BRS212-280 [NXP]
Breakover diodes; 击穿二极管型号: | BRS212-280 |
厂家: | NXP |
描述: | Breakover diodes |
文件: | 总6页 (文件大小:35K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Breakover diodes
BRS212 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
A range of bidirectional, breakover
diodes in a two terminal, surface
mounting, plastic envelope. These
devices feature controlled breakover
voltage and high holding current
together with high peak current
handling capability. Their intended
application is protection of line based
SYMBOL PARAMETER
MIN. TYP. MAX. UNIT
V(BO)
Breakover voltage
BRS212-140
-
140
160
180
200
220
240
260
280
-
-
-
V
V
BRS212-160
-
BRS212-180
-
-
V
BRS212-200
-
-
V
BRS212-220
-
-
V
telecommunications
equipment
BRS212-240
-
-
V
against voltage transients.
BRS212-260
-
-
V
BRS212-280
-
150
-
-
V
IH
Holding current
Non-repetitive peak pulse
current (CCITT K17)
-
mA
A
IPP
-
40
OUTLINE - SOD106
SYMBOL
date code
XXX denotes voltage grade
YM
212
XXX
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VD
Continuous voltage
BRS212-140
-
-
-
-
-
-
-
-
-
105
120
135
150
165
180
195
210
40
V
V
V
V
V
V
V
V
A
BRS212-160
BRS212-180
BRS212-200
BRS212-220
BRS212-240
BRS212-260
BRS212-280
IPP
Non-repetitive peak pulse
current
5/310 µs impulse equivalent to
10/700 µs, 1.6 kV voltage impulse
(CCITT K17)
ITSM
Non repetitive surge peak
on-state current
half sine wave; t = 10 ms;
Tj = 70 ˚C prior to surge
tp = 10 ms
-
15
A
I2t
dIT/dt
I2t for fusing
-
-
1.1
50
A2s
A/µs
Rate of rise of on-state current tp = 10 µs
after V(BO) turn-on
Ptot
Continuous dissipation on
infinite heatsink
Tsp = 50˚C
-
4
W
PTM
Tstg
Tj
Peak dissipation
tp = 1 ms; Ta = 25˚C
-
50
W
˚C
˚C
˚C
Storage temperature
Operating junction temperature
- 40
150
150
260
-
-
TL
Maximum terminal temperature soldering time = 10 s
for soldering
January 1997
1
Rev 1.000
Philips Semiconductors
Product specification
Breakover diodes
BRS212 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-sp
Rth j-a
Zth j-a
Thermal resistance junction to
-
-
-
-
25
-
K/W
K/W
K/W
solder point
Thermal resistance junction to pcb mounted; minimum footprint
100
2.6
ambient
Thermal impedance junction to tp = 1 ms
ambient
-
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
TYPE
PARAMETER
Marking
Avalanche
voltage
Breakover
voltage
Off-state current
Critical rate of
rise of off-state
voltage
Conditions
IBR = 10 mA
ID ≤ IS
tp = 100 µs
Tj = 70˚C;
RH ≤ 65%
Tj = 70˚C
Symbol
Limits
Units
VBR
VBO
ID @ VD
max
dVD/dt @ VDM
max
min
typ
V
typ
max
V
V
V
µA
V
V/µs
V
BRS212-140
BRS212-160
BRS212-180
BRS212-200
BRS212-220
BRS212-240
BRS212-260
BRS212-280
212-140
212-160
212-180
212-200
212-220
212-240
212-260
212-280
123
140
158
176
193
211
228
246
140
160
180
200
220
240
260
280
140
160
180
200
220
240
260
280
157
180
202
224
247
269
292
314
10
10
10
10
10
10
10
10
105
120
135
150
165
180
195
210
2000
2000
2000
2000
2000
2000
2000
2000
105
120
135
150
165
180
195
210
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VT
IH
On-state voltage
Holding current1
ITM = 2 A; tp = 200 µs
Tj = 25˚C
-
-
-
2.5
V
150
100
10
-
-
mA
mA
mA
%/K
Tj = 70˚C
-
-
1000
-
IS
S(BR)
Switching current2
tp = 100 µs
200
+0.1
Temperature coefficient of
avalanche voltage
Cj
Junction capacitance
VD = 0 V, f = 1 kHz to 1 MHz
-
-
100
pF
1 The minimum current at which the diode will remain in the on-state
2 The avalanche current required to switch the diode to the on-state.
January 1997
2
Rev 1.000
Philips Semiconductors
Product specification
Breakover diodes
BRS212 series
V(BR)(Tj)
V(BR)(25 C)
VT
current
IT
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
0.90
IS
IH
V(BR)
I(BR)
V(BO)
ID
voltage
VD
Symbol
Symmetric BOD
-20
0
20
40
60
80
100
-40
Tj / C
Fig.1. Definition of breakover diode characteristics.
Fig.4. Normalised avalanche breakdown voltage V(BR)
and V(BO) as a function of temperature.
IT / A
20
current
Tj = 25 C
Tj = 150 C
I
PP
100%
90%
15
max
typ
50%
30%
10
5
0
time
0
4
1
2
3
5us
310us
VT / V
Fig.2. Test waveform for high voltage impulse (IPP)
according to CCITT vol IX-Rec K17.
Fig.5. On-state current as a function of on-state
voltage; tp = 200 µs to avoid excessive dissipation.
I
ITSM / A
ID / uA
100
20
15
10
5
ITSM
time
max
10
1
0.1
0
-20
0
20
Tj / C
40
60
80
100
-40
1
10
100
1000
10000
Number of impulses
Fig.3. Maximum permissible non-repetitive on-state
current based on sinusoidal currents; f = 50 Hz;
device triggered at the start of each pulse; Tj = 70˚C
prior to surge.
Fig.6. Maximum off-state current as a function of
temperature.
January 1997
3
Rev 1.000
Philips Semiconductors
Product specification
Breakover diodes
BRS212 series
Cj / pF
IS / A
10
100
10
1
1
0.1
BR211-140
BR211-280
max
typ
typ
0.01
0.001
min
50
100
150
-50
0
1000
1
10
100
VD / V
Tj / C
Fig.7. Switching current as a function of junction
temperature.
Fig.9. Typical junction capacitance as a function of
off-state voltage, f = 1 MHz; Tj = 25˚C.
BR211
IH / A
10
Zth / (K/W)
1000
100
10
1
min
0.1
t
p
P
0.01
1
D
t
0.001
0.1
0.1s
tp / s
10s
1000s
50
100
150
10us
1ms
-50
0
Tj / C
Fig.8. Minimum holding current as a function of
temperature.
Fig.10. Transient thermal impedance. Zth j-a = f(tp).
January 1997
4
Rev 1.000
Philips Semiconductors
Product specification
Breakover diodes
BRS212 series
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.2 g
5.5
5.1
4.5
4.3
2.3
2.0
0.2
3.3
2.7
0.05
2.8 1.6
2.4 1.4
Fig.11. SOD106.
Notes
1. For mounting and soldering instructions refer to publication SC18 "SMD Footprint Design and Soldering
Guidelines". Order code:9397 750 00505.
January 1997
5
Rev 1.000
Philips Semiconductors
Product specification
Breakover diodes
BRS212 series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
January 1997
6
Rev 1.000
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