BT169D/01,162 [NXP]
SILICON CONTROLLED RECTIFIER,400V V(DRM),500MA I(T),TO-92VAR;
| 型号： | BT169D/01,162 |
| 厂家： | 
NXP |
| 描述： | SILICON CONTROLLED RECTIFIER,400V V(DRM),500MA I(T),TO-92VAR |
| 文件： | 总13页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BT169 series
2
9
-
TO
Thyristors logic level
Rev. 5 — 30 September 2011
Product data sheet
1. Product profile
1.1 General description
Passivated, sensitive gate thyristors in a SOT54 plastic package.
1.2 Features and benefits
Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.
1.3 Applications
General purpose switching and phase control applications.
1.4 Quick reference data
VDRM, VRRM 200 V (BT169B)
VDRM, VRRM 400 V (BT169D)
VDRM, VRRM 600 V (BT169G)
IT(RMS) 0.8 A
IT(AV) 0.5 A
ITSM 8 A
2. Pinning information
Table 1.
Discrete pinning
Pin
1
Description
anode (a)
gate (g)
Simplified outline
Symbol
A
K
2
G
3
cathode (k)
sym037
3 2 1
SOT54 (TO-92)
BT169 series
NXP Semiconductors
Thyristor logic level
3. Ordering information
Table 2.
Ordering information
Type number
Package
Name
-
Description
Version
BT169B
BT169D
BT169G
plastic single-ended leaded (through hole) package; 3 leads
SOT54
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDRM, VRRM
repetitive peak off-state voltages
BT169B
[1]
[1]
[1]
-
-
-
-
200
400
600
0.5
V
V
V
A
BT169D
BT169G
IT(AV)
average on-state current
half sine wave;
Tlead 83 C;
see Figure 1
IT(RMS)
ITSM
RMS on-state current
all conduction angles;
see Figure 4 and 5
-
0.8
A
non-repetitive peak on-state current half sine wave;
Tj = 25 C prior to
surge;
see Figure 2 and 3
t = 10 ms
t = 8.3 ms
-
-
-
-
8
A
9
A
A2s
I2t
I2t for fusing
t = 10 ms
0.32
50
dIT/dt
repetitive rate of rise of on-state
current after triggering
ITM = 2 A; IG = 10 mA;
A/s
dIG/dt = 100 mA/s
IGM
peak gate current
-
1
A
VGM
VRGM
PGM
PG(AV)
Tstg
peak gate voltage
-
5
V
peak reverse gate voltage
peak gate power
-
5
V
-
2
W
W
C
C
average gate power
storage temperature
junction temperature
over any 20 ms period
-
0.1
+150
125
40
Tj
-
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/s.
BT169_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 30 September 2011
2 of 13
BT169 series
NXP Semiconductors
Thyristor logic level
001aab446
0.8
77
a =
T
1.57
P
tot
lead(max)
(°C)
(W)
1.9
0.6
89
2.2
2.8
0.4
0.2
0
101
4
conduction form
angle
(degrees)
factor
a
30
60
90
120
180
4
113
125
2.8
2.2
1.9
1.57
α
0
0.1
0.2
0.3
0.4
0.5
0.6
I
(A)
T(AV)
a = form factor = IT(RMS)/IT(AV)
.
Fig 1. Total power dissipation as a function of average on-state current; maximum values.
001aab499
10
I
TSM
(A)
8
6
4
2
0
I
I
T
TSM
t
t
p
T
= 25 °C max
j(init)
2
3
1
10
10
10
number of cycles
f = 50 Hz.
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values.
BT169_SER
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 30 September 2011
3 of 13
BT169 series
NXP Semiconductors
Thyristor logic level
001aab497
3
10
I
I
T
TSM
I
TSM
(A)
2
t
= 25 °C max
10
t
p
T
j(init)
10
1
10
−5
−4
−3
−2
10
10
10
t
(s)
p
tp 10 ms.
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum
values.
001aab450
001aab449
1
2
I
T(RMS)
(A)
I
T(RMS)
(A)
(1)
0.8
0.6
0.4
0.2
0
1.5
1
0.5
0
10
−2
−1
−50
0
50
100
150
(°C)
10
1
10
T
surge duration (s)
lead
f = 50 Hz; Tlead 83 C.
(1) Tlead = 83 C.
Fig 4. RMS on-state current as a function of surge
duration for sinusoidal currents.
Fig 5. RMS on-state current as a function of lead
temperature; maximum values.
BT169_SER
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 30 September 2011
4 of 13
BT169 series
NXP Semiconductors
Thyristor logic level
5. Thermal characteristics
Table 4.
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-lead) thermal resistance from junction to
lead
-
-
60
K/W
Rth(j-a)
thermal resistance from junction to printed-circuit board mounted;
-
150
-
K/W
ambient
lead length = 4 mm
001aab451
2
10
Z
th(j-lead)
(K/W)
10
1
t
p
P
δ =
T
−1
10
t
t
p
T
−2
10
10
−5
−4
−3
−2
−1
10
10
10
10
1
10
t
(s)
p
Fig 6. Transient thermal impedance as a function of pulse width.
BT169_SER
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 30 September 2011
5 of 13
BT169 series
NXP Semiconductors
Thyristor logic level
6. Characteristics
Table 5.
Characteristics
Tj = 25 C unless otherwise stated.
Symbol Parameter
Static characteristics
IGT gate trigger current
Conditions
Min
Typ
Max
Unit
VD = 12 V; IT = 10 mA;
gate open circuit; see Figure 8
-
-
-
-
50
2
200
6
A
mA
mA
V
IL
latching current
holding current
VD = 12 V; IGT = 0.5 mA;
RGK = 1 k; see Figure 10
IH
VD = 12 V; IGT = 0.5 mA;
2
5
RGK = 1 k; see Figure 11
VT
on-state voltage
IT = 1.2 A
1.25
1.7
VGT
gate trigger voltage
IT = 10 mA; gate open circuit;
see Figure 7
VD = 12 V
-
0.5
0.8
-
V
VD = VDRM(max); Tj = 125 C
0.2
-
0.3
V
ID, IR
off-state leakage
current
VD = VDRM(max); VR = VRRM(max)
;
0.05
0.1
mA
Tj = 125 C; RGK = 1 k
Dynamic characteristics
dVD/dt
critical rate of rise of
off-state voltage
VDM = 67 % VDRM(max); Tj = 125 C;
exponential waveform;
see Figure 12
RGK = 1 k
500
800
25
2
-
-
-
V/s
V/s
s
gate open circuit
-
-
tgt
tq
gate controlled
turn-on time
ITM = 2 A; VD = VDRM(max);
IG = 10 mA; dIG/dt = 0.1 A/s
circuit commuted
turn-off time
VD = 67 % VDRM(max); Tj = 125 C;
ITM = 1.6 A; VR = 35 V;
-
100
-
s
dITM/dt = 30 A/s; dVD/dt = 2 V/s;
RGK = 1 k
BT169_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 30 September 2011
6 of 13
BT169 series
NXP Semiconductors
Thyristor logic level
001aab501
001aab502
1.6
3
V
I
GT
GT
V
I
GT(25°C)
GT(25°C)
1.2
2
0.8
1
0.4
−50
0
−50
0
50
100
150
0
50
100
150
T (°C)
j
T (°C)
j
Fig 7. Normalized gate trigger voltage as a function of
junction temperature.
Fig 8. Normalized gate trigger current as a function
junction temperature.
001aab503
001aab454
3
5
I
T
I
(A)
L
I
4
3
2
1
0
L(25°C)
2
1
0
(1)
(2) (3)
−50
0
50
100
150
0.4
1.2
2
2.8
T (°C)
j
V
(V)
T
VO = 1.067 V.
RGK = 1 k.
RS = 0.187 .
(1) Tj = 125 C; typical values.
(2) Tj = 125 C; maximum values.
(3) Tj = 25 C; maximum values.
Fig 9. On-state current characteristics.
Fig 10. Normalized latching current as a function of
junction temperature.
BT169_SER
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 30 September 2011
7 of 13
BT169 series
NXP Semiconductors
Thyristor logic level
001aab504
001aab507
4
3
10
dV /dt
D
I
H
(V/μs)
I
H(25°C)
(1)
3
2
10
2
1
10
(2)
0
−50
10
0
50
100
150
0
50
100
150
T (°C)
j
T (°C)
j
RGK = 1 k.
(1) RGK = 1 k.
(2) Gate open circuit.
Fig 11. Normalized holding current as a function of
junction temperature.
Fig 12. Critical rate of rise of off-state voltage as a
function of junction temperature; typical
values.
7. Package information
Epoxy meets requirements of UL94 V-0 at 1⁄8 inch.
BT169_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 30 September 2011
8 of 13
BT169 series
NXP Semiconductors
Thyristor logic level
8. Package outline
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
1
UNIT
A
b
b
c
D
d
E
e
e
L
1
1
max.
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
mm
2.54
1.27
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
04-06-28
04-11-16
SOT54
TO-92
SC-43A
Fig 13. Package outline SOT54 (TO-92).
BT169_SER
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 30 September 2011
9 of 13
BT169 series
NXP Semiconductors
Thyristor logic level
9. Revision history
Table 6.
Document ID
BT169_SERIES v.5 20110930
Modifications:
Revision history
Release date Data sheet status
Product data sheet
Change notice Order number
Supersedes
-
9397 750 13512 BT169_SERIES v.4
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
BT169_SERIES v.4 20040823
Product data sheet
-
9397 750 13512 BT169_SERIES v.3
Modifications:
• The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
• Section 1.4 “Quick reference data”: BT169E obsolete, removed from list.
• Table 2 “Ordering information”: BT169E obsolete, removed from table.
• Table 3 “Limiting values”: BT169E obsolete, removed from table.
BT169_SERIES v.3 20010902
BT169_SERIES v.2 20010901
BT169_SERIES v.1 19970901
Product specification
Product specification
Product specification
-
-
-
not applicable
not applicable
not applicable
BT169_SERIES v.2
BT169_SERIES v.1
-
BT169_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 30 September 2011
10 of 13
BT169 series
NXP Semiconductors
Thyristor logic level
10. Legal information
10.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
10.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
10.3 Disclaimers
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
BT169_SER
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 30 September 2011
11 of 13
BT169 series
NXP Semiconductors
Thyristor logic level
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
11. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BT169_SER
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 30 September 2011
12 of 13
BT169 series
NXP Semiconductors
Thyristor logic level
12. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
7
8
9
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package information . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
10.1
10.2
10.3
10.4
11
12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 30 September 2011
Document identifier: BT169_SER
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