BT151-1000RT [NXP]
12 A thyristor high blocking voltage high operating temperature; 12晶闸管阻断高电压高工作温度
| 型号： | BT151-1000RT |
| 厂家： | 
NXP |
| 描述： | 12 A thyristor high blocking voltage high operating temperature |
| 文件： | 总12页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BT151-1000RT
12 A thyristor high blocking voltage high operating
temperature
Rev. 01 — 6 August 2007
Product data sheet
1. Product profile
1.1 General description
Passivated thyristor in a SOT78 plastic package.
1.2 Features
I High thermal cycling performance
I Tj is 150 °C capable
I VDRM, VRRM is 1000 V capable
1.3 Applications
I Motor control
I Static switching
I Ignition circuits
I Protection circuits
1.4 Quick reference data
I VDRM ≤ 1000 V
I IT(RMS) ≤ 12 A
I IGT ≤ 15 mA
I Tj ≤ 150 °C
I VRRM ≤ 1000 V
I ITSM ≤ 120 A (t = 10 ms)
2. Pinning information
Table 1.
Pinning
Pin
1
Description
Simplified outline
Symbol
cathode (K)
mb
A
K
2
anode (A)
G
3
gate (G)
sym037
mb
mounting base; connected to anode
1
2 3
SOT78 (3-lead TO-220AB)
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
3. Ordering information
Table 2.
Ordering information
Type number
Package
Name
Description
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
Version
BT151-1000RT
SC-46
SOT78
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDRM
Parameter
Conditions
Min
Max
1000
1000
7.5
Unit
V
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
-
-
-
VRRM
V
IT(AV)
half sine wave; Tmb ≤ 134 °C;
A
see Figure 1
IT(RMS)
ITSM
RMS on-state current
all conduction angles; see Figure 4
and 5
-
12
A
non-repetitive peak on-state
current
half sine wave; Tj = 25 °C prior to
surge; see Figure 2 and 3
t = 10 ms
t = 8.3 ms
t = 10 ms
-
-
-
-
120
131
72
A
A
A2s
I2t
I2t for fusing
dIT/dt
rate of rise of on-state current
ITM = 20 A; IG = 50 mA;
50
A/µs
dIG/dt = 50 mA/µs
IGM
peak gate current
peak gate power
-
2
A
PGM
PG(AV)
Tstg
Tj
-
5
W
W
°C
°C
average gate power
storage temperature
junction temperature
over any 20 ms period
-
0.5
+150
150
−40
-
BT151-1000RT_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 6 August 2007
2 of 12
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
003aab830
a = 1.57
15
P
tot
(W)
1.9
2.2
10
2.8
4
conduction form
angle
(degrees)
factor
a
5
0
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
0
2
4
6
8
I
(A)
T(AV)
Form factor a = IT(RMS) / IT(AV)
Fig 1. Total power dissipation as a function of average on-state current; maximum values
003aab829
160
I
TSM
(A)
120
80
40
0
I
I
T
TSM
t
T initial = 25 °C max
t
p
j
2
3
1
10
10
10
n (number of cycles)
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT151-1000RT_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 6 August 2007
3 of 12
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
001aaa956
3
10
I
TSM
(A)
dl /dt limit
T
2
10
I
I
T
TSM
t
T initial = 25 °C max
t
p
j
10
10
−5
−4
−3
−2
10
10
10
t
(s)
p
tp ≤ 10 ms
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
003aab828
001aaa954
16
25
I
T(RMS)
(A)
I
T(RMS)
(A)
20
15
10
5
12
8
4
0
−50
0
10
−2
−1
0
50
100
150
10
1
10
T
(°C)
surge duration (s)
mb
f = 50 Hz; Tmb ≤ 134 °C
Fig 4. RMS on-state current as a function of surge
duration for sinusoidal currents
Fig 5. RMS on-state current as a function of mounting
base temperature; maximum values
BT151-1000RT_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 6 August 2007
4 of 12
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
5. Thermal characteristics
Table 4.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to see Figure 6
mounting base
-
-
1.3
K/W
Rth(j-a)
thermal resistance from junction to in free air
ambient
-
60
-
K/W
001aaa962
10
Z
th(j-mb)
(K/W)
1
−1
10
t
p
P
δ =
T
−2
10
t
t
p
T
−3
10
−5
−4
−3
−2
−1
10
10
10
10
10
1
10
t
(s)
p
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width
BT151-1000RT_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 6 August 2007
5 of 12
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
6. Characteristics
Table 5.
Characteristics
Tj = 25 °C unless otherwise stated.
Symbol Parameter
Static characteristics
IGT gate trigger current
IL
Conditions
Min
Typ
Max
Unit
VD = 12 V; IT = 100 mA; see Figure 8
2
-
-
-
15
40
mA
mA
latching current
holding current
VD = 12 V; IGT = 100 mA; see
Figure 10
IH
VD = 12 V; IGT = 100 mA; see
Figure 11
-
-
-
20
mA
V
VT
on-state voltage
IT = 23 A
1.4
1.75
VGT
gate trigger voltage
IT = 100 mA; see Figure 7
VD = 12 V
-
0.6
0.4
0.5
0.5
1.5
-
V
VD = VDRM(max); Tj = 150 °C
VR = VDRM(max); Tj = 150 °C
VR = VRRM(max); Tj = 150 °C
0.25
V
ID
IR
off-state current
reverse current
-
-
2.5
2.5
mA
mA
Dynamic characteristics
dVD/dt
rate of rise of off-state VDM = 0.67 × VDRM(max); Tj = 150 °C;
-
300
-
V/µs
voltage
exponential waveform; gate open
circuit; see Figure 12
tgt
tq
gate-controlled turn-on ITM = 40 A; VD = VDRM(max)
;
-
-
2
-
-
µs
µs
time
IG = 100 mA; dIG/dt = 5 A/µs
VDM = 0.67 × VDRM(max); Tj = 150 °C;
TM = 20 A; VR = 25 V;
(dIT/dt)M = 30 A/µs; dVD/dt = 50 V/µs;
GK = 100 Ω
commutated turn-off
time
70
I
R
BT151-1000RT_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 6 August 2007
6 of 12
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
003aab823
003aab824
1.6
3
I
V
GT
GT
I
V
GT(25°C)
GT(25°C)
1.2
0.8
0.4
2
1
0
−50
−50
0
50
100
150
0
50
100
150
T (°C)
j
T (°C)
j
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
Fig 8. Normalized gate trigger current as a function of
junction temperature
003aab825
001aaa959
3
30
I
L
I
T
I
L(25°C)
(A)
2
20
(1)
(2) (3)
1
10
0
−50
0
0
50
100
150
0
0.5
1
1.5
2
T (°C)
j
V
(V)
T
Vo = 1.06 V
Rs = 0.0304 Ω
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 9. On-state current as a function of on-state
voltage
Fig 10. Normalized latching current as a function of
junction temperature
BT151-1000RT_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 6 August 2007
7 of 12
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
003aab826
003aab827
4
3
10
I
H
dV /dt
D
I
H(25°C)
(V/µs)
3
2
10
2
1
10
0
−50
10
0
50
100
150
0
50
100
150
T (°C)
j
T (°C)
j
Gate open circuit
Fig 11. Normalized holding current as a function of
junction temperature
Fig 12. Critical rate of rise of off-state voltage as a
function of junction temperature; typical values
BT151-1000RT_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 6 August 2007
8 of 12
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
base
D
1
D
L
L
2
1
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
b
L
max.
2
e
A
b
D
E
L
D
L
1
A
c
UNIT
p
q
Q
1
1
1
4.7
4.1
1.40
1.25
0.9
0.6
1.45
1.00
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0
12.8
3.30
2.79
3.8
3.5
3.0
2.7
2.6
2.2
mm
3.0
2.54
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
05-03-22
05-10-25
SOT78
3-lead TO-220AB
SC-46
Fig 13. Package outline SOT78 (3-lead TO-220AB)
BT151-1000RT_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 6 August 2007
9 of 12
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
8. Revision history
Table 6.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BT151-1000RT_1
20070806
Product data sheet
-
-
BT151-1000RT_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 6 August 2007
10 of 12
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
9.4
Trademarks
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BT151-1000RT_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 6 August 2007
11 of 12
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
9.1
9.2
9.3
9.4
10
11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 6 August 2007
Document identifier: BT151-1000RT_1
相关型号：
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