BLV100 [NXP]
UHF power transistor; 超高频功率晶体管
| 型号： | BLV100 |
| 厂家： | 
NXP |
| 描述： | UHF power transistor |
| 文件： | 总10页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV100
UHF power transistor
March 1993
Product specification
Philips Semiconductors
Product specification
UHF power transistor
BLV100
FEATURES
PIN CONFIGURATION
• Internal input matching to achieve
high power gain
• Ballasting resistors for an optimum
temperature profile
alfpage
• Gold metallization ensures
excellent reliability.
1
2
4
6
c
handbook, halfpage
3
5
DESCRIPTION
b
NPN silicon planar epitaxial transistor
in a SOT171 envelope, intended for
common emitter, class-AB operation
in radio transmitters for the 960 MHz
communications band. The transistor
has a 6-lead flange envelope with a
ceramic cap. All leads are isolated
from the flange.
e
MBB012
MBA931 - 1
Top view
Fig.1 Simplified outline and symbol.
PINNING - SOT171
WARNING
PIN
DESCRIPTION
emitter
Product and environmental safety - toxic materials
1
2
3
4
5
6
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
emitter
base
collector
emitter
emitter
QUICK REFERENCE DATA
RF performance up to Th = 25 °C in a common emitter class-AB test circuit.
f
VCE
(V)
PL
(W)
GP
(dB)
ηc
(%)
MODE OF OPERATION
c.w. class-AB
(MHz)
960
24
8
> 8
> 50
March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
BLV100
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
collector-emitter voltage
CONDITIONS
peak value;
MIN.
MAX.
50
UNIT
VCESM
−
V
VBE = 0
VCEO
VEBO
IC
collector-emitter voltage
emitter-base voltage
collector current
open base
−
−
−
−
30
V
V
A
A
open collector
DC or average value
4
2.25
3.5
ICM
collector current
peak value
f > 1 MHz
Ptot
total power dissipation
f > 1 MHz;
−
31
W
Tmb = 25 °C
Tstg
Tj
storage temperature range
−65
150
200
°C
°C
junction operating temperature
−
MDA538
MDA540
10
60
handbook, halfpage
handbook, halfpage
P
tot
I
(W)
C
(A)
40
T
= 25 °C
mb
(1)
(2)
(1)
T
= 70 °C
h
1
20
−1
10
0
2
1
10
10
0
40
80
120
160
V
(V)
CE
T
(°C)
h
(1) RF operation.
(2) Short time operation during mismatch.
(1) Second breakdown limit (temperature independent).
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curve.
THERMAL RESISTANCE
Dissipation = 31 W; Tmb = 25 °C.
SYMBOL
PARAMETER
from junction to mounting base
from mounting base to heatsink
MAX.
UNIT
Rth j-mb(RF)
Rth mb-h
5.6
0.4
K/W
K/W
March 1993
3
Philips Semiconductors
Product specification
UHF power transistor
BLV100
CHARACTERISTICS
Tj = 25 °C.
SYMBOL
V(BR)CES
PARAMETER
CONDITIONS
VBE = 0;
MIN.
50
TYP.
MAX.
UNIT
collector-emitter breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-emitter leakage current
DC current gain
−
−
−
−
−
−
−
2
−
−
V
IC = 8 mA
V(BR)CEO
V(BR)EBO
ICES
open base;
IC = 60 mA
30
4
V
open collector;
IE = 4 mA
V
VBE = 0;
VCE = 30 V
−
mA
‘
hFE
VCE = 25 V;
IC = 0.6 A
20
−
75
Cc
collector capacitance
VCB = 25 V;
IE = Ie = 0;
f = 1 MHz
13.5
pF
Cre
feedback capacitance
VCE = 25 V;
IC = 40 mA;
f =1 MHz
−
−
8.4
2
−
−
pF
pF
Cc-f
collector-flange capacitance
MDA542
MDA544
100
60
handbook, halfpage
handbook, halfpage
h
FE
C
c
(pF)
80
40
60
40
20
20
0
0
0
0.4
0.8
1.2
1.6
2
0
10
20
30
V
(V)
I
(A)
CB
C
VCE = 25 V.
Fig.4 DC current gain as a function of collector
current, typical values.
Fig.5 Output capacitance as a function of
collector-base voltage, typical values.
March 1993
4
Philips Semiconductors
Product specification
UHF power transistor
BLV100
APPLICATION INFORMATION
RF performance in a class-AB circuit; Th = 25 °C; Rth mb-h = 0.4 K/W, unless otherwise specified.
f
VCE
(V)
ICQ
(mA)
PL
(W)
GP
(dB)
ηc
(%)
MODE OF OPERATION
c.w. class-AB
(MHz)
960
24
20
8
> 8
typ. 9
> 50
typ. 55
MDA539
MDA545
15
12
60
handbook, halfpage
handbook, halfpage
η
C
P
L
(W)
η
G
P
(dB)
C
(%)
G
p
10
8
40
5
4
20
0
0
0
0
0
12
1
2
3
4
8
P
(W)
S
P
(W)
L
Fig.6 Gain and efficiency as functions of load
power, typical values.
Fig.7 Load power as a function of drive power,
typical values.
Ruggedness in class-AB operation
The BLV100 is capable of withstanding a load mismatch
corresponding to VSWR = 10:1 through all phases, under
the following conditions:
VCE = 24 V, f = 960 MHz, and rated output power.
March 1993
5
Philips Semiconductors
Product specification
UHF power transistor
BLV100
R2
L8
R1
C6
C8
V
V
B
CC
L6
C7
C9
C10
L5
L7
D.U.T.
C12
L9
C5
L4
L1
L2
L3
L11
L12
L10
C1
C15
50 Ω
50 Ω
input
output
C2
C3
C4
C11
C13
C14
MDA537
Fig.8 Class-AB test circuit at f = 960 MHz.
List of components (see test circuit)
COMPONENT
CATALOGUE
NO.
DESCRIPTION
VALUE
330 pF
1.4 to 5.5 pF
multilayer ceramic chip capacitor (note 1) 5.1 pF
DIMENSIONS
C1, C6, C7,
C8, C15
multilayer ceramic chip capacitor
film dielectric trimmer
C2, C3, C13,
C14
2222 809 09001
2222 128 50228
C4, C5
C9
35 V solid aluminium capacitor
multilayer ceramic chip capacitor
2.2 µF
C10
3 × 100 pF
in parallel
C11, C12
L1, L12
L2, L11
L3
multilayer ceramic chip capacitor (note 2) 6.2 pF
microstrip (note 3)
50 Ω
50 Ω
50 Ω
43 Ω
9 × 2.4 mm
microstrip (note 3)
23 × 2.4 mm
16 × 2.4 mm
3 × 3 mm
microstrip (note 3)
L4
microstrip (note 3)
L5
3 turns enamelled 0.8 mm copper wire
int. dia. 3 mm;
length 5 mm;
leads 2 × 5 mm
L6, L8
L7
grade 3B Ferroxcube wideband RF choke
4 turns enamelled 0.8 mm copper wire
4312 020 36642
2322 151 71009
int. dia. 4 mm;
length 5 mm;
leads 2 × 5 mm
L9
microstrip (note 3)
43 Ω
50 Ω
10 Ω
14.5 mm × 3 mm;
4.5 mm × 2.4 mm;
L10
microstrip (note 3)
R1, R2
0.4 W metal film resistor
March 1993
6
Philips Semiconductors
Product specification
UHF power transistor
BLV100
Notes
1. American Technical Ceramics capacitor type 100A, or capacitor of the same quality.
2. American Technical Ceramics capacitor type 100B, or capacitor of the same quality.
3. The microstrips are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2),
thickness 1⁄32 inch.
122 mm
copper straps
copper straps
rivets
rivets
70 mm
rivets
rivets
M2
copper straps
copper straps
M3
C7
L6
L8
C10
R2
C6
C8
R1
C9
L7
C12
L5
C5
C4
C1
C15
L10
C13
L12
L1
L2
L3
L11
L4
L9
C11
C3
C3
C14
MDA536
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully
metallized to serve as an earth. Earth connections are made by means of fixing screws, hollow rivets and
straps around the board and under the emitters, to provide a direct contact between the component ground
plane.
Fig.9 Component layout for 960 MHz test circuit.
March 1993
7
Philips Semiconductors
Product specification
UHF power transistor
BLV100
MDA543
MDA546
5
10
handbook, halfpage
handbook, halfpage
Z
Z
i
L
(Ω)
(Ω)
X
L
4
8
x
i
3
2
6
4
R
L
r
i
1
0
2
0
800
800
850
900
950
1000
f (MHz)
850
900
950
1000
f (MHz)
VCE = 24 V; ICQ = 20 mA; PL = 8 W.
VCE = 24 V; ICQ = 20 mA; PL = 8 W.
Fig.10 Input impedance (series components) as a
function of frequency, typical values.
Fig.11 Load impedance (series components) as a
function of frequency, typical values.
MDA541
12
handbook, halfpage
G
p
(dB)
8
handbook, halfpage
4
0
Z
i
Z
MBA451
L
800
850
900
950
1000
f (MHz)
VCE = 24 V; ICQ = 20 mA; PL = 8 W.
Fig.13 Power gain as a function of frequency,
typical values.
Fig.12 Definition of transistor impedance.
March 1993
8
Philips Semiconductors
Product specification
UHF power transistor
BLV100
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 6 leads
SOT171A
D
A
F
B
D
1
U
1
q
C
w
M
H
1
C
2
c
b
1
2
1
4
6
E
H
E
U
1
2
3
5
w
p
A
M
A
B
1
Q
w
b
M
3
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
b
D
D
E
E
e
F
H
H
p
Q
q
U
U
w
w
w
3
UNIT
1
1
1
1
1
2
1
2
2.15 3.20
1.85 2.89
6.81
6.07
9.25 9.30 5.95 6.00
9.04 8.99 5.74 5.70
3.05 11.31 9.27 3.43 4.32
2.54 10.54 9.01 3.17 4.11
24.90 6.00
24.63 5.70
0.16
0.07
18.42
0.725
0.51 1.02 0.26
0.02 0.04 0.01
mm
3.58
0.085 0.126
0.073 0.114
0.268
0.239
0.364 0.366 0.234 0.236
0.356 0.354 0.226 0.224
0.120 0.445
0.100 0.415
0.135 0.170
0.125 0.162
0.236
0.224
0.006
0.003
0.365
0.355
0.980
0.970
inches
0.140
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT171A
97-06-28
March 1993
9
Philips Semiconductors
Product specification
UHF power transistor
BLV100
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
March 1993
10
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