BSR20A [NXP]
PNP high-voltage transistors; PNP型高压晶体管
| 型号： | BSR20A |
| 厂家： | 
NXP |
| 描述： | PNP high-voltage transistors |
| 文件： | 总8页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
BSR20; BSR20A
PNP high-voltage transistors
1997 Apr 21
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors
Product specification
PNP high-voltage transistors
BSR20; BSR20A
FEATURES
PINNING
• Low current (max. 300 mA)
• High voltage (max. 150 V).
PIN
DESCRIPTION
1
2
3
base
emitter
APPLICATIONS
collector
• General purpose switching and amplification
• Telephony applications.
handbook, halfpage
3
3
2
DESCRIPTION
PNP high-voltage transistor in a SOT23 plastic package.
NPN complements: BSR19 and BSR19A.
1
1
2
MARKING
Top view
MAM256
TYPE NUMBER
BSR20
MARKING CODE
T35
T36
Fig.1 Simplified outline (SOT23) and symbol.
BSR20A
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
VCBO
open emitter
open base
BSR20
−
−
−130
V
V
BSR20A
−160
VCEO
collector-emitter voltage
BSR20
−
−
−
−
−120
−150
−600
250
V
V
BSR20A
ICM
Ptot
hFE
peak collector current
total power dissipation
DC current gain
BSR20
mA
Tamb ≤ 25 °C
mW
IC = −10 mA; VCE = −5 V
40
60
180
240
−
BSR20A
fT
transition frequency
IC = −10 mA; VCE = −10 V; f = 100 MHz 100
MHz
1997 Apr 21
2
Philips Semiconductors
Product specification
PNP high-voltage transistors
BSR20; BSR20A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
BSR20
−
−
−130
V
V
BSR20A
−160
VCEO
collector-emitter voltage
BSR20
open base
−
−
−
−
−
−
−
−120
−150
−5
V
V
V
BSR20A
VEBO
IC
ICM
IB
emitter-base voltage
collector current (DC)
peak collector current
base current
open collector
−300
−600
−100
250
mA
mA
mA
mW
°C
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C
−65
−
+150
150
°C
Tamb
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
UNIT
Rth j-a
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Apr 21
3
Philips Semiconductors
Product specification
PNP high-voltage transistors
BSR20; BSR20A
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
BSR20
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = −100 V
−
−
−100
nA
IE = 0; VCB = −100 V; Tamb = 100 °C
−100
µA
ICBO
collector cut-off current
BSR20A
IE = 0; VCB = −120 V
−
−
−
−50
−50
−50
nA
µA
nA
IE = 0; VCB = −120 V; Tamb = 100 °C
IC = 0; VEB = −4 V
IEBO
hFE
emitter cut-off current
DC current gain
BSR20
IC = −1 mA; VCE = −5 V
30
50
−
−
BSR20A
hFE
DC current gain
BSR20
IC = −10 mA; VCE = −5 V
IC = −50 mA; VCE = −5 V
40
60
180
240
BSR20A
hFE
DC current gain
BSR20
40
50
−
−
BSR20A
−
VCEsat
collector-emitter saturation
voltage
IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
I E = 0; VCB = −10 V; f = 1 MHz
−200
−500
6
mV
mV
pF
−
Cc
fT
collector capacitance
transition frequency
BSR20
−
IC = −10 mA; VCE = −10 V;
f = 100 MHz
100
100
400
300
MHz
MHz
BSR20A
1997 Apr 21
4
Philips Semiconductors
Product specification
PNP high-voltage transistors
BSR20; BSR20A
MGD813
200
h
FE
150
100
50
V
= −5 V
CE
0
−10
−1
2
3
−1
−10
−10
−10
I
mA
C
Fig.2 DC current gain; typical values.
1997 Apr 21
5
Philips Semiconductors
Product specification
PNP high-voltage transistors
BSR20; BSR20A
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1997 Apr 21
6
Philips Semiconductors
Product specification
PNP high-voltage transistors
BSR20; BSR20A
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Apr 21
7
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© Philips Electronics N.V. 1997
SCA54
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Printed in The Netherlands
117041/00/02/pp8
Date of release: 1997 Apr 21
Document order number: 9397 750 01403
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