BSS84AKT [NXP]
马来西亚;
| 型号： | BSS84AKT |
| 厂家： | 
NXP |
| 描述： | 马来西亚 |
| 文件： | 总11页 (文件大小：860K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS84AKT
T416
SO
50 V, 150 mA P-channel Trench MOSFET
Rev. 2 — 17 Jul 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
ESD protection up to 1 kV
AEC-Q101 qualified
Trench MOSFET technology
1.3 Applications
Relay driver
High-side loadswitch
Switching circuits
High-speed line driver
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min Typ Max Unit
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
-50
20
V
V
VGS
-20
-
[1]
ID
VGS = -10 V; Tamb = 25 °C
-150 mA
Static characteristics
RDSon drain-source on-state
resistance
VGS = -10 V; ID = -100 mA;
Tj = 25 °C
-
4.5
7.5
Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
BSS84AKT
NXP Semiconductors
50 V, 150 mA P-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
S
D
gate
D
3
2
source
drain
3
G
1
2
SOT416 (SOT416)
S
sym146
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BSS84AKT
SOT416
plastic surface-mounted package; 3 leads
SOT416
4. Marking
Table 4.
Marking codes
Type number
BSS84AKT
Marking code
XA
BSS84AKT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 17 Jul 2012
2 of 11
BSS84AKT
NXP Semiconductors
50 V, 150 mA P-channel Trench MOSFET
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
-50
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-20
20
V
[1]
[1]
ID
VGS = -10 V; Tamb = 25 °C
VGS = -10 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
-
-150
-95
mA
mA
A
-
IDM
Ptot
peak drain current
-
-0.6
250
300
770
150
150
150
[2]
[1]
total power dissipation
-
mW
mW
mW
°C
-
Tsp = 25 °C
-
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
Tamb
Tstg
°C
°C
Source-drain diode
[1]
[3]
IS
source current
Tamb = 25 °C
HBM
-
-
-150
mA
V
ESD maximum rating
VESD
electrostatic discharge voltage
1000
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
001aao121
001aao122
120
120
P
I
der
(%)
der
(%)
80
80
40
0
40
0
-75
-25
25
75
125
175
-75
-25
25
75
125
175
T (°C)
j
T (°C)
j
Fig 1. Normalized total power dissipation as a
function of junction temperature
Fig 2. Normalized continuous drain current as a
function of junction temperature
BSS84AKT
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 17 Jul 2012
3 of 11
BSS84AKT
NXP Semiconductors
50 V, 150 mA P-channel Trench MOSFET
001aao137
-1
I
D
(A)
(1)
-1
-2
-3
-10
(2)
(3)
(4)
-10
-10
(5)
-1
2
-10
-1
-10
-10
V
DS
(V)
IDM is single pulse
(1) tp = 1 ms
(2) tp = 10 ms
(3) DC; Tsp = 25 °C
(4) tp = 100 ms
(5) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
BSS84AKT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 17 Jul 2012
4 of 11
BSS84AKT
NXP Semiconductors
50 V, 150 mA P-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
440
360
-
Max
510
415
160
Unit
K/W
K/W
K/W
[1]
[2]
thermal resistance from junction to ambient
in free air
-
-
-
Rth(j-sp)
thermal resistance from junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
017aaa031
3
10
duty cycle = 1
Z
th(j-a)
0.75
(K/W)
0.5
0.33
0.2
0.25
2
10
0.1
0.05
0.02
0.01
0
10
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa032
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
0.2
2
0.25
10
0.1
0.05
0.02
0.01
0
10
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 1 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BSS84AKT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 17 Jul 2012
5 of 11
BSS84AKT
NXP Semiconductors
50 V, 150 mA P-channel Trench MOSFET
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown
ID = -10 µA; VGS = 0 V; Tj = 25 °C
ID = -250 µA; VDS = VGS; Tj = 25 °C
-50
-
-
V
V
voltage
VGSth
gate-source threshold
voltage
-1.1
-1.6
-2.1
IDSS
drain leakage current
VDS = -50 V; VGS = 0 V; Tj = 25 °C
VDS = -50 V; VGS = 0 V; Tj = 150 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; ID = -100 mA; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-1
µA
µA
µA
µA
Ω
-
-2
IGSS
gate leakage current
-
-10
-10
7.5
13.5
8.5
-
-
RDSon
drain-source on-state
resistance
4.5
8
V
GS = -10 V; ID = -100 mA; Tj = 150 °C
VGS = -5 V; ID = -100 mA; Tj = 25 °C
forward transconductance VDS = -10 V; ID = -100 mA; Tj = 25 °C
Ω
5.7
150
Ω
gfs
mS
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = -25 V; ID = -200 mA; VGS = -5 V;
Tj = 25 °C
-
-
-
-
-
-
0.26
0.12
0.09
24
0.35
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
-
VDS = -25 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
36
-
Coss
Crss
4.5
reverse transfer
capacitance
1.3
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -30 V; RL = 250 Ω; VGS = -10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
13
11
48
25
26
-
ns
ns
ns
ns
turn-off delay time
fall time
96
-
Source-drain diode
VSD
source-drain voltage
IS = -115 mA; VGS = 0 V; Tj = 25 °C
-0.48 -0.85 -1.2
V
BSS84AKT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 17 Jul 2012
6 of 11
BSS84AKT
NXP Semiconductors
50 V, 150 mA P-channel Trench MOSFET
001aao124
001aao125
-3
-4
-5
-6
-0.20
-10
V
= -10 V -4.0 V -3.5 V
GS
I
D
I
D
(A)
(A)
-0.15
(3)
(2)
(1)
-10
-3.0 V
-0.10
-0.05
0
-10
-10
-2.5 V
0
-1
-2
-3
-4
0
-0.5
-1.0
-1.5
-2.0
-2.5
(V)
V
(V)
V
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = -5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
001aao126
001aao127
12
14
(1)
(2)
(3)
R
R
DSon
(Ω)
DSon
(Ω)
8
10
(4)
(5)
(1)
(2)
4
0
6
2
0
-0.1
-0.2
-0.3
-0.4
0
-2
-4
-6
-8
-10
(V)
I
D
(A)
V
GS
Tj = 25 °C
ID = -200 mA
(1) Tj = 150 °C
(2) Tj = 25 °C
(1) VGS = -3.0 V
(2) VGS = -3.5 V
(3) VGS = -4.0 V
(4) VGS = -5.0 V
(5) VGS = -10.0 V
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
BSS84AKT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 17 Jul 2012
7 of 11
BSS84AKT
NXP Semiconductors
50 V, 150 mA P-channel Trench MOSFET
001aao128
001aao129
-0.20
2.0
1.5
1.0
0.5
0
I
a
D
(A)
(1)
(2)
-0.15
-0.10
-0.05
0
(2)
(1)
0
-1
-2
-3
-4
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID x RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
001aao130
001aao131
2
-3
10
V
GS(th)
(V)
C
(pF)
(1)
-2
-1
0
(1)
(2)
(2)
10
(3)
(3)
1
-1
2
-60
0
60
120
180
-10
-1
-10
-10
T (°C)
j
V
DS
(V)
ID = -0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
f = 1 MHz, VGS = 0 V
(1) Ciss
(2) Coss
(3) minimum values
(3) Crss
Fig 12. Gate-source threshold voltage as a function of
junction temperature
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BSS84AKT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 17 Jul 2012
8 of 11
BSS84AKT
NXP Semiconductors
50 V, 150 mA P-channel Trench MOSFET
001aao132
-10
V
DS
V
GS
(V)
I
-8
-6
-4
-2
0
D
V
GS(pl)
V
V
GS(th)
GS
Q
Q
GS2
GS1
Q
Q
GD
GS
Q
G(tot)
003aaa508
0
0.2
0.4
0.6
Q
G
(nC)
ID = -0.2 A; VDS = -25 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Gate charge waveform definitions
001aao133
-0.3
I
S
(A)
-0.2
-0.1
(1)
(2)
0
0
-0.4
-0.8
-1.2
V
SD
(V)
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
BSS84AKT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 17 Jul 2012
9 of 11
BSS84AKT
NXP Semiconductors
50 V, 150 mA P-channel Trench MOSFET
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig 17. Duty cycle definition
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BSS84AKT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 17 Jul 2012
10 of 11
BSS84AKT
NXP Semiconductors
50 V, 150 mA P-channel Trench MOSFET
9. Package outline
Plastic surface-mounted package; 3 leads
SOT416
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
1
2
c
e
b
w
M
B
1
p
L
p
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
A
UNIT
b
c
D
E
e
e
H
L
p
Q
v
w
p
1
E
max
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1.75
1.45
0.45
0.15
0.23
0.13
0.95
0.60
mm
0.1
1
0.5
0.2
0.2
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-04
06-03-16
SOT416
SC-75
Fig 18. Package outline SOT416 (SOT416)
BSS84AKT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 17 Jul 2012
11 of 11
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