BR100/03T/R [NXP]
DIAC, 36 V, DIAC, DO-35, HERMETIC SEALED, GLASS PACKAGE-2;型号: | BR100/03T/R |
厂家: | NXP |
描述: | DIAC, 36 V, DIAC, DO-35, HERMETIC SEALED, GLASS PACKAGE-2 数据判读及分析中心 |
文件: | 总3页 (文件大小:16K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Philips Semiconductors
Product Specification
Silicon Bi-directional Trigger Device
BR100/03
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Silicon bidirectional trigger device in a
glass envelope intended for use in
triac and thyristor trigger circuits.
SYMBOL PARAMETER
MIN. MAX. UNIT
V(BO)
VO
Breakover voltage
28
7
36
-
2
V
V
A
Output voltage
IFRM
Repetitive peak forward current
-
OUTLINE - SOD27
SYMBOL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IFRM
Repetitive peak forward
current
Total power dissipation
Storage temperature
Operating junction
temperature
t ≤ 10 µs, Ta ≤ 50˚C; f = 60 Hz
-
2
A
Ptot
Tstg
Tj
Ta = 50˚C
-
-55
-
150
125
100
mW
˚C
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-a
Thermal resistance junction to in free air
-
-
330
150
-
-
K/W
K/W
ambient
Rth j-lead
Thermal resistance junction to
leads
CHARACTERISTICS
Ta = 25 ˚C unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BO)
Breakover voltage
I = I(BO)
28
-
32
36
3.5
-
50
-
V
V
|V(BO)+| - |V(BO)-
|
Breakover voltage symmetry I = I(BO), see fig: 1
-
-
VO
I(BO)
dV(BO)/dT
Output voltage
Breakover current
Temperature coefficient of
V(BO)
RL = 20 Ω; Circuit of fig: 2
V = V(BO)
7
-
V
-
µA
%/K
-
0.1
tr
Risetime
Ip = 0.5 A; Circuit of fig: 2
-
1.5
µs
February 1996
1
Rev 1.100
Philips Semiconductors
Product Specification
Silicon Bi-directional Trigger Device
BR100/03
I
VBO
D.U.T.
IT
500k
10k
I(BO)I
V(BO)III
I(BO)III
100nF
V
V(BO)I
10R
230 V, RMS, 50Hz
Set load resistance
to 20 Ohms when
Vo
measuring output voltage
50R
Adjust for Ip=0.5A
when measuring risetime
Fig.1. Current-voltage characteristics
Fig.2. Test circuit for output voltage and risetime.
MECHANICAL DATA
Dimensions in mm
4.5
max
0.56
max
1.95
max
24
min
24
min
Fig.3. SOD27.
February 1996
2
Rev 1.100
Philips Semiconductors
Product Specification
Silicon Bi-directional Trigger Device
BR100/03
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1996
3
Rev 1.100
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