BT136F-500G [NXP]
Triacs; 双向可控硅
| 型号： | BT136F-500G |
| 厂家： | 
NXP |
| 描述： | Triacs |
| 文件： | 总7页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Triacs
BT136F series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated triacs in a full pack
plastic envelope, intended for use in
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
applications
requiring
high
BT136F-
500
600
800
bidirectional transient and blocking
voltage capability and high thermal
BT136F- 500F 600F 800F
BT136F- 500G 600G 800G
cycling
performance.
Typical
VDRM
Repetitive peak off-state
voltages
500
600
800
V
applications include motor control,
industrial and domestic lighting,
heating and static switching.
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak on-state
current
4
25
4
25
4
25
A
A
PINNING - SOT186
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
main terminal 1
case
T2
T1
2
main terminal 2
gate
3
G
1
2 3
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
-500
-600
-800
800
VDRM
Repetitive peak off-state
voltages
-
-
5001
6001
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak
on-state current
full sine wave; Ths ≤ 92 ˚C
full sine wave; Tj = 125 ˚C prior
to surge; with reapplied VDRM(max)
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 6 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
4
A
-
-
-
25
27
3.1
A
A
I2t
dIT/dt
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
A2s
-
50
50
50
10
2
5
5
0.5
150
125
A/µs
A/µs
A/µs
A/µs
A
T2+ G-
-
T2- G-
-
T2- G+
-
IGM
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
VGM
PGM
PG(AV)
Tstg
Tj
-
V
-
-
W
over any 20 ms period
W
-40
-
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
February 1996
1
Rev 1.100
Philips Semiconductors
Product specification
Triacs
BT136F series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Cisol
Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree
-
1500
V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
-
12
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-hs
Rth j-a
Thermal resistance
junction to heatsink
full or half cycle
with heatsink compound
without heatsink compound
in free air
-
-
-
-
-
55
5.5
7.2
-
K/W
K/W
K/W
Thermal resistance
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP.
MAX.
...F
UNIT
BT136F-
VD = 12 V; IT = 0.1 A
T2+ G+
...
...G
IGT
Gate trigger current
Latching current
Holding current
-
-
-
-
5
8
11
30
35
35
35
70
25
25
25
70
50
50
mA
mA
mA
mA
T2+ G-
T2- G-
50
T2- G+
100
IL
VD = 12 V; IGT = 0.1 A
T2+ G+
-
-
-
-
-
7
16
5
20
30
20
30
15
20
30
20
30
15
30
45
30
45
30
mA
mA
mA
mA
mA
T2+ G-
T2- G-
T2- G+
7
IH
VD = 12 V; IGT = 0.1 A
5
VT
On-state voltage
IT = 5 A
-
-
1.4
0.7
0.4
1.70
1.5
-
V
V
V
VGT
Gate trigger voltage
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A;
Tj = 125 ˚C
0.25
ID
Off-state leakage current VD = VDRM(max)
;
-
0.1
0.5
mA
Tj = 125 ˚C
February 1996
2
Rev 1.100
Philips Semiconductors
Product specification
Triacs
BT136F series
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BT136F-
...
...F
...G
dVD/dt
dVcom/dt
tgt
Critical rate of rise of
off-state voltage
VDM = 67% VDRM(max)V;
Tj = 125 ˚C; exponential
waveform; gate open
circuit
100
50
200
250
50
2
-
-
-
V/µs
V/µs
µs
Critical rate of change of
commutating voltage
VDM = 400 V; Tj = 95 ˚C;
IT(RMS) = 4 A;
-
-
-
-
10
-
dIcom/dt = 1.8 A/ms; gate
open circuit
Gate controlled turn-on
time
ITM = 6 A; VD = VDRM(max);
IG = 0.1 A; dIG/dt = 5 A/µs
ITSM / A
Ptot / W
Ths(max) / C
30
25
20
15
10
5
8
7
6
5
4
3
2
1
0
81
I
TSM
time
I
86.5
92
T
= 180
120
1
T
Tj initial = 125 C max
97.5
90
60
103
30
108.5
114
119.5
125
0
0
1
2
3
4
5
1
10
100
1000
IT(RMS) / A
Number of cycles at 50Hz
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
ITSM / A
1000
100
10
IT(RMS) / A
5
4
3
2
1
0
I
TSM
time
I
T
92 C
T
Tj initial = 125 C max
dIT/dt limit
T2- G+ quadrant
10us
100us
1ms
T / s
10ms
100ms
-50
0
50
100
150
Ths / C
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.4. Maximum permissible rms current IT(RMS)
versus heatsink temperature Ths.
,
February 1996
3
Rev 1.100
Philips Semiconductors
Product specification
Triacs
BT136F series
IL(Tj)
IL(25 C)
IT(RMS) / A
12
3
2.5
2
10
8
6
1.5
1
4
2
0.5
0
0
0.01
0.1
1
10
-50
0
50
Tj / C
100
150
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Ths ≤ 92˚C.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
IH(Tj)
IH(25C)
VGT(Tj)
VGT(25 C)
3
2.5
2
1.6
1.4
1.2
1
1.5
1
0.8
0.6
0.4
0.5
0
-50
0
50
Tj / C
100
150
-50
0
50
100
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
IGT(Tj)
IGT(25 C)
IT / A
12
10
8
Tj = 125 C
Tj = 25 C
3
2.5
2
T2+ G+
T2+ G-
T2- G-
T2- G+
typ
max
Vo = 1.27 V
Rs = 0.091 ohms
6
1.5
1
4
2
0.5
0
0
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
February 1996
4
Rev 1.100
Philips Semiconductors
Product specification
Triacs
BT136F series
dVcom/dt (V/us)
Zth j-hs (K/W)
10
1000
100
10
with heatsink compound
off-state dV/dt limit
BT136...G SERIES
without heatsink compound
unidirectional
BT136 SERIES
1
0.1
bidirectional
BT136...F SERIES
t
P
D
p
t
dIcom/dt = 5.1 3.9
A/ms
3
2.3 1.8 1.4
0.01
1
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
0
50
100
150
Tj / C
Fig.11. Transient thermal impedance Zth j-hs, versus
pulse width tp.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.
February 1996
5
Rev 1.100
Philips Semiconductors
Product specification
Triacs
BT136F series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.2
max
5.7
max
3.2
3.0
4.4
max
0.9
0.5
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
not tinned
4.4
13.5
min
1
2
3
0.9
0.7
M
0.4
0.55 max
1.3
2.54
5.08
top view
Fig.13. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Accessories supplied on request: refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
February 1996
6
Rev 1.100
Philips Semiconductors
Product specification
Triacs
BT136F series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1996
7
Rev 1.100
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