-

kHz

P

_L(HB)≤ 32 dBm; VSWR ≤ 7 : 1 through all

−36

dBm

phases; V_BAT= 3.2 V to 4.6 V

ruggedness

V_BAT= 3.2 V to 4.6 V; P_L(HB)≤ 32 dBm;

δ = 4 : 8; VSWR ≤ 8 : 1 through all phases

no degradation

[1] Condition to set V_PC: V_BAT= 3.6 V; δ = 2 : 8; P_D(HB)= 0 dBm; T_mb= 25 °C; f = 1747.6 MHz for DCS1800; f = 1880 MHz for PCS1900.

[2] Conditions for power variation: P_D(HB)= −2 dBm to +2 dBm; f = 1710 MHz to 1785 MHz for DCS1800;

f = 1850 MHz to 1910 MHz for PCS1900; T_mb= 15 °C to 70 °C; V_BAT= 3.2 V to 4.2 V; V_STAB= 2.8 V ± 20 mV.

[3] Conditions for power variation: P_D(HB)= −2 dBm to +2 dBm; f = 1710 MHz to 1785 MHz for DCS1800;

f = 1850 MHz to 1910 MHz for PCS1900; T_mb= −20 °C to +90 °C; V_BAT= 3.2 V to 4.2 V; V_STAB= 2.8 V ± 20 mV.

[4] Conditions for power variation: P_D(HB)= 0 dBm; f = 1710 MHz to 1785 MHz for DCS1800; f = 1850 MHz to 1910 MHz for PCS1900;

T_mb= 25 °C; V_BAT= 3.6 V; V_STAB= 2.8 V ± 20 mV.

9397 750 14011

Preliminary data sheet

Rev. 01 — 2 February 2005

12 of 22

BGY288

Philips Semiconductors

Power ampliﬁer with integrated control loop

P

L

P

D

POWER

AMP

P

L(SS1)

P

L(CON)

P

f

SS1

f

2f − f

0 SS1

f

SS1

0

SS1

0

CG = P

− P

SS1

L(CON)

001aaa701

a. Conversion gain (CG)

P

L

P

D

POWER

AMP

P

L(SS2)

P

f

SS2

f

0

SS2

0

SS2

SSG = P

− P

SS2

L(SS2)

001aaa702

b. Small signal gain (SSG)

The total noise at the output of the power ampliﬁer is the summation of three sources:

The noise present at the input of the power ampliﬁer at f_SS1ampliﬁed by the conversion gain.

The noise present at the input of the power ampliﬁer at f_SS2ampliﬁed by the small signal gain.

The noise generated by the power ampliﬁer itself, when the noise at the input of the power

ampliﬁer is zero.

Fig 4. Input and output signals

9397 750 14011

Preliminary data sheet

Rev. 01 — 2 February 2005

13 of 22

BGY288

Philips Semiconductors

Power ampliﬁer with integrated control loop

10. Application information

V

BAT

C10

C3

C2

C4

C5

L1

RFI_HB

2

1

4

3

R1

R2

L3

L4

5

6

16

RFO_HB

TXON

PC

15

C1

BGY288

R3

R4

14

13

RFO_LB

7

8

V

STAB

BAND

9

10 11

12

001aab848

L2

RFI_LB

C6

C8

C7

C9

C11

V

BAT

Drive signals must not be applied to pin 9.

Components listed in Table 9.

Fig 5. Test circuit

9397 750 14011

Preliminary data sheet

Rev. 01 — 2 February 2005

14 of 22

BGY288

Philips Semiconductors

Power ampliﬁer with integrated control loop

V

BAT

C10

CON1

CON3

C2

C3

RFI_HB

RFO_HB

C4 C5

BGY288

R1

R2

R3

R4

R5

C1

CON5

C6 C7

C8 C9

CON2

CON4

RFI_LB

RFO_LB

C11

V

BAT

001aab849

CON6

Components listed in Table 9.

Fig 6. Printed-circuit board test circuit

Table 9: List of components

Component

Description

Value

PB005H1

Dimensions

Supplier

PCB

printed-circuit board

Roland Haefele

Johnson Components

CON1, CON2,

CON3, CON4

jack assembly end launch

SMA connector

142-0701-881

CON5

DC connector 5 pin

solder ring

CON6

C1

SMD capacitor

electrolytic capacitor^[1]

SMD resistor

2.7 nF

0603 size

0805 size

0603 size

C2, C3, C8, C9

C4, C5

100 nF

10 pF

C6, C7

33 pF

C10, C11

R1, R3, R4, R5

R2

47 µF; 35 V

0 Ω

Matsushita

0605 size

SMD resistor

stripline^[2]

1 kΩ; 0.1 W

Z₀= 50 Ω

0603 size

L1, L2, L3, L4

width 1.4 mm

[1] C10 and C11 smooth the DC supply voltage (V_BAT).

[2] The striplines are on a double etched printed-circuit board (ε_r= 4.6); thickness 0.8 mm.

9397 750 14011

Preliminary data sheet

Rev. 01 — 2 February 2005

15 of 22

BGY288

Philips Semiconductors

Power ampliﬁer with integrated control loop

11. Package outline

Leadless surface mounted package; plastic cap; 16 terminations

SOT775A

Z

(10×)

Z

(10×)

D1

D2

e

(2×)

e

Z (8×)

2

1

(2×) (12×)

Z

3

1

2

3

4

5

Z

(10×)

Z

(10×)

E1

E2

Z

4

16

15

14

6

7

8

Z

2

L (16×)

Z

(36×)

6

13

(2×)

12

11

10

9

Z

(36×)

b

b (14×)

5

1

Z

1

D

Dimensions solder resist

D

1

A

y

c

E

1

pin 1 index

0

5

10 mm

Z

E2

5

6

D1

D2

E1

scale

0.6

0.3

0.6

0.3

0.6

DIMENSIONS (mm are the original dimensions)

A

y

Z

3

Z

4

b

c

D

E

1

e

2

L

Z

1

Z

2

UNIT

1

max.

8.2

7.8

7.95

7.65

8.2

7.8

7.95

7.65

mm

1.6

0.6

0.9

0.56

1.55

1.7

1.85

0.6

0.1

0.9

1

1.2

1.7

1.6

Note

1. General tolerance ±0.050 mm, unless specified otherwise.

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

JEITA

03-10-10

SOT775A

Fig 7. Package outline SOT775A

9397 750 14011

Preliminary data sheet

Rev. 01 — 2 February 2005

16 of 22

BGY288

Philips Semiconductors

Power ampliﬁer with integrated control loop

12. Soldering Recommendations

12.1 Reﬂow proﬁle

The BGY288 is a laminate-based power ampliﬁer module in a Leadless Grid Array (LGA)

package. The module can be assembled using a standard Surface Mount Technology

(SMT) reﬂow process in a convection or IR-oven. The minimum and maximum limits of the

temperature proﬁle are shown in Figure 8. The actual proﬁle has to be within these limits,

and will depend on the printed-circuit board material, the number and size of the

components to be assembled, and the type of solder which is being used.

temperature

T

P

T

R

T

E(max)

T

E(min)

α

β

t

R

E

001aaa705

Fig 8. Recommended reﬂow temperature proﬁle

It is recommended to use a standard no-clean solder paste like SnPb for proﬁles having

leads containing solder, or SnAgCu for lead-free assembly processes. The parameters

and corresponding values for SnPb and SnAgCu solder are given in Table 10.

Table 10: Reﬂow soldering parameters

Symbol parameter

SnPb Solder

≤ 3

SnAgCu solder

≤ 3

Unit

°C/s

°C

α

temperature gradient

T_E

t_E

pre-heat (soak) temperature

pre-heat time

100 to 150

60 to 120

> 183

150 to 200

60 to 180

> 217

s

T_R

t_R

T_P

β

reﬂow temperature

°C

reﬂow time

60 to 150

240

60 to 150

260

s

maximum peak temperature

temperature gradient

time 25 °C to peak temperature

°C

< 5

°C/s

6 minutes max.

8 minutes max.

12.2 Printed-circuit board layout

The printed-circuit board footprint layout is a copy of the metal pattern on the underside of

the LGA package. It is recommended that the printed-circuit board is designed with a

large ground plane, and that the solder lands of the ground plane solder mask are deﬁned

as shown in Figure 9.

9397 750 14011

Preliminary data sheet

Rev. 01 — 2 February 2005

17 of 22

BGY288

Philips Semiconductors

Power ampliﬁer with integrated control loop

12.3 Stencil design

The recommended dimensions of the solder stencil are given in Figure 9 and are based

on a stencil thickness of 125 µm. Using a thinner or thicker stencil will require the stencil

aperture dimensions to be adjusted.

12.4 Rework

If rework is required, it is recommended that a BGA rework station with a programmable

top and bottom heater is used. The ﬁrst step of the rework process is to pre-heat the

printed-circuit board with the bottom heater of the rework station. When the board has

reached the pre-heat temperature, the top heater can be used to increase the

temperature above the melting point of the solder. The component which has to be

replaced can be picked up with a vacuum nozzle. Before placing a new component the

remaining solder on the board must be removed. Fresh solder can be dispensed, a new

component placed, and the board heated as described previously.

12.5 Moisture sensitivity level

The BGY288 is tested according to the JEDEC standard JESD 22-A113C. The BGY288 is

classiﬁed on MSL3 for a lead soldering proﬁle with a peak temperature of 240 °C, and on

MSL4 for a lead-free soldering proﬁle with a peak temperature of 260 °C.

9397 750 14011

Preliminary data sheet

Rev. 01 — 2 February 2005

18 of 22

BGY288

Philips Semiconductors

Power ampliﬁer with integrated control loop

7.40

1.10

0.80

B

0.60

0.90

0.60

A

C

0.60

1.10

0.60

7.40

5.40

0.30

solder lands

0.40

0.60

solder stencil opening

DIMENSIONS in mm

5.20

0.60

0.57

0.90

0.85

0.60

0.55

0.60 0.57

0.60 0.55

detail A

detail B

detail C

(14×)

(2×)

(36×)

mgx467

Fig 9. Footprint layout and solder stencil design

9397 750 14011

Preliminary data sheet

Rev. 01 — 2 February 2005

19 of 22

BGY288

Philips Semiconductors

Power ampliﬁer with integrated control loop

13. Revision history

Table 11: Revision history

Document ID

Release date Data sheet status

20050202 Preliminary data sheet

Change notice Doc. number

9397 750 14011

Supersedes

BGY288_1

-

9397 750 14011

Preliminary data sheet

Rev. 01 — 2 February 2005

20 of 22

BGY288

Philips Semiconductors

Power ampliﬁer with integrated control loop

14. Data sheet status

Level Data sheet status^[1]Product status^{[2] [3]}

Deﬁnition

I

Objective data

Development

This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II

Preliminary data

Qualiﬁcation

This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III

Product data

Production

This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

[1]

[2]

Please consult the most recently issued data sheet before initiating or completing a design.

The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3]

For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

15. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

ICs with GSM or 3G functionality — Purchase of a Philips IC with GSM

functionality does not convey an implied license under any patent right on the

GSM or 3G Standard. A license for the Philips portfolio of GSM and 3G

patents needs to be obtained via Philips Intellectual Property & Standards

(www.ip.philips.com), e-mail: info.licensing@philips.com.

16. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

17. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

9397 750 14011

Preliminary data sheet

Rev. 01 — 2 February 2005

21 of 22

BGY288

Philips Semiconductors

Power ampliﬁer with integrated control loop

18. Contents

1

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

General features. . . . . . . . . . . . . . . . . . . . . . . . 1

RF performance . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.2.1

1.2.2

1.3

2

2.1

2.2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2

3

4

Ordering information. . . . . . . . . . . . . . . . . . . . . 3

Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5

Functional description . . . . . . . . . . . . . . . . . . . 4

Operating conditions. . . . . . . . . . . . . . . . . . . . . 4

Power ampliﬁer . . . . . . . . . . . . . . . . . . . . . . . . . 4

Control logic . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Power controller . . . . . . . . . . . . . . . . . . . . . . . . 4

Mode control. . . . . . . . . . . . . . . . . . . . . . . . . . . 4

5.1

5.2

5.3

5.4

5.5

6

6.1

6.2

Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Ramp-up. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Ramp-down . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

7

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 7

Static characteristics. . . . . . . . . . . . . . . . . . . . . 7

Dynamic characteristics . . . . . . . . . . . . . . . . . . 8

Application information. . . . . . . . . . . . . . . . . . 14

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16

8

9

10

11

12

Soldering Recommendations . . . . . . . . . . . . . 17

Reﬂow proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . 17

Printed-circuit board layout. . . . . . . . . . . . . . . 17

Stencil design . . . . . . . . . . . . . . . . . . . . . . . . . 18

Rework . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Moisture sensitivity level . . . . . . . . . . . . . . . . . 18

12.1

12.2

12.3

12.4

12.5

13

14

15

16

17

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 20

Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 21

Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Contact information . . . . . . . . . . . . . . . . . . . . 21

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights.

Date of release: 2 February 2005

Document number: 9397 750 14011

Published in The Netherlands


型号：	BGY288
厂家：	NXP
描述：	Power amplifier with integrated control loop for GSM850, EGSM900, DCS1800 and PCS1900 功率放大器集成控制回路GSM850 ， EGSM900 ， DCS1800和PCS1900 放大器功率放大器过程控制系统分布式控制系统 PCS GSM DCS
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BGY288 [NXP]

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BGY47A