BTA312B-800C_10 [NXP]

3Q Hi-Com Triac; 3Q的Hi- COM可控硅
BTA312B-800C_10
型号: BTA312B-800C_10
厂家: NXP    NXP
描述:

3Q Hi-Com Triac
3Q的Hi- COM可控硅

可控硅
文件: 总14页 (文件大小:265K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BTA312B-800C  
3Q Hi-Com Triac  
Rev. 02 — 30 November 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Planar passivated high commutation three quadrant triac in a SOT404 plastic package  
intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.  
This "series C" triac will commutate the full RMS current at the maximum rated junction  
temperature without the aid of a snubber.  
1.2 Features and benefits  
3Q technology for improved noise  
High voltage capability  
immunity  
Planar passivated for voltage  
High commutation capability with  
ruggedness and reliability  
maximum false trigger immunity  
Surface mountable package  
High immunity to false turn-on by dV/dt  
Triggering in three quadrants only  
1.3 Applications  
Electronic thermostats (heating and  
Rectifier-fed DC inductive loads e.g.  
cooling)  
DC motors and solenoids  
High power motor controls e.g.  
washing machines and vacuum  
cleaners  
1.4 Quick reference data  
Table 1.  
Symbol  
VDRM  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
repetitive peak  
off-state voltage  
-
-
800  
V
ITSM  
non-repetitive  
peak on-state  
current  
full sine wave; Tj(init) = 25 °C;  
tp = 20 ms; see Figure 4;  
see Figure 5  
-
-
95  
A
IT(RMS)  
RMS on-state  
current  
full sine wave; Tmb 101 °C;  
see Figure 3; see Figure 1;  
see Figure 2  
-
-
12  
A
BTA312B-800C  
NXP Semiconductors  
3Q Hi-Com Triac  
Table 1.  
Symbol  
Static characteristics  
Quick reference data …continued  
Parameter  
Conditions  
Min Typ Max Unit  
IGT  
gate trigger  
current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; see Figure 7  
2
2
2
-
-
-
35  
35  
35  
mA  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; see Figure 7  
VD = 12 V; IT = 0.1 A; T2- G-;  
Tj = 25 °C; see Figure 7  
2. Pinning information  
Table 2.  
Pinning information  
Symbol Description  
Pin  
1
Simplified outline  
Graphic symbol  
T1  
T2  
G
main terminal 1  
main terminal 2  
gate  
mb  
T2  
T1  
G
2
3
sym051  
mb  
T2  
mounting base; main terminal 2  
2
1
3
SOT404 (D2PAK)  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
BTA312B-800C  
D2PAK  
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404  
(one lead cropped)  
BTA312B-800C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 30 November 2010  
2 of 14  
BTA312B-800C  
NXP Semiconductors  
3Q Hi-Com Triac  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDRM  
Parameter  
Conditions  
Min  
Max  
800  
12  
Unit  
V
repetitive peak off-state voltage  
RMS on-state current  
-
-
IT(RMS)  
full sine wave; Tmb 101 °C;  
A
see Figure 3; see Figure 1; see Figure 2  
ITSM  
non-repetitive peak on-state  
current  
full sine wave; Tj(init) = 25 °C;  
tp = 20 ms; see Figure 4; see Figure 5  
-
-
95  
A
A
full sine wave; Tj(init) = 25 °C;  
tp = 16.7 ms  
105  
I2t  
I2t for fusing  
tp = 10 ms; sine-wave pulse  
-
45  
100  
2
A2s  
A/µs  
A
dIT/dt  
IGM  
rate of rise of on-state current  
peak gate current  
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs  
-
-
PGM  
PG(AV)  
Tstg  
Tj  
peak gate power  
-
5
W
average gate power  
storage temperature  
junction temperature  
over any 20 ms period  
-
0.5  
150  
125  
W
-40  
-
°C  
°C  
003aab687  
003aab686  
50  
15  
IT(RMS)  
(A)  
IT(RMS)  
(A)  
40  
10  
30  
20  
10  
0
5
0
10-2  
10-1  
1
10  
-50  
0
50  
100  
150  
mb (°C)  
surge duration (s)  
T
Fig 1. RMS on-state current as a function of surge  
duration; maximum values  
Fig 2. RMS on-state current as a function of mounting  
base temperature; maximum values  
BTA312B-800C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 30 November 2010  
3 of 14  
BTA312B-800C  
NXP Semiconductors  
3Q Hi-Com Triac  
003aab690  
16  
conduction form  
α = 180°  
angle  
(degrees)  
factor  
a
Ptot  
(W)  
120°  
90°  
30  
60  
90  
120  
180  
4
12  
2.8  
2.2  
1.9  
1.57  
α
60°  
30°  
8
4
0
0
3
6
9
12  
IT(RMS) (A)  
Fig 3. Total power dissipation as a function of RMS on-state current; maximum values  
003aab680  
100  
ITSM  
(A)  
80  
60  
40  
I
I
TSM  
T
t
20  
0
1/f  
= 25 °C max  
T
j(init)  
1
10  
102  
103  
number of cycles (n)  
Fig 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum  
values  
BTA312B-800C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 30 November 2010  
4 of 14  
BTA312B-800C  
NXP Semiconductors  
3Q Hi-Com Triac  
003aab691  
103  
ITSM  
(A)  
(1)  
102  
I
I
TSM  
t
T
t
p
T
= 25 °C max  
j(init)  
10  
10-5  
10-4  
10-3  
10-2  
10-1  
tp (s)  
Fig 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values  
BTA312B-800C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 30 November 2010  
5 of 14  
BTA312B-800C  
NXP Semiconductors  
3Q Hi-Com Triac  
5. Thermal characteristics  
Table 5.  
Symbol  
Rth(j-mb)  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
1.5  
2
Unit  
K/W  
K/W  
thermal resistance  
from junction to  
mounting base  
full cycle; see Figure 6  
half cycle; see Figure 6  
-
-
-
-
Rth(j-a)  
thermal resistance  
from junction to  
ambient  
printed circuit board mounted; minimum  
footprint  
-
55  
-
K/W  
003aab775  
10  
Z
th(j-mb)  
(K/W)  
1
(1)  
(2)  
1  
2  
3  
10  
10  
10  
P
t
t
p
5  
4  
3  
2  
1  
10  
10  
10  
10  
10  
1
10  
t
(s)  
p
(1) Unidirectional (half cycle)  
(2) Bidirectional (full cycle)  
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse duration  
BTA312B-800C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 30 November 2010  
6 of 14  
BTA312B-800C  
NXP Semiconductors  
3Q Hi-Com Triac  
6. Characteristics  
Table 6.  
Symbol  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; see Figure 7  
2
2
2
-
-
-
-
-
-
-
35  
35  
35  
50  
60  
50  
mA  
mA  
mA  
mA  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; see Figure 7  
VD = 12 V; IT = 0.1 A; T2- G-;  
Tj = 25 °C; see Figure 7  
IL  
latching current  
VD = 12 V; IG = 0.1 A; T2+ G+;  
Tj = 25 °C; see Figure 8  
VD = 12 V; IG = 0.1 A; T2+ G-;  
Tj = 25 °C; see Figure 8  
-
VD = 12 V; IG = 0.1 A; T2- G-;  
Tj = 25 °C; see Figure 8  
-
IH  
holding current  
VD = 12 V; Tj = 25 °C; see Figure 9  
IT = 15 A; Tj = 25 °C; see Figure 10  
-
-
-
-
35  
mA  
V
VT  
VGT  
on-state voltage  
gate trigger voltage  
1.3  
0.8  
1.6  
1.5  
VD = 12 V; IT = 0.1 A; Tj = 25 °C;  
see Figure 11  
V
VD = 400 V; IT = 0.1 A; Tj = 125 °C;  
see Figure 11  
0.25  
-
0.4  
0.1  
-
V
ID  
off-state current  
VD = 800 V; Tj = 125 °C  
0.5  
mA  
Dynamic characteristics  
dVD/dt  
rate of rise of off-state VDM = 536 V; Tj = 125 °C; exponential  
500  
20  
-
-
-
-
V/µs  
voltage  
waveform; gate open circuit  
dIcom/dt  
rate of change of  
commutating current  
VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A;  
dVcom/dt = 20 V/µs; gate open circuit;  
"without snubber" condition  
A/ms  
tgt  
gate-controlled turn-on ITM = 20 A; VD = 800 V; IG = 0.1 A;  
-
2
-
µs  
time  
dIG/dt = 5 A/µs  
BTA312B-800C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 30 November 2010  
7 of 14  
BTA312B-800C  
NXP Semiconductors  
3Q Hi-Com Triac  
001aac669  
001aab100  
3
3
(1)  
I
I
GT  
L
I
I
GT(25°C)  
L(25°C)  
2
2
(2)  
(3)  
1
1
0
50  
0
50  
0
50  
100  
150  
0
50  
100  
150  
T (°C)  
j
T (°C)  
j
(1) T2- G-  
(2) T2+ G-  
(3) T2+ G+  
Fig 7. Normalized gate trigger current as a function of  
junction temperature  
Fig 8. Normalized latching current as a function of  
junction temperature  
001aab099  
003aab678  
3
40  
IT  
I
H
(A)  
I
H(25°C)  
30  
20  
2
1
0
(1)  
(2)  
(3)  
10  
0
50  
0
50  
100  
150  
0
0.5  
1
1.5  
2
2.5  
T (°C)  
j
V
T (V)  
Vo = 1.127 V; Rs = 0.027 Ω  
(1) Tj = 125 °C; typical values  
(2) Tj = 125 °C; maximum values  
(3) Tj = 25 °C; maximum values  
Fig 9. Normalized holding current as a function of  
junction temperature  
Fig 10. On-state current as a function of on-state  
voltage  
BTA312B-800C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 30 November 2010  
8 of 14  
BTA312B-800C  
NXP Semiconductors  
3Q Hi-Com Triac  
001aab101  
1.6  
V
GT  
V
GT(25°C)  
1.2  
0.8  
0.4  
50  
0
50  
100  
150  
T (°C)  
j
Fig 11. Normalized gate trigger voltage as a function of junction temperature  
BTA312B-800C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 30 November 2010  
9 of 14  
BTA312B-800C  
NXP Semiconductors  
3Q Hi-Com Triac  
7. Package outline  
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)  
SOT404  
A
A
E
1
mounting  
base  
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
D
E
A
A
b
UNIT  
c
D
e
L
H
Q
1
1
p
D
max.  
4.50  
4.10  
1.40  
1.27  
0.85  
0.60  
0.64  
0.46  
1.60  
1.20  
10.30  
9.70  
2.90 15.80 2.60  
2.10 14.80 2.20  
mm  
11  
2.54  
REFERENCES  
JEDEC JEITA  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
05-02-11  
06-03-16  
SOT404  
Fig 12. Package outline SOT404 (D2PAK)  
BTA312B-800C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 30 November 2010  
10 of 14  
BTA312B-800C  
NXP Semiconductors  
3Q Hi-Com Triac  
8. Revision history  
Table 7.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
BTA312B-800C v.2  
Modifications:  
20101130  
Product data sheet  
-
BTA312B_SER_B_C v.1  
Type number BTA312B-800C separated from data sheet BTA312B_SER_B_C v.1.  
Various changes to content.  
BTA312B_SER_B_C v.1 20070412  
Product data sheet  
-
-
BTA312B-800C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 30 November 2010  
11 of 14  
BTA312B-800C  
NXP Semiconductors  
3Q Hi-Com Triac  
9. Legal information  
9.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Definition  
Objective [short] data sheet  
Development  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term 'short data sheet' is explained in section "Definitions".  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product  
status information is available on the Internet at URL http://www.nxp.com.  
Suitability for use — NXP Semiconductors products are not designed,  
9.2 Definitions  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
9.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
BTA312B-800C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 30 November 2010  
12 of 14  
BTA312B-800C  
NXP Semiconductors  
3Q Hi-Com Triac  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Export control — This document as well as the item(s) described herein may  
be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
9.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,  
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,  
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,  
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,  
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.  
non-automotive qualified products in automotive equipment or applications.  
HD Radio and HD Radio logo — are trademarks of iBiquity Digital  
Corporation.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
10. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BTA312B-800C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 02 — 30 November 2010  
13 of 14  
BTA312B-800C  
NXP Semiconductors  
3Q Hi-Com Triac  
11. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . .1  
Features and benefits. . . . . . . . . . . . . . . . . . . . .1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
Quick reference data . . . . . . . . . . . . . . . . . . . . .1  
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2  
Ordering information. . . . . . . . . . . . . . . . . . . . . .2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3  
Thermal characteristics . . . . . . . . . . . . . . . . . . .6  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .7  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11  
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13  
9.1  
9.2  
9.3  
9.4  
10  
Contact information. . . . . . . . . . . . . . . . . . . . . .13  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2010.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 30 November 2010  
Document identifier: BTA312B-800C  

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