BLT80 [NXP]
UHF power transistor; 超高频功率晶体管
| 型号： | BLT80 |
| 厂家： | 
NXP |
| 描述： | UHF power transistor |
| 文件： | 总12页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLT80
UHF power transistor
1996 May 09
Product specification
Supersedes data of May 1992
Philips Semiconductors
Product specification
UHF power transistor
BLT80
FEATURES
• SMD encapsulation
• Gold metallization ensures excellent reliability.
handbook, halfpage
4
APPLICATIONS
• Hand-held radio equipment in the 900 MHz
communication band.
c
b
DESCRIPTION
e
NPN silicon planar epitaxial transistor encapsulated in a
plastic SOT223 SMD package.
1
2
3
MAM043 - 1
PINNING - SOT223
Top view
PIN
SYMBOL
DESCRIPTION
emitter
1
2
3
4
e
b
e
c
base
emitter
collector
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Ts ≤ 60 °C in a common emitter test circuit (see Fig.7).
f
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
MODE OF OPERATION
(MHz)
CW, class-B narrow band
900
7.5
0.8
≥6
≥60
1996 May 09
2
Philips Semiconductors
Product specification
UHF power transistor
BLT80
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
−
−
−
−
−
−
−
V
V
V
open base
10
open collector
3
collector current (DC)
average collector current
peak collector current
total power dissipation
storage temperature
250
250
750
2
mA
mA
mA
W
IC(AV)
ICM
f > 1 MHz
Ptot
Ts = 131 °C; note 1
Tstg
Tj
−65
+150
175
°C
operating junction temperature
−
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to soldering point Ptot = 2 W; Ts = 131 °C; note 1
thermal resistance from junction to ambient Ptot = 2 W; Tamb = 25 °C; note 2
CONDITIONS
VALUE
22
UNIT
Rth j-s
Rth j-a
K/W
K/W
85
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
2. Transistor mounted on a printed-circuit board measuring 40 × 40 × 1 mm, collector pad 35 × 17 mm.
MRA780 - 1
1
handbook, halfpage
I
C
(A)
−1
10
−2
10
2
1
10
10
V
(V)
CE
Ts = 131 °C.
Fig.2 DC SOAR.
1996 May 09
3
Philips Semiconductors
Product specification
UHF power transistor
BLT80
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
20
MAX.
UNIT
V(BR)CBO collector-base breakdown voltage
open emitter; IC = 2.5 mA
−
−
−
V
V
V
V(BR)CEO collector-emitter breakdown voltage open base; IC = 5 mA
10
3
V(BR)EBO emitter-base breakdown voltage
open collector; IE = 0.5 mA
VCE = 10 V; VBE = 0
ICES
hFE
collector leakage current
DC current gain
−
0.1
mA
VCE = 5 V; IC = 150 mA; note 1;
see Fig.3
25
−
Cc
collector capacitance
feedback capacitance
VCB = 7.5 V; IE = ie = 0; f = 1 MHz;
see Fig.4
−
−
3.5
2.5
pF
pF
Cre
VCE = 7.5 V; IC = 0; f = 1 MHz
Note
1. Measured under pulsed conditions: tp ≤ 200 µs; δ ≤ 0.02.
MRA776
MRA773
100
5
handbook, halfpage
handbook, halfpage
C
c
h
FE
(pF)
4
80
60
40
20
0
3
2
1
0
0
0
200
400
600
800
4
8
12
16
20
(V)
I
(mA)
V
C
CB
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
VCE = 7.5 V; tp ≤ 200 µs; δ ≤ 0.02; Tj = 25 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Collector capacitance as a function of
collector-base voltage; typical values.
1996 May 09
4
Philips Semiconductors
Product specification
UHF power transistor
BLT80
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common emitter test circuit (see note 1 and Fig.7).
f
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
MODE OF OPERATION
(MHz)
≥6
≥60
CW, class-B narrow band
900
7.5
0.8
typ. 8
typ. 67
Note
1. Ts is the temperature at the soldering point of the collector pin.
Ruggedness in class-AB operation
The BLT80 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
following conditions: f = 900 MHz; VCE = 9 V; PL = 0.8 W; Ts ≤ 60 °C.
MRA774 100
MRA779
10
1.5
handbook, halfpage
handbook, halfpage
G
p
η
G
P
C
p
L
(%)
(dB)
8
(W)
1.2
80
60
40
20
0
6
4
2
0.9
0.6
0.3
η
C
0
0
0
0
200
400
600
0.3
0.6
0.9
1.2
1.5
(W)
P
(mW)
D
P
L
Class-B; f = 900 MHz; VCE = 7.5 V; Ts ≤ 60 °C.
Class-B; f = 900 MHz; VCE = 7.5 V; Ts ≤ 60 °C.
Fig.5 Power gain and collector efficiency as
functions of load power; typical values.
Fig.6 Load power as a function of drive
power; typical values.
1996 May 09
5
Philips Semiconductors
Product specification
UHF power transistor
BLT80
Test circuit information
C1
L1
C8
C7
L5
L6
L10
50 Ω
input
50 Ω
output
DUT
L2
L3
L7
L8
C2
C3
C5
L9
V
CC
R1
L4
R2
C4
C6
MBB649
Fig.7 Common emitter test circuit for class-B operation at 900 MHz.
List of components used in test circuit (see Figs 7 and 8)
COMPONENT DESCRIPTION
C1, C8 multilayer ceramic chip capacitor; note 1 100 pF
VALUE
DIMENSIONS
CATALOGUE No.
C2, C3
C4
type 9105 Voltronix KM10 trimmer
0.6 to 10 pF
multilayer ceramic chip capacitor; note 1 220 pF
C5, C7
C6
film dielectric trimmer
1.4 to 5.5 pF
2222 809 09001
multilayer ceramic chip capacitor; note 1 1 nF
L1
stripline; note 2
50 Ω
length 13 mm
width 4.85 mm
L2, L7
1 turn 0.4 mm copper wire on
grade 3B core
4330 030 32221
4312 020 36640
L3, L8
L4, L9
6 turns enamelled 0.8 mm copper wire
internal dia. 3 mm
grade 3B Ferroxcube wideband
HF choke
L5
stripline; note 2
stripline; note 2
stripline; note 2
metal film resistor
50 Ω
length 8.4 mm
width 4.85 mm
L6
50 Ω
length 20 mm
width 4.85 mm
L10
50 Ω
length 21 mm
width 4.85 mm
R1, R2
10 Ω, 0.25 W
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (εr = 2.2); thickness
1⁄16"; thickness of the copper sheet 35 µm.
1996 May 09
6
Philips Semiconductors
Product specification
UHF power transistor
BLT80
140
strap
strap
80
rivets
(14x)
strap
mounting
screws
(8x)
strap
V
CC
L9
L4
C6
C7
C4
R2
L3
R1
L8
L7
L2
L1
L5
L6
C1
L10
C8
C5
C2
C3
MBB648
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by means of fixing screws and copper foil straps under the emitter leads.
Fig.8 Printed-circuit board and component lay-out for 900 MHz class-B test circuit in Fig.7.
1996 May 09
7
Philips Semiconductors
Product specification
UHF power transistor
BLT80
MRA777
MRA778
10
30
handbook, halfpage
handbook, halfpage
Z
Z
L
R
L
i
(Ω)
25
(Ω)
r
i
8
6
4
20
15
10
5
x
i
2
X
L
0
800
0
800
840
880
920
960
1000
840
880
920
960
1000
f (MHz)
f (MHz)
Class-B; VCE = 7.5 V; PL = 0.8 W; Ts ≤ 60 °C.
Class-B; VCE = 7.5 V; PL = 0.8 W; Ts ≤ 60 °C.
Fig.9 Input impedance as a function of frequency
(series components); typical values.
Fig.10 Load impedance as a function of frequency
(series components); typical values.
MRA775
10
handbook, halfpage
G
p
(dB)
8
6
4
2
handbook, halfpage
Z
i
Z
MBA451
L
0
800
840
880
920
960
1000
f (MHz)
Class-B; VCE = 7.5 V; PL = 0.8 W; Ts ≤ 60 °C.
Fig.11 Power gain as a function of
frequency; typical values.
Fig.12 Definition of transistor impedance.
1996 May 09
8
Philips Semiconductors
Product specification
UHF power transistor
BLT80
PACKAGE OUTLINE
0.95
0.85
0.1 S
S
seating plane
0.32
0.24
6.7
6.3
3.1
2.9
B
M
0.2
A
4
A
0.10
0.01
3.7
3.3
7.3
6.7
o
o
16
max
16
1
2
3
o
10
max
0.80
0.60
1.80
max
M
2.3
0.1
B
(4x)
MSA035 - 1
4.6
Dimensions in mm.
Fig.13 SOT223.
1996 May 09
9
Philips Semiconductors
Product specification
UHF power transistor
BLT80
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 09
10
Philips Semiconductors
Product specification
UHF power transistor
BLT80
NOTES
1996 May 09
11
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SCDS48
© Philips Electronics N.V. 1996
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127061/1200/02/pp12
Date of release: 1996 May 09
9397 750 00836
Document order number:
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