BT168DW [NXP]
Thyristors logic level for RCD/ GFI/ LCCB applications; 对于RCD / GFI / LCCB应用晶闸管逻辑电平
| 型号： | BT168DW |
| 厂家： | 
NXP |
| 描述： | Thyristors logic level for RCD/ GFI/ LCCB applications |
| 文件： | 总7页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Thyristors
BT168W series
logic level for RCD/ GFI/ LCCB applications
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated, sensitive gate
SYMBOL PARAMETER
MAX. MAX. MAX. MAX. UNIT
thyristors in
a
plastic envelope
suitable for surface mounting,
intended for use in Residual Current
Devices/ Ground Fault Interrupters/
Leakage Current Circuit Breakers
BT168
Repetitive peak
off-state voltages
Average on-state
current
BW
DW
EW
GW
VDRM
VRRM
IT(AV)
,
200
400
500
600
V
A
0.6
0.6
0.6
0.6
(RCD/ GFI/ LCCB)
applications
where a minimum IGT limit is needed.
These devices may be interfaced
directly to microcontrollers, logic
integrated circuits and other low
power gate trigger circuits.
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak
on-state current
1
8
1
8
1
8
1
8
A
A
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
cathode
4
a
k
2
anode
gate
3
g
2
3
1
tab anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
B
D
E
G
VDRM, VRRM Repetitive peak off-state
voltages
-
-
2001
4001
5001
6001
IT(AV)
Average on-state current half sine wave;
sp ≤ 112 ˚C
RMS on-state current
Non-repetitive peak
on-state current
0.63
A
T
IT(RMS)
ITSM
all conduction angles
t = 10 ms
-
-
-
1
8
9
A
A
A
t = 8.3 ms
half sine wave;
Tj = 25 ˚C prior to surge
t = 10 ms
I2t
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
0.32
50
A2s
dIT/dt
ITM = 2 A; IG = 10 mA;
dIG/dt = 100 mA/µs
A/µs
IGM
-
1
5
A
V
V
W
W
˚C
˚C
VGM
VRGM
PGM
PG(AV)
Tstg
-
-
5
-
-
2
over any 20 ms period
0.1
150
125
-40
-
Tj
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.100
Philips Semiconductors
Product specification
Thyristors
BT168W series
logic level for RCD/ GFI/ LCCB Applications
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-sp
Thermal resistance
-
-
15
K/W
junction to solder point
Thermal resistance
junction to ambient
Rth j-a
pcb mounted, minimum footprint
pcb mounted, pad area as in fig:14
-
-
156
70
-
-
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IGT
IL
Gate trigger current
Latching current
Holding current
VD = 12 V; IT = 10 mA; gate open circuit
VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ
VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ
IT = 2 A
VD = 12 V; IT = 10 mA; gate open circuit
VD = VDRM(max); IT = 10 mA; Tj = 125 ˚C;
gate open circuit
20
50
2
200
6
µA
mA
mA
V
-
IH
-
-
-
2
5
VT
VGT
On-state voltage
Gate trigger voltage
1.35
0.5
0.3
1.5
0.8
-
V
0.2
V
ID, IR
Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C;
-
0.05
0.1
mA
RGK = 1 kΩ
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dVD/dt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; RGK = 1 kΩ
ITM = 2 A; VD = VDRM(max); IG = 10 mA;
dIG/dt = 0.1 A/µs
-
-
-
25
2
-
-
-
V/µs
µs
tgt
tq
VD = 67% VDRM(max); Tj = 125 ˚C;
100
µs
I
TM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ
September 1997
2
Rev 1.100
Philips Semiconductors
Product specification
Thyristors
BT168W series
logic level for RCD/ GFI/ LCCB Applications
ITSM / A
Tsp(max) / C
a = 1.57
Ptot / W
10
8
110
1
0.8
0.6
0.4
0.2
0
conduction form
I
angle
factor
a
4
2.8
2.2
1.9
1.57
TSM
I
T
degrees
30
60
90
120
180
1.9
113
116
119
time
Tj initial = 25 C max
T
2.2
2.8
6
4
4
122
125
2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1
10
100
1000
IF(AV) / A
Number of half cycles at 50Hz
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where a = form
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
factor = IT(RMS)/ IT(AV)
.
IT(RMS) / A
ITSM / A
1000
100
10
2
1.5
1
I
TSM
time
I
T
0.5
0
T
Tj initial = 25 C max
1
10ms
10us
100us
1ms
0.01
0.1
1
10
T / s
surge duration / s
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tsp ≤ 112˚C.
VGT(Tj)
IT(RMS) / A
1.2
1
VGT(25 C)
1.6
1.4
1.2
1
112 C
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
-50
0
50
Tsp / C
100
150
-50
0
50
100
150
Tj / C
Fig.3. Maximum permissible rms current IT(RMS)
versus solder point temperature Tsp.
,
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 1997
3
Rev 1.100
Philips Semiconductors
Product specification
Thyristors
BT168W series
logic level for RCD/ GFI/ LCCB Applications
IGT(Tj)
IGT(25 C)
IT / A
5
4
3
2
1
0
Tj = 125 C
Tj = 25 C
3
2.5
2
Vo = 1.0 V
Rs = 0.27 Ohms
1.5
1
typ
max
0.5
0
0
0.5
1
1.5
2
2.5
-50
0
50
100
150
Tj / C
VT / V
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
Zth j-sp (K/W)
100
10
3
2.5
2
1
1.5
1
t
P
D
p
0.1
0.01
t
0.5
0
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
Fig.11. Transient thermal impedance Zth j-sp, versus
pulse width tp.
versus junction temperature Tj, RGK = 1 kΩ.
dVD/dt (V/us)
1000
IH(Tj)
IH(25 C)
3
2.5
2
100
RGK = 1 kohms
1.5
1
10
0.5
0
1
0
50
100
150
-50
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
versus junction temperature Tj, RGK = 1 kΩ.
September 1997
4
Rev 1.100
Philips Semiconductors
Product specification
Thyristors
BT168W series
logic level for RCD/ GFI/ LCCB Applications
MOUNTING INSTRUCTIONS
Dimensions in mm.
3.8
min
1.5
min
2.3
6.3
1.5
min
(3x)
1.5
min
4.6
Fig.13. soldering pattern for surface mounting SOT223.
PRINTED CIRCUIT BOARD
Dimensions in mm.
36
18
60
4.5
4.6
9
10
7
15
50
Fig.14. PCB for thermal resistance and power rating for SOT223.
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick).
September 1997
5
Rev 1.100
Philips Semiconductors
Product specification
Thyristors
BT168W series
logic level for RCD/ GFI/ LCCB Applications
MECHANICAL DATA
Dimensions in mm
6.7
6.3
Net Mass: 0.11 g
B
3.1
2.9
0.32
0.24
0.2
M
A
A
4
0.10
0.02
7.3
6.7
3.7
3.3
16
max
13
2
3
1
10
max
1.05
0.85
0.80
0.60
2.3
1.8
max
M
0.1
(4x)
B
4.6
Fig.15. SOT223 surface mounting package.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to surface mounting instructions for SOT223 envelope.
3. Epoxy meets UL94 V0 at 1/8".
September 1997
6
Rev 1.100
Philips Semiconductors
Product specification
Thyristors
BT168W series
logic level for RCD/ GFI/ LCCB Applications
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
7
Rev 1.100
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