BU1506 [NXP]
Silicon Diffused Power Transistor; 硅扩散型功率晶体管
| 型号： | BU1506 |
| 厂家： | 
NXP |
| 描述： | Silicon Diffused Power Transistor |
| 文件： | 总7页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1506DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
700
5
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
-
A
ICM
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
8
A
Ptot
VCEsat
ICsat
VF
Ths ≤ 25 ˚C
-
32
5.0
-
2.0
0.5
W
V
IC = 3.0 A; IB = 0.79 A
-
3.0
1.6
0.25
A
IF = 3.0 A
ICM = 3.0 A; IB(end) = 0.67 A
V
tf
Fall time
µs
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
c
case
base
2
collector
emitter
b
3
Rbe
case isolated
1
2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
700
5
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
Collector current peak value
Base current (DC)
-
8
A
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
-
3
8
100
8
32
150
150
A
Base current peak value
Reverse base current
-
A
average over any 20 ms period
-
mA
A
Reverse base current peak value 1
Total power dissipation
Storage temperature
-
-
Ths ≤ 25 ˚C
W
˚C
˚C
-40
-
Junction temperature
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-hs
Rth j-a
Junction to heatsink
Junction to ambient
with heatsink compound
in free air
-
4.0
-
K/W
K/W
55
1 Turn-off current.
September 1997
1
Rev 1.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1506DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Cisol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
heatsink
waveform;
R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
ICES
Collector cut-off current 2
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
-
-
-
-
1.0
2.0
mA
mA
;
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
VEB = 7.5 V; IC = 0 A
IB = 600 mA
90
7.5
700
-
13.5
-
180
-
-
mA
V
V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA;
L = 25 mH
Rbe
Base-emitter resistance
VEB = 7.5 V
-
55
-
-
12
5.5
1.6
-
Ω
V
V
VCEsat
VBEsat
hFE
Collector-emitter saturation voltage IC = 3.0 A; IB = 0.79 A
-
5.0
1.1
-
Base-emitter saturation voltage
DC current gain
IC = 3.0 A; IB = 0.79 A
IC = 0.3 A; VCE = 5 V
IC = 3.0 A; VCE = 5 V
IF = 3.0 A
-
-
hFE
VF
3.8
-
7.5
2.0
Diode forward voltage
V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
ICM = 3.0 A; LC = 1.35 mH;
47
-
pF
Switching times (line deflection
circuit)
C
FB = 9.4 nF; IB(end) = 0.67 A;
LB = 8 µH; -VBB = 4 V;
(-dIB/dt = 0.45 A/µs)
ts
tf
Turn-off storage time
Turn-off fall time
4.5
0.25
6.0
0.5
µs
µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1506DX
hFE
ICsat
TRANSISTOR
100
10
1
IC
IB
DIODE
Tj = 25 C
t
t
Tj = 125 C
5V
IBend
20us
26us
64us
1V
VCE
0.01
0.1
1
10
IC / A
t
Fig.1. Switching times waveforms.
Fig.4. Typical DC current gain. hFE = f (IC)
parameter VCE
VBESAT / V
ICsat
90 %
1.2
Tj = 25 C
Tj = 125 C
1.1
1
IC
0.9
0.8
0.7
0.6
0.5
0.4
10 %
tf
IC/IB =
t
ts
3
4
5
IB
IBend
t
0.1
1
10
- IBM
IC / A
Fig.2. Switching times definitions.
Fig.5. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
VCESAT / V
1
+ 150 v nominal
adjust for ICsat
IC/IB =
0.9
5
4
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
3
Lc
Tj = 25 C
Tj = 125 C
D.U.T.
LB
IBend
-VBB
Cfb
Rbe
0.1
1
10
IC / A
Fig.3. Switching times test circuit.
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
September 1997
3
Rev 1.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1506DX
VBESAT / V
1.2
ts, tf / us
10
9
8
7
6
5
4
3
2
1
0
Tj = 25 C
Tj = 125 C
ts
1.1
1
0.9
0.8
0.7
0.6
IC =
4A
3A
2.5A
IC =
3A
2.5A
tf
0.1
1
10
0
1
2
3
4
IB / A
IB / A
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
Fig.10. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C
Normalised Power Derating
VCESAT / V
10
PD%
120
with heatsink compound
110
100
90
80
70
60
50
40
30
20
10
0
Tj = 25 C
Tj = 125 C
IC = 2.5A
3A
4A
1
0
20
40
60
80
Ths /
100
120
140
0.1
0.1
1
10
C
IB / A
Fig.8. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter IC
Fig.11. Normalised power dissipation.
PD% = 100 PD/PD 25˚C = f (Ths)
Eoff / uJ
1000
IC = 3A
2.5A
100
10
0.1
1
10
IB / A
Fig.9. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC
September 1997
4
Rev 1.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1506DX
IC / A
100
IC / A
100
= 0.01
= 0.01
ICM max
tp =
ICM max
tp =
10
10
IC max
10 us
10 us
IC max
II
II
1
1
Ptot max
Ptot max
100 us
1 ms
100 us
1 ms
I
I
0.1
0.1
10 ms
DC
10 ms
DC
0.01
0.01
1
10
100
1000
1
10
100
1000
VCE / V
VCE / V
Fig.12. Forward bias safe operating area. Ths = 25˚C
Fig.13. Forward bias safe operating area. Ths = 25˚C
I
Region of permissible DC operation.
I
Region of permissible DC operation.
II Extension for repetitive pulse operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
NB: Mounted without heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
September 1997
5
Rev 1.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1506DX
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
2.5
6.4
0.8 max. depth
15.8
max
seating
plane
15.8
max.
19
max.
3 max.
not tinned
3
2.5
13.5
min.
1
2
3
M
0.4
1.0 (2x)
0.6
2.5
0.9
0.7
2.54
0.5
5.08
1.3
Fig.14. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
6
Rev 1.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1506DX
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
7
Rev 1.300
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