BLF6G20-180PN [NXP]
Power LDMOS transistor; 功率LDMOS晶体管
| 型号： | BLF6G20-180PN |
| 厂家： | 
NXP |
| 描述： | Power LDMOS transistor |
| 文件： | 总11页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF6G20-180PN
Power LDMOS transistor
Rev. 03 — 30 March 2009
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1.
Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
VDS
(V)
32
PL(AV)
(W)
Gp
ηD
ACPR
(dBc)
−35[1]
(MHz)
(dB)
18
(%)
29.5
2-carrier W-CDMA
1805 to 1880
50
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a
supply voltage of 32 V and an IDq of 1600 mA:
N Average output power = 50 W
N Power gain = 18 dB (typ)
N Efficiency = 29.5 %
N ACPR = −35 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (1800 MHz to 2000 MHz)
I Internally matched for ease of use
I Qualified up to a supply voltage of 32 V
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G20-180PN
NXP Semiconductors
Power LDMOS transistor
1.3 Applications
I RF power amplifiers for W-CDMA base stations and multicarrier applications in the
1800 MHz to 2000 MHz frequency range
2. Pinning information
Table 2.
Pinning
Pin
1
Description
drain1
Simplified outline
Graphic symbol
1
2
1
2
drain2
5
3
gate1
3
5
4
3
4
4
gate2
[1]
5
source
2
sym117
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF6G20-180PN
-
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
SOT539A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
Unit
V
drain-source voltage
gate-source voltage
storage temperature
case temperature
junction temperature
-
65
VGS
−0.5 +13
V
Tstg
−65
+150 °C
Tcase
Tj
-
-
150
225
°C
°C
BLF6G20-180PN_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 30 March 2009
2 of 11
BLF6G20-180PN
NXP Semiconductors
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL(AV) = 50 W
0.45 K/W
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C per section; unless otherwise specified.
Symbol Parameter
Conditions
VGS = 0 V; ID = 0.5 mA
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
65
-
-
V
VGS(th)
VGSq
IDSS
gate-source threshold voltage VDS = 10 V; ID = 144 mA 1.575 1.9
gate-source quiescent voltage VDS = 32 V; ID = 800 mA 1.725 2.1
2.3
V
V
2.45
drain leakage current
VGS = 0 V
VDS = 28 V
-
-
-
-
3
5
-
µA
µA
A
VDS = 60 V
-
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
25
VDS = 10 V
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 7.2 A
-
-
-
-
300
-
nA
S
forward transconductance
10
0.1
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 5 A
0.165
Ω
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f1 = 1802.5 MHz; f2 = 1807.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz;
RF performance at VDS = 32 V; IDq = 1600 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter
Conditions
Min
Typ Max
19.2
−10 −6.5
29.5
−35 −33
Unit
dB
Gp
power gain
PL(AV) = 50 W
PL(AV) = 50 W
PL(AV) = 50 W
PL(AV) = 50 W
16.8 18
RLin
ηD
input return loss
-
dB
drain efficiency
26
-
-
%
ACPR
adjacent channel power ratio
dBc
Table 8.
Application information
Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f1 = 1872.5 MHz; f2 = 1877.5 MHz; RF performance at VDS = 32 V;
IDq = 1600 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter
Conditions
Min Typ Max Unit
4.1 4.3 dB
PARO
output peak-to-average ratio PL(AV) = 115 W;
-
at 0.01 % probability on CCDF
BLF6G20-180PN_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 30 March 2009
3 of 11
BLF6G20-180PN
NXP Semiconductors
Power LDMOS transistor
7.1 Ruggedness in class-AB operation
The BLF6G20-180PN is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 1600 mA; PL = 180 W (CW); f = 1880 MHz.
001aai017
20
60
G
η
D
p
(dB)
(%)
G
p
18
40
η
D
16
14
20
0
200
(W)
0
40
80
120
160
P
L(AV)
VDS = 32 V; IDq = 1600 mA; f = 1880 MHz.
Fig 1. One-tone CW power gain and drain efficiency as function of average load power;
typical values
001aai018
001aai019
22
50
−10
G
η
D
p
(dB)
(%)
IMD
(dBc)
20
40
IMD3
G
p
−30
18
16
14
12
30
20
10
0
η
IMD5
IMD7
D
−50
−70
0
100
200
300
0
100
200
300
P
(W)
P
(W)
L(PEP)
L(PEP)
VDS = 32 V; IDq = 1600 mA; f1 = 1880 MHz;
f2 = 1880.1 MHz.
VDS = 32 V; IDq = 1600 mA; f1 = 1880 MHz;
f2 = 1880.1 MHz.
Fig 2. Two-tone CW power gain and drain efficiency
as function of peak envelope load power;
typical values
Fig 3. Two-tone intermodulation distortion as a
function of peak envelope load power; typical
values
BLF6G20-180PN_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 30 March 2009
4 of 11
BLF6G20-180PN
NXP Semiconductors
Power LDMOS transistor
001aai020
001aai021
22
40
−20
G
(dB)
η
(%)
ACPR
(dBc)
p
D
20
30
−30
−40
−50
−60
G
p
18
16
14
20
10
0
η
D
0
20
40
60
0
20
40
60
P
(W)
P (W)
L
L
VDS = 32 V; IDq = 1600 mA; f1 = 1872.5 MHz;
f2 = 1877.5 MHz; carrier spacing 5 MHz.
VDS = 32 V; IDq = 1600 mA; f1 = 1872.5 MHz;
f2 = 1877.5 MHz; carrier spacing 5 MHz.
Fig 4. 2-carrier W-CDMA power gain and drain
efficiency as function of load power; typical
values
Fig 5. 2-carrier W-CDMA adjacent channel power
ratio as a function of load power; typical
values
001aai022
001aai023
22
40
−20
ACPR,
IMD3
(dBc)
G
(dB)
η
D
(%)
p
20
30
−30
IMD3
G
p
18
16
14
20
10
0
−40
η
D
ACPR
−50
−60
0
20
40
60
0
20
40
60
P
(W)
P (W)
L
L
VDS = 32 V; IDq = 1600 mA; f1 = 1867.5 MHz;
f2 = 1877.5 MHz; carrier spacing 10 MHz.
VDS = 32 V; IDq = 1600 mA; f1 = 1867.5 MHz;
f2 = 1877.5 MHz; carrier spacing 10 MHz.
Fig 6. 2-carrier W-CDMA power gain and drain
efficiency as function of load power; typical
values
Fig 7. 2-carrier W-CDMA adjacent channel power
ratio and third order intermodulation distortion
as function of load power; typical values
BLF6G20-180PN_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 30 March 2009
5 of 11
BLF6G20-180PN
NXP Semiconductors
Power LDMOS transistor
8. Test information
C3
C9
C13
C5
C14
C11
R3
input
output
50 Ω
50 Ω
C1
C6
R1
C7
R2
C2
C8
C10
C12
C4
001aai024
See Table 9 for list of components.
Fig 8. Test circuit for operation at 1805 MHz and 1880 MHz
BLF6G20-180PN_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 30 March 2009
6 of 11
BLF6G20-180PN
NXP Semiconductors
Power LDMOS transistor
C14
C5
C13
C11
R3
C3 C9
C6
R1
C1
C7
INPUT
R2
C2 C8
R1
C10 C12 C4
TB
OUTPUT
R1
TB
001aai025
Striplines are on a double copper-clad Rogers R04350 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm.
See Table 9 for list of components.
Fig 9. Component layout for 1805 MHz and 1880 MHz test circuit
Table 9.
List of components
For test circuit, see Figure 8 and Figure 9.
Component
C1
Description
Value
Remarks
[1]
[1]
[2]
[3]
ATC multilayer ceramic chip capacitor
ATC multilayer ceramic chip capacitor
ATC multilayer ceramic chip capacitor
ATC multilayer ceramic chip capacitor
TDK multilayer ceramic chip capacitor
AVX multilayer ceramic chip capacitor
electrolytic capacitor
6.2 pF
16 pF
C2, C3
C4, C5, C6
C7
18 pF
1.1 pF
4.7 µF
220 nF
100 µF; 63 V
33 Ω
C8, C9, C10, C11
C12, C13
C14
[2]
R1
chip resistor
R2, R3
chip resistor
8.2 Ω
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] American Technical Ceramics type 180R or capacitor of same quality.
[3] American Technical Ceramics type 100A or capacitor of same quality.
BLF6G20-180PN_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 30 March 2009
7 of 11
BLF6G20-180PN
NXP Semiconductors
Power LDMOS transistor
9. Package outline
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D
1
U
B
1
q
C
w
H
M
M
C
2
1
c
1
2
4
E
E
1
p
H
U
2
5
w
M
M
M
B
A
1
L
3
A
w
b
M
3
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
e
E
E
F
H
H
L
p
Q
q
U
U
w
w
w
3
UNIT
1
1
1
1
2
1
2
11.81
11.56
3.30 2.31
3.05 2.01
5.33
3.96
31.55 31.52
30.94 30.96
9.50 9.53 1.75 17.12 25.53 3.73
9.30 9.27 1.50 16.10 25.27 2.72
41.28 10.29
41.02 10.03
0.15
0.08
35.56
1.400
0.25 0.51 0.25
0.010 0.020 0.010
mm
13.72
0.465
0.455
0.130 0.091
0.120 0.079
0.210
0.156
1.242 1.241
1.218 1.219
0.374 0.375 0.069 0.674 1.005 0.147
0.366 0.365 0.059 0.634 0.995 0.107
1.625 0.405
1.615 0.395
0.006
0.003
inches
0.540
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
99-12-28
00-03-03
SOT539A
Fig 10. Package outline SOT539A
BLF6G20-180PN_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 30 March 2009
8 of 11
BLF6G20-180PN
NXP Semiconductors
Power LDMOS transistor
10. Abbreviations
Table 10. Abbreviations
Acronym
3GPP
CCDF
CW
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
DPCH
IMD
Dedicated Physical CHannel
InterModulation Distortion
LDMOS
LDMOST
PAR
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
PDPCH
RF
transmission Power of the Dedicated Physical CHannel
Radio Frequency
VSWR
W-CDMA
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
11. Revision history
Table 11. Revision history
Document ID
Release date
Data sheet status
Product data sheet
Preliminary data sheet
Change notice
Supersedes
BLF6G20-180PN_3
BLF6G20-180PN_2
Modifications:
20090330
20090121
-
-
BLF6G20-180PN_2
BLF6G20-180PN_1
• Table 7 on page 3: Maximum adjacent channel power ratio changed
• Table 8 on page 3: Minimum output peak-to-average ratio changed
BLF6G20-180PN_1
20080428
Objective data sheet
-
-
BLF6G20-180PN_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 30 March 2009
9 of 11
BLF6G20-180PN
NXP Semiconductors
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF6G20-180PN_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 30 March 2009
10 of 11
BLF6G20-180PN
NXP Semiconductors
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 4
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
3
4
5
6
7
7.1
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 30 March 2009
Document identifier: BLF6G20-180PN_3
相关型号：
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