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BT139B-800G,118 [NXP]

BT139B-800G;
BT139B-800G,118
型号： BT139B-800G,118
厂家： NXP    NXP
描述：

BT139B-800G

栅 三端双向交流开关 栅极
文件： 总12页 (文件大小：65K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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BT139B series  
Triacs  
Rev. 04 — 9 July 2004  
Product data sheet  
1. Product profile  
1.1 General description  
Passivated triacs in a SOT404 SMD plastic package intended for use in applications  
requiring high bidirectional transient and blocking voltage capability.  
1.2 Features  
■ High thermal cycling performance.  
1.3 Applications  
■ Motor control  
■ Industrial and domestic lighting, heating  
and static switching.  
1.4 Quick reference data  
■ VDRM ≤ 600 V (BT139B-600)  
■ VDRM ≤ 600 V (BT139B-600F)  
■ VDRM ≤ 600 V (BT139B-600G)  
■ VDRM ≤ 800 V (BT139B-800)  
■ VDRM ≤ 800 V (BT139B-800F)  
■ VDRM ≤ 800 V (BT139B-800G)  
■ IT(RMS) ≤ 16 A  
■ ITSM ≤ 155 A.  
2. Pinning information  
Table 1:  
Discrete pinning  
Pin  
1
Description  
main terminal 1  
main terminal 2  
gate  
Simplified outline  
Symbol  
T2  
T1  
G
2
mb  
3
sym051  
mb  
main terminal 2  
2
1
3
SOT404 (D2-PAK)  
 
 
 
 
 
BT139B series  
Philips Semiconductors  
Triacs  
3. Ordering information  
Table 2:  
Ordering information  
Type number  
Package  
Name  
-
Description  
Version  
BT139B-600  
BT139B-600F  
BT139B-600G  
BT139B-800  
BT139B-800F  
BT139B-800G  
plastic single-ended surface mounted package (Philips version of  
D2-PAK); 3 leads (one lead cropped)  
SOT404  
4. Limiting values  
Table 3:  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
VDRM  
repetitive peak off-state voltage  
BT139B-600  
[1]  
-
-
-
600  
800  
16  
V
V
A
BT139B-800  
IT(RMS)  
RMS on-state current  
full sinewave;  
T
mb ≤ 99 °C; Figure 4  
and Figure 5  
ITSM  
non-repetitive peak on-state current full sine wave;  
Tj = 25 °C prior to  
surge; Figure 2 and  
Figure 3  
t = 20 ms  
-
-
-
155  
170  
120  
A
t = 16.7 ms  
A
A2s  
I2t  
I2t for fusing  
t = 10 ms  
dIT/dt  
repetitive rate of rise of on-state  
current after triggering  
ITM = 20 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
T2+ G+  
T2+ G−  
T2− G−  
T2− G+  
-
50  
50  
50  
10  
2
A/µs  
A/µs  
A/µs  
A/µs  
A
-
-
-
IGM  
peak gate current  
peak gate voltage  
peak gate power  
-
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
5
V
-
5
W
average gate power  
storage temperature  
junction temperature  
over any 20 ms period  
-
0.5  
+150  
125  
W
−40  
°C  
-
°C  
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The  
rate of rise of current should not exceed 15 A/µs.  
9397 750 13359  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 04.00 — 9 July 2004  
2 of 12  
 
 
 
BT139B series  
Philips Semiconductors  
Triacs  
001aab093  
95  
25  
P
tot  
T
mb(max)  
α =  
(W)  
20  
(°C)  
180  
101  
107  
113  
119  
125  
120  
90  
15  
10  
60  
30  
α
5
0
α
0
5
10  
15  
20  
I
(A)  
T(RMS)  
α = conduction angle.  
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values.  
001aab102  
160  
I
TSM  
(A)  
I
I
TSM  
T
120  
T
t
T
= 25°C max  
j initial  
80  
40  
0
2
3
1
10  
10  
10  
n
f = 50 Hz.  
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum  
values.  
9397 750 13359  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 04.00 — 9 July 2004  
3 of 12  
BT139B series  
Philips Semiconductors  
Triacs  
001aab092  
3
10  
I
TSM  
(A)  
2
10  
(1)  
(2)  
I
I
TSM  
T
T
t
T
= 25°C max  
j initial  
10  
10  
−2  
−1  
2
10  
1
10  
10  
T (ms)  
tp ≤ 20 ms.  
(1) dIT/dt limit.  
(2) T2− G+ quadrant.  
Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values.  
001aab091  
001aab090  
20  
50  
I
T(RMS)  
(A)  
I
T(RMS)  
(A)  
(1)  
40  
30  
20  
10  
0
15  
10  
5
0
−50  
−2  
−1  
0
50  
100  
150  
10  
10  
1
10  
T
(°C)  
surge duration (s)  
mb  
f = 50 Hz; Tmb ≤ 99 °C.  
(1) Tmb = 99 °C.  
Fig 4. RMS on-state current as a function of surge  
duration; maximum values.  
Fig 5. RMS on-state current as a function of mounting  
base temperature; maximum values.  
9397 750 13359  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 04.00 — 9 July 2004  
4 of 12  
BT139B series  
Philips Semiconductors  
Triacs  
5. Thermal characteristics  
Table 4:  
Symbol  
Rth(j-mb)  
Thermal characteristics  
Parameter  
Conditions  
Typ  
Max  
1.2  
1.7  
-
Unit  
K/W  
K/W  
K/W  
thermal resistance from junction to  
mounting base  
full cycle; Figure 6  
half cycle; Figure 6  
-
-
Rth(j-a)  
thermal resistance from junction to  
ambient  
minimum footprint;  
FR4 board  
55  
001aab098  
10  
Z
th(j-mb)  
(K/W)  
(1)  
(2)  
1
−1  
−2  
−3  
10  
10  
10  
P
D
t
t
p
−5  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
10  
1
10  
t
(s)  
p
(1) Unidirectional.  
(2) Bidirectional.  
Fig 6. Transient thermal impedance as a function of pulse width.  
9397 750 13359  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 04.00 — 9 July 2004  
5 of 12  
 
 
BT139B series  
Philips Semiconductors  
Triacs  
6. Static characteristics  
Table 5:  
Static characteristics  
Tj = 25 °C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
BT139B  
Min Typ  
BT139B-F  
BT139B-G  
Max  
Unit  
Max Min Typ Max Min Typ  
IGT  
gate trigger  
current  
VD = 12 V;  
IT = 0.1 A;  
Figure 8  
T2+ G+  
T2+ G−  
T2− G−  
T2− G+  
-
-
-
-
5
35  
35  
35  
70  
-
-
-
-
5
25  
25  
25  
70  
-
-
-
-
5
50  
50  
50  
mA  
mA  
mA  
8
8
8
10  
22  
10  
22  
10  
22  
100 mA  
IL  
latching current VD = 12 V;  
GT = 0.1 A;  
I
Figure 10  
T2+ G+  
T2+ G−  
-
-
-
-
-
7
40  
60  
40  
60  
45  
-
-
-
-
-
7
40  
60  
40  
60  
45  
-
-
-
-
-
7
60  
90  
60  
90  
60  
mA  
mA  
mA  
mA  
mA  
20  
8
20  
8
20  
8
T2− G−  
T2− G+  
10  
6
10  
6
10  
6
IH  
holding current VD = 12 V;  
I
GT = 0.1 A;  
Figure 11  
VT  
on-state voltage IT = 20 A;  
Figure 9  
-
-
1.2  
0.7  
1.6  
1.5  
-
-
1.2  
0.7  
1.6  
1.5  
-
-
1.2  
0.7  
1.6  
1.5  
V
V
VGT  
gate trigger  
voltage  
VD = 12 V;  
IT = 0.1 A;  
Figure 7  
VD = 400 V;  
IT = 0.1 A;  
Tj = 125 °C  
0.25 0.4  
-
0.25 0.4  
-
0.25 0.4  
-
V
ID  
off-state  
VD = VDRM(max)  
;
-
0.1  
0.5  
-
0.1  
0.5  
-
0.1  
0.5  
mA  
leakage current Tj = 125 °C  
9397 750 13359  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 04.00 — 9 July 2004  
6 of 12  
 
BT139B series  
Philips Semiconductors  
Triacs  
7. Dynamic characteristics  
Table 6:  
Dynamic characteristics  
Conditions  
Symbol Parameter  
BT139B  
Min Typ  
200 250  
BT139B-F  
Max Min Typ Max Min Typ  
200 250  
BT139B-G  
Unit  
Max  
dVD/dt  
critical rate of VDM = 67 %  
rise of off-state VDRM(max)  
voltage Tj = 125 °C;  
-
-
-
50  
250  
20  
2
-
-
-
-
-
-
V/µs  
;
exponential  
waveform; gate  
open circuit  
dVcom/dt critical rate of  
change of  
V
DM = 400 V;  
Tj = 95 °C;  
IT(RMS) = 16 A;  
dIcom/dt = 7.2 A/ms;  
gate open circuit;  
Figure 12  
10  
20  
-
10  
20  
V/µs  
commutating  
voltage  
tgt  
gate controlled ITM = 20 A;  
-
2
-
-
2
µs  
turn-on time  
VD = VDRM(max)  
IG = 0.1 A;  
;
dIG/dt = 5 A/µs  
001aab101  
001aab089  
1.6  
3
V
I
GT(Tj)  
GT(Tj)  
V
I
GT(25°C)  
GT(25°C)  
(1)  
(2)  
(3)  
(4)  
1.2  
2
0.8  
1
0.4  
−50  
0
−50  
0
50  
100  
150  
0
50  
100  
150  
T (°C)  
j
T (°C)  
j
(1) T2+ G+.  
(2) T2− G−.  
(3) T2− G−.  
(4) T2− G+.  
Fig 7. Normalized gate trigger voltage as a function of  
junction temperature.  
Fig 8. Normalized gate trigger current as a function of  
junction temperature.  
9397 750 13359  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 04.00 — 9 July 2004  
7 of 12  
 
BT139B series  
Philips Semiconductors  
Triacs  
001aab100  
001aab094  
3
50  
I
T
I
(A)  
40  
L(Tj)  
(1)  
(2)  
(3)  
I
L(25°C)  
2
30  
20  
10  
0
1
0
−50  
0
50  
100  
150  
0
1
2
3
T (°C)  
j
V
(V)  
T
VO = 1.195 V.  
RS = 0.018 Ω.  
(1) Tj = 125 °C; typical values.  
(2) Tj = 25 °C; maximum values.  
(3) Tj = 125 °C; maximum values.  
Fig 9. On-state current characteristics.  
Fig 10. Normalized latching current as a function of  
junction temperature.  
001aab099  
001aab103  
3
3
10  
dV/dt  
I
H(Tj)  
(V/µs)  
(1)  
I
H(25°C)  
(2)  
(3)  
2
2
10  
(4) 16 12  
9.3 7.2 5.6  
1
10  
0
−50  
1
0
50  
100  
150  
1
50  
100  
150  
T (°C)  
j
T (°C)  
j
The triac should commutate when dIT/dt is below the  
value on the appropriate curve for pre-commutation  
dIT/dt.  
(1) BT139B SERIES.  
(2) BT139B...G SERIES.  
(3) BT139B...F SERIES.  
(4) dIcom/dt = 20 A/ms.  
Fig 11. Normalized holding current as a function of  
junction temperature.  
Fig 12. Critical rate of change of commutating voltage  
as a function of junction temperature; minimum  
values.  
9397 750 13359  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 04.00 — 9 July 2004  
8 of 12  
BT139B series  
Philips Semiconductors  
Triacs  
8. Package outline  
2
Plastic single-ended surface mounted package (Philips version of D -PAK); 3 leads  
(one lead cropped)  
SOT404  
A
A
E
1
mounting  
base  
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
D
E
A
A
b
UNIT  
c
D
e
L
H
Q
1
1
p
D
max.  
4.50  
4.10  
1.40  
1.27  
0.85  
0.60  
0.64  
0.46  
1.60  
1.20  
10.30  
9.70  
2.90 15.80 2.60  
2.10 14.80 2.20  
mm  
11  
2.54  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
99-06-25  
01-02-12  
SOT404  
Fig 13. Package outline.  
9397 750 13359  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 04.00 — 9 July 2004  
9 of 12  
 
BT139B series  
Philips Semiconductors  
Triacs  
9. Revision history  
Table 7:  
Document ID  
BT139B_SERIES_4 20040709  
Modifications: • Data sheet updated to latest standards.  
Revision history  
Release date Data sheet status  
Product data sheet  
Change notice Order number  
Supersedes  
-
9397 750 13359 BT139B_SERIES_3  
BT139B_SERIES_3 20030401  
BT139B_SERIES_2 20010701  
BT139B_SERIES_1 19971001  
Product specification  
Product specification  
Product specification  
-
-
-
-
-
-
BT139B_SERIES_2  
BT139B_SERIES_1  
-
9397 750 13359  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 04.00 — 9 July 2004  
10 of 12  
 
BT139B series  
Philips Semiconductors  
Triacs  
10. Data sheet status  
Level Data sheet status[1] Product status[2] [3]  
Definition  
I
Objective data  
Development  
This data sheet contains data from the objective specification for product development. Philips  
Semiconductors reserves the right to change the specification in any manner without notice.  
II  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification. Supplementary data will be published  
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in  
order to improve the design and supply the best possible product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips Semiconductors reserves the  
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant  
changes will be communicated via a Customer Product/Process Change Notification (CPCN).  
[1]  
[2]  
Please consult the most recently issued data sheet before initiating or completing a design.  
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at  
URL http://www.semiconductors.philips.com.  
[3]  
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
11. Definitions  
12. Disclaimers  
Short-form specification — The data in a short-form specification is  
extracted from a full data sheet with the same type number and title. For  
detailed information see the relevant data sheet or data handbook.  
Life support — These products are not designed for use in life support  
appliances, devices, or systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips Semiconductors  
customers using or selling these products for use in such applications do so  
at their own risk and agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition — Limiting values given are in accordance with  
the Absolute Maximum Rating System (IEC 60134). Stress above one or  
more of the limiting values may cause permanent damage to the device.  
These are stress ratings only and operation of the device at these or at any  
other conditions above those given in the Characteristics sections of the  
specification is not implied. Exposure to limiting values for extended periods  
may affect device reliability.  
Right to make changes — Philips Semiconductors reserves the right to  
make changes in the products - including circuits, standard cells, and/or  
software - described or contained herein in order to improve design and/or  
performance. When the product is in full production (status ‘Production’),  
relevant changes will be communicated via a Customer Product/Process  
Change Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these products, conveys no  
license or title under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that these products are  
free from patent, copyright, or mask work right infringement, unless otherwise  
specified.  
Application information — Applications that are described herein for any  
of these products are for illustrative purposes only. Philips Semiconductors  
make no representation or warranty that such applications will be suitable for  
the specified use without further testing or modification.  
13. Contact information  
For additional information, please visit: http://www.semiconductors.philips.com  
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com  
9397 750 13359  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 04 — 9 July 2004  
11 of 12  
BT139B series  
Philips Semiconductors  
Triacs  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5  
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6  
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11  
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Contact information . . . . . . . . . . . . . . . . . . . . 11  
3
4
5
6
7
8
9
10  
11  
12  
13  
© Koninklijke Philips Electronics N.V. 2004  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior  
written consent of the copyright owner. The information presented in this document does  
not form part of any quotation or contract, is believed to be accurate and reliable and may  
be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under  
patent- or other industrial or intellectual property rights.  
Date of release: 9 July 2004  
Document order number: 9397 750 13359  
Published in The Netherlands  

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