BLS3135-10,114 [NXP]

TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, HERMETIC SEALED, CERAMIC PACKAGE-2, BIP RF Power;


型号：	BLS3135-10,114
厂家：	NXP
描述：	TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, HERMETIC SEALED, CERAMIC PACKAGE-2, BIP RF Power 局域网放大器 CD 晶体管
文件：	总12页 (文件大小：74K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D324

BLS3135-10

Microwave power transistor

Product speciﬁcation

2000 Feb 01

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS3135-10

FEATURES

PINNING - SOT445C

• Suitable for short and medium pulse applications

DESCRIPTION

• Internal input and output matching networks for an easy

circuit design

collector

emitter

• Emitter ballasting resistors improve ruggedness

• Gold metallization ensures excellent reliability

base; connected to ﬂange

• Interdigitated emitter-base structure provides high

emitter efficiency

• Multicell geometry improves power sharing and reduces

thermal resistance.

handbook, halfpage

APPLICATIONS

• Common base class-C pulsed power amplifier for radar

applications in the 3.1 to 3.5 GHz range.

Top view

MBK132

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in

a 2-lead rectangular flange package with a ceramic cap

(SOT445C) with the common base connected to the

flange.

Fig.1 Simplified outline.

QUICK REFERENCE DATA

RF performance at T_h= 25 °C in a common base class-C test circuit.

V_CB

(V)

P_L

(W)

G_p

(dB)

η_C

(%)

MODE OF OPERATION

(GHz)

Pulsed class-C

3.1 to 3.5

≥10

typ. 9

typ. 40

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

2000 Feb 01

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS3135-10

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

collector-base voltage

collector-emitter voltage

emitter-base voltage

CONDITIONS

MIN.

MAX.

UNIT

V_CBO

V_CES

V_EBO

I_CM

open emitter

R_BE= 0

−

open collector

peak collector current

total power dissipation

storage temperature

t_p≤ 100 µs; δ ≤ 10%

t_p= 100 µs; δ = 10%; T_h= 25 °C

1.5

P_tot

T_stg

T_j

−65

−

+200

200

235

°C

operating junction temperature

soldering temperature

T_sld

up to 0.2 mm from ceramic cap; t ≤ 10 s

−

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Z_{th j-h}

thermal impedance from junction to heatsink t_p= 100 µs; δ = 10%; note 1

t_p= 200 µs; δ = 10%; note 1

5.2

5.8

6.3

K/W

t_p= 300 µs; δ = 10%; note 1

Note

1. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_(BR)CBO

V_(BR)CES

I_CBO

collector-base breakdown voltage

I_C= 2.5 mA; open emitter

−

collector-emitter breakdown voltage I_C= 2.5 mA; V_BE= 0

−

collector leakage current

emitter leakage current

DC current gain

V_CB= 40 V; I_E= 0

V_CE= 40 V; V_BE= 0

V_EB= 1.5 V; I_C= 0

V_CE= 5 V; I_C= 0.25 A

0.3

0.5

0.1

−

I_CES

−

I_EBO

−

h_FE

APPLICATION INFORMATION

RF performance at T_h= 25 °C in a common-base test circuit.

V_CE

(V)

P_L

(W)

G_p

(dB)

η_C

(%)

MODE OF OPERATION

(GHz)

Class-C; t_p= 100 µs; δ = 10%

3.1 to 3.5

≥10

≥7.5

≥35

typ. 9

typ. 40

2000 Feb 01

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS3135-10

MCD856

MCD857

(1)

handbook, halfpage

(dB)

(1)

(2)

(3)

(2)

(3)

(W)

0.5

1.5

(W)

P (W)

V_CB= 40 V; class-C; t_p= 100 µs; δ = 10%.

(1) f = 3.1 GHz.

V_CB= 40 V; class-C; t_p= 100 µs; δ = 10%.

(1) f = 3.1 GHz.

(2) f = 3.3 GHz.

(3) f = 3.5 GHz.

Fig.2 Load power as a function of drive power;

typical values.

Fig.3 Power gain as a function of load power;

typical values.

MCD858

MCD859

return

losses

(dB)

handbook, halfpage

(%)

(dB)

(2)

(1)

(3)

return

losses

3.2

3.4

3.6

(W)

f (GHz)

V_CB= 40 V; class-C; t_p= 100 µs; δ = 10%.

(1) f = 3.1 GHz.

(2) f = 3.3 GHz.

V_CB= 40 V; class-C; P_L= 10 W; t_p= 100 µs; δ = 10%.

(3) f = 3.5 GHz.

Fig.4 Collector efficiency as a function of load

power; typical values.

Fig.5 Power gain and input return losses as

functions of frequency; typical values.

2000 Feb 01

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS3135-10

MCD860

MCD861

handbook, halfpage

(Ω)

−4

−8

3.2

3.4

3.6

3.2

3.4

3.6

f (GHz)

V_CB= 40 V; class-C; P_L= 10 W.

Fig.6 Input impedance as a function of frequency

(series components); typical values.

Fig.7 Load impedance as a function of frequency

(series components); typical values.

2000 Feb 01

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS3135-10

handbook, full pagewidth

MCD862

Dimensions in mm.

The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (ε_r= 2.2), thickness 0.38 mm.

The other side is unetched and serves as a ground plane.

C1 = 10 pF (ATC 100A); C2 = 100 pF (ATC 100A).

Fig.8 Component layout for 3.1 to 3.5 GHz class-C test circuit.

2000 Feb 01

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS3135-10

PACKAGE OUTLINE

Flanged hermetic ceramic package; 2 mounting holes; 2 leads

SOT445C

A B

10 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

5.57

4.70

3.35 3.33

3.05 3.03

20.47 5.18

20.17 4.98

3.15 0.15

2.95 0.09

8.13

7.87

7.65

7.35

8.15 4.20

7.85 3.93

4.25

3.95

5.31

5.01

1.82 15.84

1.22 14.64

14.22

0.51

1.02

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

SOT445C

97-05-23

2000 Feb 01

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS3135-10

DEFINITIONS

Data Sheet Status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

2000 Feb 01

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS3135-10

NOTES

2000 Feb 01

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS3135-10

NOTES

2000 Feb 01

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS3135-10

NOTES

2000 Feb 01

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SCA

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under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

603516/01/pp12

Date of release: 2000 Feb 01

Document order number: 9397 750 06715

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