BTA208M-800B [NXP]
Three quadrant triacs high commutation; 三象限三端双向可控硅整流高
| 型号： | BTA208M-800B |
| 厂家： | 
NXP |
| 描述： | Three quadrant triacs high commutation |
| 文件： | 总6页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA208S series B
BTA208M series B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high commutation
triacs in a plastic envelope, suitable
forsurfacemounting, intended foruse
in circuits where high static and
dynamic dV/dt and high dI/dt can
occur. These devices will commutate
the full rated rms current at the
maximum rated junction temperature,
without the aid of a snubber.
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
BTA208S (or BTA208M)- 500B 600B 800B
VDRM
Repetitive peak off-state
500
600
800
V
voltages
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak on-state
current
8
65
8
65
8
65
A
A
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
NUMBER
Standard Alternative
tab
S
M
1
2
MT1
MT2
gate
MT2
gate
MT2
MT1
MT2
T2
T1
3
2
G
1
3
tab
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
-500
-600
-800
800
VDRM
Repetitive peak off-state
voltages
-
-
5001
6001
IT(RMS)
ITSM
RMS on-state current
full sine wave;
8
A
Tmb ≤ 102 ˚C
Non-repetitive peak
on-state current
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
-
-
-
65
71
A
A
t = 16.7 ms
I2t
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
t = 10 ms
21
A2s
A/µs
dIT/dt
ITM = 12 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
100
IGM
-
-
-
-
2
5
5
A
V
W
W
VGM
PGM
PG(AV)
over any 20 ms
period
0.5
Tstg
Tj
Storage temperature
Operating junction
temperature
-40
-
150
125
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
September 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA208S series B
BTA208M series B
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Thermal resistance
full cycle
-
-
-
-
-
75
2.0
2.4
-
K/W
K/W
K/W
junction to mounting base half cycle
Rth j-a
Thermal resistance
junction to ambient
pcb (FR4) mounted; footprint as in Fig.14
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IGT
Gate trigger current2
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
2
2
2
18
21
34
50
50
50
mA
mA
mA
IL
Latching current
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
-
31
34
60
90
mA
mA
mA
mA
V
-
-
30
60
IH
VT
VGT
Holding current
On-state voltage
Gate trigger voltage
VD = 12 V; IGT = 0.1 A
IT = 10 A
-
31
60
-
1.3
0.7
0.4
0.1
1.65
1.5
-
VD = 12 V; IT = 0.1 A
-
0.25
-
V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C
V
ID
Off-state leakage current VD = VDRM(max); Tj = 125 ˚C
0.5
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dVD/dt
dIcom/dt
tgt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; gate open circuit
VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 8 A;
without snubber; gate open circuit
ITM = 12 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
1000 4000
-
-
-
V/µs
A/ms
µs
-
-
14
2
2 Device does not trigger in the T2-, G+ quadrant.
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA208S series B
BTA208M series B
IT(RMS) / A
Tmb(max) / C
= 180
Ptot / W
10
8
12
101
105
109
113
120
90
102 C
10
1
8
6
4
2
0
60
30
6
4
117
2
121
125
0
-50
0
50
Tmb / C
100
150
0
2
4
6
8
10
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.4. Maximum permissible rms current IT(RMS)
versus mounting base temperature Tmb.
,
ITSM / A
IT(RMS) / A
1000
100
10
25
20
15
10
5
dIT/dt limit
I
TSM
time
I
T
T
Tj initial = 25 C max
10ms 100ms
0
10us
100us
1ms
T / s
0.01
0.1
surge duration / s
1
10
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 102˚C.
ITSM / A
VGT(Tj)
VGT(25 C)
70
1.6
1.4
1.2
1
I
TSM
time
I
T
60
50
40
30
20
10
0
T
Tj initial = 25 C max
0.8
0.6
0.4
1
10
100
1000
-50
0
50
Tj / C
100
150
Number of half cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA208S series B
BTA208M series B
IGT(Tj)
IGT(25 C)
IT / A
25
20
15
10
5
Tj = 125 C
Tj = 25 C
3
2.5
2
T2+ G+
T2+ G-
T2- G-
max
typ
Vo = 1.264 V
Rs = 0.0378 Ohms
1.5
1
0.5
0
0
0
0.5
1
1.5
VT / V
2
2.5
3
-50
0
50
Tj / C
100
150
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
Zth j-mb (K/W)
10
1
3
2.5
2
unidirectional
bidirectional
1.5
1
t
P
D
0.1
0.01
p
t
0.5
0
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
IH(Tj)
IH(25C)
dIcom/dt (A/ms)
1000
100
10
3
2.5
2
1.5
1
0.5
0
1
20
40
60
80
100
120
140
-50
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.12. Typical, critical rate of change of commutating
current, dIcom/dt versus junction temperature.
September 1997
4
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA208S series B
BTA208M series B
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.1 g
seating plane
2.38 max
0.93 max
1.1
5.4
6.73 max
tab
4 min
4.6
6.22 max
0.5 min
10.4 max
0.5
2
0.3
0.5
3
1
0.8 max
(x2)
2.285 (x2)
Fig.13. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15
2.5
1.5
4.57
Fig.14. SOT428 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
September 1997
5
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA208S series B
BTA208M series B
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
6
Rev 1.200
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