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BLF6G27-100,112 [NXP]

WiMAX power LDMOS transistor, SOT502A Package, Standard Marking, IC'S Tube - DSC Bulk Pack;
BLF6G27-100,112
型号： BLF6G27-100,112
厂家： NXP    NXP
描述：

WiMAX power LDMOS transistor, SOT502A Package, Standard Marking, IC'S Tube - DSC Bulk Pack
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BLF6G27-100; BLF6G27LS-100  
WiMAX power LDMOS transistor  
Rev. 02 — 8 July 2010  
Product data sheet  
1. Product profile  
1.1 General description  
100 W LDMOS power transistor for base station applications at frequencies from  
2500 MHz to 2700 MHz.  
Table 1.  
Typical performance  
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.  
Mode of operation  
f
VDS PL(AV) Gp  
ηD ACPR885k  
ACPR1980k  
(dBc)  
ACPR5M ACPR10M  
(MHz)  
(V)  
(W)  
(dB) (%) (dBc)  
(dBc)  
(dBc)  
BLF6G27-100  
1-carrier W-CDMA [1]  
1-carrier N-CDMA [2]  
BLF6G27LS-100  
2500 to 2700  
2500 to 2700  
28  
28  
14  
14  
16.5 23  
-
-
−40  
−59  
17  
23 −50 [3]  
−65 [3]  
-
-
1-carrier W-CDMA [1]  
1-carrier N-CDMA [2]  
2500 to 2700  
2500 to 2700  
28  
28  
14  
14  
17  
17  
23  
-
-
−41  
−60  
23 −50 [3]  
−65 [3]  
-
-
[1] Signal is a one carrier, TM1 W-CDMA signal with 64 DPCH and 100 % clipping. PAR is 9.65 dB at 0.01 % probability on CCDF.  
[2] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on the  
CCDF. Channel bandwidth is 1.2288 MHz.  
[3] Measured within 30 kHz bandwidth.  
1.2 Features and benefits  
„ Typical 1-carrier W-CDMA performance (single carrier W-CDMA TM1 with 64 DPCH  
and 100 % clipping; PAR = 9.65 dB at 0.01 % probability on the CCDF; channel  
bandwidth is 3.84 MHz) at a frequency of 2500 MHz, 2600 MHz and 2700 MHz, a  
supply voltage of 28 V and an IDq of 900 mA:  
‹ Average output power = 14 W  
‹ Power gain = 17 dB  
‹ Drain efficiency = 23 %  
‹ ACPR5M = −41 dBc  
„ Typical 1-carrier N-CDMA performance (single carrier IS-95 with pilot, paging, sync  
and 6 traffic channels [Walsh codes 8 to 13]. PAR = 9.7 dB at 0.01 % probability on the  
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz, 2600 MHz  
and 2700 MHz, a supply voltage of 28 V and an IDq of 900 mA:  
‹ Average output power = 14 W  
‹ Power gain = 17 dB  
‹ Drain efficiency = 23 %  
‹ ACPR885k = −50 dBc (within 30 kHz bandwidth)  
 
 
 
 
 
 
 
BLF6G27-100; BLF6G27LS-100  
NXP Semiconductors  
WiMAX power LDMOS transistor  
„ Easy power control  
„ Integrated ESD protection  
„ Excellent ruggedness  
„ High efficiency  
„ Excellent thermal stability  
„ Designed for broadband operation (2500 MHz to 2700 MHz)  
„ Internally matched for ease of use  
1.3 Applications  
„ RF power amplifiers for base stations and multicarrier applications in the  
2500 MHz to 2700 MHz frequency range  
2. Pinning information  
Table 2.  
Pin  
BLF6G27-100 (SOT502A)  
Pinning  
Description  
Simplified outline  
Graphic symbol  
1
2
3
drain  
gate  
1
1
3
[1]  
source  
2
2
3
sym112  
BLF6G27LS-100 (SOT502B)  
1
2
3
drain  
gate  
1
2
1
3
[1]  
source  
2
3
sym112  
[1] Connected to flange.  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name Description  
Version  
BLF6G27-100  
-
flanged LDMOST ceramic package; 2 mounting holes;  
2 leads  
SOT502A  
BLF6G27LS-100 -  
earless flanged LDMOST ceramic package; 2 leads  
SOT502B  
BLF6G27-100_BLF6G27LS-100  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 8 July 2010  
2 of 14  
 
 
 
 
BLF6G27-100; BLF6G27LS-100  
NXP Semiconductors  
WiMAX power LDMOS transistor  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
VGS  
ID  
Parameter  
Min  
Max  
65  
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
-
−0.5  
+13  
29  
V
-
A
Tstg  
Tj  
storage temperature  
junction temperature  
−65  
+150  
200  
°C  
°C  
-
5. Thermal characteristics  
Table 5.  
Thermal characteristics  
Symbol Parameter  
Conditions  
Type  
Typ  
Unit  
Rth(j-case) thermal resistance from Tcase = 80 °C; PL = 100 W BLF6G27-100  
0.68 K/W  
junction to case  
BLF6G27LS-100  
0.5  
K/W  
6. Characteristics  
Table 6.  
Characteristics  
Tj = 25 °C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
V(BR)DSS drain-source breakdown  
voltage  
VGS = 0 V; ID = 0.5 mA  
65  
-
-
V
VGS(th)  
IDSS  
gate-source threshold voltage VDS = 10 V; ID = 150 mA 1.4  
2
2.4  
5
V
drain leakage current  
drain cut-off current  
VGS = 0 V; VDS = 28 V  
-
-
μA  
A
IDSX  
VGS = VGS(th) + 3.75 V;  
VDS = 10 V  
22.3  
27  
-
IGSS  
gfs  
gate leakage current  
VGS = 11 V; VDS = 0 V  
VDS = 10 V; ID = 5.25 A  
-
-
-
-
450  
-
nA  
S
forward transconductance  
10.5  
0.1  
RDS(on) drain-source on-state  
resistance  
VGS = VGS(th) + 3.75 V;  
ID = 5.25 A  
0.16  
Ω
Crs  
feedback capacitance  
VGS = 0 V; VDS = 28 V;  
f = 1 MHz  
-
2.4  
-
pF  
BLF6G27-100_BLF6G27LS-100  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 8 July 2010  
3 of 14  
 
 
 
BLF6G27-100; BLF6G27LS-100  
NXP Semiconductors  
WiMAX power LDMOS transistor  
7. Application information  
Table 7.  
Application information  
Mode of operation: 1-carrier W-CDMA; single carrier W-CDMA TM1 with 64 DPCH and 100 %  
clipping; PAR = 9.65 dB at 0.01 % probability on the CCDF; carrier channel bandwidth is 3.84 MHz;  
f1 = 2500 MHz; f2 = 2600 MHz, f3 = 2700 MHz; RF performance at VDS = 28 V; IDq = 900 mA;  
Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit.  
Symbol  
Parameter  
Conditions  
Min Typ Max Unit  
Gp  
power gain  
PL(AV) = 14 W  
BLF6G27-100  
BLF6G27LS-100  
PL(AV) = 14 W  
PL(AV) = 14 W  
PL(AV) = 14 W  
BLF6G27-100  
BLF6G27LS-100  
PL(AV) = 14 W  
BLF6G27-100  
BLF6G27LS-100  
14.8 16.5  
-
-
dB  
dB  
dB  
%
15  
-
17  
RLin  
input return loss  
drain efficiency  
−10 −6  
23  
ηD  
20  
-
[1]  
[1]  
ACPR5M  
adjacent channel power ratio  
(5 MHz)  
-
-
−40 −36 dBc  
−41 −37 dBc  
ACPR10M adjacent channel power ratio  
(10 MHz)  
-
-
−59 −56 dBc  
−60 −57 dBc  
[1] ACPR measured in 3.84 MHz channel bandwidth at ±5 MHz and ±10 MHz.  
7.1 Ruggedness in class-AB operation  
The BLF6G27-100 and BLF6G27LS-100 are capable of withstanding a load mismatch  
corresponding to VSWR = 10 : 1 through all phases under the following conditions:  
V
DS = 28 V; IDq = 900 mA; PL = 100 W (CW); f = 2500 MHz.  
BLF6G27-100_BLF6G27LS-100  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 8 July 2010  
4 of 14  
 
 
 
 
BLF6G27-100; BLF6G27LS-100  
NXP Semiconductors  
WiMAX power LDMOS transistor  
7.2 Single carrier W-CDMA performance  
001aal779  
001aal780  
19  
50  
−20  
G
(dB)  
η
ACPR  
(dBc)  
p
D
(%)  
(2)  
(3)  
(1)  
18  
40  
−30  
−40  
−50  
−60  
−70  
(3)  
(2)  
(1)  
G
p
(1)  
(2)  
(3)  
17  
16  
15  
14  
30  
20  
10  
0
ACPR  
5M  
(3)  
(2)  
(1)  
η
D
ACPR  
10M  
2
2
1
10  
10  
1
10  
10  
P
L(AV)  
(W)  
P
L(AV)  
(W)  
VDS = 28 V; IDq = 900 mA; single carrier W-CDMA TM1  
with 64 DPCH and 100 % clipping; PAR = 9.65 dB at  
0.01 % probability; channel bandwidth = 3.84 MHz.  
VDS = 28 V; IDq = 900 mA; single carrier W-CDMA TM1  
with 64 DPCH and 100 % clipping; PAR = 9.65 dB at  
0.01 % probability; channel bandwidth = 3.84 MHz.  
(1) f = 2500 MHz  
(2) f = 2600 MHz  
(3) f = 2700 MHz  
(1) f = 2500 MHz  
(2) f = 2600 MHz  
(3) f = 2700 MHz  
Fig 1. Power gain and drain efficiency as a function  
of average output power; typical values  
Fig 2. ACPR at 5 MHz and at 10 MHz as a function of  
average output power; typical values  
BLF6G27-100_BLF6G27LS-100  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 8 July 2010  
5 of 14  
 
BLF6G27-100; BLF6G27LS-100  
NXP Semiconductors  
WiMAX power LDMOS transistor  
7.3 Single carrier W-CDMA broadband performance at 14 W average  
power  
001aal781  
001aal782  
19  
30  
−35  
G
(dB)  
η
D
(%)  
p
ACPR  
(dBc)  
18  
28  
ACPR  
5M  
G
p
−45  
−55  
−65  
17  
16  
15  
14  
26  
24  
22  
20  
η
D
ACPR  
10M  
2500  
2550  
2600  
2650  
2700  
2500  
2550  
2600  
2650  
2700  
f (MHz)  
f (MHz)  
VDS = 28 V; IDq = 900 mA; single carrier W-CDMA TM1  
with 64 DPCH and 100 % clipping; PAR = 9.65 dB at  
0.01 % probability; channel bandwidth = 3.84 MHz.  
VDS = 28 V; IDq = 900 mA; single carrier W-CDMA TM1  
with 64 DPCH and 100 % clipping; PAR = 9.65 dB at  
0.01 % probability; channel bandwidth = 3.84 MHz.  
Fig 3. Power gain and drain efficiency as a function  
of frequency; typical values  
Fig 4. ACPR at 5 MHz and at 10 MHz as a function of  
frequency; typical values  
BLF6G27-100_BLF6G27LS-100  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 8 July 2010  
6 of 14  
 
BLF6G27-100; BLF6G27LS-100  
NXP Semiconductors  
WiMAX power LDMOS transistor  
7.4 IS-95 performance  
001aal783  
001aal784  
19  
50  
−30  
G
(dB)  
η
ACPR  
(dBc)  
p
D
(%)  
(2)  
(1)  
(3)  
(1)  
(2)  
(3)  
18  
40  
−40  
−50  
−60  
−70  
−80  
G
p
17  
16  
15  
14  
30  
20  
10  
0
(1)  
(1)  
(2)  
(3)  
ACPR  
855k  
(2)  
(3)  
η
D
ACPR  
1980k  
2
2
1
10  
10  
1
10  
10  
P
L(AV)  
(W)  
P
L(AV)  
(W)  
VDS = 28 V; IDq = 900 mA; IS-95 with pilot, paging, sync  
and 6 traffic channels (Walsh codes 8 to 13);  
PAR = 9.7 dB at 0.01 % probability on the CCDF;  
channel bandwidth = 1.2288 MHz.  
VDS = 28 V; IDq = 900 mA; IS-95 with pilot, paging, sync  
and 6 traffic channels (Walsh codes 8 to 13);  
PAR = 9.7 dB at 0.01 % probability on the CCDF;  
channel bandwidth = 1.2288 MHz.  
(1) f = 2500 MHz  
(2) f = 2600 MHz  
(3) f = 2700 MHz  
(1) f = 2500 MHz  
(2) f = 2600 MHz  
(3) f = 2700 MHz  
Fig 5. Power gain and drain efficiency as a function  
of average output power; typical values  
Fig 6. ACPR at 885 kHz and at 1980 kHz as a function  
of average output power; typical values  
BLF6G27-100_BLF6G27LS-100  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 8 July 2010  
7 of 14  
 
BLF6G27-100; BLF6G27LS-100  
NXP Semiconductors  
WiMAX power LDMOS transistor  
7.5 IS-95 broadband performance at 14 W average power  
001aal785  
001aal786  
19  
30  
−40  
G
(dB)  
η
D
(%)  
p
ACPR  
(dBc)  
18  
28  
ACPR  
G
855k  
p
−50  
−60  
−70  
17  
16  
15  
14  
26  
24  
22  
20  
η
D
ACPR  
1980k  
2500  
2550  
2600  
2650  
2700  
2500  
2550  
2600  
2650  
2700  
f (MHz)  
f (MHz)  
VDS = 28 V; IDq = 900 mA; IS-95 with pilot, paging, sync  
and 6 traffic channels (Walsh codes 8 to 13);  
PAR = 9.7 dB at 0.01 % probability on the CCDF;  
channel bandwidth = 1.2288 MHz.  
VDS = 28 V; IDq = 900 mA; IS-95 with pilot, paging, sync  
and 6 traffic channels (Walsh codes 8 to 13);  
PAR = 9.7 dB at 0.01 % probability on the CCDF;  
channel bandwidth = 1.2288 MHz.  
Fig 7. Power gain and drain efficiency as a function  
of frequency; typical values  
Fig 8. ACPR at 885 kHz and at 1980 kHz as a function  
of frequency; typical values  
BLF6G27-100_BLF6G27LS-100  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 8 July 2010  
8 of 14  
 
BLF6G27-100; BLF6G27LS-100  
NXP Semiconductors  
WiMAX power LDMOS transistor  
8. Package outline  
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads  
SOT502A  
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
H
U
1
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm  
scale  
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT  
1
1
1
2
1
12.83  
12.57  
3.38  
3.12  
1.70  
1.45  
4.72  
3.43  
20.02 19.96 9.50  
19.61 19.66 9.30  
9.53  
9.25  
1.14 19.94 5.33  
0.89 18.92 4.32  
34.16 9.91  
33.91 9.65  
0.15  
0.08  
27.94  
1.100  
0.25  
0.01  
0.51  
0.02  
mm  
0.505  
0.495  
0.133 0.067  
0.123 0.057  
0.186  
0.135  
0.788 0.786 0.374 0.375 0.045 0.785 0.210  
0.772 0.774 0.366 0.364 0.035 0.745 0.170  
1.345 0.390  
1.335 0.380  
0.006  
0.003  
inches  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
99-12-28  
03-01-10  
SOT502A  
Fig 9. Package outline SOT502A  
BLF6G27-100_BLF6G27LS-100  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 8 July 2010  
9 of 14  
 
BLF6G27-100; BLF6G27LS-100  
NXP Semiconductors  
WiMAX power LDMOS transistor  
Earless flanged LDMOST ceramic package; 2 leads  
SOT502B  
D
A
F
3
D
D
1
c
U
1
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm  
scale  
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
UNIT  
1
1
1
2
2
12.83  
12.57  
1.70  
1.45  
4.72  
3.43  
20.02 19.96 9.50  
19.61 19.66 9.30  
9.53  
9.25  
1.14 19.94 5.33  
0.89 18.92 4.32  
20.70 9.91  
20.45 9.65  
0.15  
0.08  
0.25  
mm  
0.505  
0.495  
0.067  
0.057  
0.186  
0.135  
0.788 0.786 0.374 0.375 0.045 0.785 0.210  
0.772 0.774 0.366 0.364 0.035 0.745 0.170  
0.815 0.390  
0.805 0.380  
0.006  
0.003  
0.010  
inches  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
03-01-10  
07-05-09  
SOT502B  
Fig 10. Package outline SOT502B  
BLF6G27-100_BLF6G27LS-100  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 8 July 2010  
10 of 14  
BLF6G27-100; BLF6G27LS-100  
NXP Semiconductors  
WiMAX power LDMOS transistor  
9. Abbreviations  
Table 8.  
Abbreviations  
Acronym  
CCDF  
CW  
Description  
Complementary Cumulative Distribution Function  
Continuous Wave  
DPCH  
ESD  
Dedicated Physical CHannel  
ElectroStatic Discharge  
FCH  
Frame Control Header  
FFT  
Fast Fourier Transform  
IBW  
Instantaneous BandWidth  
IS-95  
Interim Standard 95  
LDMOS  
N-CDMA  
PAR  
Laterally Diffused Metal-Oxide Semiconductor  
Narrowband Code Division Multiple Access  
Peak-to-Average power Ratio  
Partial Usage of SubChannels  
Radio Frequency  
PUSC  
RF  
TM1  
Test Model 1  
VSWR  
W-CDMA  
WCS  
Voltage Standing-Wave Ratio  
Wideband Code Division Multiple Access  
Wireless Communications Service  
Worldwide interoperability for Microwave Access  
WiMAX  
10. Revision history  
Table 9.  
Document ID  
BLF6G27-100_BLF6G27LS-100 v.2 20100708  
Revision history  
Release date Data sheet status  
Product data sheet  
Change notice Supersedes  
-
BLF6G27-100_  
BLF6G27LS-100_1  
Modifications:  
• Data sheet status change to Product data sheet.  
• Table 1 on page 1: A distinction has been made between BLF6G27-100 and  
BLF6G27LS-100  
• Table 7 on page 4: A distinction has been made between BLF6G27-100 and  
BLF6G27LS-100  
BLF6G27-100_BLF6G27LS-100_1 20100503  
Preliminary data sheet  
-
-
BLF6G27-100_BLF6G27LS-100  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 8 July 2010  
11 of 14  
 
 
BLF6G27-100; BLF6G27LS-100  
NXP Semiconductors  
WiMAX power LDMOS transistor  
11. Legal information  
11.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
malfunction of an NXP Semiconductors product can reasonably be expected  
11.2 Definitions  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
11.3 Disclaimers  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
BLF6G27-100_BLF6G27LS-100  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 8 July 2010  
12 of 14  
 
 
 
 
BLF6G27-100; BLF6G27LS-100  
NXP Semiconductors  
WiMAX power LDMOS transistor  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
non-automotive qualified products in automotive equipment or applications.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
11.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
12. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BLF6G27-100_BLF6G27LS-100  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 8 July 2010  
13 of 14  
 
 
BLF6G27-100; BLF6G27LS-100  
NXP Semiconductors  
WiMAX power LDMOS transistor  
13. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
1.1  
1.2  
1.3  
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
7
Application information. . . . . . . . . . . . . . . . . . . 4  
Ruggedness in class-AB operation . . . . . . . . . 4  
Single carrier W-CDMA performance . . . . . . . . 5  
Single carrier W-CDMA broadband  
7.1  
7.2  
7.3  
performance at 14 W average power . . . . . . . . 6  
IS-95 performance . . . . . . . . . . . . . . . . . . . . . . 7  
IS-95 broadband performance at 14 W  
7.4  
7.5  
average power . . . . . . . . . . . . . . . . . . . . . . . . . 8  
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11  
9
10  
11  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
11.1  
11.2  
11.3  
11.4  
12  
13  
Contact information. . . . . . . . . . . . . . . . . . . . . 13  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2010.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 8 July 2010  
Document identifier: BLF6G27-100_BLF6G27LS-100  
 

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