BSP33T/R [NXP]

1A, 80V, PNP, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN;
BSP33T/R
型号: BSP33T/R
厂家: NXP    NXP
描述:

1A, 80V, PNP, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN

光电二极管 晶体管
文件: 总6页 (文件大小:118K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BSP31; BSP32; BSP33  
PNP medium power transistors  
Product data sheet  
1999 Apr 26  
Supersedes data of 1997 Apr 08  
NXP Semiconductors  
Product data sheet  
PNP medium power transistors  
BSP31; BSP32; BSP33  
FEATURES  
PINNING  
PIN  
High current (max. 1 A)  
Low voltage (max. 80 V).  
DESCRIPTION  
1
2, 4  
3
base  
collector  
emitter  
APPLICATIONS  
Telephony and general industrial applications.  
4
handbook, halfpage  
DESCRIPTION  
2, 4  
PNP medium power transistor in a SOT223 plastic  
package. NPN complements: BSP41 and BSP43.  
1
3
1
2
3
Top view  
MAM288  
Fig.1 Simplified outline (SOT223) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
UNIT  
VCBO  
BSP31  
70  
V
V
BSP32; BSP33  
90  
VCEO  
collector-emitter voltage  
BSP31  
open base  
60  
80  
5  
V
V
V
A
A
BSP32; BSP33  
VEBO  
IC  
emitter-base voltage  
collector current (DC)  
peak collector current  
peak base current  
total power dissipation  
storage temperature  
junction temperature  
operating ambient temperature  
open collector  
1  
ICM  
IBM  
Ptot  
Tstg  
Tj  
2  
200  
1.3  
mA  
W
Tamb = 25 °C; note 1  
65  
+150  
150  
+150  
°C  
°C  
°C  
Tamb  
65  
Note  
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.  
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated  
Handbook”.  
1999 Apr 26  
2
NXP Semiconductors  
Product data sheet  
PNP medium power transistors  
BSP31; BSP32; BSP33  
THERMAL CHARACTERISTICS  
SYMBOL  
Rth j-a  
PARAMETER  
CONDITIONS  
note 1  
VALUE  
93  
UNIT  
K/W  
K/W  
thermal resistance from junction to ambient  
thermal resistance from junction to soldering point  
Rth j-s  
12  
Note  
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.  
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated  
Handbook”.  
CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
IE = 0; VCB = 60 V  
MIN. MAX. UNIT  
ICBO  
collector cut-off current  
100  
50  
nA  
μA  
nA  
IE = 0; VCB = 60 V; Tj = 150 °C  
IC = 0; VEB = 5 V  
IEBO  
hFE  
emitter cut-off current  
DC current gain  
BSP32  
100  
IC = 100 μA; VCE = 5 V; note 1  
IC = 100 mA; VCE = 5 V; note 1  
IC = 500 mA; VCE = 5 V; note 1  
10  
40  
30  
120  
DC current gain  
BSP31; BSP33  
IC = 100 μA; VCE = 5 V; note 1  
IC = 100 mA; VCE = 5 V; note 1  
IC = 500 mA; VCE = 5 V; note 1  
30  
100  
50  
300  
VCEsat  
collector-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1  
IC = 500 mA; IB = 50 mA; note 1  
250  
500  
1  
mV  
mV  
V
VBEsat  
base-emitter saturation voltage  
IC = 150 mA; IB = 15 mA; note 1  
IC = 500 mA; IB = 50 mA; note 1  
IE = ie = 0; VCB = 10 V; f = 1 MHz  
IC = ic = 0; VEB = 0.5 V; f = 1 MHz  
IC = 50 mA; VCE = 10 V; f = 100 MHz  
1.2  
20  
V
Cc  
Ce  
fT  
collector capacitance  
emitter capacitance  
transition frequency  
pF  
pF  
MHz  
120  
100  
Switching times (between 10% and 90% levels)  
ton  
toff  
turn-on time  
turn-off time  
ICon = 100 mA; IBon = 5 mA; IBoff = 5 mA  
500  
650  
ns  
ns  
Note  
1. Pulse test: tp 300 μs; δ ≤ 0.01.  
1999 Apr 26  
3
NXP Semiconductors  
Product data sheet  
PNP medium power transistors  
BSP31; BSP32; BSP33  
PACKAGE OUTLINE  
Plastic surface mounted package; collector pad for good heat transfer; 4 leads  
SOT223  
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X  
1
e
0
2
4 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
UNIT  
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8  
1.5  
0.10 0.80  
0.01 0.60  
3.1  
2.9  
0.32  
0.22  
6.7  
6.3  
3.7  
3.3  
7.3  
6.7  
1.1  
0.7  
0.95  
0.85  
mm  
4.6  
2.3  
0.2  
0.1  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
99-09-13  
SOT223  
SC-73  
1999 Apr 26  
4
NXP Semiconductors  
Product data sheet  
PNP medium power transistors  
BSP31; BSP32; BSP33  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
1999 Apr 26  
5
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal  
definitions and disclaimers. No changes were made to the technical content, except for package outline  
drawings which were updated to the latest version.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
115002/00/03/pp6  
Date of release: 1999 Apr 26  
Document order number: 9397 750 05772  

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