BLF6G10S-45 [NXP]
Power LDMOS transistor; 功率LDMOS晶体管
| 型号： | BLF6G10S-45 |
| 厂家： | 
NXP |
| 描述： | Power LDMOS transistor |
| 文件： | 总10页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF6G10S-45
Power LDMOS transistor
Rev. 03 — 20 January 2010
Product data sheet
1. Product profile
1.1 General description
45 W LDMOS power transistor for base station applications at frequencies from 700 MHz
to 1000 MHz.
Table 1.
Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
VDS
(V)
28
PL(AV)
(W)
Gp
ηD
(%)
8
ACPR
(dBc)
−48.5[1]
(MHz)
(dB)
23
2-carrier W-CDMA
920 to 960
1.0
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a
supply voltage of 28 V and an IDq of 350 mA:
Average output power = 1.0 W
Gain = 23 dB
Efficiency = 8 %
ACPR = −48.5 dBc
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (700 MHz to 1000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
BLF6G10S-45
NXP Semiconductors
Power LDMOS transistor
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
700 MHz to 1000 MHz frequency range.
2. Pinning information
Table 2.
Pinning
Pin
1
Description
drain
Simplified outline
Symbol
1
3
2
1
3
2
gate
[1]
3
source
2
sym112
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
SOT608B
BLF6G10S-45
-
ceramic earless flanged package; 2 leads
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
drain current
-
−0.5 +13
V
-
13
A
Tstg
Tj
storage temperature
junction temperature
−65
+150 °C
225 °C
-
5. Thermal characteristics
Table 5.
Symbol
Rth(j-case)
Thermal characteristics
Parameter
thermal resistance from junction Tcase = 80 °C;
to case PL = 12.5 W
Conditions
Typ
Unit
K/W
1.7
BLF6G10S-45_3
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 20 January 2010
2 of 10
BLF6G10S-45
NXP Semiconductors
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C per section; unless otherwise specified.
Symbol Parameter
Conditions
VGS = 0 V; ID = 0.5 mA
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
65
-
-
V
VGS(th)
VGSq
IDSS
gate-source threshold voltage VDS = 10 V; ID = 72 mA
1.35
1.9
2.15
-
2.35
2.7
1.4
-
V
gate-source quiescent voltage VDS = 28 V; ID = 430 mA 1.7
V
drain leakage current
drain cut-off current
VGS = 0 V; VDS = 28 V
-
-
μA
A
IDSX
VGS = VGS(th) + 3.75 V;
12.5
VDS = 10 V
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 3.6 A
-
-
-
-
140
nA
S
forward transconductance
5
-
-
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 2.52 A
0.2
Ω
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f1 = 922.5 MHz; f2 = 927.5 MHz; f3 = 952.5 MHz; f4 = 957.5 MHz;
RF performance at VDS = 28 V; IDq = 350 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
dB
dB
%
Gp
power gain
PL(AV) = 1.0 W
PL(AV) = 1.0 W
PL(AV) = 1.0 W
PL(AV) = 1.0 W
21.8 23
24.5
RLin
ηD
input return loss
5.5
7
9
8
-
-
drain efficiency
ACPR
adjacent channel power ratio
-
−48.5 −45.5 dBc
7.1 Ruggedness in class-AB operation
The BLF6G10S-45 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 350 mA; PL = 35 W (CW); f = 960 MHz.
BLF6G10S-45_3
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 20 January 2010
3 of 10
BLF6G10S-45
NXP Semiconductors
Power LDMOS transistor
001aaf991
25
75
η
G
(dB)
D
(%)
p
η
D
23
60
21
19
17
15
45
30
15
0
G
p
0
10
20
30
40
50
P
L
(W)
VDS = 28 V; IDq = 350 mA; f = 960 MHz.
Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values
001aaf992
001aaf993
25
70
0
G
(dB)
η
D
(%)
p
η
D
IMD
(dBc)
IMD3
IMD5
23
55
−30
21
19
17
15
40
25
10
−5
G
p
IMD7
−60
−90
0
20
40
60
P
80
(W)
0
20
40
60
80
(W)
P
L(PEP)
L(PEP)
VDS = 28 V; IDq = 350 mA; f1 = 960 MHz;
f2 = 960.1 MHz.
VDS = 28 V; IDq = 350 mA; f1 = 960 MHz;
f2 = 960.1 MHz.
Fig 2. Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
Fig 3. Intermodulation distortion as a function of
peak envelope load power; typical values
BLF6G10S-45_3
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 20 January 2010
4 of 10
BLF6G10S-45
NXP Semiconductors
Power LDMOS transistor
001aaf994
001aaf997
25
16
−40
G
(dB)
η
ACPR
(dBc)
p
D
(%)
G
p
(1)
(2)
23
12
−45
−50
−55
−60
(1) (2)
(1)
(2)
21
19
17
8
4
0
η
D
20
24
28
32
36
(dBm)
20
24
28
32 36
P (dBm)
L(AV)
P
L(AV)
VDS = 28 V; IDq = 350 mA; f1 = 952.5 MHz;
f2 = 957.5 MHz; carrier spacing 5 MHz.
VDS = 28 V; IDq = 350 mA; carrier spacing 5 MHz.
(1) f = 955 MHz.
(1) f = 955 MHz.
(2) f = 925 MHz.
(2) f = 925 MHz.
Fig 4. 2-carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
Fig 5. 2-carrier W-CDMA adjacent channel power
ratio as function of average load power;
typical values
8. Test information
C11
V
DS
V
GS
C10
C9
R1
C12
C15
R2
C16
C13 C14
R3
F1
C7
input
50 Ω
output
50 Ω
C8
C1
C2
C3
C4
C6
C5
001aaf995
Fig 6. Test circuit for operation at 900 MHz
BLF6G10S-45_3
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 20 January 2010
5 of 10
BLF6G10S-45
NXP Semiconductors
Power LDMOS transistor
−
+
F1
R2
C16
C10
R1
C12 C13
C9
C11
C15
C14
C8
C2 C3
C1
C6
C7
C4
C5
BLF6G10S-45
INPUTBOARD
TP
BLF6G10S-45
OUTPUTBOARD
TP
001aaf996
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5
and thickness = 0.76 mm.
See Table 8 for list of components.
Fig 7. Component layout for 920 MHz and 960 MHz test circuit for 2-carrier W-CDMA
Table 8.
List of components (see Figure 6 and Figure 7).
All capacitors should be soldered vertically.
Component
Description
Value
Remarks
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[2]
C1
multilayer ceramic chip capacitor 3.0 pF
multilayer ceramic chip capacitor 1 pF
multilayer ceramic chip capacitor 6.2 pF
multilayer ceramic chip capacitor 1.8 pF
multilayer ceramic chip capacitor 1.0 pF
multilayer ceramic chip capacitor 6.8 pF
multilayer ceramic chip capacitor 6.8 pF
multilayer ceramic chip capacitor 68 pF
C2
C3
C4
C5
C6
C7
C8, C11, C14
C9, C10, C12, C13 multilayer ceramic chip capacitor 330 nF;
50 V
[2]
C15
multilayer ceramic chip capacitor 4.5 μF;
50 V
C16
F1
Electrolytic capacitor
Ferrite SMD bead
220 μF
-
Ferroxcube BDS 3/3/8.9-4S2
or equivalent
Q3
R1
BLF6G10S-45
SMD resistor
-
4.7 Ω;
0.1 W
R2
SMD resistor
6.8 Ω;
0.1 W
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] TDK or capacitor of same quality.
BLF6G10S-45_3
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 20 January 2010
6 of 10
BLF6G10S-45
NXP Semiconductors
Power LDMOS transistor
9. Package outline
Ceramic earless flanged package; 2 leads
SOT608B
D
A
F
3
D
A
1
U
1
c
1
U
2
H
E
E
1
2
w
0
A
b
Q
1
5 mm
scale
DIMENSIONS (mm dimensions are derived from the original inch dimensions)
UNIT
mm
A
b
c
D
D
E
E
F
H
Q
U
U
w
1
1
1
1
2
4.62 7.24 0.15 10.21 10.29 10.21 10.29 1.14 15.75 1.70 10.24 10.24
3.76 6.99 0.10 10.03 10.01 10.03 0.89 1.45 9.98
0.51
10.01
14.73
9.98
0.182 0.285 0.006 0.402 0.405 0.402 0.405 0.045 0.620 0.067 0.403 0.403
inch
0.020
0.148 0.275 0.004
0.395 0.394 0.395 0.035
0.057 0.393
0.580 0.393
0.394
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
06-12-06
09-08-26
SOT608B
Fig 8. Package outline SOT608B
BLF6G10S-45_3
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 20 January 2010
7 of 10
BLF6G10S-45
NXP Semiconductors
Power LDMOS transistor
10. Abbreviations
Table 9.
Abbreviations
Acronym
3GPP
CCDF
CW
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Waveform
DPCH
LDMOS
PAR
Dedicated Physical CHannel
Laterally Diffused Metal Oxide Semiconductor
Peak-to-Average power Ratio
PDPCH
RF
transmission Power of the Dedicated Physical CHannel
Radio Frequency
SMD
Surface-Mount Device
VSWR
W-CDMA
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
11. Revision history
Table 10. Revision history
Document ID
BLF6G10S-45_3
Modifications:
Release date
20100120
Data sheet status
Product data sheet
Change notice
Supersedes
BLF6G10S-45_2
-
• Section 1.1 “General description” lower frequency range extended to 700 MHz from 800 MHz.
• Section 1.2 “Features” lower frequency range extended to 700 MHz from 800 MHz.
• Section 1.3 “Applications” lower frequency range extended to 700 MHz from 800 MHz.
• Section 12 “Legal information” export control disclaimer added.
BLF6G10S-45_2
BLF6G10S-45_1
20090210
Product data sheet
-
BLF6G10S-45_1
20070223
Preliminary data sheet
-
-
BLF6G10S-45_3
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 20 January 2010
8 of 10
BLF6G10S-45
NXP Semiconductors
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF6G10S-45_3
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 20 January 2010
9 of 10
BLF6G10S-45
NXP Semiconductors
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
3
4
5
6
7
7.1
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 January 2010
Document identifier: BLF6G10S-45_3
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