BSH299 [NXP]
P-channel enhancement mode MOS transistor; P沟道增强型MOS晶体管
| 型号： | BSH299 |
| 厂家： | 
NXP |
| 描述： | P-channel enhancement mode MOS transistor |
| 文件： | 总12页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BSH299
P-channel enhancement mode
MOS transistor
1998 Feb 18
Objective specification
File under Discrete Semiconductors, SC13b
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
BSH299
FEATURES
PINNING - SOT363
• Low threshold voltage
PIN
SYMBOL
DESCRIPTION
• High-speed switching
1
2
3
4
5
6
d
d
g
s
d
d
drain
• No secondary breakdown
• Direct interface to C-MOS, TTL, etc.
drain
gate
source
drain
drain
APPLICATIONS
• Power management
• Battery powered applications e.g. cellular phones
• General purpose switch.
d
s
handbook, halfpage
6
1
5
2
4
3
DESCRIPTION
P-channel enhancement mode MOS transistor in a
SOT363 SMD package.
g
CAUTION
MAM396
Top view
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
PARAMETER
CONDITIONS
MIN.
MAX.
−50
UNIT
drain-source voltage (DC)
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
−
−
V
V
V
A
Ω
W
VGSO
VGSth
ID
open drain
±20
−2
ID = −1 mA; VDS = VGS
Ts = 80 °C
−0.8
−
−
−
−0.2
10
RDSon
Ptot
drain-source on-state resistance
total power dissipation
ID = −0.13 A; VGS = −10 V
Ts = 80 °C
0.7
1998 Feb 18
2
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
BSH299
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
CONDITIONS
MIN.
MAX.
−50
UNIT
VDS
VGSO
ID
−
−
−
−
−
−
−
V
V
A
A
open drain
±20
Ts = 80 °C; note 1
note 2
−0.2
−0.8
0.7
IDM
Ptot
peak drain current
total power dissipation
Ts = 80 °C; see Fig.2
W
W
W
°C
°C
T
amb = 25 °C; note 3; see Fig.2
amb = 25 °C; note 4; see Fig.2
0.98
0.66
+150
150
T
Tstg
Tj
storage temperature
−55
−55
operating junction temperature
Notes
1. Ts is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on a printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W.
4. Device mounted on a printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point; see Fig.4
100
K/W
1998 Feb 18
3
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
BSH299
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−50
TYP.
MAX. UNIT
V(BR)DSS drain-source breakdown voltage
VGS = 0; ID = −10 µA
VGS = VDS; ID = −1 mA
VGS = 0; VDS = −40 V
VGS = 0; VDS = −50 V
−
−
−
−
−
−
−
−
V
VGSth
IDSS
gate-source threshold voltage
drain-source leakage current
−0.8
−
−2
V
−100
−10
−60
±10
10
nA
µA
µA
nA
Ω
−
V
GS = 0; VDS = −50 V; Tj = 125 °C −
IGSS
gate leakage current
VGS = ±20 V; VDS = 0
−
−
RDSon
drain-source on-state resistance VGS = −10 V; ID = −0.13 A;
see Fig.10
yfs
Ciss
Coss
Crss
forward transfer admittance
input capacitance
VDS = −25 V; ID = −0.13 A
50
−
−
−
mS
pF
pF
pF
VGS = 0; VDS = −25 V; f = 1 MHz;
see Fig.7
25
15
3.5
45
25
12
output capacitance
−
reverse transfer capacitance
−
Switching times (see Figs 5 and 6)
ton
turn-on switching time
VGS = 0 to −10 V; VDD = −40 V;
ID = −0.2 A
−
−
3
7
−
−
ns
ns
toff
turn-off switching time
VGS = −10 to 0 V; VDD = −40 V;
ID = −0.2 A
1998 Feb 18
4
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
BSH299
MGL382
MGL383
−1
1
handbook, halfpage
handbook, halfpage
P
tot
(W)
pulsed
I
D
(A)
0.8
−1
−10
DC
0.6
0.4
0.2
−2
−10
−3
−10
0
0
−1
2
−10
−1
−10
−10
50
100
150
200
o
T
( C)
V
(V)
DS
s
Fig.2 Power derating curve.
Fig.3 SOAR.
MGL384
3
10
R
th j-s
(K/W)
t
(s) =
1.00
0.75
0.50
p
2
10
0.33
0.20
0.10
0.05
10
1
0.02
0.01
t
p
P
=
δ
T
0.00
t
t
p
T
−1
10
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
t
(s)
p
Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
1998 Feb 18
5
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
BSH299
handbook, halfpage
10 %
INPUT
handbook, halfpage
V
= −40 V
DD
90 %
10 %
OUTPUT
0 V
I
D
90 %
−10 V
50 Ω
t
t
off
on
MLD189
MBB690
Fig.5 Switching time test circuit.
Fig.6 Input and output waveforms.
MLD191
MLD197
80
−600
handbook, halfpage
handbook, halfpage
V
C
(pF)
GS = −10 V −7.5 V
−6 V
I
D
(mA)
60
40
20
−400
−5 V
−4 V
C
C
iss
−200
oss
−3 V
C
−2.5 V
rss
0
0
0
−10
−20
−30
0
−2
−4
−6
−8
−10
V
−12
(V)
V
(V)
DS
DS
VGS = 0; Tj = 25 °C; f = 1 MHz.
Tj = 25 °C.
Fig.7 Capacitance as a function of
drain-source voltage; typical values.
Fig.8 Output characteristics; typical values.
1998 Feb 18
6
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
BSH299
MLD196
MLD198
60
−600
handbook, halfpage
handbook, halfpage
R
V
= −2.5 V −3 V −4 V
−5 V
I
DSon
(Ω)
GS
D
(mA)
40
−400
20
−200
−7.5 V
−10 V
0
−1
0
0
2
3
−10
−10
−10
−2
−4
−6
−8
V
−10
(V)
I
(mA)
D
GS
Tj = 25 °C; tp = 300 µs; δ = 0.
VDS = −10 V; Tj = 25 °C.
Fig.10 Drain-source on-state resistance as a
Fig.9 Transfer characteristics; typical values.
function of drain current; typical values.
MLD194
MLD195
1.8
1.2
handbook, halfpage
handbook, halfpage
(1)
k
k
(2)
1.4
1.0
1.0
0.8
0.6
−50
0.6
0
50
100
150
−50
0
50
100
150
T (°C)
T (°C)
j
j
k = (RDSon at Tj)/(RDSon at 25 °C).
(1) ID = −130 mA; VGS = −10 V.
(2) ID = −20 mA; VGS = −2.4 V.
k = (VGSth at Tj)/(VGSth at 25 °C).
ID = −1 mA; VDS = VGS
.
Fig.11 Temperature coefficient of gate-source
threshold voltage as a function of junction
temperature; typical values.
Fig.12 Temperature coefficient of drain-source
on-resistance as a function of junction
temperature; typical values.
1998 Feb 18
7
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
BSH299
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT363
SC-88
1998 Feb 18
8
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
BSH299
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Feb 18
9
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
BSH299
NOTES
1998 Feb 18
10
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
BSH299
NOTES
1998 Feb 18
11
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© Philips Electronics N.V. 1997
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
135108/00/01/pp12
Date of release: 1998 Feb 18
Document order number: 9397 750 03223
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