BTA212XD [NXP]
Three quadrant triacs guaranteed commutation;
| 型号： | BTA212XD |
| 厂家： | 
NXP |
| 描述： | Three quadrant triacs guaranteed commutation |
| 文件： | 总7页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212X series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation
triacs in a full pack, plastic envelope
intended for use in motor control circuits
or with other highly inductive loads.
SYMBOL
PARAMETER
MAX. MAX. UNIT
BTA212X-
BTA212X-
BTA212X-
600D
-
600E 800E
600F 800F
These
devices
balance
the
requirements
of
commutation
VDRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
600
800
V
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low power drivers, including micro
controllers.
IT(RMS)
ITSM
12
95
12
95
A
A
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
main terminal 1
case
T2
T1
2
main terminal 2
gate
3
G
1
2 3
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
-600
6001
-800
800
VDRM
Repetitive peak off-state
voltages
-
-
IT(RMS)
ITSM
RMS on-state current
full sine wave;
12
A
Ths ≤ 56 ˚C
Non-repetitive peak
on-state current
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
-
-
-
95
105
45
A
A
t = 16.7 ms
I2t
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
t = 10 ms
A2s
A/µs
dIT/dt
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
100
IGM
-
-
-
-
2
5
5
A
V
W
W
VGM
PGM
PG(AV)
over any 20 ms
period
0.5
Tstg
Tj
Storage temperature
Operating junction
temperature
-40
-
150
125
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
February 2000
1
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212X series D, E and F
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Cisol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
-
-
2500
V
three terminals to external
heatsink
waveform;
R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-hs
Rth j-a
Thermal resistance
junction to heatsink
full or half cycle
with heatsink compound
without heatsink compound
in free air
-
-
-
-
-
55
4.0
5.5
-
K/W
K/W
K/W
Thermal resistance
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
BTA212X-
MIN. TYP.
...D
MAX.
...E
UNIT
...D
...F
IGT
Gate trigger current2
Latching current
VD = 12 V; IT = 0.1 A
T2+ G+
-
-
-
1.0
2.2
3.3
5
5
5
10
10
10
25
25
25
mA
mA
mA
T2+ G-
T2- G-
IL
VD = 12 V; IGT = 0.1 A
T2+ G+
-
-
-
6
6
9
15
25
25
25
30
30
30
40
40
mA
mA
mA
T2+ G-
T2- G-
IH
Holding current
VD = 12 V; IGT = 0.1 A
-
3.8
15
25
30
mA
...D, E, F
VT
On-state voltage
IT = 17 A
-
-
1.3
0.7
0.4
1.6
1.5
-
V
V
V
VGT
Gate trigger voltage
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A;
Tj = 125 ˚C
0.25
ID
Off-state leakage current VD = VDRM(max)
;
-
0.1
0.5
mA
Tj = 125 ˚C
2 Device does not trigger in the T2-, G+ quadrant.
February 2000
2
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212X series D, E and F
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
BTA212X- ...D
VDM = 67% VDRM(max) 20
Tj = 110 ˚C; exponential
waveform; gate open
circuit
VDM = 400 V; Tj = 110 ˚C; 1.8
IT(RMS) = 12 A;
MIN.
...E
60
TYP. MAX. UNIT
...D
...F
dVD/dt
dIcom/dt
dIcom/dt
Critical rate of rise of
off-state voltage
;
70
30
-
-
-
V/µs
A/ms
A/ms
Critical rate of change of
commutating current
3.5
16
5
3
dVcom/dt = 20V/µs; gate
open circuit
Critical rate of change of
commutating current
VDM = 400 V; Tj = 110 ˚C;
IT(RMS) = 12 A;
5
19
100
dVcom/dt = 0.1V/µs; gate
open circuit
...D, E, F
tgt
Gate controlled turn-on
time
ITM = 12 A; VD = VDRM(max)
;
-
-
-
2
-
µs
IG = 0.1 A; dIG/dt = 5 A/µs
February 2000
3
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212X series D, E and F
Ths(max) / C
Ptot / W
20
56 C
IT(RMS) / A
45
15
10
5
= 180
120
1
65
15
90
60
85
10
5
30
105
125
0
0
-50
0
50
Ths / C
100
150
0
5
10
15
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.4. Maximum permissible rms current IT(RMS)
versus heatsink temperature Ths.
,
ITSM / A
1000
IT(RMS) / A
25
20
15
10
5
dIT/dt limit
100
I
TSM
time
I
T
T
Tj initial = 25 C max
10ms 100ms
10
10us
0
100us
1ms
T / s
0.01
0.1
surge duration / s
1
10
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Ths ≤ 56˚C.
ITSM / A
100
VGT(Tj)
VGT(25 C)
1.6
I
TSM
time
I
T
80
60
40
20
0
1.4
1.2
1
T
Tj initial = 25 C max
0.8
0.6
0.4
1
10
100
1000
-50
0
50
Tj / C
100
150
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
February 2000
4
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212X series D, E and F
IT / A
IGT(Tj)
IGT(25°C)
40
30
20
10
0
Tj = 125 C
Tj = 25 C
typ
3
2.5
2
T2+ G+
T2+ G-
T2- G-
max
Vo = 1.175 V
Rs = 0.0316 Ohms
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
3
-50
0
50
Tj/°C
100
150
VT / V
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
Zth j-hs (K/W)
10
3
with heatsink compound
without heatsink compound
2.5
2
1
unidirectional
bidirectional
0.1
1.5
1
t
P
p
D
0.01
t
0.5
0
0.001
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
Fig.11. Transient thermal impedance Zth j-hs, versus
pulse width tp.
versus junction temperature Tj.
dIcom/dt (A/ms)
IH(Tj)
IH(25C)
100
F TYPE
3
E TYPE
D TYPE
2.5
2
10
1.5
1
0.5
0
1
20
40
60
80
Tj/˚C
100
120
140
-50
0
50
Tj / C
100
150
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
Fig.12. Minimum Typical critical rate of change of
commutating current dIcom/dt versus junction
temperature, dVcom/dt = 20V/µs.
versus junction temperature Tj.
February 2000
5
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212X series D, E and F
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
2.5
6.4
0.8 max. depth
15.8
max
seating
plane
15.8
max.
19
max.
3 max.
not tinned
3
2.5
13.5
min.
1
2
3
M
0.4
1.0 (2x)
0.6
2.5
0.9
0.7
2.54
0.5
5.08
1.3
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
February 2000
6
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212X series D, E and F
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 2000
7
Rev 1.000
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