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BTA216B-F [NXP]

Three quadrant triacs guaranteed commutation;
BTA216B-F
型号： BTA216B-F
厂家： NXP    NXP
描述：

Three quadrant triacs guaranteed commutation
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Philips Semiconductors  
Product specification  
Three quadrant triacs  
guaranteed commutation  
BTA216B series D, E and F  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated guaranteed commutation  
triacs in a plastic envelope suitable for  
surface mounting, intended for use in  
motor control circuits or with other highly  
inductive loads. These devices balance  
the requirements of commutation  
performance and gate sensitivity. The  
"sensitive gate" E series and "logic level"  
D series are intended for interfacing with  
low power drivers, including micro  
controllers.  
SYMBOL  
PARAMETER  
MAX. MAX. UNIT  
BTA216B-  
BTA216B-  
BTA216B-  
600D  
-
600E 800E  
VDRM  
600F  
600  
800F  
800  
V
Repetitive peak off-state  
voltages  
RMS on-state current  
Non-repetitive peak on-state  
current  
IT(RMS)  
ITSM  
A
A
16  
140  
16  
140  
PINNING - SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
mb  
T2  
T1  
2
main terminal 2  
gate  
3
2
mb main terminal 2  
1
3
G
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-600  
6001  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
16  
A
Tmb ≤ 99 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to  
surge  
-
-
t = 20 ms  
140  
150  
98  
A
A
t = 16.7 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
t = 10 ms  
-
A2s  
A/µs  
dIT/dt  
ITM = 20 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
100  
IGM  
-
-
-
-
2
5
5
A
V
W
W
VGM  
PGM  
PG(AV)  
over any 20 ms  
period  
0.5  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
125  
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
February 2000  
1
Rev 1.000  
Philips Semiconductors  
Product specification  
Three quadrant triacs  
guaranteed commutation  
BTA216B series D, E and F  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Thermal resistance  
full cycle  
-
-
-
-
-
55  
1.2  
1.7  
-
K/W  
K/W  
K/W  
junction to mounting base half cycle  
Rth j-a  
Thermal resistance  
junction to ambient  
minimum footprint, FR4 board  
STATIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP.  
...D  
MAX.  
...E  
UNIT  
BTA216-  
...D  
...F  
IGT  
Gate trigger current2  
Latching current  
Holding current  
VD = 12 V; IT = 0.1 A  
T2+ G+  
-
-
-
1.3  
2.6  
3.4  
5
5
5
10  
10  
10  
25  
25  
25  
mA  
mA  
mA  
T2+ G-  
T2- G-  
IL  
VD = 12 V; IGT = 0.1 A  
T2+ G+  
T2+ G-  
T2- G-  
mA  
mA  
mA  
-
-
-
10.2  
11.3  
19.3  
15  
25  
25  
25  
30  
30  
30  
40  
40  
IH  
VD = 12 V; IGT = 0.1 A  
-
8
15  
25  
30  
mA  
...D, E, F  
VT  
On-state voltage  
IT = 20 A  
-
-
1.2  
0.7  
0.4  
1.5  
1.5  
-
V
V
V
VGT  
Gate trigger voltage  
VD = 12 V; IT = 0.1 A  
VD = 400 V; IT = 0.1 A;  
Tj = 125 ˚C  
0.25  
ID  
Off-state leakage current VD = VDRM(max)  
;
-
0.1  
0.5  
mA  
Tj = 125 ˚C  
DYNAMIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
...E  
60  
TYP. MAX. UNIT  
...D  
BTA216-  
VDM = 67% VDRM(max)  
Tj = 110 ˚C; exponential  
waveform; gate open  
circuit  
...D  
...F  
dVD/dt  
dIcom/dt  
dIcom/dt  
Critical rate of rise of  
off-state voltage  
;
30  
70  
65  
7.5  
100  
-
-
-
V/µs  
Critical rate of change of  
commutating current  
VDM = 400 V; Tj = 110 ˚C; 2.5  
IT(RMS) = 16 A;  
4.7  
40  
9.5  
50  
A/ms  
dVcom/dt = 20V/µs; gate  
open circuit  
Critical rate of change of  
commutating current  
VDM = 400 V; Tj = 110 ˚C;  
IT(RMS) = 16 A;  
12  
A/ms  
dVcom/dt = 0.1V/µs; gate  
open circuit  
...D, E, F  
tgt  
Gate controlled turn-on  
time  
ITM = 20 A; VD = VDRM(max)  
;
-
-
-
2
-
µs  
IG = 0.1 A; dIG/dt = 5 A/µs  
2 Device does not trigger in the T2-, G+ quadrant.  
February 2000  
2
Rev 1.000  
Philips Semiconductors  
Product specification  
Three quadrant triacs  
guaranteed commutation  
BTA216B series D, E and F  
Tmb(max) / C  
= 180  
IT(RMS) / A  
Ptot / W  
25  
95  
20  
15  
10  
5
99 C  
101  
107  
20  
1
120  
90  
15  
10  
5
60  
30  
113  
119  
125  
0
0
-50  
0
50  
Tmb / C  
100  
150  
0
5
10  
15  
20  
IT(RMS) / A  
Fig.1. Maximum on-state dissipation, Ptot, versus rms  
on-state current, IT(RMS), where α = conduction angle.  
Fig.4. Maximum permissible rms current IT(RMS)  
versus mounting base temperature Tmb.  
,
ITSM / A  
1000  
IT(RMS) / A  
50  
40  
30  
20  
10  
0
dIT/dt limit  
100  
I
TSM  
time  
I
T
T
Tj initial = 25 C max  
10ms 100ms  
10  
10us  
100us  
1ms  
T / s  
0.01  
0.1  
surge duration / s  
1
10  
Fig.2. Maximum permissible non-repetitive peak  
on-state current ITSM, versus pulse width tp, for  
sinusoidal currents, tp ≤ 20ms.  
Fig.5. Maximum permissible repetitive rms on-state  
current IT(RMS), versus surge duration, for sinusoidal  
currents, f = 50 Hz; Tmb ≤ 99˚C.  
ITSM / A  
150  
VGT(Tj)  
VGT(25 C)  
1.6  
I
TSM  
time  
I
T
1.4  
1.2  
1
T
100  
50  
0
Tj initial = 25 C max  
0.8  
0.6  
0.4  
1
10  
100  
1000  
-50  
0
50  
Tj / C  
100  
150  
Number of cycles at 50Hz  
Fig.3. Maximum permissible non-repetitive peak  
on-state current ITSM, versus number of cycles, for  
sinusoidal currents, f = 50 Hz.  
Fig.6. Normalised gate trigger voltage  
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.  
February 2000  
3
Rev 1.000  
Philips Semiconductors  
Product specification  
Three quadrant triacs  
guaranteed commutation  
BTA216B series D, E and F  
IT / A  
IGT(Tj)  
IGT(25°C)  
50  
40  
30  
20  
10  
0
Tj = 125 C  
Tj = 25 C  
3
2.5  
2
T2+ G+  
T2+ G-  
T2- G-  
typ  
max  
Vo = 1.195 V  
Rs = 0.018 Ohms  
1.5  
1
0.5  
0
0
0.5  
1
1.5  
VT / V  
2
2.5  
3
-50  
0
50  
Tj/°C  
100  
150  
Fig.7. Normalised gate trigger current  
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.  
Fig.10. Typical and maximum on-state characteristic.  
IL(Tj)  
IL(25 C)  
Zth j-mb (K/W)  
10  
3
2.5  
2
1
0.1  
unidirectional  
bidirectional  
1.5  
1
t
P
p
D
0.01  
t
0.5  
0
0.001  
10us  
0.1ms  
1ms  
10ms  
tp / s  
0.1s  
1s  
10s  
-50  
0
50  
Tj / C  
100  
150  
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),  
Fig.11. Transient thermal impedance Zth j-mb, versus  
pulse width tp.  
versus junction temperature Tj.  
dIcom/dt (A/ms)  
IH(Tj)  
IH(25C)  
100  
F TYPE  
3
E TYPE  
D TYPE  
2.5  
2
10  
1.5  
1
0.5  
0
1
20  
40  
60  
80  
Tj/˚C  
100  
120  
140  
-50  
0
50  
Tj / C  
100  
150  
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),  
Fig.12. Mimimum, critical rate of change of  
commutating current dIcom/dt versus junction  
temperature, dVcom/dt = 20V/µs.  
versus junction temperature Tj.  
February 2000  
4
Rev 1.000  
Philips Semiconductors  
Product specification  
Three quadrant triacs  
guaranteed commutation  
BTA216B series D, E and F  
MECHANICAL DATA  
Dimensions in mm  
Net Mass: 1.4 g  
4.5 max  
1.4 max  
10.3 max  
11 max  
15.4  
2.5  
0.85 max  
(x2)  
0.5  
2.54 (x2)  
Fig.13. SOT404 : centre pin connected to mounting base.  
MOUNTING INSTRUCTIONS  
Dimensions in mm  
11.5  
9.0  
17.5  
2.0  
3.8  
5.08  
Fig.14. SOT404 : minimum pad sizes for surface mounting.  
Notes  
1. Plastic meets UL94 V0 at 1/8".  
February 2000  
5
Rev 1.000  
Philips Semiconductors  
Product specification  
Three quadrant triacs  
guaranteed commutation  
BTA216B series D, E and F  
DEFINITIONS  
Data sheet status  
Objective specification  
This data sheet contains target or goal specifications for product development.  
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.  
Product specification  
This data sheet contains final product specifications.  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 2000  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
February 2000  
6
Rev 1.000  

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