BRY62-T [NXP]
Silicon Controlled Switch, SILICON CONTROLLED SWITCH;
| 型号： | BRY62-T |
| 厂家： | 
NXP |
| 描述： | Silicon Controlled Switch, SILICON CONTROLLED SWITCH 可控硅 开关 可控硅开关 |
| 文件： | 总12页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BRY62
Silicon controlled switch
Product specification
1999 Apr 22
Supersedes data of 1997 Jul 21
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
DESCRIPTION
PINNING
Silicon planar PNPN switch in a
SOT143B plastic package. It is an
integrated PNP/NPN transistor pair,
with all electrodes accessible.
PIN
DESCRIPTION
1
2
3
4
anode gate
anode
cathode
cathode gate
APPLICATIONS
• Switching applications.
MARKING
4
3
TYPE
NUMBER
MARKING
CODE
a
k
ag
BRY62
A51
kg
1
2
MBB068
Top view
MSB014
Fig.1 Simplified outline (SOT143B) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
NPN transistor
VCBO
VCER
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
open emitter
−
−
−
−
−
−
−
70
V
V
V
RBE = 10 kΩ
open collector
note 1
70
5
collector current (DC)
peak collector current
emitter current (DC)
175
175
−175
−2.5
mA
mA
mA
A
ICM
note 2
IE
IERM
repetitive peak emitter current
tp = 10 µs; δ = 0.01
PNP transistor
VCBO
VCEO
VEBO
IE
collector-base voltage
open emitter
open base
−
−
−
−
−
−70
−70
−70
175
2.5
V
collector-emitter voltage
emitter-base voltage
V
open collector
V
emitter current (DC)
mA
A
IERM
repetitive peak emitter current
tp = 10 µs; δ = 0.01
1999 Apr 22
2
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Combined device
Ptot
Tstg
Tj
total power dissipation
storage temperature
T
amb ≤ 25 °C
−
250
mW
−65
−
+150
150
°C
°C
°C
junction temperature
Tamb
operating ambient temperature
see Fig.14
−65
+150
Notes
1. Provided the IE rating is not exceeded.
2. During switching on, the device can withstand the discharge of a capacitor of a maximum value of 500 pF. This
capacitor is charged when the transistor is in cut-off condition, with a collector supply voltage of 160 V and a series
resistance of 100 kΩ.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
500
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
NPN transistor
ICER
collector cut-off current
VCE = 70 V; RBE = 10 kΩ
−
100
10
10
500
900
−
nA
µA
µA
mV
mV
VCE = 70 V; RBE = 10 kΩ; Tj = 150 °C
IC = 0; VEB = 5 V; Tj = 150 °C
IC = 10 mA; IB = 1 mA
−
IEBO
VCEsat
VBEsat
hFE
emitter cut-off current
collector-emitter saturation voltage
base-emitter saturation voltage
DC current gain
−
−
IC = 10 mA; IB = 1 mA
−
IC = 10 mA; VCE = 2 V
50
100
−
fT
transition frequency
IC = 10 mA; VCE = 2 V; f = 100 MHz
IE = ie = 0; VCB = 20 V; f = 1 MHz
IC = ic = 0; VEB = 1 V; f = 1 MHz
−
MHz
pF
Cc
collector capacitance
5
Ce
emitter capacitance
−
25
pF
PNP transistor
ICEO
IEBO
hFE
collector cut-off current
IB = 0; VCE = −70 V; Tj = 150 °C
IC = 0; VEB = −70 V; Tj = 150 °C
IE = 1 mA; VCB = −5 V
−
−
3
−10
−10
15
µA
µA
emitter cut-off current
DC current gain
Combined device
VAK
forward on-state voltage
RKG-K = 10 kΩ
IA = 50 mA; IAG = 0
−
−
−
−
1.4
1.9
1.2
1
V
IA = 50 mA; IAG = 0; Tj = − 55 °C
IA = 1 mA; IAG = 10 mA
V
V
IH
holding current
RKG-K = 10 kΩ; IAG = 10 mA;
VBB = −2 V; (see Fig.5)
mA
1999 Apr 22
3
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Switching times
ton
turn-on time
VKG-K = −0.5 to 4.5 V; RKG-K = 1 kΩ;
−
0.25
µs
see Figs 6 and 7
V
KG-K = −0.5 to 0.5 V; RKG-K = 10 kΩ
−
−
1.5
15
µs
µs
toff
turn-off time
RKG-K = 10 kΩ; see Figs 8 and 9
a (anode)
(e )
2
e
2
handbook, halfpage
ag (anode gate)
(c ,b )
PNP transistor
P
N
P
1
2
c ,b
N
P
N
1
2
b ,c
1
2
kg (cathode gate)
(b ,c )
NPN transistor
1
2
MBB681
e
1
k (cathode)
(e )
MBB680
1
Fig.2 Two transistor equivalent circuit.
Fig.3 PNPN silicon controlled switch structure.
1999 Apr 22
4
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
handbook, halfpage
a
I
handbook, halfpage
A
I
I
A
AG
I
AG
ag
DUT
a
ag
I
V
KG
AK
R
KG-K
kg
k
−I
kg
K
V
BB
k
MBB683
MBB682
Fig.4 Silicon controlled switch symbol.
Fig.5 Equivalent test circuit for holding current.
V
MBB687
i
handbook, halfpage
(V)
4.5
90 %
2.7 kΩ
handbook, halfpage
V
10 %
+12 V
AK
0
–0.5
16 kΩ
time
+50 V
R
KG-K
V
I
V
AG-K
MBB685
time
t
on
Fig.7 Pulse duration increased until dashed curve
disappears.
Fig.6 Test circuit for turn-on time.
1999 Apr 22
5
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
V
MBB686
handbAooKk, halfpage
(V)
+12 V
+50 V
16 kΩ
12
handbook, halfpage
C = C
opt
1 kΩ
2.7 kΩ
C
V
AK
t
q
C < C
mercury
wetted
contact
opt
0
time
R
KG-K
MBB684
– 12
Fig.9 Capacitance increased until C = Copt
dashed curve disappears.
Fig.8 Test circuit for turn-off time.
MBB584
MBB583
1.2
1.8
handbook, halfpage
handbook, halfpage
h
FE
X
h
FE
X
V
= 5 V
AG-K
0.8
1.4
2 V
0.4
1.0
0.6
0
0
50
100
0
50
100
150
I
(mA)
AG
o
( C)
T
amb
X is the value of hFE at IC = 10 mA; VAG-K = 2 V; Tamb = 25 °C.
X is the value of hFE at IAG = 10 mA; VAG-K = 2 V; Tamb = 25 °C.
Fig.10 Normalized DC current gain as a function of
anode gate current.
Fig.11 Normalized DC current gain as a function of
ambient temperature.
1999 Apr 22
6
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
MBB581
MBB587
1.2
1.2
handbook, halfpage
handbook, halfpage
I
H
V
X
AK
X
1.1
1
1
0.8
0.6
0.9
0.8
−50
0
50
100
150
( C)
50
0
50
100
T
150
o
o
( C)
T
amb
amb
X is the value of VAK at IC = 10 mA; IAG = 10 mA; IA = 1 mA;
VBB = −2 V; RKG-K = 10 kΩ; Tamb = 25 °C.
X is the value of IH at IC = 10 mA; IAG = 10 mA; VBB = −2 V;
Rkg-K = 10 kΩ; Tamb = 25 °C.
Fig.12 Normalized anode-cathode voltage as a
function of ambient temperature.
Fig.13 Normalized holding current as a function of
ambient temperature.
MBB580
300
handbook, halfpage
P
tot
(mW)
200
100
0
0
50
150
150
o
( C)
T
amb
Fig.14 Power derating curve.
1999 Apr 22
7
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
H
v
M
A
E
e
b
w
M
B
p
4
3
Q
A
A
1
c
1
2
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT143B
1999 Apr 22
8
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 22
9
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
NOTES
1999 Apr 22
10
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
NOTES
1999 Apr 22
11
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© Philips Electronics N.V. 1999
SCA63
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Printed in The Netherlands
115002/00/03/pp12
Date of release: 1999 Apr 22
Document order number: 9397 750 05727
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