BLA6G1011-200R,112 [NXP]
BLA6G1011-200R;型号: | BLA6G1011-200R,112 |
厂家: | NXP |
描述: | BLA6G1011-200R |
文件: | 总13页 (文件大小:372K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BLA6G1011-200R;
BLA6G1011L(S)-200RG
Power LDMOS transistor
Rev. 4 — 9 November 2011
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to
1090 MHz.
Table 1.
Test information
Typical RF performance at Tcase = 25 C.
Test signal
f
VDS
(V)
PL
Gp
D
tr
tf
(MHz)
(W)
(dB)
(%)
(ns)
(ns)
Typical RF performance in a class-AB production test circuit for SOT502A
pulsed RF 1030 to 1090 28 200 20 65
Typical RF performance in a Gullwing application for SOT502C and SOT502D
10
15
6
6
pulsed RF
1030 to 1090
28
200
20
65
1.2 Features and benefits
Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply
voltage of 28 V and an IDq of 100 mA:
Output power = 200 W
Power gain = 20 dB
Efficiency = 65 %
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1030 MHz to 1090 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.
BLA6G1011(L)(S)-200R(G)
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
Pinning
Description
Simplified outline
Graphic symbol
BLA6G1011-200R (SOT502A)
1
2
3
drain
gate
1
1
3
2
[1]
[1]
[1]
source
2
3
sym112
BLA6G1011L-200RG (SOT502D)
1
2
3
drain
gate
1
1
3
source
2
3
2
sym112
BLA6G1011LS-200RG (SOT502C)
1
2
3
drain
gate
1
1
3
source
2
3
2
sym112
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLA6G1011-200R
-
flanged LDMOST ceramic package; 2 mounting
holes; 2 leads
SOT502A
BLA6G1011L-200RG
-
eared flanged LDMOST ceramic package; 2
mounting holes; 2 leads
SOT502D
BLA6G1011LS-200RG -
earless flanged LDMOST ceramic package; 2 leads SOT502C
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
Unit
V
drain-source voltage
gate-source voltage
-
65
VGS
0.5 +13
V
BLA6G1011-200R_L-200RG_LS-200RG
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 9 November 2011
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Power LDMOS transistor
Table 4.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
ID
drain current
-
49
A
Tstg
Tj
storage temperature
junction temperature
65
+150 C
-
225
C
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Type
Typ
Unit
Zth(j-c)
transient thermal impedance Tcase = 25 C;
BLA6G1011-200R
0.085 K/W
0.065 K/W
from junction to case
tp = 50 s;
= 2 %
BLA6G1011L-200RG
BLA6G1011LS-200RG 0.065 K/W
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.9 mA
65
-
-
V
VGS(th)
VGSq
gate-source threshold voltage VDS = 10 V; ID = 270 mA 1.4
2.0
2.2
2.4
2.7
V
V
gate-source quiescent voltage VDS = 28 V;
ID = 1620 mA
1.7
IDSS
IDSX
drain leakage current
drain cut-off current
VGS = 0 V; VDS = 28 V
-
-
4.2
-
A
VGS = VGS(th) + 3.75 V;
VDS = 10 V
40
48
A
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 9.45 A
-
-
420
26
nA
S
forward transconductance
11
18
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 9.45 A
0.012 0.07
0.093
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
3
-
pF
Table 7.
RF characteristics
Test signal: Pulsed RF; tp = 50 s; = 2 %; VDS = 28 V; IDq = 100 mA; Tcase = 25 C; unless
otherwise specified; in a class-AB production test circuit for straight leads.
Symbol Parameter
Conditions
Min
200
18
-
Typ
-
Max
-
Unit
W
PL
Gp
RLin
D
tr
output power
power gain
input return loss
drain efficiency
rise time
PL = 200 W
PL = 200 W
PL = 200 W
PL = 200 W
PL = 200 W
20
10
65
10
6
-
dB
dB
%
8
-
58
-
20
20
ns
tf
fall time
-
ns
BLA6G1011-200R_L-200RG_LS-200RG
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 9 November 2011
3 of 13
BLA6G1011(L)(S)-200R(G)
NXP Semiconductors
Power LDMOS transistor
6.1 Ruggedness in class-AB operation
The BLA6G1011-200R, BLA6G1011L-200RG and BLA6G1011LS-200RG are enhanced
rugged devices and are capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: tp = 50 s; = 2 %;
VDS = 28 V; IDq = 100 mA; PL = 200 W; f = 1030 MHz to 1090 MHz.
7. Application information
7.1 Impedance information
Table 8.
Typical impedance
Typical values unless otherwise specified.
f
ZS
ZL
MHz
BLA6G1011-200R
1030
1060
1090
0.57 j0.94
0.70 j1.13
0.80 j1.53
0.80 j0.68
0.84 j0.52
0.86 j0.35
BLA6G1011L-200RG and BLA6G1011LS-200RG
1030
1060
1090
0.69 j2.18
0.86 j2.36
1.12 j2.54
0.84 j0.59
0.85 j0.73
0.86 j0.87
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
BLA6G1011-200R_L-200RG_LS-200RG
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 9 November 2011
4 of 13
BLA6G1011(L)(S)-200R(G)
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Power LDMOS transistor
7.2 RF performance
001aak266
001aak267
250
22
P
L
G
p
(W)
(dB)
(1)
(2)
(3)
200
20
150
100
50
18
16
14
12
(1)
(2)
(3)
0
0
1
2
3
4
0
50
100
150
200
250
P (W)
L
P (W)
i
VDS = 28 V; tp = 50 s; = 2 %; IDq = 100 mA.
VDS = 28 V; tp = 50 s; = 2 %; IDq = 100 mA.
(1) f = 1030 MHz
(2) f = 1060 MHz
(3) f = 1090 MHz
(1) f = 1030 MHz
(2) f = 1060 MHz
(3) f = 1090 MHz
Fig 2. Output power as a function of input power;
typical values
Fig 3. Power gain as a function of load power;
typical values
001aak268
001aak269
70
25
20
15
10
5
75
η
D
(%)
G
p
η
D
(%)
RL
in
60
50
40
30
20
10
0
G
(dB)
p
70
65
60
55
50
(1)
(2)
(3)
η
D
RL
in
0
1020
0
50
100
150
200
250
(W)
1040
1060
1080
1100
P
f (MHz)
L
VDS = 28 V; tp = 50 s; = 2 %; IDq = 100 mA.
PL = 200 W; VDS = 28 V; tp = 50 s; = 2 %;
Dq = 100 mA.
I
(1) f = 1030 MHz
(2) f = 1060 MHz
(3) f = 1090 MHz
Fig 4. Drain efficiency as a function of load power;
typical values
Fig 5. Power gain, input return loss and drain
efficiency as function of frequency;
typical values
BLA6G1011-200R_L-200RG_LS-200RG
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 9 November 2011
5 of 13
BLA6G1011(L)(S)-200R(G)
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Power LDMOS transistor
7.3 Application circuit
Remark: For BLA6G1011-200R with straight leads
+
C5
C6
C7
C2
C1
R1
C8
C3
C4
001aak270
See Table 9 for list of components.
Fig 6. Component layout for class-AB application circuit
Table 9.
List of components
See Figure 6.
Striplines are on a Rogers Duroid 6010 Printed-Circuit Board (PCB); r = 6.15 F/m;
thickness = 0.64 mm
Component Description
Value
Remarks
C1, C6
C2
multilayer ceramic chip capacitor 10 F
multilayer ceramic chip capacitor 68 pF
multilayer ceramic chip capacitor 1.5 pF
multilayer ceramic chip capacitor 3.9 pF
multilayer ceramic chip capacitor 30 pF
TDK
[1]
[1]
[1]
[2]
C3
C4
C5, C8
C7
electrolytic capacitor
SMD resistor
470 F; 63 V
12
R1
1206
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
BLA6G1011-200R_L-200RG_LS-200RG
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 9 November 2011
6 of 13
BLA6G1011(L)(S)-200R(G)
NXP Semiconductors
Power LDMOS transistor
8. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
H
U
1
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
12.83
12.57
3.38
3.12
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
34.16 9.91
33.91 9.65
0.15
0.08
27.94
1.100
0.25
0.01
0.51
0.02
mm
0.505
0.495
0.133 0.067
0.123 0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
1.345 0.390
1.335 0.380
0.006
0.003
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502A
Fig 7. Package outline SOT502A
BLA6G1011-200R_L-200RG_LS-200RG
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 9 November 2011
7 of 13
BLA6G1011(L)(S)-200R(G)
NXP Semiconductors
Power LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502C
0.4 mm
gauge plane
D
L
p
A
F
D
1
detail X
U
B
1
w
b
B
2
v
A
X
E
1
3
U
E
1
H
2
2
A
Q
θ
0
5
10 mm
scale
Dimensions
(1)
Unit
A
b
c
D
D
E
E
1
F
H
L
Q
U
1
U
v
w
2
θ
1
p
2
7°
max 4.72 12.83 0.16 20.02 19.96 9.53 9.53 1.14 13.6 1.2 0.195 20.70 9.91
mm nom
0.25 0.25
0.01 0.01
0°
7°
min 3.43 12.57 0.10 19.61 19.66 9.27 9.27 0.89 13.2 0.8 0.055 20.45 9.65
max 0.185 0.505 0.006 0.788 0.786 0.375 0.375 0.045 0.536 0.048 0.008 0.815 0.39
inches nom
min 0.135 0.495 0.004 0.772 0.774 0.365 0.365 0.035 0.519 0.031 0.002 0.805 0.38
0°
Note
1. Millimeter dimensions are derived from the original inch dimensions.
sot502c_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
11-03-23
11-05-02
SOT502C
Fig 8. Package outline SOT502C
BLA6G1011-200R_L-200RG_LS-200RG
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 9 November 2011
8 of 13
BLA6G1011(L)(S)-200R(G)
NXP Semiconductors
Power LDMOS transistor
Eared flanged LDMOST ceramic package; 2 leads; 2 mounting holes
SOT502D
0.4 mm
gauge plane
D
A
L
p
F
D
1
detail X
U
B
1
q
b
w
B
2
v
A
X
E
1
3
U
E
1
p
H
2
w
A
B
1
2
A
Q
θ
0
5
10 mm
scale
Dimensions
(1)
Unit
A
b
c
D
D
1
E
E
F
H
L
p
Q
U
1
U
w
1
w
2
θ
p
v
q
1
2
7°
max 4.72 12.83 0.16 20.02 19.96 9.53 9.53 1.14 13.6 1.2
mm nom
0.195
34.16 9.91
3.38
0.25 0.25
0.01 0.01
27.94
1.1
0.25
0°
7°
min 3.43 12.57 0.10 19.61 19.66 9.27 9.27 0.89 13.2 0.8
max 0.185 0.505 0.006 0.788 0.786 0.375 0.375 0.045 0.536 0.048
0.055
0.008
33.91 9.65
1.345 0.39
3.12
0.133
inches nom
min 0.135 0.495 0.004 0.772 0.774 0.365 0.365 0.035 0.519 0.031
0.01
0°
0.002
1.335 0.38
0.123
Note
1. Millimeter dimensions are derived from the original inch dimensions.
sot502d_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
11-03-23
11-05-02
SOT502D
Fig 9. Package outline SOT502D
BLA6G1011-200R_L-200RG_LS-200RG
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 9 November 2011
9 of 13
BLA6G1011(L)(S)-200R(G)
NXP Semiconductors
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 10. Abbreviations
Acronym
LDMOS
LDMOST
RF
Description
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
SMD
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11. Revision history
Document ID
Release date Data sheet status Change notice Supersedes
BLA6G1011-200R_L-200RG_LS-200RG V.4 20111109
Product data sheet
BLA6G1011-200R v.3
Modifications:
• This document now also describes the products BLA6G1011L-200RG
and BLA6G1011LS-200RG.
BLA6G1011-200R v.3
20100714
Product data sheet -
-
BLA6G1011-200R_L-200RG_LS-200RG
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 9 November 2011
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Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
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applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
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deemed to offer functions and qualities beyond those described in the
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NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
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customer(s). NXP does not accept any liability in this respect.
12.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
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Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
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authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
BLA6G1011-200R_L-200RG_LS-200RG
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 9 November 2011
11 of 13
BLA6G1011(L)(S)-200R(G)
NXP Semiconductors
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLA6G1011-200R_L-200RG_LS-200RG
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 9 November 2011
12 of 13
BLA6G1011(L)(S)-200R(G)
NXP Semiconductors
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 4
3
4
5
6
6.1
7
Application information. . . . . . . . . . . . . . . . . . . 4
Impedance information . . . . . . . . . . . . . . . . . . . 4
RF performance . . . . . . . . . . . . . . . . . . . . . . . . 5
Application circuit . . . . . . . . . . . . . . . . . . . . . . . 6
7.1
7.2
7.3
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Handling information. . . . . . . . . . . . . . . . . . . . 10
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 9 November 2011
Document identifier: BLA6G1011-200R_L-200RG_LS-200RG
相关型号:
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