BLF8G20LS-260A [NXP]
Power LDMOS transistor; 功率LDMOS晶体管
| 型号： | BLF8G20LS-260A |
| 厂家： | 
NXP |
| 描述： | Power LDMOS transistor |
| 文件： | 总12页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF8G20LS-260A
Power LDMOS transistor
Rev. 1 — 13 September 2012
Objective data sheet
1. Product profile
1.1 General description
260 W LDMOS packaged asymmetrical Doherty power transistor for base station
applications at frequencies from 1805 MHz to 1880 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in an asymetric Doherty production test circuit.
Test signal
f
VDS
(V)
28
PL(AV)
(W)
Gp
D
ACPR
(dBc)
23[1]
(MHz)
(dB)
15.5
(%)
43
2-carrier W-CDMA[2]
1805 to 1880
50
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01% probability on CCDF per carrier, carrier
spacing 5 MHz.
[2]
IDq = 750 mA (main); VGS(amp)peak = 0.80 V.
1.2 Features and benefits
Excellent ruggedness
High-efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (1805 MHz to 1880 MHz)
Asymmetrical design to achieve optimum efficiency across the band
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and GSM multi carrier applications in
the 1805 MHz to 1880 MHz frequency range
BLF8G20LS-260A
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
drain1 (main)
drain2 (peak)
gate1 (main)
gate2 (peak)
source
Simplified outline
Graphic symbol
1
2
1
2
5
3
3
5
4
3
4
4
[1]
5
2
sym117
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF8G20LS-260A
-
earless flanged balanced ceramic package; 4 leads
SOT539B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min Max
- 65
Unit
V
drain-source voltage
VGS(amp)main
VGS(amp)peak
Tstg
main amplifier gate-source voltage
peak amplifier gate-source voltage
storage temperature
0.5 +13
0.5 +13
V
V
65
+150 C
Tj
junction temperature
-
225
C
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ
Unit
Rth(j-c)
thermal resistance from junction VDS = 28 V; IDq = 750 mA (main);
to case
VGS(amp)peak = 0.80 V; Tcase = 80 C
PL = 50 W
0.36
0.29
K/W
K/W
PL = 200 W
BLF8G20LS-260A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Objective data sheet
Rev. 1 — 13 September 2012
2 of 12
BLF8G20LS-260A
NXP Semiconductors
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Max Unit
Main device
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.44 mA
65
-
-
V
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
VDS = 10 V; ID = 144 mA 1.50 1.88 2.30
V
VGS = 0 V; VDS = 28 V
-
-
-
2.8
-
A
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
27
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 7.20 A
-
-
-
-
280
-
nA
S
forward transconductance
10.8
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 5.04 A
0.102 -
Peak device
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.2 mA
65
-
-
V
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
VDS = 10 V; ID = 220 mA 1.50 1.80 2.30
V
VGS = 0 V; VDS = 28 V
-
-
-
2.8
-
A
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
40
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 11.0 A
-
-
-
-
280
-
nA
S
forward transconductance
15.9
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 7.7 A
0.067 -
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 1 - 64 DPCH; f1 = 1807.5 MHz; f2 = 1812.5 MHz; f3 = 1872.5 MHz;
f4 = 1877.5 MHz; RF performance at VDS = 28 V; IDq = 750 mA (main); VGS(amp)peak = 0.80 V;
Tcase = 25 C; unless otherwise specified; in an asymetric Doherty production test circuit in
1805 MHz to 1880 MHz.
Symbol
Gp
Parameter
Conditions
Min
<tbd> 15.5
10
<tbd> 43
23
Typ Max
Unit
power gain
PL(AV) = 50 W
PL(AV) = 50 W
PL(AV) = 50 W
PL(AV) = 50 W
-
dB
RLin
input return loss
drain efficiency
adjacent channel power ratio
-
<tbd> dB
D
-
%
ACPR
-
<tbd> dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLF8G20LS-260A is capable of withstanding a load mismatch corresponding to a
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 750 mA (main); VGS(amp)peak = 0.80 V; PL = 200 W (CW); f = 1805 MHz to
1880 MHz.
BLF8G20LS-260A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Objective data sheet
Rev. 1 — 13 September 2012
3 of 12
BLF8G20LS-260A
NXP Semiconductors
Power LDMOS transistor
7.2 Impedance information
Table 8.
Typical impedance of main device
Measured load-pull data of main device; IDq = 750 mA (main); VDS = 28 V.
[1]
[1]
[2]
[2]
f
ZS
()
ZL
PL(3dB)
(W)
D
Gp
(MHz)
()
(%)
(dB)
Peak power load
1810
1840
1880
0.9 j3.3
1.4 j3.9
1.4 j3.9
1.4 j3.9
191
182
182
59
58
58
15.5
15.7
15.6
0.8 j3.4
0.8 j3.7
Peak drain efficiency load
1810
1840
1880
0.9 j3.3
0.8 j3.4
0.8 j3.7
2.3 j2.7
2.5 j2.5
2.1 j2.5
138
123
127
70
69
68
17.9
18.5
18.0
[1] ZS and ZL defined in Figure 1.
[2] at 3 dB gain compression.
Table 9.
Typical impedance of peak device
Measured load-pull data of peak device; IDq = 1200 mA (peak); VDS = 28 V.
[1]
[1]
[2]
[2]
f
ZS
()
ZL
PL(3dB)
(W)
D
Gp
(MHz)
()
(%)
(dB)
Peak power load
1810
1840
1880
0.8 j3.5
1.7 j4.0
1.9 j4.3
1.9 j4.3
257
257
251
61
59
59
16.0
15.8
16.2
0.8 j3.8
0.8 j3.9
Peak drain efficiency load
1810
1840
1880
0.8 j3.5
0.8 j3.8
0.8 j3.9
2.5 j2.5
2.5 j2.5
2.3 j2.7
178
180
182
70.0
70.0
68.0
18.6
18.5
18.8
[1] ZS and ZL defined in Figure 1.
[2] at 3 dB gain compression.
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
BLF8G20LS-260A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Objective data sheet
Rev. 1 — 13 September 2012
4 of 12
BLF8G20LS-260A
NXP Semiconductors
Power LDMOS transistor
7.3 Test circuit
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Printed-Circuit Board (PCB): Rogers RO4350; thickness = 0.508 mm.
See Table 10 for list of components.
Fig 2. Component layout for test circuit
Table 10. List of components
For test circuit, see Figure 2.
Component
Description
Value
Remarks
C11, C12, C14, C15, C16, multilayer ceramic chip capacitor 30 pF
C22, C23, C25, C31
ATC100B
C13
multilayer ceramic chip capacitor 0.5 pF
multilayer ceramic chip capacitor 100 nF
multilayer ceramic chip capacitor 1 F
multilayer ceramic chip capacitor 10 F
ATC800B
Murata
C17, C26
C18, C29
C19, C27, C30, C32
C20, C28
C21
Murata
Murata
electrolytic capacitor
2200 F
Panasonic
ATC800B
ATC800B
EMC
multilayer ceramic chip capacitor 0.3 pF
multilayer ceramic chip capacitor 1.2 pF
C24
R27
resistor
50
9.1
9.1
-
R28, R29
R30
resistor
Vishay Dale
1206
resistor
L3, L4
ferrite bead
inductor
Fair Rite 2743019447
Coilcraft
L5, L6
12 nH
-
X1
hybrid coupler
Anaren X3C19P1-03S
BLF8G20LS-260A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Objective data sheet
Rev. 1 — 13 September 2012
5 of 12
BLF8G20LS-260A
NXP Semiconductors
Power LDMOS transistor
7.4 Graphical data
7.4.1 CW pulsed
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VDS = 28 V; VGS(amp)main = 2.208 V; IDq = 746 mA;
GS(amp)peak = 0.80 V.
VDS = 28 V; VGS(amp)main = 2.208 V; IDq = 746 mA;
GS(amp)peak = 0.80 V.
V
V
(1) f = 1805 MHz
(2) f = 1842.5 MHz
(3) f = 1880 MHz
(1) f = 1805 MHz
(2) f = 1842.5 MHz
(3) f = 1880 MHz
Fig 3. Power gain and drain efficiency as function of
load power; typical values
Fig 4. Power gain and drain efficiency as function of
load power; typical values
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VDS = 28 V; VGS(amp)main = 2.208 V; IDq = 746 mA; VGS(amp)peak = 0.80 V.
(1) f = 1805 MHz
(2) f = 1842.5 MHz
(3) f = 1880 MHz
Fig 5. Input return loss as a function of load power; typical values
BLF8G20LS-260A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Objective data sheet
Rev. 1 — 13 September 2012
6 of 12
BLF8G20LS-260A
NXP Semiconductors
Power LDMOS transistor
7.4.2 2-Carrier W-CDMA
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VDS = 28 V; VGS(amp)main = 2.208 V; IDq = 746 mA;
VGS(amp)peak = 0.80 V.
VDS = 28 V; VGS(amp)main = 2.208 V; IDq = 746 mA;
VGS(amp)peak = 0.80 V.
(1) f = 1807.5 MHz
(2) f = 1842.5 MHz
(3) f = 1877.5 MHz
(1) f = 1805 MHz
(2) f = 1842.5 MHz
(3) f = 1880 MHz
Fig 6. Power gain and drain efficiency as function of
load power; typical values
Fig 7. Power gain and drain efficiency as function of
load power; typical values
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VDS = 28 V; VGS(amp)main = 2.208 V; IDq = 746 mA; VGS(amp)peak = 0.80 V.
(1) f = 1807.5 MHz
(2) f = 1842.5 MHz
(3) f = 1877.5 MHz
Fig 8. Input return loss as a function of load power; typical values
BLF8G20LS-260A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Objective data sheet
Rev. 1 — 13 September 2012
7 of 12
BLF8G20LS-260A
NXP Semiconductors
Power LDMOS transistor
8. Package outline
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D
1
D
U
H
1
c
w
2
D
1
1
2
E
1
U
E
H
2
L
3
4
b
w
3
Q
e
0
5
10 mm
scale
Dimensions
(1)
Unit
A
b
c
D
D
1
E
E
e
F
H
H
L
Q
U
1
U
2
w
2
w
3
1
1
max 4.7 11.81 0.18 31.55 31.52 9.5
mm nom
min 4.2 11.56 0.10 30.94 30.96 9.3
9.53
1.75 17.12 25.53 3.48 2.26 32.39 10.29
13.72
0.54
0.25 0.25
0.01 0.01
9.27
1.50 16.10 25.27 2.97 2.01 32.13 10.03
0.069 0.674 1.005 0.137 0.089 1.275 0.405
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
mm nom
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
0.059 0.634 0.995 0.117 0.079 1.265 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
sot539b_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
11-10-28
12-05-02
SOT539B
Fig 9. Package outline SOT539B
BLF8G20LS-260A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Objective data sheet
Rev. 1 — 13 September 2012
8 of 12
BLF8G20LS-260A
NXP Semiconductors
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 11. Abbreviations
Acronym
3GPP
CCDF
CW
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
DPCH
ESD
Dedicated Physical CHannel
ElectroStatic Discharge
GSM
Global System for Mobile communications
Laterally Diffused Metal-Oxide Semiconductor
Peak-to-Average Ratio
LDMOS
PAR
VSWR
W-CDMA
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
11. Revision history
Table 12. Revision history
Document ID
Release date
20120913
Data sheet status
Change notice
Supersedes
BLF8G20LS-260A v.1
Objective data sheet
-
-
BLF8G20LS-260A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Objective data sheet
Rev. 1 — 13 September 2012
9 of 12
BLF8G20LS-260A
NXP Semiconductors
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
12.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
BLF8G20LS-260A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Objective data sheet
Rev. 1 — 13 September 2012
10 of 12
BLF8G20LS-260A
NXP Semiconductors
Power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF8G20LS-260A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Objective data sheet
Rev. 1 — 13 September 2012
11 of 12
BLF8G20LS-260A
NXP Semiconductors
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Impedance information. . . . . . . . . . . . . . . . . . . 4
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6
CW pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7
7.1
7.2
7.3
7.4
7.4.1
7.4.2
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Handling information. . . . . . . . . . . . . . . . . . . . . 9
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 13 September 2012
Document identifier: BLF8G20LS-260A
相关型号：
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