BLF2043F,135 [NXP]
BLF2043F;
| 型号： | BLF2043F,135 |
| 厂家： | 
NXP |
| 描述： | BLF2043F 局域网 放大器 CD 晶体管 |
| 文件： | 总12页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF2043F
UHF power LDMOS transistor
Product specification
2002 Mar 05
Supersedes data of 2000 Oct 19
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2043F
FEATURES
PINNING - SOT467C
PIN
• High power gain
DESCRIPTION
• Easy power control
• Excellent ruggedness
1
2
3
drain
gate
• Source on mounting base eliminates DC isolators,
reducing common mode inductance
source, connected to flange
• Designed for broadband operation (HF to 2.2 GHz).
1
APPLICATIONS
• Communication transmitter applications in the UHF
frequency range.
3
2
Top view
DESCRIPTION
MBK584
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the mounting flange.
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
f
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
MODE OF OPERATION
(MHz)
CW, class-AB (2-tone)
f1 = 2200; f2 = 2200.1
26
10 (PEP)
>11
>30
≤−26
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER
VDS
MIN.
MAX.
UNIT
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
−
−
−
65
V
VGS
ID
±15
2.2
V
A
Tstg
Tj
−65
+150
200
°C
°C
−
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2002 Mar 05
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2043F
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
Rth mb-h
thermal resistance from junction to mounting base Tmb = 25 °C; note 1
5
K/W
K/W
thermal resistance from mounting base to heatsink
0.5
Note
1. Thermal resistance is determined under RF operating conditions.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
75
TYP. MAX. UNIT
V(BR)DSS
VGSth
IDSS
IDSX
IGSS
gfs
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
VGS = 0; ID = 0.2 mA
−
−
V
VDS = 10 V; ID = 20 mA
VGS = 0; VDS = 26 V
4
−
5
V
−
−
1.5
−
µA
A
VGS = VGSth + 9 V; VDS = 10 V
VGS = ±15 V; VDS = 0
2.8
−
−
gate leakage current
−
40
−
nA
S
forward transconductance
drain-source on-state resistance
input capacitance
VDS = 10 V; ID = 0.75 A
VGS = 10 V; ID = 0.75 A
VGS = 0; VDS = 26 V; f = 1 MHz
VGS = 0; VDS = 26 V; f = 1 MHz
VGS = 0; VDS = 26 V; f = 1 MHz
−
0.5
1.2
13
11
0.5
RDSon
Cis
−
−
Ω
−
−
pF
pF
pF
Cos
output capacitance
−
−
Crs
feedback capacitance
−
−
MGW642
2
10
handbook, halfpage
C
(pF)
C
os
C
is
10
C
rs
1
−1
10
0
10
20
30
V
(V)
DS
VGS = 0; f = 1 MHz.
Fig.2 Input, output and feedback capacitance as
functions of drain-source voltage, typical
values.
2002 Mar 05
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2043F
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.4 K/W; unless otherwise specified.
f
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
MODE OF OPERATION
(MHz)
CW, class-AB (2-tone)
f1 = 2200; f2 = 2200.1
26
85
10 (PEP)
>11
>30
≤−26
Ruggedness in class-AB operation
The BLF2043F is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: VDS = 26 V; f = 2200 MHz at rated load power.
MGW643
MGW644
60
15
0
handbook, halfpage
handbook, halfpage
d
im
G
G
p
(dB)
η
(%)
p
D
(dBc)
−20
d
d
40
3
10
η
D
5
−40
−60
d
7
20
5
−80
0
16
0
0
4
8
12
(PEP) (W)
0
4
8
12
(PEP) (W)
16
P
P
L
L
VDS = 26 V; IDQ = 85 mA;
VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C;
f1 = 2000 MHz; f2 = 2000.1 MHz.
f1 = 2000 MHz; f2 = 2000.1 MHz.
Fig.3 Power gain and efficiency as functions of
peak envelope load power, typical values.
Fig.4 Intermodulation distortion as a function of
peak envelope load power; typical values.
2002 Mar 05
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2043F
MGW645
MGW646
60
15
0
handbook, halfpage
handbook, halfpage
d
im
G
p
(dB)
η
(%)
D
(dBc)
G
p
−20
d
d
40
10
3
η
D
5
−40
−60
d
7
20
5
0
−80
0
16
0
4
8
12
(PEP) (W)
0
4
8
12
16
P
(PEP) (W)
P
L
L
VDS = 26 V; IDQ = 85 mA;
VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C;
f1 = 2200 MHz; f2 = 2200.1 MHz.
f1 = 2200 MHz; f2 = 2200.1 MHz.
Fig.5 Power gain and efficiency as functions of
peak envelope load power, typical values.
Fig.6 Intermodulation distortion as a function of
peak envelope load power; typical values.
MGW647
0
handbook, halfpage
d
3
(dBc)
−20
−40
(1)
(2)
(3)
−60
0
4
8
12
16
P
(PEP) (W)
L
VDS = 26 V; Th ≤ 25 °C;
f1 = 2200 MHz; f2 = 2200.1 MHz.
(1) IDQ = 115 mA.
(2) IDQ = 55 mA.
(3) IDQ = 85 mA.
Fig.7 Intermodulation distortion as a function of
peak envelope load power; typical values.
2002 Mar 05
5
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2043F
MGW648
MGW649
8
6
handbook, halfpage
handbook, halfpage
Z
L
Z
i
(Ω)
(Ω)
4
R
L
6
2
4
0
−2
−4
x
i
X
L
2
r
i
−6
1.8
0
1.8
1.9
2.0
2.1
2.2
1.9
2.0
2.1
2.2
f (GHz)
f (GHz)
VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th ≤ 25 °C.
VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th ≤ 25 °C.
Impedance measured at reference planes.
Impedance measured at reference planes.
Fig.8 Input impedance as a function of frequency
(series components); typical values.
Fig.9 Load impedance as a function of frequency
(series components); typical values.
V
DD
C18
C13
C19
C14
C20
C15
L10
C17
C16
C11
C12
V
gate
C6
C5
R1
L9
L6
C1
C2
50 Ω
input
50 Ω
output
L7
L1
L2
L3
L8
C10
C8
L4
L5
C3
C4
C7
C9
MGW650
Fig.10 Class-AB test circuit for 2.2 GHz.
6
2002 Mar 05
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2043F
List of components (see Figs 10 and 11)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS CATALOGUE NO.
C1, C2, C10, C11
multilayer ceramic chip capacitor; note 1 6.8 pF
C3, C4, C7, C9
Tekelec variable capacitor; type 37271
0.6 to 4.5 pF
C5
multilayer ceramic chip capacitor; note 1 2.4 pF
C6, C18
C8
tantalum SMD capacitor
10 µF; 35 V
multilayer ceramic chip capacitor; note 1 1.5 pF
multilayer ceramic chip capacitor; note 2 1 nF
multilayer ceramic chip capacitor; note 1 10 pF
multilayer ceramic chip capacitor; note 1 51 pF
multilayer ceramic chip capacitor; note 1 120 pF
C12, C20
C13
C14
C15
C16
C17
C19
L1, L8
L2
multilayer ceramic chip capacitor
electrolytic capacitor
electrolytic capacitor
stripline; note 3
100 nF
47 µF; 35 V
100 µF; 63 V
50 Ω
2222 581 16641
2222 036 90094
2222 037 58101
4 × 1.5 mm
stripline; note 3
50 Ω
7 × 1.5 mm
L3
stripline; note 3
58.1 Ω
11.3 Ω
11.3 Ω
52.8 Ω
50 Ω
12 × 1.2 mm
L4
stripline; note 3
9 × 10 mm
L5
stripline; note 3
11.5 × 10 mm
11 × 1.4 mm
L6
stripline; note 3
L7
stripline; note 3
5.5 × 1.5 mm
L9
stripline; note 3
64.7 Ω
38 × 1 mm
L10
2 turns enamelled 0.5 mm copper wire
int. dia. = 3 mm;
length = 3 mm
R1
metal film resistor
390 Ω; 0.6 W
2322 156 11009
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 100B or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board with Rogers 5880 dielectric (εr = 2.2);
thickness 0.51 mm.
2002 Mar 05
7
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2043F
C18
C20
C17
L10
C19
V
DD
C11 C12
C6
C5
V
gate
R3
C1
C2
C8
C10
C9
C3
C7
C4
BLF2043F 2.2 GHz input
BLF2043F 2.2 GHz output
60
60
BLF2043F 2.2 GHz input
33
BLF2043F 2.2 GHz output
33
MGU555
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 2.2), thickness 0.51 mm.
The other side is unetched and serves as a ground plane.
Fig.11 Component layout for 2.2 GHz class-AB test circuit.
2002 Mar 05
8
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2043F
PACKAGE OUTLINE
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT467C
D
A
F
B
3
D
1
U
1
q
C
c
1
E
1
H
U
E
2
A
w
p
M
M
M
B
A
1
2
Q
w
M
M
C
b
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
A
b
c
D
D
E
E
F
H
p
Q
q
U
U
w
1
w
2
1
1
1
2
4.67
3.94
3.43 2.21
3.18 1.96
20.45 5.97
20.19 5.72
5.59 0.15
5.33 0.10
9.25
9.04
9.27
9.02
5.92
5.77
5.97 1.65 18.54
5.72 1.40 17.02
14.27
0.562
0.25
0.51
0.135 0.087
0.125 0.077
0.805 0.235
0.795 0.225
0.184 0.220 0.006 0.364 0.365 0.233 0.235 0.065 0.73
0.155 0.210 0.004 0.356 0.355 0.227 0.225 0.055 0.67
inch
0.010 0.020
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
99-12-06
99-12-28
SOT467C
2002 Mar 05
9
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2043F
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Mar 05
10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2043F
NOTES
2002 Mar 05
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/02/pp12
Date of release: 2002 Mar 05
Document order number: 9397 750 09171
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