BLF888,112 [NXP]
BLF888;BLF888
UHF power LDMOS transistor
Rev. 5 — 21 January 2011
Product data sheet
1. Product profile
1.1 General description
A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor is optimized for digital applications and can deliver 110 W
average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The
excellent ruggedness of this device makes it ideal for digital transmitter applications.
Table 1.
Application information
RF performance at VDS = 50 V in a common source 860 MHz narrowband test circuit unless
otherwise specified.
Mode of operation
f
PL(PEP) PL(AV) Gp
D
IMD3 IMDshldr
(dBc) (dBc)
(MHz)
(W)
500
-
(W)
250
110
(dB) (%)
2-Tone, class AB
DVB-T (8k OFDM)
f1 = 860; f2 = 860.1
858
19
19
46
31
32
-
-
31 [1]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq = 1.3 A:
Peak envelope power load power = 500 W
Power gain = 19 dB
Drain efficiency = 46 %
Third order intermodulation distortion = 32 dBc
DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq = 1.3 A:
Average output power = 110 W
Power gain = 19 dB
Drain efficiency = 31 %
Shoulder distance = 31 dBc (4.3 MHz from center frequency)
Integrated ESD protection
Advanced flange material for optimum thermal behavior and reliability
BLF888
NXP Semiconductors
UHF power LDMOS transistor
Excellent ruggedness
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Excellent reliability
Internal input matching for high gain and optimum broadband operation
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
2. Pinning information
Table 2.
Pinning
Pin
1
Description
drain1
Simplified outline
Graphic symbol
1
2
1
2
drain2
5
3
gate1
3
5
4
4
gate2
3
4
[1]
5
source
2
sym117
[1] Connected to flange.
3. Ordering information
Table 3.
Type number Package
Name Description
flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A
Ordering information
Version
BLF888
-
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
-
Max
104
+11
Unit
V
drain-source voltage
gate-source voltage
storage temperature
junction temperature
VGS
Tstg
0.5
65
-
V
+150
200
C
C
Tj
BLF888
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Product data sheet
Rev. 5 — 21 January 2011
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BLF888
NXP Semiconductors
UHF power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
Rth(j-c)
Thermal characteristics
Parameter
Conditions
Tcase = 80 C; PL(AV) = 110 W
Typ Unit
[1]
thermal resistance from junction to case
0.24 K/W
[1] Rth(j-c) is measured under RF conditions.
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C unless otherwise specified.
Symbol
V(BR)DSS
VGS(th)
IDSS
Parameter
Conditions
Min
Typ
-
Max Unit
[1]
[1]
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
VGS = 0 V; ID = 2.7 mA
104
-
V
VDS = 10 V; ID = 270 mA
VGS = 0 V; VDS = 50 V
1.4
1.9
-
2.4
V
-
-
-
-
-
-
-
-
2.8
A
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V; VDS = 10 V
VGS = 10 V; VDS = 0 V
43
-
-
IGSS
gate leakage current
280
nA
S
[1]
[1]
[2]
[2]
[2]
gfs
forward transconductance
drain-source on-state resistance
input capacitance
VDS = 10 V; ID = 13.5 A
17
105
205
65
2.2
-
-
-
-
-
RDS(on)
Ciss
VGS = VGS(th) + 3.75 V; ID = 9.5 A
VGS = 0 V; VDS = 50 V; f = 1 MHz
VGS = 0 V; VDS = 50 V; f = 1 MHz
VGS = 0 V; VDS = 50 V; f = 1 MHz
m
pF
pF
pF
Coss
output capacitance
Crss
reverse transfer capacitance
[1] ID is the drain current.
[2] Capacitance values without internal matching.
Table 7.
RF characteristics
Th = 25 C unless otherwise specified.
Symbol Parameter
2-Tone, class AB
Conditions
Min
Typ
Max Unit
VDS
drain-source voltage
-
50
1.3
-
-
V
IDq
quiescent drain current
peak envelope power load power
average output power
power gain
total device
-
-
A
PL(PEP)
PL(AV)
Gp
500
250
18
42
-
-
W
W
dB
%
-
-
19
46
32
-
D
drain efficiency
-
IMD3
third-order intermodulation distortion
28
dBc
DVB-T (8k OFDM)
VDS
IDq
drain-source voltage
-
50
1.3
-
-
-
-
-
V
quiescent drain current
average output power
power gain
total device
-
A
PL(AV)
Gp
110
18
W
dB
19
BLF888
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 21 January 2011
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BLF888
NXP Semiconductors
UHF power LDMOS transistor
Table 7.
RF characteristics …continued
Th = 25 C unless otherwise specified.
Symbol
D
Parameter
Conditions
Min
Typ
31
Max Unit
drain efficiency
28
-
-
%
[1]
[2]
IMDshldr
PAR
intermodulation distortion shoulder
peak-to-average ratio
31
8.3
28
dBc
dB
-
-
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
001aaj274
250
C
oss
(pF)
200
150
100
50
0
20
40
60
V
DS
(V)
VGS = 0 V; f = 1 MHz.
Fig 1. Output capacitance as a function of drain-source voltage; typical values per
section; capacitance value without internal matching
6.1 Ruggedness in class-AB operation
The BLF888 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: VDS = 50 V; f = 860 MHz at rated
power. Ruggedness is measured in the application circuit as described in Section 8.
BLF888
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Product data sheet
Rev. 5 — 21 January 2011
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BLF888
NXP Semiconductors
UHF power LDMOS transistor
7. Application information
7.1 Narrowband RF figures
7.1.1 2-Tone
001aak641
001aak642
0
22
60
50
40
30
20
10
0
22
G
η
G
p
IMD3
(dBc)
p
D
(%)
(dB)
(dB)
20
20
−10
−20
−30
−40
−50
−60
G
G
p
p
18
16
14
12
10
18
16
14
12
10
η
D
IMD3
0
100
200
300
400
0
100
200
300
400
P
(W)
P (W)
L
L
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 2. 2-Tone power gain and drain efficiency as
function of load power; typical values
Fig 3. 2-Tone power gain and third order
intermodulation distortion as function of
load power; typical values
BLF888
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Product data sheet
Rev. 5 — 21 January 2011
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BLF888
NXP Semiconductors
UHF power LDMOS transistor
7.1.2 DVB-T
001aak644
70
001aak643
12
PAR
(dB)
10
22
0
η
G
p
IMD
shldr
(dBc)
D
(%)
(dB)
50
20
−10
−20
−30
−40
−50
−60
η
D
G
p
8
6
4
2
0
30
18
16
14
12
10
PAR
10
IMD
shldr
−10
−30
−50
0
50
100
150
200
250
300
P
350
(W)
0
50
100
150
200
250
300
P
350
(W)
L
L
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 4. DVB-T power gain and intermodulation
distortion shoulder as function of load power;
typical values
Fig 5. DVB-T peak-to-average ratio and drain
efficiency as function of load power;
typical values
7.2 Broadband RF figures
7.2.1 2-Tone
001aak645
001aak646
24
22
20
18
16
14
12
10
8
60
55
50
45
40
35
30
25
20
24
−10
−15
−20
−25
−30
−35
−40
−45
−50
G
(dB)
η
G
p
(dB)
IMD3
(dBc)
p
D
(%)
22
G
p
G
p
20
18
16
14
12
10
8
η
D
IMD3
400
500
600
700
800
900
400
500
600
700
800
900
f (MHz)
f (MHz)
PL(AV) = 250 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
PL(AV) = 250 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
Fig 6. 2-Tone power gain and drain efficiency as
function of frequency; typical values
Fig 7. 2-Tone power gain and third order
intermodulation distortion as function of
frequency; typical values
BLF888
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 21 January 2011
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BLF888
NXP Semiconductors
UHF power LDMOS transistor
7.2.2 DVB-T
001aak647
001aak648
9.5
50
40
30
20
10
22
−10
G
p
PAR
(dB)
PAR
8.5
η
G
IMD
shldr
(dB)
D
(%)
p
(dB)
18
−20
η
D
7.5
6.5
5.5
14
10
6
−30
IMD
shldr
−40
−50
400
500
600
700
800
900
400
500
600
700
800
900
f (MHz)
f (MHz)
PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
Fig 8. DVB-T peak-to-average ratio and drain
efficiency as function of frequency;
typical values
Fig 9. DVB-T power gain and intermodulation
distortion shoulder as a function of frequency;
typical values
7.3 Impedance information
Z
L
drain
gate
Z
i
001aai086
Fig 10. Definition of transistor impedance
Table 8.
Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(PEP) = 600 W (DVB-T).
f
Zi
ZL
MHz
300
325
350
375
400
425
450
475
500
1.018 j1.350
1.045 j1.022
1.076 j0.722
1.110 j0.444
1.148 j0.183
1.190 + j0.064
1.238 + j0.299
1.291 + j0.526
1.351 + j0.746
5.565 + j0.747
5.435 + j0.752
5.303 + j0.746
5.167 + j0.730
5.030 + j0.704
4.892 + j0.668
4.754 + j0.622
4.617 + j0.567
4.481 + j0.504
BLF888
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 21 January 2011
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BLF888
NXP Semiconductors
UHF power LDMOS transistor
Table 8.
Typical push-pull impedance …continued
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(PEP) = 600 W (DVB-T).
f
Zi
ZL
MHz
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
1.417 + j0.961
1.492 + j1.171
1.577 + j1.378
1.672 + j1.582
1.779 + j1.783
1.901 + j1.983
2.039 + j2.180
2.196 + j2.373
2.376 + j2.563
2.581 + j2.745
2.817 + j2.918
3.087 + j3.076
3.395 + j3.212
3.746 + j3.317
4.142 + j3.377
4.583 + j3.374
5.063 + j3.288
5.566 + j3.094
6.064 + j2.770
6.514 + j2.299
4.346 + j0.432
4.214 + j0.353
4.084 + j0.266
3.958 + j0.173
3.834 + j0.074
3.713 j0.031
3.596 j0.142
3.482 j0.257
3.372 j0.377
3.266 j0.501
3.163 j0.628
3.064 j0.759
2.968 j0.893
2.876 j1.030
2.787 j1.170
2.701 j1.312
2.619 j1.455
2.540 j1.601
2.464 j1.749
2.391 j1.898
BLF888
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 21 January 2011
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BLF888
NXP Semiconductors
UHF power LDMOS transistor
7.4 Reliability
001aak649
6
5
4
3
2
10
Years
(1)
(2)
(3)
(4)
(5)
(6)
10
10
10
10
(7)
(8)
(9)
(10)
(11)
10
1
0
4
8
12
16
20
24
I
(A)
DS(DC)
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) 1 / .
(1) Tj = 100 C
(2) Tj = 110 C
(3) Tj = 120 C
(4) Tj = 130 C
(5) Tj = 140 C
(6) Tj = 150 C
(7) Tj = 160 C
(8) Tj = 170 C
(9) Tj = 180 C
(10) Tj = 190 C
(11) Tj = 200 C
Fig 11. BLF888 electromigration (IDS(DC), total device)
8. Test information
Table 9.
List of components
For test circuit, see Figure 12, Figure 13 and Figure 14.
Component
B1, B2
Description
Value
Remarks
semi rigid coax
25 ; 49.5 mm
12 pF
EZ90-25-TP
[1]
[1]
[2]
[1]
[2]
[1]
[2]
C1
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
C2, C9, C10
C3
10 pF
4.7 pF
C4, C5, C6
C7
8.2 pF
5.6 pF
C8, C13, C14
C11, C12
100 pF
2.0 pF
BLF888
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Product data sheet
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BLF888
NXP Semiconductors
UHF power LDMOS transistor
Table 9.
List of components …continued
For test circuit, see Figure 12, Figure 13 and Figure 14.
Component
Description
Value
Remarks
C15, C16
multilayer ceramic chip capacitor
4.7 F, 50 V
TDK C4532X7R1E475MT020U or
capacitor of same quality.
[2]
C17, C18
C19, C20
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
100 pF
10 F, 50 V
TDK C570X7R1H106KT000N or
capacitor of same quality.
C21, C22
C30, C31
C32
electrolytic capacitor
470 F; 63 V
10 pF
[3]
[3]
[3]
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
5.6 pF
C33, C34, C35
C36, C37
100 pF
4.7 F
TDK C4532X7R1E475MT020U or
capacitor of same quality.
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
L1
microstrip
microstrip
microstrip
microstrip
microstrip
microstrip
microstrip
microstrip
resistor
-
(W L) 15 mm 13 mm
(W L) 5 mm 26 mm
(W L) 2 mm 49.5 mm
(W L) 1.7 mm 3.5 mm
(W L) 2 mm 9.5 mm
(W L) 5 mm 13 mm
(W L) 2 mm 11 mm
(W L) 2 mm 3 mm
L2
-
L3, L32
L4
-
-
L5
-
L30
-
L31
-
L33
-
R1, R2
R3, R4
R5, R6
R7, R8
10
5.6
100
1 k
resistor
resistor
potentiometer
[1] American technical ceramics type 180R or capacitor of same quality.
[2] American technical ceramics type 100B or capacitor of same quality.
[3] American technical ceramics type 100A or capacitor of same quality.
[4] Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.76 mm; Cu (top/bottom metallization);
thickness copper plating = 35 m.
BLF888
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 21 January 2011
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xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx
+V
G1(test)
R7
C19
R1
C17
+V
D1(test)
R5
R3
C36
L5
C21
L30
C30
C34
C35
C11
C5
C9
C7
C13
C14
C15
C8
L1
L32
B2
L3
B1
L31
50 Ω
50 Ω
C33
C3
C1
L33
L2
L4
C2
C4
C6
C12
C32 C31
C16
R4
R6
C10
C22
+V
C37
D2(test)
R2
C18
C20
R8
001aak650
+V
G2(test)
See Table 9 for a list of components.
Fig 12. Class-AB common-source broadband amplifier; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages
BLF888
NXP Semiconductors
UHF power LDMOS transistor
L32
L3
L5
L30
L30
L1
L1
L2
L4
L2
50
mm
L31
L31
L33
L5
L32
L3
105 mm
001aak651
See Table 9 for a list of components.
Fig 13. Printed-Circuit Board (PCB) for class-AB common source amplifier
+V
G1(test)
+V
D1(test)
+
C17
R1
R7
R5
C36
C21
−
C19
C11
9 mm
R3
C15
C13
C14
C9
C7
C1
C3
C5 C6
C34
C30
C32
C33
50 Ω
C8
50
Ω
C31
C35
C2
C4
19.5 mm
C12
C10
C16
C21
2 mm
R4
31.5 mm
C20
C22
−
C37
R6
R8
R2
C18
+
6.5
mm
+V
G2(test)
+V
D2(test)
001aak652
See Table 9 for a list of components.
Fig 14. Component layout for class-AB common source amplifier
BLF888
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 21 January 2011
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BLF888
NXP Semiconductors
UHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads
SOT979A
D
A
F
D
U
1
1
1
B
C
q
H
c
w2
w1
C
A
B
1
2
p
U
2
H
E
E
1
5
L
3
4
A
b
w3
Q
e
w
3
0.25
0
5
10 mm
scale
0.010
Dimensions
(1)
Unit
A
b
c
D
D
E
E
e
F
H
H
1
L
p
Q
q
U
U
2
w
w
2
1
1
1
1
max 5.77 11.81 0.15 31.55 31.37 10.29 10.29
mm nom
1.969 17.50 25.53 3.86 3.30 3.02
41.28 10.29
13.72
0.540
35.56
1.400
0.25 0.51
min 4.80 11.56 0.10 30.94 31.12 10.03 10.03
1.689 17.25 25.27 3.35 3.05 2.77
0.078 0.689 1.005 0.152 0.130 0.119
41.02 10.03
1.625 0.405
max 0.227 0.465 0.006 1.242 1.235 0.405 0.405
inches nom
min 0.189 0.455 0.004 1.218 1.225 0.395 0.395
0.010 0.020
0.067 0.679 0.995 0.132 0.120 0.109
1.615 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
sot979a_po
Issue date
References
Outline
version
European
projection
IEC
JEDEC
JEITA
08-04-24
08-09-04
SOT979A
Fig 15. Package outline SOT979A
BLF888
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 21 January 2011
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BLF888
NXP Semiconductors
UHF power LDMOS transistor
10. Abbreviations
Table 10. Abbreviations
Acronym
CCDF
DVB
Description
Complementary Cumulative Distribution Function
Digital Video Broadcast
DVB-T
LDMOS
LDMOST
OFDM
PAR
Digital Video Broadcast - Terrestrial
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Orthogonal Frequency Division Multiplexing
Peak-to-Average power Ratio
RF
Radio Frequency
TTF
Time To Failure
UHF
Ultra High Frequency
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11. Revision history
Document ID
BLF888 v.5
Modifications:
BLF888 v.4
BLF888 v.3
BLF888 v.2
BLF888 v.1
Release date
20110121
Data sheet status
Change notice
Supersedes
Product data sheet
-
BLF888 v.4
• Table 6 on page 3: in the conditions column of gfs the symbol VGS has been changed to VDS
.
20100429
20100211
20091022
20081216
Product data sheet
Product data sheet
Preliminary data sheet
Objective data sheet
-
-
-
-
BLF888 v.3
BLF888 v.2
BLF888 v.1
-
BLF888
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 21 January 2011
14 of 17
BLF888
NXP Semiconductors
UHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
12.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
BLF888
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 21 January 2011
15 of 17
BLF888
NXP Semiconductors
UHF power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
12.4 Licenses
ICs with DVB-T or DVB-T2 functionality
Use of this product in any manner that complies with the DVB-T or the
DVB-T2 standard may require licenses under applicable patents of the
DVB-T respectively the DVB-T2 patent portfolio, which license is available
from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under
applicable patents of other parties.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.5 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF888
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 21 January 2011
16 of 17
BLF888
NXP Semiconductors
UHF power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 4
3
4
5
6
6.1
7
7.1
Application information. . . . . . . . . . . . . . . . . . . 5
Narrowband RF figures . . . . . . . . . . . . . . . . . . 5
2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Broadband RF figures . . . . . . . . . . . . . . . . . . . 6
2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Impedance information. . . . . . . . . . . . . . . . . . . 7
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
7.1.1
7.1.2
7.2
7.2.1
7.2.2
7.3
7.4
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
12.1
12.2
12.3
12.4
12.5
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 21 January 2011
Document identifier: BLF888
相关型号:
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