BT236X-600G [NXP]
6 A Four-quadrant triacs; 6四象限三端双向可控硅
| 型号： | BT236X-600G |
| 厂家： | 
NXP |
| 描述： | 6 A Four-quadrant triacs |
| 文件： | 总12页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BT236X series F and G
6 A Four-quadrant triacs
Rev. 02 — 14 March 2006
Product data sheet
1. Product profile
1.1 General description
Passivated triacs in a full pack, plastic package intended for use in applications requiring
high bidirectional transient and blocking voltage capability and thermal cycling
performance.
1.2 Features
■ Isolated package
■ High ITSM
1.3 Applications
■ Lamp dimmers
■ Motor speed controllers
■ High inrush resistive loads
■ Heating and static switching
1.4 Quick reference data
■ VDRM ≤ 600 V
■ IGT ≤ 35 mA (BT236X-600_800)
(BT236X-600_600F_600G)
■ VDRM ≤ 800 V (BT236X-800_800G)
■ ITSM ≤ 65 A (t = 20 ms)
■ IT(RMS) ≤ 6 A
■ IGT ≤ 25 mA (BT236X-600F)
■ IGT ≤ 50 mA (BT236X-600G_800G)
2. Pinning information
Table 1:
Pinning
Pin
1
Description
Simplified outline
Symbol
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mb
T2
T1
G
2
3
sym051
mb
mounting base; isolated
1
2 3
SOT186A (3-lead TO-220F)
BT236X series F and G
Philips Semiconductors
6 A Four-quadrant triacs
3. Ordering information
Table 2:
Ordering information
Type number
Package
Name
Description
Version
BT236X-600
BT236X-600F
BT236X-600G
BT236X-800
BT236X-800G
3-lead
TO-220F
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A
3 lead TO-220 ‘full pack’
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state voltage
BT236X-600
[1]
[1]
[1]
-
-
-
-
-
-
600
600
600
800
800
6
V
V
V
V
V
A
BT236X-600F
BT236X-600G
BT236X-800
BT236X-800G
IT(RMS)
ITSM
RMS on-state current
full sine wave; Th ≤ 88 °C; see
Figure 4 and 5
non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to
surge; see Figure 2 and 3
t = 20 ms
-
-
-
65
71
21
A
t = 16.7 ms
A
A2s
I2t
I2t for fusing
t = 10 ms
dIT/dt
rate of rise of on-state current
ITM = 12 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
T2+ G−
T2− G−
T2− G+
-
50
50
50
10
2
A/µs
A/µs
A/µs
A/µs
A
-
-
-
IGM
peak gate current
peak gate voltage
peak gate power
-
VGM
PGM
PG(AV)
Tstg
Tj
-
5
V
-
5
W
average gate power
storage temperature
junction temperature
over any 20 ms period
-
0.5
+150
125
W
−40
°C
-
°C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/µs.
BT236X_SER_F_G_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 14 March 2006
2 of 12
BT236X series F and G
Philips Semiconductors
6 A Four-quadrant triacs
003aab307
80
10
Ptot
Th (max)
(W)
(°C)
α
α = 180°
89
98
120°
90°
α
60°
5
30°
107
116
125
0
0
2
4
6
IT(RMS) (A)
α = conduction angle
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
003aaa968
80
I
I
I
TSM
(A)
TSM
T
t
60
t
p
T = 25 °C max
j
40
20
0
2
3
1
10
10
10
n
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT236X_SER_F_G_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 14 March 2006
3 of 12
BT236X series F and G
Philips Semiconductors
6 A Four-quadrant triacs
003aab308
103
I
I
TSM
t
T
ITSM
(A)
T
(1)
T
= 25 °C max
j(init)
102
(2)
10
10-5
10-4
10-3
10-2
10-1
tp ( s)
tp ≤ 20 ms
(1) dIT/dt limit
(2) T2− G+ quadrant
Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values
003aab309
003aab310
25
20
15
10
5
8
6
4
2
0
IT(RMS)
(A)
IT(RMS)
(A)
88 °C
0
10-2
10-1
1
10
-50
0
50
100
150
Th (°C)
surge duration (s)
f = 50 Hz; Th ≤ 88 °C
Fig 4. RMS on-state current as a function of surge
duration; maximum values
Fig 5. RMS on-state current as a function of heatsink
temperature; maximum values
BT236X_SER_F_G_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 14 March 2006
4 of 12
BT236X series F and G
Philips Semiconductors
6 A Four-quadrant triacs
5. Thermal characteristics
Table 4:
Symbol
Rth(j-h)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
4.5
6.5
-
Unit
K/W
K/W
K/W
[1]
[2]
thermal resistance from junction to see Figure 6
heatsink
-
-
-
-
see Figure 6
-
Rth(j-a)
thermal resistance from junction to in free air
ambient
55
[1] Full or half cycle with heatsink compound
[2] Full or half cycle without heatsink compound
003aab331
10
(1)
(2)
Z
th(j-h)
(K/W)
1
(3)
(4)
−1
10
10
P
t
t
p
−2
−5
−4
−3
−2
−1
10
10
10
10
10
1
10
t
(s)
p
(1) Unidirectional without heatsink compound
(2) Unidirectional with heatsink compound
(3) Bidirectional without heatsink compound
(4) Bidirectional with heatsink compound
Fig 6. Transient thermal impedance from junction to heatsink as a function of pulse duration
6. Isolation characteristics
Table 5:
Isolation limiting values and characteristics
Th = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Visol(rms)
RMS isolation voltage from all three terminals to
external heatsink; f = 50 Hz to
-
-
2500
V
60 Hz; sinusoidal waveform;
RH ≤ 65 %; clean and dust free
Cisol
isolation capacitance from pin 2 to external heatsink;
f = 1 MHz
-
10
-
pF
BT236X_SER_F_G_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 14 March 2006
5 of 12
BT236X series F and G
Philips Semiconductors
6 A Four-quadrant triacs
7. Static characteristics
Table 6:
Static characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
BT236X-600
BT236X-800
BT236X-600F
Min Typ Max
BT236X-600G
BT236X-800G
Unit
Min
Typ
Max
Min
Typ
Max
IGT
gate trigger
current
VD = 12 V;
IT = 0.1 A;
see Figure 8
T2+ G+
T2+ G−
T2− G−
T2− G+
-
-
-
-
5
8
35
35
35
70
-
-
-
-
5
8
25
25
25
70
-
-
-
-
5
8
50
mA
mA
mA
mA
50
11
30
11
30
11
30
50
100
IL
latching current VD = 12 V;
GT = 0.1 A;
I
see Figure 10
T2+ G+
T2+ G−
-
-
-
-
-
7
30
45
30
45
20
-
-
-
7
30
45
30
45
20
-
-
-
-
-
7
45
60
45
60
40
mA
mA
mA
mA
mA
16
5
16
5
16
5
T2− G−
T2− G+
7
7
7
IH
holding current VD = 12 V;
5
-
5
5
IGT = 0.1 A;
see Figure 11
VT
on-state voltage IT = 10 A;
-
-
1.3
0.7
1.65
1.5
-
-
1.3
0.7
1.65
1.5
-
-
1.3
0.7
1.65
1.5
V
V
see Figure 9
VGT
gate trigger
voltage
VD = 12 V;
IT = 0.1 A;
see Figure 7
VD = 400 V;
IT = 0.1 A;
Tj = 125 °C
0.25 0.4
-
0.25 0.4
-
0.25 0.4
-
V
ID
off-state current VD = VDRM(max);
-
0.1
0.5
-
0.1
0.5
-
0.1
0.5
mA
Tj = 125 °C
BT236X_SER_F_G_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 14 March 2006
6 of 12
BT236X series F and G
Philips Semiconductors
6 A Four-quadrant triacs
8. Dynamic characteristics
Table 7:
Dynamic characteristics
Conditions
Symbol Parameter
BT236X-600
BT236X-800
BT236X-600F
BT236X-600G
BT236X-800G
Unit
Min
100
Typ Max Min
Typ Max Min
Typ Max
dVD/dt
rate of rise of
off-state
V
DM = 0.67VDRM(max)
;
250
-
50
250
-
200
250
-
V/µs
Tj = 125 °C;
voltage
exponentialwaveform;
gate open circuit
dVcom/dt rate of
change of
V
DM = 400 V;
Tj = 95 °C;
IT(RMS) = 6 A;
-
-
20
-
-
20
-
10
20
-
V/µs
commutating
voltage
dIcom/dt = 3.6 A/ms;
gate open circuit; see
Figure 12
tgt
gate-
ITM = 12 A;
2
-
-
2
-
-
2
-
µs
controlled
VD = VDRM(max)
;
turn-on time IG = 0.1 A;
dIG/dt = 5 A/µs
001aab101
001aae042
1.6
3
V
I
GT
GT
V
I
GT(25°C)
GT(25°C)
1.2
2
(1)
(2)
(3)
(4)
0.8
1
0
(3)
(4)
(2)
(1)
0.4
−50
0
50
100
150
−50
0
50
100
150
T (°C)
j
T (°C)
j
(1) T2− G−
(2) T2+G−
(3) T2+ G+
(4) T2−G+
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
Fig 8. Normalized gate trigger current as a function of
junction temperature
BT236X_SER_F_G_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 14 March 2006
7 of 12
BT236X series F and G
Philips Semiconductors
6 A Four-quadrant triacs
001aab100
003aab311
3
25
IT
I
(A)
L
20
15
10
5
I
L(25°C)
2
1
(1)
(2)
(3)
0
−50
0
0
50
100
150
0
1
2
3
VT (V)
T (°C)
j
Vo = 1.26 V
Rs = 0.0378 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 9. On-state current as a function of on-state
voltage
Fig 10. Normalized latching current as a function of
junction temperature
001aab099
001aae043
3
3
10
dV/dt
I
H
(V/µs)
I
H(25°C)
(1)
2
(2)
(3)
2
10
1
10
dl /dt
com
(A/ms) = 10 7.9 6.1 4.7 3.6 2.8
0
−50
1
0
50
100
150
0
50 100
150
T (°C)
j
T (°C)
j
The triac should commutate when the dV/dt is below
the value on the appropriate curve for
pre-commutation dIT/dt.
(1) Off-state dV/dt limit for BT236X-600G_800G
(2) Off-state dV/dt limit for BT236X-600_800
(3) Off-state dV/dt limit for BT236X-600F
Fig 11. Normalized holding current as a function of
junction temperature
Fig 12. Typical commutation dV/dt as a function of
junction temperature
BT236X_SER_F_G_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 14 March 2006
8 of 12
BT236X series F and G
Philips Semiconductors
6 A Four-quadrant triacs
9. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 'full pack'
SOT186A
E
P
A
A
1
q
D
1
mounting
base
T
D
j
L
L
2
1
K
Q
b
b
1
L
2
1
2
3
b
c
w
M
e
e
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(2)
L
A
A
b
c
D
D
1
E
e
e
1
j
K
L
L
P
Q
q
T
w
b
b
UNIT
mm
2
1
1
1
2
max.
1.1
0.9
1.4
1.0
2.7
1.7
0.6 14.4 3.30
0.4 13.5 2.79
2.6
2.3
4.6 2.9
4.0 2.5
0.9
0.7
3.0
2.6
0.7 15.8 6.5 10.3
0.4 15.2 6.3 9.7
3.2
3.0
3
5.08
2.54
2.5
0.4
Notes
1. Terminal dimensions within this zone are uncontrolled.
2. Both recesses are 2.5 × 0.8 max. depth
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
02-04-09
06-02-14
SOT186A
3-lead TO-220F
Fig 13. Package outline SOT186A (3-lead TO-220F)
BT236X_SER_F_G_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 14 March 2006
9 of 12
BT236X series F and G
Philips Semiconductors
6 A Four-quadrant triacs
10. Revision history
Table 8:
Document ID
BT236X_SER_F_G_2 20060314
Revision history
Release date Data sheet status
Product data sheet
Change notice Doc. number
Supersedes
-
-
-
Modifications:
• In Figure 7, Figure 8, Figure 10 and Figure 11: spaces have been removed between 25 and
degree signs.
• In Figure 5: the figure note has been deleted.
• Figure 8: has been modified.
• In Table 3: corrected the symbol dIT/dt.
• The entry in IMPULSE has been modified by PD Coding (updated to SOT186A for all types).
BT236X_SER_F_G_1 20060209
Product data sheet
-
-
-
BT236X_SER_F_G_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 14 March 2006
10 of 12
BT236X series F and G
Philips Semiconductors
6 A Four-quadrant triacs
11. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
12. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Trademarks
Notice — All referenced brands, product names, service names and
13. Disclaimers
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
15. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
BT236X_SER_F_G_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 14 March 2006
11 of 12
BT236X series F and G
Philips Semiconductors
6 A Four-quadrant triacs
16. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Isolation characteristics . . . . . . . . . . . . . . . . . . 5
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
8
9
10
11
12
13
14
15
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 14 March 2006
Document number: BT236X_SER_F_G_2
Published in The Netherlands
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