BGY925 [NXP]
UHF amplifier module; UHF放大器器模块
| 型号： | BGY925 |
| 厂家： | 
NXP |
| 描述： | UHF amplifier module |
| 文件： | 总12页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
BGY925
UHF amplifier module
Product specification
2000 Feb 02
Supersedes data of 1999 Dec 01
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
FEATURES
PINNING - SOT365A
PIN
• 26 V nominal supply voltage
DESCRIPTION
• 23 W output power into a load of 50 Ω with an RF drive
power of 36 mW.
1
RF input
VS1
2
3
4
VS2
APPLICATIONS
RF output
ground
• Base station transmitting equipment operating in the
920 to 960 MHz frequency range.
Flange
DESCRIPTION
handbook, halfpage
The BGY925 is a three-stage UHF amplifier module in a
SOT365A package. It consists of one NPN silicon planar
transistor die and two silicon MOSFET dies mounted on a
metallized ceramic AlN substrate, together with matching
and bias circuitry.
1
2
3
4
MSA447
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C.
η
(%)
(note 1)
MODE OF
OPERATION
f
VS1, VS2
(V)
PL
(W)
Gp
(dB)
ZS, ZL
(Ω)
(MHz)
CW
920 to 960
26
23
≥28
≥30
50
Note
1. At PL = 16 W.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VS1
VS2
PD
DC supply voltage
DC supply voltage
input drive power
load power
−
−
−
−
28
V
28
V
80
mW
W
PL
32
Tstg
Tmb
storage temperature
−30
−10
+100
+90
°C
°C
operating mounting-base temperature
2000 Feb 02
2
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
CHARACTERISTICS
ZS = ZL = 50 Ω; PL = 23 W; VS1 = VS2 = 26 V; Tmb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
920
TYP.
MAX.
960
UNIT
MHz
f
frequency range
supply current
supply current
load power
−
IS1
IS2
PL
Gp
−
50
500
−
−
mA
mA
W
PD < −60 dBm
−
−
23
28
28
30
−
−
power gain
160 mW ≤ PL < 2 W
2 W ≤ PL ≤ 23 W
PL = 16 W
30
30
−
34
32
−
dB
dB
%
η
efficiency
H2
second harmonic
third harmonic
input VSWR
stability
PL = 16 W
−
−35
−40
2:1
−60
dBc
dBc
H3
PL = 16 W
−
−
VSWRin
−
−
VSWR ≤ 3 : 1 through all phases;
S2 = 26 to 27 V; PL = 23 W
−
−
dBc
dBc
dBc
V
reverse intermodulation Pcarrier = 16 W; Pinterference = 1.6 µW;
fi = fc ± 600 kHz
−
−
−80
−55
−
−
direct intermodulation
Pcarrier = 16 W; Pinterference = 1.6 mW;
fi = fc + 270 kHz
NF
B
noise figure
8
dBc
AM bandwidth
corner frequency = 3 dB;
2
−
−
MHz
Pcarrier = 16 W; modulation = 20%
ruggedness
VSWR ≤ 5 : 1 through all phases;
no degradation
VS2 = 26 V; PL = 23 W
2000 Feb 02
3
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
MCD830
MCD831
35
60
handbook, halfpage
handbook, halfpage
920 MHz
G
p
(dB)
η
(%)
940 MHz
920 MHz
30
40
20
960 MHz
940 MHz 960 MHz
25
20
0
0
0
10
20
30
10
20
30
P
(W)
P
(W)
L
L
ZS = ZL = 50 Ω; VS1 = VS2 = 26 V; Tmb = 25 °C.
ZS = ZL = 50 Ω; VS1 = VS2 = 26 V; Tmb = 25 °C.
Fig.2 Power gain as a function of load power;
typical values.
Fig.3 Efficiency as a function of load power;
typical values.
MCD832
MCD833
35
3
handbook, halfpage
handbook, halfpage
G
p
I
S2
940 MHz 960 MHz
(dB)
(A)
30
2
920 MHz
25
20
1
0
−4
−2
2
−4
−2
2
10
10
1
10
10
10
1
10
P (W)
L
P
(W)
L
ZS = ZL = 50 Ω; VS1 = VS2 = 26 V; Tmb = 25 °C;
f = 920 to 960 MHz.
ZS = ZL = 50 Ω; VS1 = VS2 = 26 V; Tmb = 25 °C.
Fig.4 Power gain as a function of load power;
typical values.
Fig.5 Supply current as a function of load power;
typical values.
2000 Feb 02
4
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
MCD834
MCD835
35
0
handbook, halfpage
Return
handbook, halfpage
Losses
(dB)
G
p
−4
(dB)
30
−8
−12
−16
25
20
−20
800
800
900
1000
1100
900
1000
1100
f (MHz)
f (MHz)
ZS = ZL = 50 Ω; PD = −30 dBm; VS1 = VS2 = 26 V; Tmb = 25 °C.
ZS = ZL = 50 Ω; PD = −30 dBm; VS1 = VS2 = 26 V; Tmb = 25 °C.
Fig.6 Small signal in band power gain as a
function of frequency; typical values.
Fig.7 Small signal in band input return losses as
a function of frequency; typical values.
MCD836
MCD837
40
34
handbook, halfpage
G
handbook, halfpage
p
G
p
(dB)
(dB)
32
20
0
−20
−40
−60
(1)
30
28
(2)
(3)
(4)
(5)
(6)
(7)
20
26
24
−80
0
500
1000
1500
0
10
30
40
P
(W)
f (MHz)
L
ZS = ZL = 50 Ω; VS1 = VS2 = 26 V; Tmb = 25 °C.
(1) Tamb = −33°C.
(2) Tamb = −20°C.
(3) Tamb = 3°C.
(4) Tamb = 25°C.
(5) Tamb = 50°C.
(6) Tamb = 75°C.
(7) Tamb = 100°C.
ZS = ZL = 50 Ω; VS1 = VS2 = 26 V; PD = −30 dBm; Tmb = 25 °C.
Fig.8 Small signal out band power gain as a
function of frequency; typical values.
Fig.9 Power gain as a function of load power;
typical values
2000 Feb 02
5
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
MCD838
MCD839
50
0.5
handbook, halfpage
handbook, halfpage
η
I
S2
(%)
40
(A)
0.4
30
0.3
20
10
0
0.2
0.1
0
−50
−50
0
50
100
0
50
100
T
(°C)
T
(°C)
amb
amb
ZS = ZL = 50 Ω; PL = 16 W; VS1 = VS2 = 26 V.
ZS = ZL = 50 Ω; VS1 = VS2 = 26 V; PD = 0.
Fig.10 Efficiency as a function of ambient
temperature; typical values.
Fig.11 Quiescent current as a function of ambient
temperature; typical values.
MCD840
MCD841
40
34
handbook, halfpage
handbook, halfpage
G
p
P
L(−1db)
(W)
(dB)
32
30
30
20
10
28
26
24
0
−50
0
50
100
−50
0
50
100
T
(°C)
T
(°C)
amb
amb
ZS = ZL = 50 Ω; Pref = 5 W; VS1 = VS2 = 26 V.
ZS = ZL = 50 Ω; PL = 5 W; VS1 = VS2 = 26 V.
Fig.12 Load power at −1 dB gain as a function of
Fig.13 Power gain as a function of ambient
temperature; typical values.
ambient temperature; typical values.
2000 Feb 02
6
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
handbook, halfpage
pin
numbers
1
2
3
4
C3
C4
Z
Z
2
R1
L1
R2
L2
1
C1
C2
RF
input
V
V
RF
output
s1
s2
MGL161
Fig.14 Test circuit.
2000 Feb 02
7
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90
1
4
C4
C3
L1
L2
R1
R2
C1
C2
2
3
MGL162
Dimensions in mm.
Fig.15 Printed-circuit board component layout.
ahdnbok,uflapegwidt
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
List of components (See Figs 14 and 15)
COMPONENT
C1, C2
DESCRIPTION
VALUE
CATALOGUE NO.
electrolytic capacitor
10 µF; 35 V
C3, C4
L1, L2
R1, R2
Z1, Z2
multilayer ceramic chip capacitor
Grade 4S2 Ferroxcube bead
metal film resistor
100 nF; 50 V
4330 030 36300
2322 195 13109
10 Ω; 0.4 W
50 Ω
stripline; note 1
Note
1. The striplines are on a double copper-clad printed-circuit board with epoxy dielectric (εr = 4.5); thickness = 1 mm.
MOUNTING RECOMMENDATIONS
mounting-base; too little will also result in poor thermal
conduction.
To ensure a good thermal contact and to prevent
mechanical stress when bolted down, the flatness of the
mounting base is designed to be typically better than
0.1 mm. The mounting area of the heatsink should be flat
and free from burrs and loose particles. The heatsink
should be rigid and not prone to bowing under thermal
cycling conditions. The thickness of a solid heatsink
should be not less than 5 mm to ensure a rigid assembly.
The module should be mounted to the heatsink using
3 mm bolts with flat washers. The bolts should first be
tightened to “finger tight” and then further tightened in
alternating steps to a maximum torque of 0.4 to 0.6 Nm.
Once mounted on the heatsink, the module leads can be
soldered to the printed-circuit board. A soldering iron may
be used up to a temperature of 250 °C for a maximum of
10 seconds at a distance of 2 mm from the plastic cap.
A thin, even layer of thermal compound should be applied
between the mounting base and the heatsink to achieve
the best possible thermal contact resistance. Excessive
use of thermal compound will result in an increase in
thermal resistance and possible bowing of the
ESD precautions must be taken to protect the device from
electrostatic damage.
2000 Feb 02
9
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
PACKAGE OUTLINE
Plastic rectangular single-ended flat package; flange mounted; 2 mounting holes; 4 in-line leads
SOT365A
D
A
F
y
U
q
A
U
2
p
U
1
E
L
1
2
3
4
b
p
w
M
v
c
A
e
e
e
Z
Q
1
0
10
20 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
c
D
E
e
e
F
L
p
Q
q
U
U
U
v
w
y
Z
p
1
1
2
9.5 0.56
9.0 0.46
4.0
3.8
0.3 30.1 18.6
0.2 29.9 18.4
3.25 6.5
3.15 6.1
4.1
3.9
40.74 48.0 15.4 7.75
40.54 48.4 15.2 7.55
12.8
12.6
mm
2.54 17.78
0.3 0.25 0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT365A
99-02-06
2000 Feb 02
10
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Feb 02
11
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69
SCA
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603516/04/pp12
Date of release: 2000 Feb 02
Document order number: 9397 750 06749
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