BT134W-500F-T [NXP]
TRIAC, 500 V, 1 A, 4 QUADRANT LOGIC LEVEL TRIAC;
| 型号： | BT134W-500F-T |
| 厂家： | 
NXP |
| 描述： | TRIAC, 500 V, 1 A, 4 QUADRANT LOGIC LEVEL TRIAC 栅 三端双向交流开关 光电二极管 栅极 |
| 文件： | 总9页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢀDISCRETE SEMICONDUCTORSꢀ
DATA SHEET
BT134W series
Triacs
Product specification
September 1997
ꢁꢂꢃ Semiconductorsꢀ
Product specification
Triacs
BT134W series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated triacs in a plastic
envelope suitable for surface
mounting, intended for use in
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
BT134W-
BT134W- 500F 600F 800F
BT134W- 500G 600G 800G
500
600
800
applications
bidirectional transient and blocking
voltage capability and high thermal
cycling performance. Typical
requiring
high
VDRM
Repetitive peak off-state
voltages
500
600
800
V
applications include motor control,
industrial and domestic lighting,
heating and static switching.
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak on-state
current
1
10
1
10
1
10
A
A
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
main terminal 1
4
T2
T1
2
main terminal 2
gate
3
G
2
3
1
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
-500
5001
-600
-800
800
VDRM
Repetitive peak off-state
voltages
-
-
6001
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak
on-state current
full sine wave; Tsp ≤ 108 ˚C
full sine wave; Tj = 25 ˚C prior to
surge
1
A
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 1.5 A; IG = 0.2 A;
dIG/dt = 0.2 A/μs
T2+ G+
-
-
-
10
11
0.5
A
A
I2t
dIT/dt
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
A2s
-
-
-
-
-
-
-
-
50
50
50
10
2
5
5
0.5
150
125
A/μs
A/μs
A/μs
A/μs
A
V
W
W
˚C
T2+ G-
T2- G-
T2- G+
IGM
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
VGM
PGM
PG(AV)
Tstg
Tj
over any 20 ms period
-40
-
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/μs.
September 1997
1
Rev 1.200
ꢀꢁꢂ Semiconductorꢃꢄ
Product specification
Triacs
BT134W series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-sp
Rth j-a
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
full or half cycle
-
-
15
K/W
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:14
-
-
156
70
-
-
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP.
MAX.
...F
UNIT
BT134W-
VD = 12 V; IT = 0.1 A
T2+ G+
...
...G
IGT
Gate trigger current
Latching current
Holding current
-
-
-
-
5
8
11
30
35
35
35
70
25
25
25
70
50
50
50
100
mA
mA
mA
mA
T2+ G-
T2- G-
T2- G+
VD = 12 V; IGT = 0.1 A
IL
T2+ G+
T2+ G-
-
-
-
-
-
7
16
5
7
5
20
30
20
30
15
20
30
20
30
15
30
45
30
45
30
mA
mA
mA
mA
mA
T2- G-
T2- G+
VD = 12 V; IGT = 0.1 A
IH
VT
VGT
On-state voltage
Gate trigger voltage
IT = 2 A
-
-
1.2
0.7
0.4
1.50
1.5
-
V
V
V
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A;
Tj = 125 ˚C
0.25
ID
Off-state leakage current VD = VDRM(max)
Tj = 125 ˚C
;
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BT134W-
VDM =67% VDRM(max)
Tj = 125 ˚C; exponential
waveform; gate open
circuit
VDM = 400 V; Tj = 95 ˚C;
IT(RMS) = 1 A;
dIcom/dt = 1.8 A/ms; gate
open circuit
ITM = 1.5 A;
...
100
...F
50
...G
200
dVD/dt
dVcom/dt
tgt
Critical rate of rise of
off-state voltage
;
250
50
2
-
-
-
V/μs
V/μs
μs
Critical rate of change of
commutating voltage
-
-
-
-
10
-
Gate controlled turn-on
time
VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/μs;
September 1997
2
Rev 1.200
ꢀꢁꢂ Semiconductorꢃꢄ
Product specification
Triacs
BT134W series
Ptot / W
1.4
IT(RMS) / A
Tsp(max) / C
= 180
104
107
110
1.2
1
108 C
1.2
1
1
120
90
0.8
0.6
0.4
0.2
0
113
116
0.8
0.6
0.4
0.2
0
60
30
119
122
125
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
Tsp / C
100
150
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.4. Maximum permissible rms current IT(RMS)
versus solder point temperature Tsp.
,
IT(RMS) / A
ITSM / A
2
1.5
1
1000
100
10
I
TSM
time
I
T
T
Tj initial = 25 C max
dIT/dt limit
T2- G+ quadrant
0.5
0
1
10us
100us
1ms
T / s
10ms
100ms
0.01
0.1
1
10
surge duration / s
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tsp ≤ 108˚C.
VGT(Tj)
VGT(25 C)
ITSM / A
12
10
8
1.6
1.4
1.2
1
I
TSM
time
I
T
T
Tj initial = 25 C max
6
4
0.8
0.6
0.4
2
0
1
10 100
Number of cycles at 50Hz
1000
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 1997
3
Rev 1.200
ꢀꢁꢂ Semiconductorꢃꢄ
Product specification
Triacs
BT134W series
IGT(Tj)
IGT(25 C)
IT / A
2
1.5
1
3
Tj = 125 C
Tj = 25 C
T2+ G+
T2+ G-
2.5
2
T2- G-
T2- G+
Vo = 1.0 V
Rs = 0.21 Ohms
typ
1.5
1
max
0.5
0
0.5
0
0
0.5
1
VT / V
1.5
2
-50
0
50
Tj / C
100
150
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
Zth j-sp (K/W)
100
10
3
2.5
2
unidirectional
bidirectional
1
1.5
1
t
P
D
p
0.1
0.01
t
0.5
0
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.11. Transient thermal impedance Zth j-sp, versus
pulse width tp.
dVcom/dt (V/us)
1000
IH(Tj)
IH(25C)
3
2.5
2
off-state dV/dt limit
BT134...G SERIES
BT134 SERIES
100
BT134...F SERIES
1.5
1
10
0.5
0
dIcom/dt = 5.1 3.9
A/ms
3
2.3 1.8 1.4
100
1
-50
0
50
Tj / C
100
150
0
50
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.
September 1997
4
Rev 1.200
ꢀꢁꢂ Semiconductorꢃꢄ
Product specification
Triacs
BT134W series
MOUNTING INSTRUCTIONS
Dimensions in mm.
3.8
min
1.5
min
2.3
6.3
1.5
min
(3x)
1.5
min
4.6
Fig.13. soldering pattern for surface mounting SOT223.
PRINTED CIRCUIT BOARD
Dimensions in mm.
36
18
60
4.5
4.6
9
10
7
15
50
Fig.14. PCB for thermal resistance and power rating for SOT223.
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 μm thick).
September 1997
5
Rev 1.200
ꢀꢁꢂ Semiconductors
Product specification
Triacs
BT134W series
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.11 g
6.7
6.3
B
3.1
2.9
0.32
0.24
0.2
M
A
A
4
0.10
0.02
7.3
6.7
3.7
3.3
16
max
13
2
3
1
10
max
1.05
0.85
0.80
0.60
2.3
1.8
max
M
0.1
(4x)
B
4.6
Fig.15. SOT223 surface mounting package.
Notes
1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines".
Order code: 9397 750 00505.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
6
Rev 1.200
NXP Semiconductors
Legal information
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