BSR58TRL13 [NXP]
5mA, 40V, N-CHANNEL, Si, SMALL SIGNAL, JFET;
| 型号： | BSR58TRL13 |
| 厂家： | 
NXP |
| 描述： | 5mA, 40V, N-CHANNEL, Si, SMALL SIGNAL, JFET 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BSR56; BSR57; BSR58
N-channel FETs
April 1991
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
Product specification
N-channel FETs
BSR56; BSR57; BSR58
DESCRIPTION
Symmetrical silicon n-channel
depletion type junction field-effect
transistors in a plastic microminiature
envelope intended for application in
thick and thin-film circuits. The
transistors are intended for
3
handbook, halfpage
low-power, chopper or switching
applications in industrial service.
d
g
s
PINNING
1
2
1
2
3
= drain
= source
= gate
Top view
MAM385
Note
1. Drain and source are
interchangeable.
Fig.1 Simplified outline and symbol, SOT23.
Marking code
BSR56 = M4P
BSR57 = M5P
BSR58 = M6P
QUICK REFERENCE DATA
BSR56
max.
BSR57
40
BSR58
40 V
Drain-source voltage
±VDS
40
Total power dissipation up to Tamb = 40 °C
Drain current
Ptot
max.
250
250
250 mW
VDS = 15 V; VGS = 0
>
<
50
20
8 mA
IDSS
−
100
80 mA
Gate-source cut-off voltage
VDS = 15 V; ID = 0.5 nA
>
<
4
2
6
0.8 V
4 V
−V(P)GS
10
Drain-source resistance (on) at f = 1 kHz
ID = 0; VGS = 0
rds on
<
<
25
5
40
5
60 Ω
Feedback capacitance at f = 1 MHz
−VGS = 10 V; VDS = 0
Crs
5 pF
Turn-off time
VDD = 10 V; VGS = 0
ID = 20 mA; −VGSM = 10 V
ID = 10 mA; −VGSM = 6 V
ID = 5 mA; −VGSM = 4 V
toff
toff
toff
<
<
<
25
−
−
50
−
− ns
− ns
−
100 ns
April 1991
2
Philips Semiconductors
Product specification
N-channel FETs
BSR56; BSR57; BSR58
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
± VDS
VDGO
−VGSO
IGF
max.
max.
max.
max.
max.
40 V
40 V
Drain-gate voltage
Gate-source voltage
40 V
Forward gate current
50 mA
250 mW
Total power dissipation up to Tamb = 40 °C (note 1)
Storage temperature range
Junction temperature
Ptot
Tstg
−65 to +150 °C
Tj
max.
150 °C
THERMAL RESISTANCE
From junction to ambient (note 1)
Rth j-a
=
430 K/W
Notes
1. Mounted on a ceramic substrate of 8 mm × 10 mm × 0.7 mm.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Gate-source cut-off current
V
DS = 0 V; −VGS = 20 V
Drain cut-off current
DS = 15 V; −VGS = 10 V
−IGSS
max.
1.0 nA
1.0 nA
V
IDSX
BSR56
max.
BSR57
BSR58
Drain current
VDS = 15 V; VGS = 0
>
<
50
20
8 mA
IDSS
−
100
80 mA
Gate-source breakdown voltage
−IG = 1 µA; VDS = 0
−V(BR)GSS
>
40
40
40 V
Gate-source cut-off voltage
>
<
4
2
6
0.8 V
4 V
ID = 0,5 nA; VDS = 15 V
−V(P)GS
10
Drain-source voltage (on)
ID = 20 mA; VGS = 0
VDSon
VDSon
VDSon
<
<
<
750
−
−
500
−
− mV
− mV
ID = 10 mA; VGS = 0
ID = 5 mA; VGS = 0
−
400 mV
Drain-source resistance (on) at f = 1 kHz
ID = 0; VGS = 0; Ta = 25 °C
Feedback capacitance at f = 1 MHz
−VGS = 10 V; VDS = 0
rds on
<
<
25
5
40
5
60 Ω
Crss
5 pF
April 1991
3
Philips Semiconductors
Product specification
N-channel FETs
BSR56; BSR57; BSR58
BSR56
BSR57
BSR58
Switching times
VDD = 10 V; VGS = 0
Conditions ID and −VGSM
ID
=
=
<
<
<
20
10
5 mA
4 V
−VGSM
10
6
6
6
Delay time
Rise time
td
10 ns
10 ns
tr
3
4
Turn-off time
toff
25
50
100 ns
0
handbook, halfpage
V
handbook, halfpage
DD
V
i
R
V
GSM
V
o
t
200 ns
d
t
V
i
t
T.U.T
r
off
10%
50 Ω
V
o
MBK298
90%
MBK299
Fig.2 Switching times waveforms.
Fig.3 Test circuit.
BSR56; R =
BSR57; R =
464 Ω
953 Ω
MDA245
300
handbook, halfpage
BSR58; R = 1910 Ω
P
tot
(mW)
Pulse generator
200
tr = tf ≤ 1 ns
δ
= 0.02
Zo
= 50 Ω
100
Oscilloscope
tr
≤
≥
≤
0.75 ns
1 MΩ
Ri
Ci
0
0
2.5 pF
40
80
120
160
T
200
(°C)
amb
Fig.4 Power derating curve.
April 1991
4
Philips Semiconductors
Product specification
N-channel FETs
BSR56; BSR57; BSR58
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
April 1991
5
Philips Semiconductors
Product specification
N-channel FETs
BSR56; BSR57; BSR58
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1991
6
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