BLF522 [NXP]
UHF power MOS transistor; 超高频功率MOS晶体管
| 型号： | BLF522 |
| 厂家： | 
NXP |
| 描述： | UHF power MOS transistor |
| 文件： | 总12页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF522
UHF power MOS transistor
September 1992
Product specification
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF522
FEATURES
PIN CONFIGURATION
• High power gain
• Easy power control
halfpage
• Gold metallization
• Good thermal stability
• Withstands full load mismatch
• Designed for broadband operation.
d
1
2
4
6
3
5
g
s
MBB072
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the UHF
frequency range.
MBA931 - 1
Top view
Fig.1 Simplified outline and symbol.
The transistor is encapsulated in a
6-lead, SOT171 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
PINNING - SOT171
WARNING
PIN
DESCRIPTION
source
Product and environmental safety - toxic materials
1
2
3
4
5
6
source
gate
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
drain
source
source
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source class-B circuit.
f
VDS
(V)
PL
(W)
GP
(dB)
ηD
(%)
MODE OF OPERATION
CW, class-B
(MHz)
500
12.5
5
> 10
> 50
September 1992
2
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF522
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
40
UNIT
−
−
−
−
V
±VGS
ID
gate-source voltage
DC drain current
20
V
1.8
20
A
Ptot
Tstg
Ti
total power dissipation
storage temperature
junction temperature
up to Tmb = 25 °C
W
°C
°C
−65
150
200
−
THERMAL RESISTANCE
SYMBOL
THERMAL
RESISTANCE
PARAMETER
CONDITIONS
Rth j-mb
Rth mb-h
thermal resistance from junction to mounting Tmb = 25 °C; Ptot = 20 W
base
8.8 K/W
thermal resistance from mounting base to
heatsink
Tmb = 25 °C; Ptot = 20 W
0.4 K/W
MRA427
MRA990
35
5
handbook, halfpage
handbook, halfpage
P
tot
(W)
I
D
30
(A)
25
(2)
(1)
(2)
1
20
(1)
15
10
5
0
0
0.1
1
10
100
20
40
60
80
100
T
120
( C)
V
(V)
o
DS
h
(1) Current in this area may be limited by RDS(on)
.
(1) Continuous operation.
(2) Short-time operation during mismatch.
(2) mb = 25 °C.
T
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
September 1992
3
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF522
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)DSS
PARAMETER
CONDITIONS
VGS = 0; ID = 5 mA
MIN. TYP. MAX. UNIT
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
40
−
−
−
V
IDSS
IGSS
VGS(th)
gfs
VGS = 0; VDS = 12.5 V
±VGS = 20 V; VDS = 0
ID = 50 mA; VDS = 10 V
ID = 0.7 A; VDS = 10 V
−
0.5
1
mA
µA
V
−
−
2
−
4.5
−
200
−
270
1.8
2.3
14
17
3
mS
Ω
RDS(on)
IDSX
Cis
drain-source on-state resistance ID = 0.7 A; VGS = 15 V
2.7
−
on-state drain current
input capacitance
VGS = 15 V; VDS = 10 V
−
A
VGS = 0; VDS = 12.5 V; f = 1 MHz
VGS = 0; VDS = 12.5 V; f = 1 MHz
VGS = 0; VDS = 12.5 V; f = 1 MHz
−
−
pF
pF
pF
Cos
output capacitance
feedback capacitance
−
−
Crs
−
−
MRA249
MRA254
3
25
handbook, halfpage
handbook, halfpage
I
D
T.C.
(mV/K)
(A)
2
15
1
0
5
−5
10
0
4
8
12
16
V
20
(V)
2
3
4
10
10
10
I
(mA)
GS
D
VDS = 10 V.
VDS = 10 V; Tj = 25 °C.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
Fig.5 Drain current as a function of gate-source
voltage, typical values.
September 1992
4
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF522
MRA253
MRA246
5
50
handbook, halfpage
handbook, halfpage
R
C
(pF)
DSon
(Ω)
4
40
30
20
10
3
2
1
0
C
os
C
is
0
0
4
8
12
16
0
50
100
150
o
T ( C)
V
(V)
j
DS
ID = 0.7 A; VGS = 15 V;
VGS = 0; f = 1 MHz.
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values.
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
MRA256
10
handbook, halfpage
C
rs
(pF)
8
6
4
2
0
0
4
8
12
16
V
(V)
DS
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
September 1992
5
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF522
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.4 K/W, unless otherwise specified.
RF performance in a common source class-B circuit.
f
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
MODE OF OPERATION
CW, class-B
(MHz)
500
12.5
50
5
> 10
> 50
typ. 11
typ. 55
Ruggedness in class-B operation
The BLF522 is capable of withstanding a full load
mismatch corresponding to VSWR = 50:1 through all
phases under the following conditions:
VDS = 15.5 V; f = 500 MHz at rated output power.
MRA252
MRA247
20
10
100
handbook, halfpage
handbook, halfpage
G
P
P
(dB)
η
(%)
L
(W)
8
16
80
η
12
8
6
4
2
60
40
20
0
G
P
4
0
0
0
0.4
0.8
1.2
1.6
3
4
5
6
7
P
(W)
P
(W)
IN
L
Class-B operation; VDS = 12.5 V; IDQ = 50 mA;
f = 500 MHz.
Class-B operation; VDS = 12.5 V; IDQ = 50 mA;
f = 500 MHz.
Fig.10 Load power as a function of input power,
typical values.
Fig.9 Power gain and efficiency as functions of
load power, typical values.
September 1992
6
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF522
C15
L9
C17
L10
L5
L6
L8
C20
C19
50 Ω
output
DUT
C2
L1
C4
L2
C6
L3
L4
C1
C16
C18
50 Ω
input
C12
C3
C5
C7
R1
C10
L7
R5
C8
C13
C14
R2
C9
C11
+V
DS
MGA070
R3
R4
f = 500 MHz.
Fig.11 Test circuit for class-B operation.
September 1992
7
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF522
List of components (class-B test circuit)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C8, C20
multilayer ceramic chip capacitor
(note 1)
430 pF, 50 V
C2
multilayer ceramic chip capacitor
(note 2)
3.9 pF, 50 V
C3, C5, C18, C19 film dielectric trimmer
C4 multilayer ceramic chip capacitor
(note 2)
C6, C7, C15, C16, multilayer ceramic chip capacitor
C17 (note 2)
C9, C10, C11, C13 multilayer ceramic chip capacitor
2 to 18 pF
2222 809 09003
20 pF, 50 V
10 pF, 50 V
100 nF, 50 V
390 pF, 50 V
2222 852 47104
2222 030 38109
C12
multilayer ceramic chip capacitor
(note 1)
C14
L1
electrolytic capacitor
stripline (note 3)
stripline (note 3)
stripline (note 3)
stripline (note 3)
10 µF, 63 V
50 Ω
36.6 × 2.5 mm
16.7 × 2.5 mm
7.7 × 2.5 mm
3 × 3 mm
L2
50 Ω
L3
50 Ω
L4, L5
L6
42 Ω
4 turns enamelled 0.8 mm copper 24.9 nH
wire
length 6.9 mm
int. dia. 2.5 mm
leads 2 × 5 mm
L7
grade 3B Ferroxcube RF choke
4312 020 36642
L8
stripline (note 3)
50 Ω
50 Ω
50 Ω
10 kΩ
1 kΩ
10 × 2.5 mm
L9
stripline (note 3)
16.5 × 2.5 mm
34.5 × 2.5 mm
L10
R1
R2
R3
R4
R5
stripline (note 3)
0.4 W metal film resistor
0.4 W metal film resistor
10 turns cermet potentiometer
0.4 W metal film resistor
1 W metal film resistor
2322 151 51003
2322 151 51002
50 kΩ
47 kΩ
10 Ω
2322 151 54703
2322 153 51009
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
3. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2);
thickness 0.79 mm.
September 1992
8
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF522
+V
DS
R3
C11
C9
R2
C14
R5
C8
L7
C13
C10
C12
R1
L6
C4
C6
L2
C7
C20
C1 C2
L1
C15
C16
L3 L4
L5 L8
L9
L10
C18
C19
C3
C5
MBC218
150 mm
strap
strap
strap
strap
strap
70 mm
rivets
(12x)
strap
strap
strap
MBC217
The circuit and components are situated on one side of the printed circuit board, the other side being fully
metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets
for a direct contact between upper and lower sheets.
Fig.12 Component layout for 500 MHz class-B test circuit.
9
September 1992
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF522
MRA250
MRA251
10
20
handbook, halfpage
r
handbook, halfpage
i
Z
i
Z
L
0
(Ω)
(Ω)
15
−20
x
i
R
X
L
10
5
−40
−60
−80
L
0
100
200
300
400
500
100
200
300
400
500
f (MHz)
f (MHz)
Class-B operation; VDS = 12.5 V; IDQ = 50 mA;
PL = 5 W.
Class-B operation; VDS = 12.5 V; IDQ = 50 mA;
PL = 5 W.
Fig.13 Input impedance as a function of frequency
(series components), typical values.
Fig.14 Load impedance as a function of frequency
(series components), typical values.
MRA248
30
handbook, halfpage
G
P
(dB)
25
20
15
handbook, halfpage
10
5
Z
Z
L
MBA379
i
0
100
200
300
400
500
f (MHz)
Class-B operation; VDS = 12.5 V; IDQ = 50 mA;
PL = 5 W.
Fig.15 Definition of MOS impedance.
Fig.16 Power gain as a function of frequency,
typical values.
September 1992
10
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF522
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 6 leads
SOT171A
D
A
F
B
D
1
U
1
q
C
w
M
H
1
C
2
c
b
1
2
1
4
6
E
H
E
U
1
2
3
5
w
p
A
M
A
B
1
Q
w
b
M
3
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
b
D
D
E
E
e
F
H
H
p
Q
q
U
U
w
w
w
3
UNIT
1
1
1
1
1
2
1
2
2.15 3.20
1.85 2.89
6.81
6.07
9.25 9.30 5.95 6.00
9.04 8.99 5.74 5.70
3.05 11.31 9.27 3.43 4.32
2.54 10.54 9.01 3.17 4.11
24.90 6.00
24.63 5.70
0.16
0.07
18.42
0.725
0.51 1.02 0.26
0.02 0.04 0.01
mm
3.58
0.085 0.126
0.073 0.114
0.268
0.239
0.364 0.366 0.234 0.236
0.356 0.354 0.226 0.224
0.120 0.445
0.100 0.415
0.135 0.170
0.125 0.162
0.236
0.224
0.006
0.003
0.365
0.355
0.980
0.970
inches
0.140
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT171A
97-06-28
September 1992
11
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF522
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1992
12
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