BSP16 [NXP]
PNP high-voltage transistor; PNP型高压晶体管
| 型号： | BSP16 |
| 厂家： | 
NXP |
| 描述： | PNP high-voltage transistor |
| 文件： | 总8页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
BSP16
PNP high-voltage transistor
1999 Apr 28
Product specification
Supersedes data of 1998 Aug 04
Philips Semiconductors
Product specification
PNP high-voltage transistor
BSP16
FEATURES
PINNING
PIN
• High voltage (max. 350 V).
DESCRIPTION
1
2, 4
3
base
APPLICATIONS
collector
emitter
• Switching and amplification
• Especially used in telephony and automotive
applications.
4
handbook, halfpage
2, 4
DESCRIPTION
PNP high-voltage transistor in a SOT223 plastic package.
NPN complements: BSP19 and BSP20.
1
3
1
2
3
Top view
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−350
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
V
V
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
base current (DC)
open base
−300
−6
open collector
−200
−200
1.28
+150
150
mA
mA
W
IB
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C; note 1
−65
−
°C
°C
°C
Tamb
−65
+150
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 28
2
Philips Semiconductors
Product specification
PNP high-voltage transistor
BSP16
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
97
16
K/W
K/W
thermal resistance from junction to soldering point
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = −280 V
MIN. MAX. UNIT
ICBO
IEBO
hFE
VCEsat
Cc
−
−100
−100
120
−2
nA
nA
IC = 0; VEB = −6 V
−
IC = −50 mA; VCE = −10 V
IC = −50 mA; IB = −5 mA
IE = ie = 0; VCB = −10 V; f = 1 MHz
30
−
collector-emitter saturation voltage
collector capacitance
transition frequency
V
−
15
pF
fT
IC = −10 mA; VCE = −10 V; f = 100 MHz 15
−
MHz
1999 Apr 28
3
Philips Semiconductors
Product specification
PNP high-voltage transistor
BSP16
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
96-11-11
97-02-28
SOT223
1999 Apr 28
4
Philips Semiconductors
Product specification
PNP high-voltage transistor
BSP16
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 28
5
Philips Semiconductors
Product specification
PNP high-voltage transistor
BSP16
NOTES
1999 Apr 28
6
Philips Semiconductors
Product specification
PNP high-voltage transistor
BSP16
NOTES
1999 Apr 28
7
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© Philips Electronics N.V. 1999
SCA63
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Printed in The Netherlands
115002/00/04/pp8
Date of release: 1999 Apr 28
Document order number: 9397 750 05774
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