BR211-240 [NXP]
Breakover diodes; 击穿二极管
| 型号： | BR211-240 |
| 厂家： | 
NXP |
| 描述： | Breakover diodes |
| 文件： | 总7页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
A range of bidirectional, breakover
diodes in an axial, hermetically
sealed, glass envelope. These
devices feature controlled breakover
voltage and high holding current
together with high peak current
SYMBOL
PARAMETER
MIN.
MAX. UNIT
BR211-140 to 280
V(BO)
IH
ITSM
Breakover voltage
140
150
-
280
-
V
mA
A
Holding current
Non-repetitive peak current
40
handling
capability.
include
Typical
applications
overvoltage
transient
protection
in
telecommunications equipment.
OUTLINE - SOD84
SYMBOL
XXX denotes voltage grade
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VD
Continuous voltage
Non repetitive peak current
-
75% of
V(BO)typ
40
V
ITSM1
10/320 µs impulse equivalent to
10/700 µs, 1.6 kV voltage impulse
(CCITT K17)
-
A
ITSM2
Non repetitive on-state current half sine wave; t = 10 ms;
Tj = 70 ˚C prior to surge
-
15
A
I2t
dIT/dt
I2t for fusing
tp = 10 ms
-
-
1.1
50
A2s
A/µs
Rate of rise of on-state current tp = 10 µs
after V(BO) turn-on
Ptot
PTM
Tstg
Ta
Continuous dissipation
Peak dissipation
Ta = 25˚C
tp = 1 ms; Ta = 25˚C
-
1.2
50
W
W
˚C
˚C
˚C
-
-65
-
Storage temperature
150
70
Operating ambient temperature off-state
Overload junction temperature on-state
Tvj
-
150
August 1996
1
Rev 1.200
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-e
Rth j-a
Zth j-a
Thermal resistance junction to
envelope
-
-
-
22
-
K/W
K/W
K/W
Thermal resistance junction to mounted as fig:12
ambient
105
2.62
Thermal impedance junction to tp = 1 ms
ambient
-
Rth e-tp
Rth e-a
Rth tp-a
Thermal resistance envelope to lead length = 5 mm
-
-
-
-
-
-
15
30
-
-
-
-
-
-
K/W
K/W
K/W
K/W
K/W
K/W
tie point
lead length = 10 mm
Thermal resistance envelope to lead length = 5 mm
ambient lead length = 10 mm
Thermal resistance tie point to mounted as fig:12
440
350
70
ambient
mounted with 1 cm2 copper
laminate per lead.
mounted with 2.25 cm2 copper
laminate per lead
55
-
45
-
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
1
VTM
On-state voltage
ITM = 2 A
-
-
2.5
V
V(BR)
V(BO)
Avalanche voltage (min)
Breakover voltage (max)
I(BR) = 10mA
I ≤ IS, tp = 100 µs
BR211-140
BR211-160
BR211-180
BR211-200
BR211-220
BR211-240
BR211-260
BR211-280
123
140
158
176
193
211
228
246
140
160
180
200
220
240
260
280
157
180
202
224
247
269
292
314
V
V
V
V
V
V
V
V
V
V
S(br)
Temperature coefficient of V(BR)
Holding current
-
+0.1
-
-
200
-
-
-
-
%/K
mA
mA
mA
µA
2
IH
Tj = 25˚C
150
100
10
-
Tj = 70˚C
3
IS4
Switching current
Off-state current
tp = 100 µs
1000
10
ID
VD = 85% V(BR)min, Tj = 70˚C
1 Measured under pulsed conditions to avoid excessive dissipation
2 The minimum current at which the diode will remain in the on-state
3 The avalanche current required to switch the diode to the on-state
4 Measured at maximum recommended continuous voltage. Illuminance ≤ 500 lux (daylight); relative
humidity < 65%.
August 1996
2
Rev 1.200
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dVD/dt
Linear rate of rise of off-state
voltage that will not trigger any
device
V(DM) = 85% V(BR)min; Tj = 70 ˚C
-
-
2000 V/µs
Cj
Off-state capacitance
VD = 0 V; f = 1 kHz to 1 MHz
-
-
100
pF
I
VT
ITSM / A
20
current
IT
ITSM2
time
15
10
5
IS
IH
V(BR)
I(BR)
V(BO)
ID
voltage
VD
0
1
Symbol
Symmetric BOD
10
100
1000
10000
Number of impulses
Fig.1. Definition of breakover diode characteristics.
Fig.3. Maximum permissible non-repetitive on-state
current based on sinusoidal currents; f = 50 Hz;
device triggered at the start of each pulse; Tj = 70˚C
prior to surge.
V(BR)(Tj)
V(BR)(25 C)
current
1.06
ITSM
100%
90%
1.04
1.02
1.00
0.98
0.96
0.94
0.92
0.90
50%
30%
0
time
-20
0
20
Tj / C
40
60
80
100
-40
10us
700us
Fig.2. Test waveform for high voltage impulse (ITSM1
)
Fig.4. Normalised avalanche breakdown voltage V(BR)
and V(BO) as a function of temperature.
according to CCITT vol IX-Rec K17.
August 1996
3
Rev 1.200
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
IT / A
20
IH / A
10
Tj = 25 C
Tj = 150 C
1
0.1
15
min
max
typ
10
0.01
0.001
5
0
50
100
150
-50
0
4
1
2
3
VT / V
Tj / C
Fig.5. On-state current as a function of on-state
voltage; tp = 200 µs to avoid excessive dissipation.
Fig.8. Minimum holding current as a function of
temperature.
Cj / pF
100
ID / uA
100
BR211-140
max
typ
10
BR211-280
10
1
0.1
1
-20
0
20
Tj / C
40
60
80
100
-40
1000
1
10
100
VD / V
Fig.6. Maximum off-state current as a function of
temperature.
Fig.9. Typical junction capacitance as a function of
off-state voltage, f = 1 MHz; Tj = 25˚C.
BR211
IS / A
10
Zth / (K/W)
1000
100
10
1
max
typ
0.1
t
p
P
0.01
1
D
min
t
0.001
0.1
0.1s
tp / s
10s
1000s
50
100
150
10us
1ms
-50
0
Tj / C
Fig.7. Switching current as a function of junction
temperature.
Fig.10. Transient thermal impedance. Zth j-a = f(tp).
August 1996
4
Rev 1.200
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
junction
Rth j-e
50
envelope
50
Rth e-tp
tie-point
Rth e-a
7
2
Rth tp-a
25
3
ambient
Fig.11. Components of thermal resistance,
Fig.12. Mounting on pcb used for Rth measurement.
Rthe −a.(Rthe −tp +Rthtp −a)
Rth j −a = Rth j −e +
(Rthe −a +Rthe −tp +Rthtp −a)
August 1996
5
Rev 1.200
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
MECHANICAL DATA
Dimensions in mm
5
max
0.81
max
3.15
max
4.3
max
28
min
28
min
Fig.13. SOD84.
August 1996
6
Rev 1.200
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1996
7
Rev 1.200
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