BT258U [NXP]
Thyristors logic level; 晶闸管逻辑电平
NXP 
Philips Semiconductors
Product specification
Thyristors
logic level
BT258U series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated, sensitive gate thyristors
in a plastic envelope, intended for use
in general purpose switching and
phase control applications. These
devices are intended to be interfaced
directly to microcontrollers, logic
integrated circuits and other low
power gate trigger circuits.
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
BT258U- 500R 600R 800R
VDRM
VRRM
IT(AV)
,
Repetitive peak off-state
500
600
800
V
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
5
8
75
5
8
75
5
8
75
A
A
A
IT(RMS)
ITSM
PINNING - SOT533
PIN CONFIGURATION
SYMBOL
PIN
NUMBER
DESCRIPTION
a
k
1
2
cathode
anode
gate
3
g
1
2
3
Top view
MBK915
tab
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500R -600R -800R
VDRM, VRRM Repetitive peak off-state
voltages
-
5001
6001
800
V
IT(AV)
IT(RMS)
ITSM
Average on-state current half sine wave; Tmb ≤ 111 ˚C
-
-
5
8
A
A
RMS on-state current
Non-repetitive peak
on-state current
all conduction angles
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
-
-
-
-
75
82
28
50
A
A
t = 8.3 ms
t = 10 ms
ITM = 10 A; IG = 50 mA;
dIG/dt = 50 mA/µs
I2t
dIT/dt
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
A2s
A/µs
IGM
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
2
5
A
V
V
W
W
˚C
˚C
VGM
VRGM
PGM
PG(AV)
Tstg
-
-
5
-
-
5
over any 20 ms period
0.5
150
1252
-40
-
Tj
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
March 1999
1
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
logic level
BT258U series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Thermal resistance
junction to mounting base
Thermal resistance
junction to ambient
-
-
2.0
K/W
Rth j-a
in free air
-
70
-
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IGT
IL
Gate trigger current
Latching current
Holding current
VD = 12 V; IT = 0.1 A
VD = 12 V; IGT = 0.1 A
VD = 12 V; IGT = 0.1 A
IT = 16 A
-
50
0.4
0.3
1.3
0.4
0.2
0.1
200
10
6
µA
mA
mA
V
-
IH
-
-
-
VT
VGT
On-state voltage
Gate trigger voltage
1.5
1.5
-
VD = 12 V; IT = 0.1 A
VD = VDRM(max); IT = 0.1 A; Tj = 110 ˚C
V
0.1
-
V
mA
ID, IR
Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C
0.5
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dVD/dt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; RGK = 100 Ω
ITM = 10 A; VD = VDRM(max); IG = 5 mA;
dIG/dt = 0.2 A/µs
VD = 67% VDRM(max); Tj = 125 ˚C;
ITM = 12 A; VR = 24 V; dITM/dt = 10 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ
50
100
-
-
-
V/µs
tgt
tq
-
2
µs
-
100
µs
March 1999
2
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
logic level
BT258U series
ITSM / A
Ptot / W
8
Tmb(max) / C
a = 1.57
80
70
60
50
40
30
20
10
0
109
111
113
115
117
119
121
conduction form
angle
factor
a
4
2.8
2.2
1.9
1.57
I
TSM
7
6
5
4
3
2
1
0
I
degrees
T
1.9
30
60
90
120
180
time
Tj initial = 25 C max
T
2.2
2.8
4
123
125
0
1
2
3
4
5
6
1
10
100
1000
IT(AV) / A
Number of half cycles at 50Hz
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
a = form factor = IT(RMS)/ IT(AV)
.
ITSM / A
IT(RMS) / A
1000
100
10
24
20
16
12
8
dI T/dt limit
I
TSM
time
I
T
T
4
Tj initial = 25 C max
0
10ms
10us
100us
1ms
0.01
0.1
surge duration / s
1
10
T / s
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 111˚C.
IT(RMS) / A
VGT(Tj)
9
8
7
6
5
4
3
2
1
0
VGT(25 C)
1.6
1.4
1.2
1
111 C
0.8
0.6
0.4
-50
0
50
Tmb / C
100
150
-50
0
50
100
150
Tj / C
Fig.3. Maximum permissible rms current IT(RMS)
versus mounting base temperature Tmb.
,
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
March 1999
3
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
logic level
BT258U series
IGT(Tj)
IGT(25 C)
IT / A
30
25
20
15
10
5
Tj = 125 C
Tj = 25 C
3
2.5
2
Vo = 0.99 V
Rs = 0.0325 ohms
typ
max
1.5
1
0.5
0
0
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
VT / V
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
Zth j-mb (K/W)
10
1
3
2.5
2
1.5
1
t
P
D
0.1
0.01
p
t
0.5
0
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
IH(Tj)
IH(25 C)
dVD/dt (V/us)
1000
3
2.5
2
RGK = 100 ohms
100
1.5
1
10
0.5
0
1
-50
0
50
Tj / C
100
150
0
50
100
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
March 1999
4
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
logic level
BT258U series
MECHANICAL DATA
Dimensions in mm Net Mass: 1.3 g
Plastic single-ended package (Philips version of I-PAK); 3 leads (in-line)
SOT533
E
A
A
E
1
1
D
1
mounting
base
D
Q
L
1
2
3
e
c
b
w
M
1
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
b
c
D
D
E
E
e
e
1
L
Q
UNIT
A
1
1
1
9.8 1.00
9.4 1.10
2.38 0.89 0.89
2.22 0.71 0.71
7.28 1.06
6.94 0.96
0.56
0.46
6.73 5.36
6.47 5.26
mm
2.285
4.57
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT533
TO-251
99-02-18
Fig.13. SOT533 (TO251). pin 2 connected to mounting base.
March 1999
5
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
logic level
BT258U series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
March 1999
6
Rev 1.000
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