BLV59 [NXP]
UHF linear power transistor; UHF线性功率晶体管
| 型号： | BLV59 |
| 厂家： | 
NXP |
| 描述： | UHF linear power transistor |
| 文件： | 总12页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV59
UHF linear power transistor
1998 Jan 09
Product specification
Supersedes data of March 1993
Philips Semiconductors
Product specification
UHF linear power transistor
BLV59
FEATURES
PINNING - SOT171A
• Internal input matching to achieve an optimum
wideband capability and high power gain
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
6
e
e
b
c
e
e
emitter
• Emitter-ballasting resistors for lower junction
temperatures
emitter
base
• Titanium-platinum-gold metallization ensures long life
and excellent reliability.
collector
emitter
emitter
APPLICATIONS
• UHF linear amplifiers in television transmitters.
handbook, halfpage
2
1
4
3
6
5
c
DESCRIPTION
NPN silicon planar epitaxial power transistor encapsulated
in a 6-lead SOT171A flange package with a ceramic cap.
All leads are isolated from the flange.
b
e
MAM141
Top view
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter class-AB circuit.
f
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
MODE OF OPERATION
CW, class-AB
(MHz)
860
25
30
>7
>50
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Jan 09
2
Philips Semiconductors
Product specification
UHF linear power transistor
BLV59
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
CONDITIONS
open emitter
MIN.
MAX.
50
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
V
V
V
A
A
A
open base
27
3.5
3
open collector
collector current (DC)
average collector current
peak collector current
total power dissipation
storage temperature
IC(AV)
ICM
3
f > 1 MHz
9
Ptot
Tmb = 25 °C; f > 1 MHz
70
+150
200
W
Tstg
Tj
−65
°C
°C
operating junction temperature
−
MGP380
MGP379
10
100
handbook, halfpage
handbook, halfpage
I
P
C
tot
T
= 25 °C
(A)
(W)
amb
T
= 70 °C
h
1
50
(2)
(1)
−1
10
0
0
2
100
200
1
10
10
T
(°C)
V
(V)
h
CE
(1) Continuous operation (f > 1 MHz).
(2) Short-time operation during mismatch (f > 1 MHz).
Rth mb-h = 0.4 K/W.
Fig.3 Power/temperature derating curves.
Fig.2 DC SOAR.
1998 Jan 09
3
Philips Semiconductors
Product specification
UHF linear power transistor
BLV59
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
2.3
0.4
UNIT
K/W
K/W
Rth j-mb
Rth mb-h
thermal resistance from junction to mounting base Tmb = 25 °C, Ptot = 50 W
thermal resistance from mounting base to heatsink
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
50
TYP. MAX. UNIT
V(BR)CBO collector-base breakdown voltage
open emitter; IC = 50 mA
−
−
V
V(BR)CEO collector-emitter breakdown voltage open base; IC = 100 mA
27
3.5
−
−
−
V
V(BR)EBO emitter-base breakdown voltage
open collector; IE = 10 mA
VCE = 27 V; VBE = 0
−
−
V
ICES
E(SBR)
hFE
Cc
collector leakage current
second breakdown energy
DC current gain
−
10
−
mA
mJ
L = 25 mH; f = 50 Hz; RBE = 10 Ω 4
−
VCE = 24 V; IC = 2 A
15
−
−
collector capacitance
feedback capacitance
collector-flange capacitance
VCB = 25 V; IE = ie = 0; f = 1 MHz
VCE = 25 V; IC = 0; f = 1 MHz
−
−
−
44
30
2
−
pF
pF
pF
Cre
−
Ccf
−
MGP381
MGP382
100
100
handbook, halfpage
handbook, halfpage
V
= 25 V
20 V
CE
C
c
(pF)
h
FE
50
50
0
0
0
0
4
8
10
20
30
I
(A)
V
(V)
C
CB
IE = ie = 0; f = 1 MHz.
Tj = 25 °C.
Fig.4 DC current gain as a function of collector
current; typical values.
Fig.5 Collector capacitance as a function of
collector-base voltage; typical values
1998 Jan 09
4
Philips Semiconductors
Product specification
UHF linear power transistor
BLV59
APPLICATION INFORMATION
RF performance up to Th = 25 °C in a common emitter class-AB circuit; Rth mb-h = 0.4 K/W.
f
VCE
(V)
IC(ZS)
(mA)
Gp
(dB)
PL
(W)
ηC
(%)
∆Gp
(dB)(1)
MODE OF OPERATION
(MHz)
CW, class-AB
860
25
60
>7
30
>50
<1
typ. 8.5
typ. 55
typ. 0.2
Note
1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with
30% sync input/25% sync output compression in television service (negative modulation, C.C.I.R. system).
Ruggedness in class-AB operation
The BLV59 is capable of withstanding a load mismatch corresponding to VSWR = 10 through all phases at rated load
power under the following conditions: VCE = 25 V; f = 860 MHz; Th = 25 °C; Rth mb-h = 0.4 K/W; IC(ZS) = 60 mA.
C10
L9
C12
L10
C2
C3
C5
L3
C7
L4
C14
C15
C16
C18
D.U.T.
L6
C1
L11
L1
L2
50 Ω
50 Ω
C11
C13
C17
C4
C6
C8
L5
L7
C9
C19
L8
+V
BB
+V
CC
R1
C20
C21
MGP383
Temperature compensated bias (Ri < 0.1 Ω).
Fig.6 Class-AB test circuit at 860 MHz.
1998 Jan 09
5
Philips Semiconductors
Product specification
UHF linear power transistor
BLV59
List of components (see Figs 6 and 7).
COMPONENT
C1, C18
DESCRIPTION
VALUE
33 pF
DIMENSIONS
CATALOGUE No.
multilayer ceramic chip
capacitor; note 1
C2, C14, C16
multilayer ceramic chip
capacitor; note 1
3.6 pF
C3, C4, C15, C17
C5, C6
film dielectric trimmer
1.4 to 5.5 pF
1.8 pF
2222 809 09001
multilayer ceramic chip
capacitor; note 1
C7, C8
C9, C21
C10, C11
C12
multilayer ceramic chip
capacitor
6.2 pF
330 pF
5.6 pF
5.6 pF
6.2 pF
10 pF
multilayer ceramic chip
capacitor; note 1
multilayer ceramic chip
capacitor; note 2
multilayer ceramic chip
capacitor; note 1
C13
multilayer ceramic chip
capacitor; note 1
C19
multilayer ceramic chip
capacitor; note 1
C20
electrolytic capacitor
stripline; note 3
stripline; note 3
stripline; note 3
6.8 µF; 63 V
50 Ω
L1, L11
L2, L3
L4
26 mm × 2.4 mm
9.5 mm × 2.4 mm
6 mm × 3 mm
50 Ω
42.6 Ω
60 nH
L5
4 turns of closely wound
0.4 mm enamelled copper
wire
int. diameter 3 mm
leads 2 × 5 mm
L6
L7
stripline; note 3
42.6 Ω
4 mm × 3 mm
4 turns of closely wound
1 mm enamelled Cu wire
45 nH
int. diameter 4 mm
leads 2 × 5 mm
L8
Ferroxcube HF choke
stripline; note 3
grade 3B
50 Ω
4312 020 36642
L9
9 mm × 2.4 mm
L10
R1
stripline; note 3
50 Ω
13.5 mm × 2.4 mm
metal film resistor
10 Ω ±5%; 1 W
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
3. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 2.2);
thickness 1⁄32".
1998 Jan 09
6
Philips Semiconductors
Product specification
UHF linear power transistor
BLV59
130
copper straps
copper straps
rivets
rivets
70
rivets
rivets
copper straps
copper straps
L8
+V
CC
+V
BB
C19
C9
R1
C20
C21
C14
L7
L5
C5
C2
C3
C12
C16
C17
C10
L4
C7
L3
C8
C1
C18
L1
L2
L10
L11
L9
C11
L6
C13
C6
C4
C15
MGP384
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE-glass board, the other side is unetched and serves as a ground plane.
Earth connections are made by fixing screws, hollow rivets and copper straps around the board and under the bases to provide a direct contact
between the copper on the component side and the ground plane.
Fig.7 Printed-circuit board and component layout for 860 MHz class-AB test circuit.
1998 Jan 09
7
Philips Semiconductors
Product specification
UHF linear power transistor
BLV59
MGP385
MGP386
50
10
100
handbook, halfpage
handbook, halfpage
P
L
G
(W)
40
p
η
G
p
C
(%)
(dB)
30
20
10
η
C
5
50
0
0
0
0
0
2
4
6
8
10
25
50
P
(W)
P
(W)
L
S
VCE = 25 V; f = 860 MHz; IC(ZS) = 60 mA; Th = 25 °C;
VCE = 25 V; f = 860 MHz; IC(ZS) = 60 mA; Th = 25 °C;
Rth mb-h = 0.4 K/W; class-AB operation.
Rth mb-h = 0.4 K/W; class-AB operation.
Fig.8 Load power as a function of source power;
typical values.
Fig.9 Power gain and efficiency as a function of
load power; typical values.
MGP387
MGP388
2.2
4
handbook, halfpage
handbook, halfpage
Z
i
(Ω)
Z
L
(Ω)
x
i
1.8
1.4
3
R
L
2
X
L
r
i
1
1
0
0.6
400
500
600
700
800
900
400
500
600
700
800
900
f (MHz)
f (MHz)
VCE = 25 V; PL = 30 W; Th = 25 °C;
Rth mb-h = 0.4 K/W; IC(ZS) = 60 mA; class-AB operation.
VCE = 25 V; PL = 30 W; Th = 25 °C;
Rth mb-h = 0.4 K/W; IC(ZS) = 60 mA; class-AB operation.
Fig.10 Input impedance as a function of frequency
(series components); typical values.
Fig.11 Load impedance as a function of frequency
(series components); typical values.
1998 Jan 09
8
Philips Semiconductors
Product specification
UHF linear power transistor
BLV59
MGP389
15
handbook, halfpage
G
p
(dB)
10
5
0
400
600
800
1000
f (MHz)
VCE = 25 V; PL = 30 W; Th = 25 °C;
Rth mb-h = 0.4 K/W; IC(ZS) = 60 mA; class-AB operation.
Fig.12 Power gain as a function of load power;
typical values.
1998 Jan 09
9
Philips Semiconductors
Product specification
UHF linear power transistor
BLV59
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 6 leads
SOT171A
D
A
F
B
D
1
U
1
q
C
w
M
H
1
C
2
c
b
1
2
1
4
6
E
H
E
U
1
2
3
5
w
p
A
M
A
B
1
Q
w
b
M
3
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
b
D
D
E
E
e
F
H
H
p
Q
q
U
U
w
w
w
3
UNIT
1
1
1
1
1
2
1
2
2.15 3.20
1.85 2.89
6.81
6.07
9.25 9.30 5.95 6.00
9.04 8.99 5.74 5.70
3.05 11.31 9.27 3.43 4.32
2.54 10.54 9.01 3.17 4.11
24.90 6.00
24.63 5.70
0.16
0.07
18.42
0.725
0.51 1.02 0.26
0.02 0.04 0.01
mm
3.58
0.085 0.126
0.073 0.114
0.268
0.239
0.364 0.366 0.234 0.236
0.356 0.354 0.226 0.224
0.120 0.445
0.100 0.415
0.135 0.170
0.125 0.162
0.236
0.224
0.006
0.003
0.365
0.355
0.980
0.970
inches
0.140
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT171A
97-06-28
1998 Jan 09
10
Philips Semiconductors
Product specification
UHF linear power transistor
BLV59
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jan 09
11
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Belgium: see The Netherlands
Brazil: see South America
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Colombia: see South America
Czech Republic: see Austria
Slovakia: see Austria
Slovenia: see Italy
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 488 3263
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Uruguay: see South America
Vietnam: see Singapore
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1998
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127067/00/02/pp12
Date of release: 1998 Jan 09
Document order number: 9397 750 03119
相关型号：
©2020 ICPDF网 联系我们和版权申明