BLF242 [NXP]
HF/VHF power MOS transistor; 高频/甚高频功率MOS晶体管
| 型号： | BLF242 |
| 厂家： | 
NXP |
| 描述： | HF/VHF power MOS transistor |
| 文件： | 总11页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF242
HF/VHF power MOS transistor
September 1992
Product specification
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF242
FEATURES
PIN CONFIGURATION
• High power gain
halfpage
• Low noise
1
4
• Easy power control
• Good thermal stability
• Withstands full load mismatch
d
s
• Gold metallization ensures
excellent reliability.
g
MBB072
2
3
DESCRIPTION
MSB057
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for professional transmitter
applications in the HF/VHF frequency
range.
Fig.1 Simplified outline and symbol.
CAUTION
The transistor is encapsulated in a
4-lead, SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
PINNING - SOT123
Product and environmental safety - toxic materials
PIN
1
DESCRIPTION
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
drain
2
source
gate
3
4
source
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
f
MODE OF OPERATION
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
CW, class-B
175
28
5
> 13
> 50
typ. 16
typ. 60
September 1992
2
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF242
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
65
UNIT
−
−
−
−
V
±VGS
ID
gate-source voltage
DC drain current
20
1
V
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
up to Tmb = 25 °C
16
150
200
W
°C
°C
−65
−
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-mb
thermal resistance from
junction to mounting base
Tmb = 25 °C; Ptot = 16 W
11 K/W
Rth mb-h
thermal resistance from
Tmb = 25 °C; Ptot = 16 W
0.3 K/W
mounting base to heatsink
MRA918
MPG141
10
20
handbook, halfpage
handbook, halfpage
I
D
(A)
P
tot
(W)
(2)
(1)
1
(2)
(1)
10
−1
10
−2
10
0
0
2
10
10
1
50
100
150
V
(V)
DS
T
(°C)
h
(1) Current is this area may be limited by RDS(on)
.
(1) Continuous operation.
(2) Short-time operation during mismatch.
(2) Tmb = 25 °C.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
September 1992
3
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF242
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)DSS
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
drain-source on-state resistance
on-state drain current
VGS = 0; ID = 0.1 mA
65
−
−
−
−
−
−
V
IDSS
IGSS
VGS(th)
gfs
VGS = 0; VDS = 28 V
10
1
µA
µA
V
±VGS = 20 V; VDS = 0
−
ID = 3 mA; VDS = 10 V
2
4.5
−
ID = 0.3 A; VDS = 10 V
0.16 0.24
S
RDS(on)
IDSX
Cis
ID = 0.3 A; VGS = 1 V
−
−
−
−
−
3.3
1.2
13
5
Ω
VGS = 10 V; VGS = 10 V
VGS = 0; VDS = 28 V; f = 1 MHz
VGS = 0; VDS = 28 V; f = 1 MHz
VGS = 0; VDS = 28 V; f = 1 MHz
−
A
input capacitance
−
pF
pF
pF
Cos
output capacitance
9.4
1.7
−
Crs
feedback capacitance
−
MGP142
MBB777
1.5
4
handbook, halfpage
handbook, halfpage
T.C.
(mV/K)
I
D
(A)
2
0
1
0.5
–2
0
–4
0
0
5
10
15
100
200
300
I
(mA)
V
(V)
D
GS
VDS = 10 V.
VDS = 10 V; Tj = 25 °C.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
Fig.5 Drain current as a function of gate-source
voltage, typical values.
September 1992
4
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF242
MBB778
MBB776
6
30
handbook, halfpage
handbook, halfpage
C
(pF)
R
DS (on)
(Ω)
4
20
10
C
C
is
os
2
0
0
0
0
50
100
150
10
20
30
o
T ( C)
V
(V)
j
DS
ID = 0.3 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values.
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
MBB775
6
handbook, halfpage
C
rs
(pF)
4
2
0
0
10
20
30
V
(V)
DS
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
September 1992
5
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF242
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.3 K/W; unless otherwise specified.
RF performance in CW operation in a common source class-B test circuit.
f
VDS
(V)
IDQ
(mA)
PL
(W)
GP
(dB)
ηD
(%)
RGS
(Ω)
MODE OF OPERATION
(MHz)
CW, class-B
175
28
10
5
> 13
> 50
47
typ. 16
typ. 60
Ruggedness in class-B operation
The BLF242 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under
the following conditions:
VDS = 28 V; f =175 MHz at rated output power.
Noise figure (see Fig.11)
VDS = 28 V; ID = 0.2 A; f = 175 MHz;
RGS = 47 Ω; Th = 25 °C. Input and
output power matched for PL = 5 W;
F = typ. 5.5 dB.
MGP144
MGP143
10
20
100
handbook, halfpage
handbook, halfpage
P
L
(W)
η
G
p
(dB)
d
G
p
(%)
η
d
5
10
50
0
0
0
0
0.5
1
0
5
10
P
(W)
P
(W)
IN
L
Class-B operation; VDS = 28 V; IDQ = 10 mA;
RGS = 47 Ω; f = 175 MHz.
Class-B operation; VDS = 28 V; IDQ = 10 mA;
RGS = 47 Ω; f = 175 MHz.
Fig.10 Load power as a function of input power,
typical values.
Fig.9 Power gain and efficiency as functions of
load power, typical values.
September 1992
6
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF242
C6
L3
L5
D.U.T.
output
50 Ω
C1
L2
L1
input
50 Ω
C7
R1
C3
C2
L4
L6
+V
C3
D
R2
+V
C8
C9
C5
G
MGP145
f = 175 MHz.
Fig.11 Test circuit for class-B operation.
List of components (class-B test circuit)
COMPONENT
DESCRIPTION
film dielectric trimmer
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C2, C7
C3
4 to 40 pF
100 pF
2222 809 08002
multilayer ceramic chip capacitor
(note 1)
C4, C8
C6
ceramic chip capacitor
film dielectric trimmer
electrolytic capacitor
100 nF
2222 852 47104
2222 809 08003
5 to 60 pF
2.2 µF, 40 V
C9
L1
5 turns enamelled 0.7 mm copper wire 53 nH
length 5.4 mm
int. dia. 3 mm
leads 2 × 5 mm
L2, L3
L4
stripline (note 2)
30 Ω
10 × 6 mm
11 turns enamelled 1 mm copper wire 500 nH
length 15.5 mm
int. dia. 8 mm
leads 2 × 5 mm
L5
5 turns enamelled 1 mm copper wire
79 nH
length 9.1 mm
int. dia. 5 mm
leads 2 × 5 mm
L6
R1
R2
grade 3B Ferroxcube RF choke
0.5 W metal film resistor
4312 020 36640
47 Ω
10 Ω
0.5 W metal film resistor
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (εr = 4.5),
thickness 1⁄16 inch.
September 1992
7
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF242
150
strap
strap
70
rivet
L6
+V
D
C5
R2
C8 C9
C3
C4
+V
G
L4
L5
R1
C1
C6
L1
C2
C7
L2
L3
MGP146
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by fixing screws, copper straps and hollow rivets at the
edges of the board and under the source.
Dimensions in mm.
Fig.12 Component layout for 175 MHz class-B test circuit.
September 1992
8
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF242
MGP149
MGP150
50
100
handbook, halfpage
handbook, halfpage
Z
i
(Ω)
r
Z
L
i
(Ω)
R
X
30
L
10
−10
−30
50
L
x
i
0
0
0
100
200
100
200
f (MHz)
f (MHz)
Class-B operation; VDS = 28 V; PL = 30 W;
Class-B operation; VDS = 28 V; PL = 30 W;
RGS = 47 Ω; Th = 25 °C.
RGS = 47 Ω; Th = 25 °C.
Fig.14 Load impedance as a function of frequency
(series components), typical values.
Fig.13 Input impedance as a function of frequency
(series components), typical values.
MGP148
20
handbook, halfpage
G
p
(dB)
10
0
0
100
200
f (MHz)
Class-B operation; VDS = 28 V; PL = 30 W;
RGS = 47 Ω; Th = 25 °C.
Fig.15 Power gain as a function of frequency,
typical values.
September 1992
9
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF242
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT123A
D
A
F
q
C
M
B
U
1
w
2
C
c
H
b
L
4
3
A
α
p
U
3
U
2
w
M
A
B
1
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
F
H
L
p
Q
q
U
U
U
w
w
2
α
UNIT
mm
1
1
2
3
1
5.82
5.56
9.63
9.42
7.47
6.37
9.73
9.47
2.72 20.71 5.61
2.31 19.93 5.16
3.33
3.04
4.63
4.11
25.15 6.61
24.38 6.09
9.78
9.39
0.18
0.10
18.42
0.725
0.51 1.02
0.02 0.04
45°
0.229
0.219
0.397
0.371
0.294
0.251
0.383
0.373
0.107 0.815 0.221 0.131
0.091 0.785 0.203 0.120
0.26 0.385
0.24 0.370
0.007
0.004
0.182
0.162
0.99
0.96
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT123A
97-06-28
September 1992
10
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF242
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1992
11
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