BLF7G15LS-200,112 [NXP]
BLF7G15LS-200;
| 型号： | BLF7G15LS-200,112 |
| 厂家： | 
NXP |
| 描述： | BLF7G15LS-200 |
| 文件： | 总11页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF7G15LS-200
Power LDMOS transistor
Rev. 3 — 22 July 2011
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
1450 MHz to 1550 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS
(V)
28
PL(AV)
(W)
Gp
D
(%) (dBc)
29
35[1]
ACPR
(MHz)
(mA)
1600
(dB)
19.5
2-carrier W-CDMA
1476 to 1511
50
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier.
Carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (1450 MHz to 1550 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1450 MHz to 1550 MHz frequency range
BLF7G15LS-200
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
drain
Simplified outline
Symbol
1
2
1
3
2
gate
3
[1]
3
source
2
sym112
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
SOT502B
BLF7G15LS-200
-
earless flanged LDMOST ceramic package; 2 leads
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
drain current
-
0.5 +13
V
-
56
A
Tstg
Tj
storage temperature
junction temperature
65
+150 C
200 C
-
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
Rth(j-c)
thermal resistance from junction to case
Tcase = 80 C; PL = 50 W;
0.30 K/W
VDS = 28 V; IDq = 1600 mA
6. Characteristics
Table 6.
Characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA
Conditions
Min Typ
Max Unit
65
VDS = 10 V; ID = 270 mA 1.5
VGS = 0 V; VDS = 28 V
67
1.9
-
-
V
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
2.3
4.2
V
-
A
BLF7G15LS-200
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2011
2 of 11
BLF7G15LS-200
NXP Semiconductors
Power LDMOS transistor
Table 6.
Characteristics …continued
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Max Unit
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
42
49
-
A
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 13.5 A
-
-
420
nA
S
forward transconductance
17
19.3 19.7
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 9.45 A
0.012 0.048 0.093
7. Test information
Table 7.
Functional test information
Mode of operation: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 64 DPCH; f1 = 1473.5 MHz; f2 = 1478.5 MHz; f3 = 1508.5 MHz; f4 = 1513.5 MHz;
RF performance at VDS = 28 V; IDq = 1600 mA; Tcase = 25 C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
PL(AV)
Gp
Parameter
Conditions
Min Typ
50
18.3 19.5
Max Unit
average output power
power gain
-
-
-
W
PL(AV) = 50 W
PL(AV) = 50 W
PL(AV) = 50 W
PL(AV) = 50 W
dB
RLin
input return loss
drain efficiency
-
8
5.5 dB
D
27
-
29
-
%
ACPR
adjacent channel power ratio
35
33
dBc
Table 8.
PAR performance
Mode of operation: 1-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 64 DPCH; f1 = 1511 MHz; RF performance at VDS = 28 V; IDq = 1600 mA; Tcase = 25 C;
unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter
PARO output peak-to-average ratio
Conditions
Min Typ Max Unit
PL(AV) = 100 W at 0.01 %
probability on CCDF
4.2 4.6
-
dB
7.1 Ruggedness in class-AB operation
The BLF7G15LS-200 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 1600 mA; PL = 150 W (CW); f = 1476 MHz to 1511 MHz.
7.2 Impedance information
Table 9.
Dq = 1600 mA; main transistor VDS = 28 V.
ZS and ZL defined in Figure 1.
Typical impedance information
I
f
ZS
ZL
(MHz)
()
()
1410
1480
1560
0.74 j1.52
0.65 j1.7
0.61 j1.74
3.5 j1.7
4.0 j0.74
3.8 + j0.5
BLF7G15LS-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2011
3 of 11
BLF7G15LS-200
NXP Semiconductors
Power LDMOS transistor
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
7.3 Graphs
014aab253
22
60
(1)
(2)
Gain
(dB)
η
(%)
16
40
20
10
4
0
0
100
200
300
P
(W)
L
VDS = 28 V; IDq = 1600 mA; f = 1511 MHz.
(1) gain
(2) efficiency
Fig 2. One-tone CW power gain and drain efficiency as function of load power;
typical values
BLF7G15LS-200
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2011
4 of 11
BLF7G15LS-200
NXP Semiconductors
Power LDMOS transistor
014aab254
014aab255
22
60
0
(1)
IMD
(dBc)
Gain
(dB)
η
(%)
−20
(1)
(2)
16
40
(2)
−40
−60
−80
(3)
10
20
4
0
0
50
100
150
0
50
100
150
P
L(AV)
(W)
P
(W)
L(AV)
VDS = 28 V; IDq = 1600 mA; f = 1511 MHz;
tone spacing 0.1 MHz.
VDS = 28 V; IDq = 1600 mA; f = 1511 MHz;
tone spacing 0.1 MHz.
(1) gain
(2) efficiency
(1) IMD3
(2) IMD5
(3) IMD7
Fig 3. Two-tone CW power gain and drain efficiency
as function of average load power;
typical values
Fig 4. Two-tone intermodulation distortion as a
function of average load power; typical values
014aab256
014aab257
21
50
−15
Gain
(dB)
η
(%)
ACPR
(dBc)
20
40
−25
−35
−45
(1)
(2)
19
18
17
30
20
10
0
50
100
150
0
50
100
150
P
(W)
P (W)
L
L
VDS = 28 V; IDq = 1600 mA; f = 1511 MHz;
carrier spacing 5 MHz.
VDS = 28 V; IDq = 1600 mA; f = 1511 MHz;
carrier spacing 5 MHz.
(1) gain
(2) efficiency
Fig 5. 2-carrier W-CDMA power gain and drain
efficiency as function of load power;
typical values
Fig 6. 2-carrier W-CDMA adjacent channel power
ratio as function of load power 5 MHz
frequency offset; typical values
BLF7G15LS-200
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2011
5 of 11
BLF7G15LS-200
NXP Semiconductors
Power LDMOS transistor
7.4 Test circuit
BLF7G15L(S)-200
Input Circuit
RO4350 30 Mil
NXP
C8
R1
−
C3
+
C11
(1)
C5
C10
BLF7G15L-200
Output Circuit
RO4350 30 Mil
NXP
C2
C1
BLF7G15L-200
Output Circuit
RO4350 30 Mil
NXP
C7
BLF7G15L(S)-200
Input Circuit
C6
RO4350 30 Mil
NXP
C9
C4
014aab258
(1) C5 should be mounted under C11.
Rogers RO4350 Printed-Circuit Board (PCB) with r = 3.48 and thickness = 0.765 mm (30 mil).
See Table 10 for list of components. The drawing is not to scale.
The vias can be as a reference to place components.
The above layout shows the test circuit used to measure devices in production. The RF Power and Bas-Station group can
provide a more appropriate application demonstration for specific customer needs.
Fig 7. Component layout
Table 10. List of components
See Figure 7 for test circuit.
Component
C1
Description
Value
Remarks
ATC 800B
ATC 800A
Murata
multi layer ceramic chip capacitor
multi layer ceramic chip capacitor
multi layer ceramic chip capacitor
multi layer ceramic chip capacitor
electrolytic capacitor
10 pF
C2, C7, C10
C3, C4, C5, C6
C8, C9
47 pF
10 F
36 pF
ATC 800B
C11
470 F; 63 V
15
R1
chip resistor
Philips 1206
BLF7G15LS-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2011
6 of 11
BLF7G15LS-200
NXP Semiconductors
Power LDMOS transistor
8. Package outline
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D
1
c
U
1
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
2
UNIT
1
1
1
2
12.83
12.57
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
20.70 9.91
20.45 9.65
0.15
0.08
0.25
mm
0.505
0.495
0.067
0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
0.815 0.390
0.805 0.380
0.006
0.003
0.010
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
03-01-10
07-05-09
SOT502B
Fig 8. Package outline SOT502B
BLF7G15LS-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2011
7 of 11
BLF7G15LS-200
NXP Semiconductors
Power LDMOS transistor
9. Abbreviations
Table 11. Abbreviations
Acronym
3GPP
CCDF
CW
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
DPCH
ESD
Dedicated Physical CHannel
ElectroStatic Discharge
LDMOS
LDMOST
PAR
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Peak-to-Average power Ratio
RF
Radio Frequency
VSWR
W-CDMA
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
10. Revision history
Table 12. Revision history
Document ID
Release date
20110722
Data sheet status
Change notice
Supersedes
BLF7G15LS-200 v.3
Modifications:
Product data sheet
-
BLF7G15LS-200 v.2
• The status of this data sheet has been changed to Product data sheet
BLF7G15LS-200 v.2
BLF7G15LS-200 v.1
20110301
Preliminary data sheet
-
BLF7G15LS-200 v.1
20100913
Preliminary data sheet
-
-
BLF7G15LS-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2011
8 of 11
BLF7G15LS-200
NXP Semiconductors
Power LDMOS transistor
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
11.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
11.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
BLF7G15LS-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2011
9 of 11
BLF7G15LS-200
NXP Semiconductors
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF7G15LS-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2011
10 of 11
BLF7G15LS-200
NXP Semiconductors
Power LDMOS transistor
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 2
7
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Impedance information. . . . . . . . . . . . . . . . . . . 3
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.1
7.2
7.3
7.4
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 22 July 2011
Document identifier: BLF7G15LS-200
相关型号：
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