BLV859 [NXP]
UHF linear push-pull power transistor; UHF线性推挽功率晶体管型号: | BLV859 |
厂家: | NXP |
描述: | UHF linear push-pull power transistor |
文件: | 总16页 (文件大小:129K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV859
UHF linear push-pull power
transistor
1996 Jul 26
Product specification
Supersedes data of 1995 Oct 04
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV859
FEATURES
PINNING SOT262B
• Double internal input and output matching for an
optimum wideband capability and high gain
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
c1
c2
b1
b2
e
collector 1
collector 2
base 1
• Polysilicon emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
base 2
emitter
APPLICATION
• Common emitter class-A operation in linear
transposers/transmitters (television) in the
470 to 860 MHz frequency band.
c1
handbook, halfpage
1
2
b1
DESCRIPTION
e
NPN silicon planar transistor with two sections in push-pull
configuration. The device is encapsulated in a SOT262B
4-lead rectangular flange package, with two ceramic caps.
It delivers a Po sync = 20 W in class-A operation at
860 MHz and a supply voltage of 25 V.
b2
5
5
3
4
Top view
c2
MAM031
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter push-pull test circuit.
f
VCE
(V)
ICQ
(A)
Po sync
(W)
Gp
(dB)
MODE OF OPERATION
(MHz)
CW class-A
860
25
2 × 2.25
≥20(1)
≥10(1)
Note
1. Three-tone test signal (−8, −16 and −10 dB); dim = −54 dB.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Jul 26
2
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV859
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
60
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
V
V
V
A
A
collector-emitter voltage
emitter-base voltage
open base
28
open collector
2.5
15
collector current (DC)
average collector current
total power dissipation
storage temperature
IC(AV)
Ptot
15
Tmb = 70 °C; note 1
145
+150
200
W
Tstg
Tj
−65
°C
°C
operating junction temperature
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
Rth mb-h
thermal resistance from junction to mounting-base Ptot = 145 W; Tmb = 70 °C note 1 0.9
thermal resistance from mounting-base to heatsink note 1 0.15
K/W
K/W
Note to Limiting values and Thermal characteristics
1. Total device; both sections equally loaded.
MGD540
320
handbook, halfpage
P
tot
(W)
(2)
240
(1)
160
80
0
0
40
80
120
160
T
°C
mb
(1) Continuous operation.
(2) Short-time operation during mismatch.
Fig.2 Power derating curve.
1996 Jul 26
3
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV859
CHARACTERISTICS
Values apply to either transistor section; Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-base leakage current
collector-emitter leakage current
DC current gain
CONDITIONS
IC = 30 mA; IE = 0
MIN.
60
TYP.
MAX. UNIT
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
−
−
V
IC = 60 mA; IB = 0
IE = 1.2 mA; IC = 0
VCB = 27 V; VBE = 0
VCE = 20 V
28
2.5
−
−
−
V
−
−
V
−
3
mA
mA
ICEO
−
−
6
hFE
VCE = 25 V; IC = 2.25 A
30
−
−
36(1)
140
−
Cc
collector capacitance
VCB = 25 V; IE = ie = 0;
f = 1 MHz
pF
pF
Cre
feedback capacitance
VCE = 25 V; IB = 0; f = 1 MHz
−
22
−
Note
1. The value of Cc is that of the die only; it is not measurable, because of the internal matching network.
MGD541
MGD542
80
160
handbook, halfpage
handbook, halfpage
C
c
(pF)
h
FE
120
80
60
40
40
20
0
0
0
10
20
30
40
2
4
6
I
(A)
V
(V)
CB
C
VCE = 25 V; tp = 500 µs; δ = <1 %.
IE = ie = 0; f = 1 MHz.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Collector capacitance as a function of
collector-base voltage; typical values.
1996 Jul 26
4
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV859
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common emitter push-pull class-A test circuit.
f
VCE
(V)
ICQ
(A)
Po sync
(W)
Gp
(dB)
dim
(dB)
MODE OF OPERATION
(MHz)
CW class-A
CW class-A
860
860
25
25
2 × 2.25
2 × 2.25
≥20(1)
≥20(2)
≥10(1)
≥10(2)
≤−54(1)
≤−51(2)
Notes
1. Three-tone test method (vision carrier −8 dB, sound carrier −10 dB, sideband signal −16 dB), 0 dB corresponds to
peak sync level.
2. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), 0 dB corresponds to
peak sync level.
Ruggedness in class-A operation
The BLV859 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
conditions: VCE = 25 V; ICQ = 2 × 2.25 A; f = 860 MHz; Th = 25 °C; Po sync = 20 W.
MGD543
MGD544
80
14
handbook, halfpage
handbook, halfpage
P
o sync
(W)
G
p
(dB)
(1)
(2)
(1)
(2)
60
10
40
20
6
0
0
2
0
2
4
6
8
(W)
20
40
60
P
80
(W)
P
o sync
i sync
VCE = 25 V; ICQ = 2 × 2.25 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) h = 25 °C.
VCE = 25 V; ICQ = 2 × 2.25 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) h = 25 °C.
T
T
(2) Th = 70 °C.
(2) Th = 70 °C.
Fig.5 Output power as a function of input power;
typical values.
Fig.6 Power gain as a function of output power;
typical values.
1996 Jul 26
5
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV859
MGD545
MGD546
−10
-40
handbook, halfpage
handbook, halfpage
d
d
im
im
(dB)
(dB)
−30
-50
(1)
(2)
(1)
(2)
−50
−70
-60
-70
3
0
20
40
60
P
80
(W)
4
5
6
I
(A)
C
o sync
VCE = 25 V; ICQ = 2 × 2.25 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
VCE = 25 V; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th = 70 °C.
(1) Th = 70 °C.
(2) Th = 25 °C.
(2) Th = 25 °C.
Fig.7 Intermodulation distortion as a function of
output power; typical values.
Fig.8 Intermodulation distortion as a function of
collector current; typical values.
1996 Jul 26
6
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV859
GM5D47
a n d b o o k , f u l l p a g e w i d t h
1996 Jul 26
7
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV859
115
55
TR1
R3
C1
R1 R2
P1
TR2
V
CC
C5
C6
R4
C3
L17
C13
C2
C4
B1
B2
GND
L7
L9
C16 & C17
C20 & C21
C19 & C20
L13
C7
R5
L1 & L2
C9
C10
L5
L3
B
C
L11
L12
50 Ω
50 Ω
C14
R6
C15
BLV859
input
output
L14
L4
L6
C18 & C19
C12
C11
B
C
L15
&
L16
C22 & C23
C21 & C22
C8
L8
L10
MGD551
inner lead and outer lead are shorted. (repeat for each balun)
Dimensions in mm.
Fig.10 Printed-circuit board and component lay-out for 860 MHz class-A test circuit.
8
1996 Jul 26
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV859
List of components
COMPONENT
DESCRIPTION
VALUE
15 nF
DIMENSIONS CATALOGUE No.
C1, C2, C3, C5, C6 multilayer ceramic chip capacitor;
805
2222 590 16629
2222 030 36479
2222 590 16627
2222 591 16641
2222 030 381109
C4
solid aluminium capacitor
47 µF; 25 V
10 nF
C7, C8
multilayer ceramic chip capacitor
805
C9, C10, C11, C12 multilayer ceramic chip capacitor
100 nF
1206
C13
solid aluminium capacitor
10 µF; 63 V
C14, C15
C16
multilayer ceramic chip capacitor; note 1 47 pF
multilayer ceramic chip capacitor; note 1 8.2 pF
C17, C21
C18
Tekelec Giga trim 37271
0.6 to 4.5 pF
multilayer ceramic chip capacitor; note 1 13 pF
multilayer ceramic chip capacitor; note 1 3.9 pF
multilayer ceramic chip capacitor; note 1 12 pF
multilayer ceramic chip capacitor; note 1 9.1 pF
C19
C20
C22
L1, L2, L15, L16
L3, L4
L5, L6
L7, L8, L9, L10
L11, L12
L13, L14
L17
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
Semi rigid coax balun UT70-25
SMD resistor
50 Ω
2 × 30.6 mm
2 × 9.5 mm
4 × 3 mm
50 Ω
32.4 Ω
16.2 Ω
37.5 Ω
50 Ω
9.5 × 2.6 mm
3.5 × 3.4 mm
2 × 13.9 mm
1 × 120 mm
77.7 Ω
B1, B2
R1
Z = 25 Ω, ±1.5 Ω 70 mm
220 Ω
1.8 Ω
2.7 kΩ
33 Ω
805
805
805
805
805
2322 734 22201
2322 734 21808
2322 734 22702
2322 734 23309
2322 734 23308
R2
SMD resistor
R3
SMD resistor
R4
SMD resistor
R7, R8
P1
SMD resistor
3.3 Ω
1 kΩ
Murata potentiometer
RG4M08-102VM-TG
TR1
TR2
NPN transistor
BD139
BVC62
9330 912 20112
5332 130 60505
double PNP transistor
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad PCB: Rogers ULTRALAM 200 (B0300M1046QB) (εr = 2.55);
thickness 0.76 mm.
1996 Jul 26
9
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV859
MGD548
MGD549
8
8
handbook, halfpage
handbook, halfpage
Z
L
Z
i
(Ω)
(Ω)
6
R
6
L
x
i
4
2
4
2
X
L
r
i
0
−2
450
0
450
550
650
750
850
950
550
650
750
850
950
f (MHz)
f (MHz)
VCE = 25 V; ICQ = 2 × 2.25 A; Po sync = 20 W (total device); Th = 25 °C.
VCE = 25 V; ICQ = 2 × 2.25 A; Po sync = 20 W (total device); Th = 25 °C.
Fig.11 Input impedance (per section) as a function
of frequency (series components); typical
values.
Fig.12 Load impedance (per section) as a function
of frequency (series components); typical
values.
MGD550
20
handbook, halfpage
G
p
(dB)
16
12
8
handbook, halfpage
4
0
Z
i
Z
MBA451
L
450
550
650
750
850
950
f (MHz)
VCE = 25 V; ICQ = 2 × 2.25 A; Po sync = 20 W (total device); Th = 25 °C.
Fig.13 Gain as a function of frequency; typical
values.
Fig.14 Definition of transistor impedance.
1996 Jul 26
10
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV859
PACKAGE OUTLINE
0.13
5.4
max
2.47
2.20
1.65
seating plane
21.85
0.25 M
8.51
8.25
(4x)
2.54
1
3
2
10.4
max
3.3
3.0
15.6
max
9.8
5
4
11.05
27.94
MSA453
34.3 max
Dimensions in mm.
Torque on screw: min. 0.6 Nm; max. 0.75 Nm.
Recommended screw: cheese-head 4-40 UNC/2A.
Heatsink compound must be applied sparingly and evenly distributed.
Fig.15 SOT262B.
1996 Jul 26
11
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV859
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jul 26
12
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV859
NOTES
1996 Jul 26
13
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV859
NOTES
1996 Jul 26
14
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV859
NOTES
1996 Jul 26
15
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© Philips Electronics N.V. 1996
SCA51
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Printed in The Netherlands
127041/1200/02/pp16
Date of release: 1996 Jul 26
Document order number: 9397 750 00987
相关型号:
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